779-2167
Abstract: No abstract text available
Text: Mass Termination IDC Systems Application Tooling Cross Reference 779-2100 HAND TOOL PART NUMBER DESCRIPTION 311-xxx302 622-xxx0 PLATEN PUSH BLOCK 779-3200 BENCH PRESS 779-3500XT BENCH PRESS PLATEN (NEST) PLATEN (PUSH BLOCK) BASE PLATE (NEST) PLATEN (PUSH BLOCK)
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311-xxx302
622-xxx0
779-3500XT
622-xxx1
636-xxx0
636-xxx1
P3184
622-xxMM1
622-xxMM2
622-xxMM3
779-2167
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FSU01LG
Abstract: No abstract text available
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
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FSU01LG
Abstract: No abstract text available
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
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452 fet
Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=12GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
12GHz
FSU01LG
FCSI0598M200
452 fet
fujitsu GHz gaas fet
fujitsu gaas fet
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fujitsu GHz gaas fet
Abstract: fujitsu gaas fet FSU01LG
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
FCSI0598M200
fujitsu GHz gaas fet
fujitsu gaas fet
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FLL300IP-4
Abstract: No abstract text available
Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high
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FLL300IP-4
FLL300IP-4
FCSI0797M200
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FSU01LG
Abstract: No abstract text available
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
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fll300ip
Abstract: No abstract text available
Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high
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FLL300IP-4
FLL300IP-4
fll300ip
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FLL300IP-4
Abstract: FLL30
Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high
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FLL300IP-4
FLL300IP-4
FCSI0797M200
FLL30
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Untitled
Abstract: No abstract text available
Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high
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FLL300IP-4
FLL300IP-4
FCSI0797M200
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FLL300IP-4
Abstract: 15 GHz power amplifier Output Power 37dBm Fujitsu GaAs FET Amplifier fujitsu gaas fet L-band
Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high
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FLL300IP-4
FLL300IP-4
FCSI0797M200
15 GHz power amplifier Output Power 37dBm
Fujitsu GaAs FET Amplifier
fujitsu gaas fet L-band
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FSU01LG
Abstract: Eudyna Devices
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
Eudyna Devices
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Untitled
Abstract: No abstract text available
Text: Information DC axial fans Accessories DC centrifugal fans 238 246 248 251 254 AC centrifugal fans AC axial fans ACmaxx / GreenTech EC-Compact fans DC fans - specials Guard grilles Fan filter guard grilles Inlet nozzles Connection cables / Accessories Electrical connections
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SCL 1058
Abstract: M383L3313BT1 PC200 DM 1265
Text: M383L3313BT1 184pin Registered DDR SDRAM MODULE 256MB DDR SDRAM MODULE 32Mx72(16Mx72*2 bank based on 16Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.8 Nov. 2000 Rev. 0.8 Nov. 2000 184pin Registered DDR SDRAM MODULE M383L3313BT1 Revision History
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M383L3313BT1
184pin
256MB
32Mx72
16Mx72
16Mx8
72-bit
SCL 1058
M383L3313BT1
PC200
DM 1265
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Climate Control
Abstract: No abstract text available
Text: www.hammondmfg.com Climate Control Cooling Products General Information .347 Sizing an Air Conditioner .348 Side Mounting DTS Series 1200 BTU/H NEMA 12 .349
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1481L44
1481L66
1481L88
Climate Control
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Untitled
Abstract: No abstract text available
