Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9 32,768 x 9 J d t PRELIMINARY IDT72V261 LA IDT72V271 LA Integrated Device Technology, Inc. FEATURES: • C hoose among the following m em ory organizations: IDT72V261 LA 1 6 ,3 8 4 x 9 IDT72V271 LA 3 2 ,7 6 8 x 9 • P in -c o m p a tib le w ith th e ID T 7 2 V 2 8 1 /7 2 V 2 9 1 and

ON 4673

Abstract: Transfer Clock in FWFT
Contextual Info: 3.3 VOLT CMOS SuperSync FIFO 16,384 x 9 32,768 x 9 FEATURES: • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V261LA — 16,384 x 9 72V271LA — 32,768 x 9 Pin-compatible with the IDT72V281/72V291 and IDT72V2101/

Contextual Info: 3.3 VOLT CMOS SuperSync FIFO 16,384 x 9 32,768 x 9 FEATURES: • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V261LA — 16,384 x 9 72V271LA — 32,768 x 9 Pin-compatible with the IDT72V281/72V291 and IDT72V2101/

en4900g

Abstract: EME-G600 71V3558X EN4900 EME-G700 7024S55PFG CRM1076 70261S55PFI 72v2111l15pfgi EN-4900
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A0811-01 DATE: 26-Mar-2009 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: Selective TQFP Packages (Standard and RoHS)

on 4673 equivalent

Abstract: 72V271LA IDT72V261LA IDT72V271LA
Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384 x 9 32,768 x 9 PRELIMINARY IDT72V261LA 72V271LA Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72V261LA 16,384 x 9 72V271LA 32,768 x 9 • Pin-compatible with the IDT72V281/72V291 and

72V271LA

Abstract: IDT72V261LA IDT72V271LA
Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384 x 9 32,768 x 9 PRELIMINARY IDT72V261LA 72V271LA Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72V261LA 16,384 x 9 72V271LA 32,768 x 9 • Pin-compatible with the IDT72V281/72V291 and

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9 32,768 x 9 PRELIMINARY IDT72V261 LA IDT72V271 LA Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72V261 LA 1 6 ,3 8 4 x 9 IDT72V271 LA 3 2 ,7 6 8 x 9 • P in -c o m p a tib le w ith the ID T 7 2 V 2 8 1 /7 2 V 2 9 1 and

a5aa

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family IDT72V261 IDT72V271 for exceptionally low power consumption. These FIFOs are

Contextual Info: 3.3 VOLT CMOS SuperSync FIFO 16,384 x 9 32,768 x 9 FEATURES: • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V261LA — 16,384 x 9 72V271LA — 32,768 x 9 Pin-compatible with the IDT72V281/72V291 and IDT72V2101/

PAEO

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9 32,768 x 9 \dt PRELIMINARY IDT72V261 LA IDT72V271 LA Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72V261LA 16,384 x9 72V271LA 3 2 ,7 6 8 x9 • P in -co m p a tib le w ith the ID T 72V 281/72V 291 and

IDT72V261

Abstract: IDT72V271
Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384 x 9, 32,768 x 9 IDT72V261 IDT72V271 Integrated Device Technology, Inc. FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family • 16,384 x 9-bit storage capacity IDT72V261

on 4673 equivalent

Contextual Info: 3.3 VOLT CMOS SuperSync FIFO 16,384 x 9 32,768 x 9 FEATURES: • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V261LA 16,384 x 9 72V271LA 32,768 x 9 Pin-compatible with the IDT72V281/72V291 and IDT72V2101/

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9 32,768 x 9 PRELIMINARY IDT72V261 LA IDT72V271 LA Irtegiated D eviœ Technology, lie . FEATURES: • Choose among the following memory organizations: IDT72V261 LA 1 6 ,3 8 4 x 9 IDT72V271 LA 3 2 ,7 6 8 x 9 • P in -c o m p a tib le w ith th e ID T 7 2 V 2 8 1 /7 2 V 2 9 1 and

philips diode PH 33J

Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without

IDT72V261

Abstract: IDT72V271
Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384 x 9, 32,768 x 9 IDT72V261 IDT72V271 Integrated Device Technology, Inc. FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family • 16,384 x 9-bit storage capacity IDT72V261

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72V261 IDT72V271 Integrated Device Technology, Inc. for exceptionally low power consumption. These FIFOs are monolithic, CMOS, high capacity, high speed, low power, first• 3.3 Volt operation saves 60 percent of power compared to

72V261LA

Abstract: IDT72V2101 IDT72V261LA IDT72V271LA Transfer Clock in FWFT
Contextual Info: 3.3 VOLT CMOS SuperSync FIFO 16,384 x 9 32,768 x 9 FEATURES: • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V261LA — 16,384 x 9 72V271LA — 32,768 x 9 Pin-compatible with the IDT72V281/72V291 and IDT72V2101/

UM61256FK-15

Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72V261 IDT72V271 Integrated Device Technology, Inc. for exceptionally low power consumption. These FIFOs are monolithic, CMOS, high capacity, high speed, low power, first• 3.3 Volt operation saves 60 percent of power compared to