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    Infineon Technologies AG BSM75GD120DN2BOSA1

    IGBT MOD 1200V 103A 520W
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    75GD120DN2 Datasheets Context Search

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    75GD120DN2

    Abstract: SIGC121T120R2C
    Text: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V


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    PDF SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041sawn A4682-A003 7171-M, 75GD120DN2

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    Abstract: No abstract text available
    Text: SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V


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    PDF SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041A4682-A003 7171-M,

    75GD120DN2

    Abstract: SIGC121T120R2C
    Text: SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V


    Original
    PDF SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041A4682-A003 7171-M, 75GD120DN2

    75GD120DN2

    Abstract: SIGC121T120R2C
    Text: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V


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    PDF SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041A4682-A003 7171-M, 75GD120DN2

    FZ1600R12KF4

    Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
    Text: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC


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    PDF 600V/1700V 500V/3300V 50GB60DLC 75GB60DLC 100GB60DLC 150GB60DLC 200GB60DLC 300GB60DLC FZ1600R12KF4 IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb

    75GD120DN2

    Abstract: BSM75GD120DN2
    Text: SIGC121T120R2C IGBT Chip in NPT-technology Features: • 1200V NPT technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling  integrated gate resistor Chip Type VCE SIGC121T120R2C 1200V This chip is used for:


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    PDF SIGC121T120R2C 75GD120DN2 SIGC121T120R2C L7171MM, BSM75GD120DN2

    BSM 50 GX 120 DN2

    Abstract: bsm 50 Gx 120 IGBT BSM20GD60DN2E3224 35GD120DN2E3224 25GD120DN2 25GD120DN2E3224 75GD120DN2 15gd120dn2e322 100GD120DN2 three phase bridge inverter 120 degree
    Text: „Econo“my improvement in inverter-converter-moduldesign Gottfried Ferber, eupec GmbH, Warstein-Belecke Ralf Jörke, eupec GmbH, Warstein-Belecke Christian Lammers, Ruhr-Universität Bochum Dr. Andreas Lenniger, eupec GmbH, Warstein-Belecke Abstract: To realise an economy inverter construction, it is a good solution to use high reliable


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    PDF 50GD120DN2G 75GD120DN2 100GD120DN2 100GT120DN2 150GT120DN2 200GT120DN2 DDB6U84N* 0A/1200V DDB6U100N* BSM 50 GX 120 DN2 bsm 50 Gx 120 IGBT BSM20GD60DN2E3224 35GD120DN2E3224 25GD120DN2 25GD120DN2E3224 75GD120DN2 15gd120dn2e322 100GD120DN2 three phase bridge inverter 120 degree