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    777K Price and Stock

    Power Integrations LNK6777K-TL

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    DigiKey LNK6777K-TL Digi-Reel 8,900 1
    • 1 $1.31
    • 10 $1.31
    • 100 $1.081
    • 1000 $1.081
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    LNK6777K-TL Cut Tape 8,900 1
    • 1 $1.31
    • 10 $1.31
    • 100 $1.081
    • 1000 $1.081
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    LNK6777K-TL Reel 6,000 1,000
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    • 1000 $0.92
    • 10000 $0.825
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    Avnet Americas LNK6777K-TL Reel 8 Weeks 1,000
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    • 1000 $1.188
    • 10000 $0.924
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    Mouser Electronics LNK6777K-TL 1,305
    • 1 $1.31
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    • 1000 $0.88
    • 10000 $0.825
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    Newark LNK6777K-TL Cut Tape 1,675 1
    • 1 $1.53
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    Avnet Asia LNK6777K-TL 8 Weeks 1,000
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    EBV Elektronik LNK6777K-TL 1,000 10 Weeks 1,000
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    New Advantage Corporation LNK6777K-TL 1,000 1
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    Pomona Electronics 4777-K-24

    TEST LEAD BNC TO GRAB HOOK 24"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 4777-K-24 Bulk 18 1
    • 1 $40.99
    • 10 $40.99
    • 100 $39.9376
    • 1000 $39.9376
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    Mouser Electronics 4777-K-24 1
    • 1 $39.94
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    Newark 4777-K-24 Bulk 2
    • 1 $46.99
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    RS 4777-K-24 Bulk 1 Weeks 2
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    TME 4777-K-24 1
    • 1 $52.49
    • 10 $49.21
    • 100 $49.21
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    TestEquity LLC 4777-K-24
    • 1 $46.99
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    • 100 $46.99
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    Pomona Electronics 4777-K-36

    TEST LEAD BNC TO GRAB HOOK 36"
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    DigiKey 4777-K-36 Bulk 10 1
    • 1 $40.99
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    • 100 $39.9376
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    Mouser Electronics 4777-K-36 12
    • 1 $39.94
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    Newark 4777-K-36 Bulk 2
    • 1 $46.99
    • 10 $45.11
    • 100 $40.89
    • 1000 $36.66
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    RS 4777-K-36 Bulk 1 Weeks 1
    • 1 $46.99
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    TME 4777-K-36 1
    • 1 $52.49
    • 10 $49.21
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    Master Electronics 4777-K-36 3
    • 1 $41.72
    • 10 $39.16
    • 100 $37.99
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    TestEquity LLC 4777-K-36
    • 1 $46.99
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    • 100 $46.99
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    Littelfuse Inc 777-KW-HP-P2

    3-PHASE POWER MONITOR/200-480V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 777-KW-HP-P2 Bulk 1 1
    • 1 $806.17
    • 10 $620.84
    • 100 $620.84
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    Power Integrations LNK6777K

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    DigiKey LNK6777K Tube
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    Find more 777K price and stock on Findchips.com

    777K Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    777-KW/HP-P2 Littelfuse Industrial Controls - Monitor - Current/Voltage - Relay Output - 3-PHASE POWER MONITOR/200-480V Original PDF

    777K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    toyocom TCO

    Abstract: TTL LOGIC TCO-777KH
    Text: TOYOCOM TCO-777KH 1/2 TCOTCO-777KH Photo Specification | Outline drawing Specification Parameter Symbol min. Typ. Frequency range Fo 36 Frequency stability dF/Fo -100 Operating Topr 25 temperature Operating voltage Vcc 4.5 5.0 Operating current Icc - - Input voltage


    Original     		PDF TCO-777KH TCOTCO-777KH -16mA toyocom TCO TTL LOGIC TCO-777KH

    Toyocom

    Abstract: TCO TOYOCOM 50mhz crystal oscillator toyocom TCO TCO-777KH
    Text: TOYOCOM | USA Crystal Clock Oscillator Part Number: TCO-777KH Applications: Computers & Peripherals Consumer Application Instrumentation LAN-WAN Telecom wired Package: SMO-J Package Dimensions: 13.89x8.56x4.7mm Product Specifications Frequency Range: 30~75 MHz


    Original     		PDF TCO-777KH 100ppm 50MHz) 75MHz) Toyocom TCO TOYOCOM 50mhz crystal oscillator toyocom TCO TCO-777KH

