transistor j6
Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
Text: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PI-f2731
PH2731-75L
transistor j6
J122 transistor
J6 transistor
transistor j122
j48 transistor
transistor 1015
J122
J122 npn
PH2731-75L
PACIFIC 1015
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MJE3055T
Abstract: No abstract text available
Text: SILICON P LASTIC POWER TRANSISTOR NPN MJE3055T 10A 75W Technical Data …designed for general-purpose switching and amplifier application. F F F F DC Current Gain - h FE = 20 – 100 @ IC = 4Adc Collector-Emitter Saturation Voltage – VCE sat = 1.1 Vdc (Max) @ IC = 4Adc
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MJE3055T
O-220
500kHz
MJE3055T
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TIP35C
Abstract: TIP36C tip35
Text: SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Recommended for 75W Audio Frequency C Amplifier Output Stage. J H Complementary to TIP36C. G Icmax:25A. L D d MAXIMUM RATING Ta=25
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TIP35C
TIP36C.
TIP35C
TIP36C
tip35
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TIP35C
Abstract: TIP36C TIP35C TI
Text: SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌRecommended for 75W Audio Frequency C Amplifier Output Stage. J H ᴌComplementary to TIP36C. G ᴌIcmax:25A. L D d MAXIMUM RATING Ta=25ᴱ
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TIP35C
TIP36C.
TIP35C
TIP36C
TIP35C TI
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Untitled
Abstract: No abstract text available
Text: PH1090-75L Avionics Pulsed Power Transistor 75W, 1030-1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH1090-75L
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TIP35CA
Abstract: No abstract text available
Text: SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 75W Audio Frequency H I Complementary to TIP36CA. R C J Amplifier Output Stage. G Icmax:25A. D L E MAXIMUM RATING Ta=25
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TIP35CA
TIP36CA.
TIP35CA
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 75W Audio Frequency H I Complementary to TIP36CA. R C J Amplifier Output Stage. G Icmax:25A. D L E MAXIMUM RATING Ta=25
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TIP35CA
TIP36CA.
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1030 mhz
Abstract: PH1090-75L
Text: PH1090-75L Avionics Pulsed Power Transistor 75W, 1030-1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH1090-75L
1030 mhz
PH1090-75L
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J122 transistor
Abstract: RF NPN POWER TRANSISTOR 3 GHZ PH2731-75L transistor j122
Text: PH2731-75L Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH2731-75L
J122 transistor
RF NPN POWER TRANSISTOR 3 GHZ
PH2731-75L
transistor j122
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PH3134-75S
Abstract: 75W transistor
Text: PH3134-75S Radar Pulsed Power Transistor 75W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH3134-75S
PH3134-75S
75W transistor
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3055t
Abstract: MJE2955T MJE305 MJE3055T 75W PNP
Text: MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation-PD = 75W at TC = 25°C. • DC current gain hFE = 20 Minimum at IC = 4.0A.
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MJE2955T,
3055T
400mA.
3055t
MJE2955T
MJE305
MJE3055T
75W PNP
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HF75-12
Abstract: transistors MRF454 MRF454 SD1405
Text: HF75-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 13 dB Min. @ 30MHz & 75W • Withstands 20:1 Load VSWR
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HF75-12
HF75-12
MRF454
SD1405
30MHz
transistors MRF454
MRF454
SD1405
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TRANSISTOR BV 32
Abstract: transistors MRF454 HF75-12 MRF454 SD1405
Text: HF75-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 18 dB Typical @ 30MHz & 75W • Withstands 20:1 Load VSWR
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HF75-12
HF75-12
MRF454
SD1405
30MHz
18ACTERISTICS
TRANSISTOR BV 32
transistors MRF454
MRF454
SD1405
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SMD TRANSISTOR R59
Abstract: 1N4148 equivalent SMD
Text: IRAUDAMP19 75W/4 x 2 Channel Class D Audio Power Amplifier Using the IR4301 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP19 Demo board; • Always wear safety glasses whenever operating Demo Board
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IRAUDAMP19
IR4301
IRAUDAMP19
AN1170
SMD TRANSISTOR R59
1N4148 equivalent SMD
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transistor 68W
Abstract: 68w transistor 68W npn onsemi marking R12 diode marking r14 ONSEMI NCS6415 NCS6415DWG NCS6415DWR2G TEA6415C TEA6415
Text: NCS6415 Bus−Controlled Video Matrix Switch Description The main function of the NCS6415 is to switch 8 video input sources to the 6 outputs. Each output can be switched to only one of the inputs, whereas any single input may be connected to several outputs.
