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    71H4 Search Results

    71H4 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    KRM55WR71H476MH13K Murata Manufacturing Co Ltd X7R (EIA) 50Vdc 47μF±20% Visit Murata Manufacturing Co Ltd
    KRM55WR71H476MH13L Murata Manufacturing Co Ltd X7R (EIA) 50Vdc 47μF±20% Visit Murata Manufacturing Co Ltd
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    71H4 Price and Stock

    Murata Manufacturing Co Ltd GRM155C71H473JE19D

    CAP CER 0.047UF 50V X7S 0402
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    DigiKey GRM155C71H473JE19D Reel 20,000 10,000
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    Murata Manufacturing Co Ltd GRM21BC71H475KE11K

    CAP CER 4.7UF 50V X7S 0805
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    DigiKey GRM21BC71H475KE11K Reel 10,000 10,000
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    GRM21BC71H475KE11K Cut Tape 7,306 1
    • 1 $0.4
    • 10 $0.264
    • 100 $0.1582
    • 1000 $0.10548
    • 10000 $0.09438
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    Kyocera AVX Components KGM31BR71H471KT

    CAP CER 470PF 50V X7R 1206
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    DigiKey KGM31BR71H471KT Reel 8,000 4,000
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    KGM31BR71H471KT Cut Tape 2,002 1
    • 1 $0.25
    • 10 $0.161
    • 100 $0.0915
    • 1000 $0.05948
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    Kyocera AVX Components KGM21NR71H471MT

    CAP CER 470PF 50V X7R 0805
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    DigiKey KGM21NR71H471MT Reel 4,000 4,000
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    Kyocera AVX Components KAE15AR71H473KT22

    CAP CER 0.047UF 50V X7R 0603
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    DigiKey KAE15AR71H473KT22 Reel 4,000 4,000
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    71H4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    xPC603E

    Abstract: MPE603EFE133LN MPC603EFE133LN MPC603EFE100LN MPC603EFE100TN MPC603ERX100LN MPC603ERX100TN MPC603ERX133LN MPC603ERX133TN MPE603EFE100LN
    Text: ª Freescale Semiconductor, Inc. PID6-603e_N PNS 980521 Motorola Part Numbers Affected: MPC603ERX100LN MPC603ERX133LN MPE603ERX100LN MPE603ERX133LN MPC603EFE100LN MPC603EFE133LN MPE603EFE100LN MPE603EFE133LN MPC603ERX100TN MPC603ERX133TN MPC603EFE100TN MPC603EFE133TN


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    PDF PID6-603e MPC603ERX100LN MPC603ERX133LN MPE603ERX100LN MPE603ERX133LN MPC603EFE100LN MPC603EFE133LN MPE603EFE100LN MPE603EFE133LN MPC603ERX100TN xPC603E MPE603EFE133LN MPC603EFE133LN MPC603EFE100LN MPC603EFE100TN MPC603ERX100LN MPC603ERX100TN MPC603ERX133LN MPC603ERX133TN MPE603EFE100LN

    2.54 mm pitch BERG stick

    Abstract: concept 2114s STANDARD 2.54 PITCH BERG STICK STANDARD 2.54 PITCH BERG STICK 4 pin connector 2 mm pitch BERG stick 1251SM-02 13002 and 13003 power transistor 50 pin 2x25, 2mm pitch berg connectors PIN 11375-1 OZ 9902
    Text: ND3% BASE1 XXXX5115-0708-1-P 708 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 16:45 TS:TS date TS time CONNECTORS & ACCESSORIES Find Datasheets Online SOCKETS – DIP/SIP AMP DIPLOMATE DUAL LEAF DL SIP SOCKETS (CONT.) SIP SOCKETS PHOSPHOR BRONZE WITH TIN PLATING


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    PDF 50F2249 46F4434 46F4437 922576-20-I 922576-26-I 922576-34-I 922576-40-I 922576-50-I 65F198 65F199 2.54 mm pitch BERG stick concept 2114s STANDARD 2.54 PITCH BERG STICK STANDARD 2.54 PITCH BERG STICK 4 pin connector 2 mm pitch BERG stick 1251SM-02 13002 and 13003 power transistor 50 pin 2x25, 2mm pitch berg connectors PIN 11375-1 OZ 9902

    BGA and QFP Package ibm

    Abstract: XPC603EFE xPC603E MPC603EFE133LN MPC603EFE100LN MPC603EFE100TN MPC603ERX100LN MPC603ERX100TN MPC603EUM/AD Rev 1 MPC603ERX133TN
    Text: PID6-603e_N PNS 980521 Motorola Part Numbers Affected: MPC603ERX100LN MPC603ERX133LN MPE603ERX100LN MPE603ERX133LN MPC603EFE100LN MPC603EFE133LN MPE603EFE100LN MPE603EFE133LN MPC603ERX100TN MPC603ERX133TN MPC603EFE100TN MPC603EFE133TN ª Application-SpeciÞc Information