Text: Tantalum Surface Mount Capacitors Low ESR Tantalum surface mount Tantalum Th c surface mount Aluminum Elec Capacitors Sn Aluminum surface mount One world. One KEMET. Tantalum Surface Mount Capacitors Low ESR Table of Contents_ Page
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TC102-1
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mt 1389 de
Abstract: samwha ferrite EE-4242 EER3530 EER2834 PQ3225 samwha ferrite tile samwha .FERRITE TILE eer3435 str 52100
Text: www.samwha.com/electronics SAMWHA ELECTRONICS SEOUL HQ SAMWHA USA Inc. SAN DIEGO HQ SAMWHA HUNGARY KFT. HUNGARY Samyoung Bldg 587-8, Sinsa-Dong, Gangnam-Gu, Seoul, 135-892, Korea Tel. +82-2-546-0999 Fax. +82-2-546-7354 2555 Melksee Street, San Diego, California, 92154, USA
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sm e040
Abstract: T495X107 2002 476 16V 107 6K 241 tantalum capacitors T2015 T540 COTS Polymer Electrolytic for High Reliability Applications, 2.5 – 63 VDC
Text: Tantalum Surface Mount Capacitors Low ESR tantalum low esr One world. One KEMET. Tantalum & Aluminum Surface Mount Capacitors Low ESR Table of Contents Page Why Choose KEMET. 3
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15bis
sm e040
T495X107 2002
476 16V
107 6K 241 tantalum capacitors
T2015
T540 COTS Polymer Electrolytic for High Reliability Applications, 2.5 – 63 VDC
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MS24693
Abstract: MS24693-C3 NAS1635 ssy 1920 ssy 1920 8 pin MS51957-15 MS35649-244 7136-1 MS35338 NAS662C2R4
Text: IM-289A IM-289A Model 8310 TO A2-33AA36-533-1 Operation & Service Manual Model 8310 Programmable Attenuator Units This documentation may not be reproduced in any form, for any purpose unless authorized in writing by Aeroflex / Weinschel, Inc. Aeroflex / Weinschel, Inc.
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IM-289A
A2-33AA36-533-1
8310-204-F
89/336/EEC
93/68/EEC,
73/23/EEC
EN50081-1:
EN50082-1:
EN61010-1:
MS24693
MS24693-C3
NAS1635
ssy 1920
ssy 1920 8 pin
MS51957-15
MS35649-244
7136-1
MS35338
NAS662C2R4
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6333a
Abstract: E105105 M009 225 6K smd tantalum capacitors ko 157 6K E2K5 T540 COTS Polymer Electrolytic for High Reliability Applications, 2.5 – 63 VDC T543
Text: Tantalum Surface Mount Capacitors Low ESR tantalum low esr One world. One KEMET. Tantalum & Aluminum Surface Mount Capacitors Low ESR Table of Contents Page Why Choose KEMET. 3
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15bis
6333a
E105105
M009
225 6K smd tantalum capacitors
ko 157 6K
E2K5
T540 COTS Polymer Electrolytic for High Reliability Applications, 2.5 – 63 VDC
T543
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fujitsu gaas fet
Abstract: FSU01LG
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P ^ b = 20.0dBm Typ. • High Associated Gain: G ^ b = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@ f=12G Hz • Low Bias Conditions: V d s =3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
190dB
12GHz
FSU01LG
FCSI0598M200
fujitsu gaas fet
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Untitled
Abstract: No abstract text available
Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high
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FLL300IP-4
FLL300IP-4
FCSI0797M200
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2SC4672 equivalent
Abstract: 2SC2412KX2 2SC1514K equivalent 2sa1455k SO68 2SB1181F5 equivalent csc 354 2SB1386 equivalent FMC3A FMW5
Text: h /T ra n sisto rs /\°'y JT — v ^ J ^ fp p — f l ü / L i s t of Products for Each Package • EM3 Extreme M ini-m old 3pir Part No. Application V c e o (V) IC(A) iC Max.(A) PC(W) fj(M H z) Cob(pF) Page h FE lc(mA) V c e (V) 2SC4617 Pre Amp 50 0 15
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2SC4617
2SC4618
2SC4619
2SC4649
2SA1576A
2SA1577
2SA1579
2SA1808
2SC4081
2SC4082
2SC4672 equivalent
2SC2412KX2
2SC1514K
equivalent 2sa1455k
SO68
2SB1181F5 equivalent
csc 354
2SB1386 equivalent
FMC3A
FMW5
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EZ 707
Abstract: 2SC3544 EZ 0710 EZ 728
Text: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry
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NE944
EZ 707
2SC3544
EZ 0710
EZ 728
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