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    71K41 Search Results

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    71K41 Price and Stock

    TDK Electronics B72210S0171K412

    VARISTOR 270V 2.5KA DISC 10MM
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    DigiKey B72210S0171K412 Reel 3,000
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    • 10000 $0.13575
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    TDK Corporation B72210S171K412

    Varistor Metal Oxide 175V 380pF 25A 455V Through Hole T/R - Tape and Reel (Alt: B72210S0171K412)
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    Avnet Americas B72210S171K412 Reel 20 Weeks 3,000
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    TDK Corporation B72210S0171K412

    Varistors 175VAC 10% 10mm StandarD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics B72210S0171K412
    • 1 $0.43
    • 10 $0.367
    • 100 $0.274
    • 1000 $0.167
    • 10000 $0.156
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    Safran Group 8571K4-16

    8571K4-16 |Safran Power 8571K4-16
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 8571K4-16 Bulk 50
    • 1 $157.9
    • 10 $157.9
    • 100 $150
    • 1000 $144.74
    • 10000 $144.74
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    SAFRAN 8571K4-16

    Toggle Switch,2 Pole, ON-NONE-ON, Sealed,115VAC,15A, Wire Terminals, MS27723-23 | Safran Electrical & Power 8571K4-16
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    RS 8571K4-16 Bulk 50
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    • 100 $159.48
    • 1000 $159.48
    • 10000 $159.48
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    71K41 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MMBC1009F3

    Abstract: No abstract text available
    Text: 'SAMSUNG SEM ICO NDUCTOR .INC MMBC1009F3 14E D |71k41»l2 0007531 4 f NPN EPITAXIAL SILICON TRANSISTOR T-31-19 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 öC Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		MMBC1009F3 T-31-19 OT-23 100MHz PDF

    samsung NAND FSR

    Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
    Text: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte


    OCR Scan     		KM29N16000 KM29N16000 -TSOP2-400F -TSOP2-400R samsung NAND FSR 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    OCR Scan     		KM416C254D, KM416V254D 16Bit 256Kx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S E M I C O ND U CT OR INC D2 ' ' ¡>Ëj 7 ^ 4 1 4 2 ' KS5112 OOOSbSl 0 §1 5651 D ^ ° *CMOS DIGITAL INTEGRATED CIRCUIT 5-FUNCTION 6-DIGIT WATCH CIRCUIT FOR TRIPLEXED LCD. The KS5112 is a CMOS LSI which contains all logic necessary to implement a five function, six digits liquid crystal display watch. The


    OCR Scan     		KS5112 KS5112 768Hz PDF

    KM62256P-10

    Abstract: No abstract text available
    Text: S A M S U N G S E M I C O N D U C T O R INC TÖ ' " :" DE| 7 ^ 4 1 4 2 □□□5545 T-46-23-14 KM62256P/KM62256LP CMOS SRAM 32K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 1 0 0 ,1 2 0 ,150ns max. • Low Power Dissipation Standby: 0.55mW (max.).


    OCR Scan     		T-46-23-14 KM62256P/KM62256LP 150ns 248mW KM62256P/LP KM62256LP KM62256P-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5321000BV/BVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5321000BV is a 1M bits x 32 Dynam­ ic RAM high density memory module. The Samsung KMM5321000BV consist of eight CMOS 1 Mx 4 bit


    OCR Scan     		KMM5321000BV/BVG 1Mx32 KMM5321000BV 20-pin 72-pin 110ns KMM5321000BV-7 130ns KMM5321000BV-8 PDF

    256x16* STATIC RAM

    Abstract: 10 35L W9 10 35L W1 10 35L W8 sc 4145 KM4216C256 KM4216V256 74143 10 35L a8 capacitor 0051142
    Text: CMOS VIDEO RAM KM4216C/V256 2 56K X 16 B it CMOS Video HAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port


    OCR Scan     		KM4216C/V256 110ns 130ns 150ns KM4216C256 120mA 110mA 100mA KM4216V256 256x16* STATIC RAM 10 35L W9 10 35L W1 10 35L W8 sc 4145 74143 10 35L a8 capacitor 0051142 PDF