GM72V66441ct
Abstract: GM72V66441 12A13 1641CT
Text: Preliminary VerO. 1 ,„ e . LG Semicon Co.,Ltd. 72V66441CT-7/8/10 4 , 194,304 w o r d x 4 b i t x 4 b a n k SYN C HR O N O U S DYNAM IC RAM Description The G M 72V66441C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics
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72V66441C
GM72V66441CT-7/8/10
BA1/A13
BA0/A12
GM72V66441CT
72V6644ICT
TTP-54D)
TTP-54D
GM72V66441ct
GM72V66441
12A13
1641CT
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GM72V66441
Abstract: GM72V66841
Text: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V66841C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.
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GM72V66841CT
72V66841C
GM72V66841CT
TTP-54D)
GM72V66441
GM72V66841
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gm72v661641ct
Abstract: 72V661641 GM72V661641 GM72V66441 vero cells 72V661641C 12A13 gm72v661641c
Text: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V661641C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.
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72V661641C
GM72V661641CT
GM72V661641CT
TTP-54D)
72V661641
GM72V661641
GM72V66441
vero cells
12A13
gm72v661641c
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