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    Samsung Semiconductor KM741006J-10

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    Abstract: No abstract text available
    Text: FÉE 8 4 1593 PRELIMINARY 741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Cycle Time: 12,5ns Max. • Low Power Dissipation (mln. Cycle, 100% Duty) 741006J-12: 190mA • Single 5V ± 5% Power Supply


    OCR Scan     		PDF KM741006J KM741006J-12: 190mA 741006J