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    PDF PID6-603e MPC603ERX100LN MPC603ERX133LN MPE603ERX100LN MPE603ERX133LN MPC603EFE100LN MPC603EFE133LN MPE603EFE100LN MPE603EFE133LN MPC603ERX100TN BGA and QFP Package ibm XPC603EFE xPC603E MPC603EFE133LN MPC603EFE100LN MPC603EFE100TN MPC603ERX100LN MPC603ERX100TN MPC603EUM/AD Rev 1 MPC603ERX133TN

    xPC603E

    Abstract: XPC603EFE MPC603EFE133LN marking code motorola ic BGA and QFP Package MPC603EFE100TN Apple Corporation MPE603ERX133 MPE603EFE133LN part marking sc 4c
    Text: ª Freescale Semiconductor, Inc. PID6-603e_N PNS 980521 Motorola Part Numbers Affected: MPC603ERX100LN MPC603ERX133LN MPE603ERX100LN MPE603ERX133LN MPC603EFE100LN MPC603EFE133LN MPE603EFE100LN MPE603EFE133LN MPC603ERX100TN MPC603ERX133TN MPC603EFE100TN MPC603EFE133TN


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    PDF PID6-603e MPC603ERX100LN MPC603ERX133LN MPE603ERX100LN MPE603ERX133LN MPC603EFE100LN MPC603EFE133LN MPE603EFE100LN MPE603EFE133LN MPC603ERX100TN xPC603E XPC603EFE MPC603EFE133LN marking code motorola ic BGA and QFP Package MPC603EFE100TN Apple Corporation MPE603ERX133 MPE603EFE133LN part marking sc 4c

    xPC603E

    Abstract: MPC603ERX100TN PLL 120Mhz MPC603EFE133LN MPC603EFE100LN MPC603EFE100TN MPC603ERX100LN MPC603ERX133LN MPC603ERX133TN MPE603EFE100LN
    Text: ª PID6-603e_N PNS 980521 Freescale Semiconductor, Inc.Motorola Part Numbers Affected: MPC603ERX100LN MPE603ERX100LN MPC603EFE100LN MPE603EFE100LN MPC603ERX100TN MPC603EFE100TN Application-SpeciÞc Information MPC603ERX133LN MPE603ERX133LN MPC603EFE133LN MPE603EFE133LN


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    PDF PID6-603e MPC603ERX100LN MPE603ERX100LN MPC603EFE100LN MPE603EFE100LN MPC603ERX100TN MPC603EFE100TN MPC603ERX133LN MPE603ERX133LN MPC603EFE133LN xPC603E MPC603ERX100TN PLL 120Mhz MPC603EFE133LN MPC603EFE100LN MPC603EFE100TN MPC603ERX100LN MPC603ERX133LN MPC603ERX133TN MPE603EFE100LN

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D KM48V512A/AL/ALL • TTbMlME DCISTMB 071 «SIICK CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM48V512A/AL/ALL-7 70ns 20ns 130ns KM48V512A/AL/ALL-8


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    PDF KM48V512A/AL/ALL KM48V512A/AL/ALL-7 130ns KM48V512A/AL/ALL-8 150ns cycle/16ms cycle/128ms cycle/128mLA 28-LEAD 71b4142

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit


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    PDF KMM5361000A/AG Q014Sh4 361000A bitsX36 20-pin 72-pin 361000A- 130ns

    Untitled

    Abstract: No abstract text available
    Text: KS0122 Multimedia ELECTRONICS MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required clocks and video timing signals are


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    PDF KS0122 KS0122 GD33bD7 0033b0fl

    KM44V1000C

    Abstract: No abstract text available
    Text: KM44V1OOOC/CL/CLL CMOS DRAM 1M x4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM44V1000C/CL/CLL-6 60ns 15ns 110ns KM44V1000C/CL/CLL-7 70ns 20ns 130ns KM44V1000C/CL/CLL-8 80ns 20ns 150ns > Fast Page Mode operation


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    PDF KM44V1OOOC/CL/CLL KM44V1000C/CL/CLL-6 110ns KM44V1000C/CL/CLL-7 130ns KM44V1000C/CL/CLL-8 KM44V1000C/CL/CLL 150ns 20-LEAD KM44V1 KM44V1000C

    Untitled

    Abstract: No abstract text available
    Text: KA340TXX Industrial 3-TERMINAL 1A POSITIVE VOLTAGE REGULATORS TO-220 The KA340XX series ot three.terminai positive voltage regulators are available in T0-220 package and with several fixed output voltages, providing better performance than 78XX series regulators


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    PDF KA340TXX O-220 KA340XX T0-220

