Untitled
Abstract: No abstract text available
Text: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
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EN4893
FX853
FX853
2SK1467
SB05-05P,
FX853]
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4886 FX603 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
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EN4886
FX603
FX603
2SJ187,
FX603]
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BX-1458
Abstract: IC UA 1458 marking 503 BX1458 2SB1202 FX503
Text: Ordering number:EN4903 FX503 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX503 houses two chips, each being equivalent
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EN4903
FX503
FX503
2SB1202,
FX503]
BX-1458
IC UA 1458
marking 503
BX1458
2SB1202
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marking 501
Abstract: BX1388
Text: Ordering number:EN4877 FX501 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX501 houses two chips, each being equivalent
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EN4877
FX501
FX501
2SB1205,
FX501]
marking 501
BX1388
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EN5030
Abstract: No abstract text available
Text: Ordering number:EN5030 FX510 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX510 houses two chips, each being equivalent
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EN5030
FX510
FX510
2SA1552,
FX510]
EN5030
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EN5387
Abstract: FX901 PNP Transistor MOSFET
Text: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low
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EN5387
FX901
FX901]
EN5387
FX901
PNP Transistor MOSFET
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FX207
Abstract: marking 207
Text: Ordering number:EN5050 FX207 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX207] Switching Time Test CIrcuit 1:No Contact 2:Gate
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EN5050
FX207
FX207]
FX207
marking 207
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4917 FX205 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · Low-voltage drive. unit:mm 2121 [FX205] Switching Time Test CIrcuit 1:No Contact
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EN4917
FX205
FX205]
750mmh
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TA-0118
Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS
Text: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
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EN4893
FX853
FX853
2SK1467
SB05-05P,
FX853]
TA-0118
MOSFET FOR 50HZ SWITCHING APPLICATIONS
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Untitled
Abstract: No abstract text available
Text: CS5231-3 CS5231-3 500mA, 3.3V Linear Regulator with Auxiliary Control Features Description The CS5231-3 combines a three-terminal linear regulator with circuitry controlling an external PFET transistor thus managing two input supplies. The part provides a 3.3V regulated
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CS5231-3
500mA,
CS5231-3
500mA
CS5231-3GDP5
CS5231-3GDPR5
CS5231-3GDF8
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FX604
Abstract: 2SK1467
Text: Ordering number:EN4887 FX604 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
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EN4887
FX604
FX604
2SK1467,
FX604]
2SK1467
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2SB1203
Abstract: FX505 ITR11390 ITR11391 bx13 n4879
Text: 注文コード No. N 4 8 7 9 FX505 No. N4879 O0500 FX505 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 ・PNP トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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FX505
N4879
O0500
FX505
2SB1203
750mm2
500mA
2SB1203
ITR11390
ITR11391
bx13
n4879
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2SC3647
Abstract: FX507 ITR11412 ITR11413 ITR11414
Text: 注文コード No. N 4 9 0 5 FX507 No. N4905 O3000 FX507 NPN エピタキシァルプレーナ形シリコントランジスタ 大電流スイッチング用 用途 ・液晶バックライトドライブ用。 特長 ・NPN トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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FX507
N4905
O3000
FX507
2SC3647
750mm2
100mA
2SC3647
ITR11412
ITR11413
ITR11414
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TA-2770
Abstract: 2SJ416 FX856 53723
Text: 注文コード No. N 5 3 7 2 A FX856 No. N 5 3 7 2 A 30100 新 開発速報 No. ※ 5372 とさしかえてください。 FX856 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード
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FX856
FX856
2SJ416
SB07-03P
750mm2
IT01339
IT01337
IT01341
IT01342
TA-2770
2SJ416
53723
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EN5052
Abstract: FX802 SB20W03P 2SB1302 50522
Text: Ordering number:EN5052 FX802 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode Twin type • Cathode Common DC-DC Converter Features Package Dimensions · Complex type of a low saturation voltage, high speed switching and large current PNP transistor and
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EN5052
FX802
FX802
2SB1302
SB20W03P,
FX802]
EN5052
SB20W03P
50522
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate
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EN5051
FX208
FX208]
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 4877 FX501 No.4877 I P N P Epitaxial P lan a r Silicon Transistor SA%YOi High-Current Switching Applications F eatures • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX501 houses two chips, each being equivalent to the 2SB1205, in one package.
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FX501
FX501
2SB1205,
42695MO
BX-1388
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SD marking
Abstract: No abstract text available
Text: Ordering number : EN 4888 _ FX605 No.4888 P-Channel Silicon MOSFET SA0YO I 1 ^— L Ultrahigh-Speed Switching Applications II_ _ F e a tu re s • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed
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FX605
FX605
2SJ190,
SD marking
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Untitled
Abstract: No abstract text available
Text: I Ordering num ber: EN4906 FX508 NPN Epitaxial P lanar Silicon Transistor S A \ Y O i H igh-Current Switching Applications A p p licatio n s • LCD backlight drive F e a tu re s •Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting.
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EN4906
FX508
FX508
2SD1815,
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Untitled
Abstract: No abstract text available
Text: Ordering number :EN4885 No-4885 FX602 // N-Channel Silicon MOSFET SAHYO i Ultrahigh-Speed Switching Applications • H L _ I I _ _ F eatu res ■Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed
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EN4885
No-4885
FX602
FX602
2SK2152,
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lift control
Abstract: FF-PSZS1030 rubber detection
Text: FF-SM SERIES CHART 1 M FF-SM - FIBER OPTIC C A B L E LENGTH: 5:5 m SPECIFICATIONS L COATING: 1. ALUMINIUM BULB PLATE 2. NITRILE BUTADIENE RUBBER DIMENSIONS: 075050: 750 X 500m m 2 / 100050: 1000 x 500m m 2 / 150050: 1500 x 500m m 2 / 075075: 7 50 x 750m m 2 /
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20MAY09
500mm2
750mm2
1000mm2/
1000mm2
FF-SMC100T
lift control
FF-PSZS1030
rubber detection
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Untitled
Abstract: No abstract text available
Text: Ordering num ber:EN 4903 _FX503 No.4903 i PN P E pitaxial Planar Silicon T ransistor High-Current Switching Applications F e a tu r e s •Composite type w ith 2 PN P tran sisto rs contained in one package, facilitating high-density mounting. • The FX503 houses two chips, each being equivalent to the 2SB1202, in one package.
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FX503
FX503
2SB1202,
|
RTO BH
Abstract: No abstract text available
Text: Ordering num ber:EN4877 _FX501 No.4877 i P N P E pitaxial P la n a r Silicon T ra n sisto r i High-Current Switching Applications F e a tu re s • Composite type w ith 2 P N P tran s isto rs contained in one package, facilitating high-density mounting.
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EN4877
FX501
FX50X
2SB1205,
RTO BH
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN4886 FX603 No.4886 \vo P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications _ u_ _ _ F e a tu re s • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed
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EN4886
FX603
FX603
2SJ187,
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