"Video RAM"
Abstract: KM4216V256 KM4216C256
Text: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM a rray consists of 512 bit rows of 8192 bits. * Dual port A rchitecture 256K x 16 bits RAM port It operates like a conventional 256K x 16 C M O S DRAM. The RAM port has a write per bit m ask capability.
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4216C/V256
110ns
130ns
150ns
KM4216C256
120mA
110mA
100mA
KM4216V256
"Video RAM"
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ka7309
Abstract: TI 81W CAMERA 803 CMOS sync timing generator T3D 77 KS7214 78235 T3D 91 oil temperature sensor generator
Text: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - EIA/CCIR STANDARDS TIMING MODE - HI-BAND/ NORMAL TIMING MODE
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KS7214
KS7214
48-QFP-0707
37T37
71b4142
48-QFP-0707
ka7309
TI 81W
CAMERA 803 CMOS
sync timing generator
T3D 77
78235
T3D 91
oil temperature sensor generator
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16C256
Abstract: KM416C256DJ
Text: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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1C256D
256Kx16
40SOJ
KM416C256DJ
16C256
KM416C256DJ
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Untitled
Abstract: No abstract text available
Text: KM48C8004AS CMOS DRAM ELECTR O NICS 8 M x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package
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KM48C8004AS
KM48C8004A
16Mx4,
512Kx8)
48C8004AS
G03S50b
71L4142
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Untitled
Abstract: No abstract text available
Text: KS0093 26 COM / 80 SEG DRIVER & CONTROLLER FOR STN LCD MARCH. 1999. • 7 ^ 4 1 4 2 □□SA'na T71 i 26COM/8QSEG DRIVER & CONTROLLER FOR STN LCD KS0093 KS0093 Specification Revision History Content Version Date 0.0 Original 1998. 06 0.1 Miss typed contents changed
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KS0093
26COM/8QSEG
KS0093
71b4142
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Untitled
Abstract: No abstract text available
Text: The information in this data sheet can change upon complete cajaracterization and evaluation Of this new product. I f n A f\A Q A Iv U /W J ^ rO ^ » 110 M H z C M O S T r u e - C o lo r R A M D A C KDA0484 FEATURES ♦ 110,85MHz Pixel Clock ♦ 8 :1 , 4:1, 2:1,1:1 MUX Modes
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KDA0484
85MHz
32x32x2
256x8
KDA0484.
KDA0484
KDA0484L-110
110MHz
84-PLCC-SQ
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Untitled
Abstract: No abstract text available
Text: KM684002A CMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 15,17,20* Max. - Low Power Dissipation Standby (TTL) : 50* • (Max.) (CMOS): 10«» (Max.) Operating KM684002A- 15 : 170««(Max.) KM684002A-17 : 165*»(Max.)
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KM684002A
KM684002A-
KM684002A-17
KM684002AJ
36-SOJ-400
KM684002A
304-bit
0Q3bS24
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Untitled
Abstract: No abstract text available
Text: KM44C4110A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 44 C 4 110 A /A L/A LL /A S L is a high speed C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D ynam ic R andom
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KM44C4110A/AL/ALL/ASL
110ns
130ns
150ns
KM44C411OA/AL/ALL/ASL
24-LEAD
300MIL)
300MIL,
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Untitled
Abstract: No abstract text available
Text: KM4132G271 CMOS SGRAM 128K X 32Bit X 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS
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KM4132G271
32Bit
KM4132G271
D21L11
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LT104V4-101
Abstract: tcl lcd tv power circuit diagram
Text: SEMICONDUCTOR LT104V4-101 S pecifications July 1995, Rev. 0.0 P i r B Q o m am & } [ F f 7^(34142 O O ETTll 02^ • / CONTENTS PAGE General Description 1. 3 Absolute Maximum Rating 4 1-1 Environmental Absolute Ratings 1-2 Electrical Absolute Ratings 2. Optical Characteristics
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LT104V4-101
LT104V4-101
tcl lcd tv power circuit diagram
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7414 fast
Abstract: pin diagram of 7414 KM68257CJ TTL 7414 data KM68257CP-15 KM68257C KM68257C-12 KM68257C-15 KM68257C-20 KM68257CP-20
Text: CMOS SRAM KM68257C 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12, 15, 20 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM68257C-12 : 165 mA (Max.) KM 68257C-15 : 1 5 0 m A (Max.)