    Untitled

    Abstract: No abstract text available
    Text: K M 4 8 C 2 10 4 B S CMOS D R A M ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF 16Mx4, 512Kx8) KM48C2104BS

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS I NC b7 E D • 7^4142 KM41C16001 DGlbOfl? Q B E ■ CMOS DRAM 1 6 M x 1 Bit CM O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM41C16001 is a CMOS high speed 16,777,216 bit x 1 Dynamic Random A ccess Memory. Its


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    PDF KM41C16001 KM41C16001 110ns KM41C16001-7 130ns KM41C16001-8 150ns KM41C16001-6

    KM416V4104AS

    Abstract: No abstract text available
    Text: KM416V4104AS CMOS D R A M ELECTRONICS 4 M x 1 6 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,


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    PDF KM416V4104AS 4Mx16 D033TbS KM416V4104AS

    KM428C128

    Abstract: No abstract text available
    Text: SAMSUNG ELECTR ONI CS INC bHE D • 7Tb4142 GD13ÖSb ES7 I SMGK PRELIMINARY KM428C128 CMOS VIDEO RAM 12 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance Speed — -Parameter


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    PDF 7Tb4142 KM428C128 100ns 125ns 150ns 180ns 40-PIN 40/44-PIN KM428C128

    KM428C257

    Abstract: KM428C256 Video RAM G022134 mz57
    Text: KM428C256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C256 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.


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    PDF KM428C256 512x8 110ns 130ns 150ns 110mA 100mA DD22151 40-PIN KM428C257 KM428C256 Video RAM G022134 mz57

    BUT-11

    Abstract: BUT11 BUT11A transistor VCE 1000V to220 but11 transistor NPN Transistor VCEO 1000V
    Text: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Rating Collector Emitter Voltage : BUT11 : BUT11A Collector Emitter Voltage : BUT11 : BUT11A Emitter Base Voltage


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    PDF BUT11/11A BUT11 BUT11A O-220 71bm4E BUT-11 BUT11A transistor VCE 1000V to220 but11 transistor NPN Transistor VCEO 1000V

    3.58MHZ crystal oscillator

    Abstract: P9352 d2p8 P131A
    Text: K S 5 7 P 5 0 16MTP Microcontroller ELECTRONICS KS57P5016 MTP The KS57P5016 single-chip CMOS microcontroller is the MTP Multiple Times Programmable version of the KS57C5016 microcontroller. It has an on-chip E2PROM instead of masked ROM. The KS57P5016 is fully


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    PDF 16MTP KS57P5016 KS57C5016 KS57C5016. KS57P5016MTP 71b414a 3.58MHZ crystal oscillator P9352 d2p8 P131A

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000BT C MOS DR A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    PDF KM416C1000BT 1Mx16 000BT GD3D53b

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C157B/BL/BLL 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM416C157B/BL/BLL-5 The S a m sun g K M 4 1 6 C 1 5 7 B /B L /B L L is a C M O S high tRAC tCAC tRC s p e e d 2 6 2 ,1 4 4 b it x 1 6 D y n a m ic R a n d o m A c c e s s


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    PDF KM416C157B/BL/BLL KM416C157B/BL/BLL-5 KM416C157B/BL7BLL-6 110ns KM416C157B/BL7BLL-7 130ns KM416C157B/BLVBLL-8 150ns 1-DQ16 KM416C157

    Untitled

    Abstract: No abstract text available
    Text: KM48C514DT CMOS DRAM ELECTRONICS 512 K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    PDF KM48C514DT 512Kx 512Kx8 BH0B90BRBRBHHH KM48C514DT)

    CS 13001

    Abstract: HA 13001 KA2411 13001 8-DIP-300 B 13001 VSI drive KA2410 6800-D
    Text: LINEAR INTEGRATED CIRCUIT KA2410/1 8-DIP-300 TONE RINGER The KA2410/KA2411 is a bipolar integrated circuit designed for telephone bell replacement. FUNCTIONS • Two oscillators • Output am plifier • Power supply control circuit FEATURES • • • •


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    PDF KA2410/1 KA2410/KA2411 KA2410) KA2411) 8-DIP-300 KA2414 KA2410 CS 13001 HA 13001 KA2411 13001 8-DIP-300 B 13001 VSI drive 6800-D

    Untitled

    Abstract: No abstract text available
    Text: S A M S UN G E L E C T R O N I C S INC b7E D • 7^4142 KM48C2000 DDlb2fiS G41 ■ SMGK CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM48C2000 is a CMOS high speed 2,097,152 b it x 8 D ynam ic Random A ccess M em ory. Its


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    PDF KM48C2000 KM48C2000 KM48C2000-6 110ns KM48C2000-7 130ns KM48C2000-8 150ns 28-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required


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    PDF KS0122 KS0122 0D3153b 71b4142 100-QFP-1420C