    Untitled

    Abstract: No abstract text available
    Text: Thermally enhanced Low VFB Step-Down LED Driver Thermally enhanced Low VFB Step-Down LED Driver ADT6780 ADT6780 概述 该ADT6780 是一款热增强型电流模式降压型 LED驱动芯片, 适用于各种高功率发光 LED的应用由于其工作范围宽 VIN : 4.5V~28V


    Original     		PDF ADT6780 925KHz

    SBP 9900

    Abstract: SBP9989
    Text: SBP 9960 SBP9960 PR O G R A M M A B LE CRU I/O EXPANDER 1.0 INTRODUCTION 1.1 GENERAL DESCRIPTION The SBP 9960 Programmable CRU I/O Expander is a ruggedized m onolithic software-configurable input/output device fabricated w ith oxide separated Integrated Injection Logic |2 l technology. The


    OCR Scan     		PDF SBP9960 //77/7X 28-PIN SBP 9900 SBP9989

    hall marking code A04

    Abstract: INTELDX4 write-through YSS 928
    Text: INTEL486 PROCESSOR FAMILY • lntelDX4TM P ro c e s s o r — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant I/O Buffers


    OCR Scan     		PDF INTEL486â 100-MHz 32-Bit 16K-Byte hall marking code A04 INTELDX4 write-through YSS 928

    mJI 1032

    Abstract: T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60
    Text: Ordering number: EN5055 CMOS LSI LC382161T-17 No. 5065 SA\YO 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x 16-bit x 2-bank organization. These DRAMs feature a


    OCR Scan     		PDF EN5055 LC382161T-17 LC382161 65536-word 16-bit 50-pin c17G7b 0D15317 mJI 1032 T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60

    tney2

    Abstract: HM5241 5241605
    Text: HM5241605 Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605 is offered in 2 banks for improved performance. _ F e a tu re s •3.3V Power s u p p


    OCR Scan     		PDF HM5241605 072-word 16-bit Hz/57 Hz/50 195/300/Kinko M19T041 tney2 HM5241 5241605

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F 8Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES • High frequency and 100 percent bus utilization • Fast cycle times: 10ns, 11ns and 12ns


    OCR Scan     		PDF MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization


    OCR Scan     		PDF MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F

    Untitled

    Abstract: No abstract text available
    Text: M m p n M 8 I 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH ZBT SRAM O lV ilU ^ IV IU MT55L128L18F, MT55L64L32F, MT55L64L36F ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 10ns, 11ns and 12ns Single +3.3V +5% power supply


    OCR Scan     		PDF MT55L128L18F, MT55L64L32F, MT55L64L36F 55L128L18F

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC V63C31321024 32K X 32 CMOS SYNCHRONOUS BURST PIPELINED SRAM PRELIMINARY Features Functional Description • ■ ■ ■ ■ ■ ■ ■ ■ The V63C31321024 is a high-speed synchro­ nous burst pipelined CMOS SRAM organized as 32,768 words by 32 bits that supports both ¡486/


    OCR Scan     		PDF V63C31321024 100-pin 680X0/Power V63C31321024 0M02MIN.

    D78 NEC

    Abstract: 986M
    Text: CB-C10 2.5-Volt, 0.25-M icron drawn CMOS Cell-Based ASIC NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 n.m drawn (0.18 (j.mL-effective)CB-C10family incorporates ultra-high-performance cores with deep sub­


    OCR Scan     		PDF CB-C10 CB-C10family D78 NEC 986M

    Untitled

    Abstract: No abstract text available
    Text: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series,


    OCR Scan     		PDF HM5216808C HM5216408C 576-word 152-word ADE-203-617 Hz/100 Hz/83 7777K\

    Untitled

    Abstract: No abstract text available
    Text: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,


    OCR Scan     		PDF HB526C264EN-10IN, HB526C464EN-10IN 576-word 64-bit ADE-203-737A HB526C264EN, HB526C464EN HB526C264EN

    X28C010

    Abstract: X28C256 XM28C010 XM28C010I
    Text: Prelim inary Inform ation 1 Megabit Module U XM28C010 r 1 28 K x 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES • Fast Write Cycle Times Supported by: — Internal Program Cycle 10 ms Max. — 64-byte Page — DATA Polling — Toggle Status Bit • High Rel Module Available with:


    OCR Scan     		PDF XM28C010 128Kx8 X28C256 32-Pin X28C010 64-byte 8C010 X28C256 XM28C010 XM28C010I

    x2864

    Abstract: TI25A X28C256BP-15 X28C256B X28C256BP15 xicor 2206 32768X8 T14174 X28C256B-15 X2864A
    Text: E4E D XI CO R INC • ^41743 0002510 1 ■ « P R E LIM IN A R Y IN F O R M A T IO N 256K Commercial Industrial X28C256B X28C256BI 32K x 8 Bit Electrically Erasable PROM FEATURES • 150 ns Access Time • LOW Power CMOS — 60 mA Active Current Max. — 200 ju.A Standby Current Max.