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KM68257C
32Kx8
KM68257C-12
KM68257C-15
150mA
KM68257C-20
KM68257CP
28-DIP-300
KM68257CJ
28-SQJ-300
7414 fast
pin diagram of 7414
KM68257CJ
TTL 7414 data
KM68257CP-15
KM68257C
KM68257C-12
KM68257C-15
KM68257C-20
KM68257CP-20
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tl527
Abstract: 741i NCN30
Text: Advance Information KM 29V64000T/R FLASH M EM O RY 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The K M 29V 64000T /R is a 8 M 8 ,38 8 ,6 0 8 x8 bit N A N D • O rganization Plash m em ory w ith a sp a re 2 5 6 K (2 6 2 ,1 4 4 )x 8 bit.
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KM29V64000T/R
200us
tl527
741i
NCN30
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KM718BV87-12
Abstract: No abstract text available
Text: PRELIMINARY 64Kx18 Synchronous SRAM KM718BV87 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. The KM718BV87 is a 1,179,648 bit Synchronous Static Random Access Memory designed to support zero wait
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KM718BV87
64Kx18
18-Bit
52-Pin
KM718BV87
KM718BV87-12
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ti77
Abstract: BV EI 301
Text: PRELIM INARY KM 29V16000ATS/RS FLASH M EM O RY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization • - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase
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KM29V16000ATS/RS
250us
KM29V16000A
Figure15
0D242fl2
ti77
BV EI 301
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Untitled
Abstract: No abstract text available
Text: KM44C1003C/CL/CSL CMOS DRAM 1M x4B it CMOS Quad CAS RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM44C1003C/CIVCSL-5 50ns 13ns 90ns KM44Ú1003C/CL/CSL-6 60ns 15ns 110ns KM44C1003C/CL/CSL-7 70ns 20ns 130ns KM44C1003C/CL/CSL-8
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KM44C1003C/CL/CSL
KM44C1003C/CIVCSL-5
1003C/CL/CSL-6
110ns
KM44C1003C/CL/CSL-7
130ns
KM44C1003C/CL/CSL-8
150ns
cycle/16m
7TL4142
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Untitled
Abstract: No abstract text available
Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or
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KM416C254D,
KM416V254D
16Bit
256Kx16
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Untitled
Abstract: No abstract text available
Text: KM44C4004BK CMOS DRAM ELECTRONICS 4 M x 4 Bit C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4004BK
512Kx8)
7Tb414E
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Untitled
Abstract: No abstract text available
Text: KS57C0002 4-BIT CMOS Microcontroller ELECTRONICS Product Specification 2 OVERVIEW The KS57C0002 single-chip CMOS microcontroller is designed for high-performance using Samsung's newest 4-bit CPU core. With a four-channel comparator, eight LED direct drive pins, serial I/O interface, and a versatile
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KS57C0002
KS57C0002
30-pin
Me57C0002
fx/64,
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Untitled
Abstract: No abstract text available
Text: KM4 I C I 6000B S CMOS DRAM ELECTRONICS 16M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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6000B
16Mx1
KM41C16000BS
0G34Q05
71b4142
0034QGfc>
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Untitled
Abstract: No abstract text available
Text: KM644002/L CMOSSRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500«A (Max.) Operating : KM644002-17 : 170mA (Max.)
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KM644002/L
KM644002-17
170mA
KM644002-20:
150mA
KM644002-25:
130mA
KM644002J/LJ
32-SOJ-400
KM644002/L
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C 4 1 05B S ELECTRONICS CMOS D R A M 4 M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
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16Mx4,
512Kx8)
KM44C4105BS
GG34727
71b4142
Q03472Ã
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Untitled
Abstract: No abstract text available
Text: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port
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KM4216C/V256
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250M
Abstract: IRFS624
Text: N-CHANNEL POWER MOSFETS IRFS624 FEATURES • Lower R dsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFS624
IRFS624
O-220
250M
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KM48V2100B
Abstract: 2100BK
Text: KM48V2100BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM48V2100BK
16Mx4,
512Kx8)
2100BK
71L4142
KM48V2100B
2100BK
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