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NCS6415
NCS6415
NCS6415/D
transistor 68W
68w transistor
68W npn
onsemi marking R12
diode marking r14 ONSEMI
NCS6415DWG
NCS6415DWR2G
TEA6415C
TEA6415
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA TIP35C TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency Amplifier Output Stage. • Complementary to TIP36C. • Icmax:25A. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC
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TIP35C
TIP36C.
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TIP35C
Abstract: TIP36C
Text: SEMICONDUCTOR TECHNICAL DATA TIP35C TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency Amplifier Output Stage. • Complementary to TIP36C. • Icmax:25A. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT
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TIP35C
TIP36C.
TIP35C
TIP36C
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75W NPN AUDIO
Abstract: TIP35C TIP36C transistor high power
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA TIP35C TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency Amplifier Output Stage. • Complementary to TIP36C. • Icmax:25A. DIM A B C D
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TIP35C
TIP36C.
75W NPN AUDIO
TIP35C
TIP36C
transistor high power
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PH3134-75S
Abstract: No abstract text available
Text: an AM P company Radar Pulsed Power Transistor, 75W, 1jxs Pulse, 10% Duty 3.1 • 3.4 GHz PH3134-75S Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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PH3134-75S
2-j11
PH3134-75S
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transistor j117
Abstract: j76 transistor CC-36 J1171 J117
Text: AfaCCM W an A M P company Radar Pulsed Power Transistor, 75W, 1jis Pulse, 10% Duty 3.1-3.4 GHz PH3134-75S Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geom etry
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PH3134-75S
transistor j117
j76 transistor
CC-36
J1171
J117
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FT324
Abstract: FT424 75W HI FI AMPLIFIER 75W NPN AUDIO FT317 tl 464 SOA 2N5401 matching transformer P A speaker 2N5830 1AAA1
Text: APPLICATIO N NOTE 336 • LINEAR 5flE D bSDllS4 007Tb33 ATI INSC 2 75W Hl FI AUDIO AMPLIFIER WITH LOW TRANSIENT INTERMODULATION DISTORTION Hans Palouda Until very recently, the trend in hi-fi audio am p lifie rs has been tow ards lo w er harm on ic and in te rm od ula tion disto rtion num bers.
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2N6364
Abstract: UHF TRANSISTOR 100-400MHz
Text: GAE GREAT AMERICAN ELECTROINCS 2N6364 Silicon NPN power UHF transistor 2N6364 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:
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2N6364
2N6364
100400Mhz
OT-161
UHF TRANSISTOR
100-400MHz
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common base amplifier
Abstract: No abstract text available
Text: GAE GREAT AMERICAN ELECTROINCS MSC1075M/M RP0912-75 Silicon NPN pulse power transistor MSC1075M/MRP0912-75 is designed for Class B and C common base amplifier applications in short pulse transmitters or radio location stations, telemetry and DME systems. Output Power:
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MSC1075M/MRP0912-75
MSC1075M/MRP0912-75
FO-57C
25tion
common base amplifier
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2N6364
Abstract: 75W NPN 100-400MHz 2N636
Text: GAE GREAT AMERICAN ELECTROINCS 2N6364 Silicon NPN power UHF transistor 2N6364 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:
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2N6364
2N6364
100400Mhz
OT-161
75W NPN
100-400MHz
2N636
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