    OCR Scan     		PDF X28C256B X28C256BI 64-Byte X2864A X28C256B, X28C256BI 32-PAD x2864 TI25A X28C256BP-15 X28C256BP15 xicor 2206 32768X8 T14174 X28C256B-15 X2864A

    LT 3852

    Abstract: X2816C X2816CI c 3852 Scans-00120002
    Text: « K X 2Ô 16C 16K 2048 X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Tim e • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms


    OCR Scan     		PDF 640ms X2816C 120ns 150ns 200ns 24-Lead 32-Lead 32-Pad LT 3852 X2816C X2816CI c 3852 Scans-00120002

    ti35

    Abstract: revere load cell
    Text: “H Y U N D A I H Y 5 1 1 7 4 1 0 4M X S e r ie s 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF HY5117410 1AD06-10-MAYM 1AD06-10-MA HY5117410JC HY5117410UC HY5117410TC ti35 revere load cell

    R40 AH

    Abstract: No abstract text available
    Text: HM5283206 Series 131,072-word x 32-bit x 2-bank Synchronous Graphic RAM HITACHI ADE-203-223A Z Rev. 1.0 May. 30, 1996 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5283206 provides 2 banks to realize better performance. 8 column block write function and write per bit function are


    OCR Scan     		PDF HM5283206 072-word 32-bit ADE-203-223A Hz/83 Hz/66 z//77////////a QQ27flfl2 R40 AH

    NEC 421000

    Abstract: TTL 7404 421000 60 PD71088 7404 uPD421000 LS112 sn 7404 n ic diagram LM 7404 ic 421000
    Text: J V f« L Z NEC Electronics Inc. APPLICA TIO N NOTE 5 3 //P D 4 2 10 00 /y u P D 421 00 1/yu P D 4 21 002 1 - m e g a b it d y n a m ic r a m s Description NEC’s //PD421000, juPD421001, and ¿IPD421002 are 1-m egabit dynam ic RAMs DRAMs m anufactured with


    OCR Scan     		PDF uPD421000 uPD421001 uPD421002 18-Pin The//PD421000, PD421001, /PD421002 //PD421000-12 /PD421001-12 juPD421002-12 NEC 421000 TTL 7404 421000 60 PD71088 7404 LS112 sn 7404 n ic diagram LM 7404 ic 421000

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE IU IIC R D N 2 5 6 K X 1 8 , 1 2 o K X 3 2 /3 6 I LVTTL, FLOW-THROUGH ZBT SRAM d R M h H - .U IV I U MT55L256L18F, MT55L128L32F, MT55L128L36F ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • •


    OCR Scan     		PDF MT55L256L18F, MT55L128L32F, MT55L128L36F

    3240B

    Abstract: No abstract text available
    Text: HM5241605C Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-381B Z Rev. 2.0 Jan. 7, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance.


    OCR Scan     		PDF HM5241605C 072-word 16-bit ADE-203-381B Hz/57 44Rb203 3240B

    HM5241

    Abstract: HM5241605CTT15
    Text: HM5241605C Series Preliminary 131,072-w ord x 16-bit x 2-bank Synchronous Dynam ic RAM H IT A C A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance. Features • 3.3 V Power supply


    OCR Scan     		PDF HM5241605C 072-w 16-bit 400-mil 50-pin CP-50D) TTP-50D) HM5241 HM5241605CTT15

    Untitled

    Abstract: No abstract text available
    Text: CRYSTAL OSCILLATORS TOYOCOM ADDENDUM TOYOCOM also offers the following to meet your requirements. Further information on these products can be found in our “Crystal Clock Oscillators” catalog. Output Frequency Stability ppm Frequency Range (M Hz) O perating


    OCR Scan     		PDF -777ZH -776ZH -777ZH -776KH -706AC -787R -786SH -785YH -786R