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    KM44C4104bk

    Abstract: cd-rom circuit diagram
    Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM44C4 KM44C4104BK 7Tbm42 0034bb2 KM44C4104bk cd-rom circuit diagram

    D0233

    Abstract: 250JUA 250M IRFS340 IRFS341 Tj-25DC
    Text: N-CHANNEL POWER MOSFETS IRFS340/341 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRFS340/341 IRFS340 IRFS341 71b4142 2ti35ti D0233 250JUA 250M Tj-25DC

    Untitled

    Abstract: No abstract text available
    Text: KM44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44V1004DT 1b4142

    KS57C2616

    Abstract: LC5012 64 pin IC microcontroller LCD ic 555 timer 10 minute buzzer obo 112 KS57C2516
    Text: KS57C261& 4-BIT CMOS Microcontroller ELECTRONICS „ J ^ , Product Specification OVERVIEW The KS57C2616 single-chip CMOS microcontroller is designed for high performance using Samsung's newest 4-bit CPU core. With its up-to-896-dot LCD direct drive capability, flexible 8-bit and 16-bit timer/counters, and


    OCR Scan     		PDF KS57C261& KS57C2616 up-to-896-dot 16-bit 100-pin 4D02bH43 71b4142 LC5012 64 pin IC microcontroller LCD ic 555 timer 10 minute buzzer obo 112 KS57C2516

    KA8507

    Abstract: compressor 74142 logic diagram KA8507D 20-DIP-300A
    Text: KA8507 LINEAR INTEGRATED CIRCUIT COMPANDOR KA8507 is a automatic gain control system that ¡s used for dynamic range compression and expansion. According to the companding the signal, this can reduce the noise components. KA8507 includes compressor, expander, pre-amp, filter amp, limiter


    OCR Scan     		PDF KA8507 KA8507 20-DIP-300A 20-SOP-375 KA8507D 620ohm compressor 74142 logic diagram 20-DIP-300A

    IRLZ14A

    Abstract: No abstract text available
    Text: IRLZ14A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVdss = 60 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |iA Max. @ VDS= 60V


    OCR Scan     		PDF IRLZ14A O-220 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D IRLZ14A

    KA8601C

    Abstract: No abstract text available
    Text: KA8601C ELECTRONICS Telephone INTRODUCTION The KA8601C is a monolithic integrated circuit for use in high perfor­ mance speaker phone system. The KA860IC consists of speaker phone and speech network. Speaker phone includes attenuators, amplifiers, level detectors, attenuator


    OCR Scan     		PDF KA8601C KA8601C KA860IC 003D777 8601C 0-DIP-600B 48-SDf-600 KA8601C)

    samsung km28C256

    Abstract: KM28C256-15 KM28C256 KM28C256-20 KM28C256I-15 KM28C256I-20
    Text: S A M S UN G E L E C T R O N I C S INC 7Rb4142 ODlk^OM 2 n b?E D KM28C256 CMOS EEPROM 3 2 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte Write & Page Write


    OCR Scan     		PDF 7Rb4142 KM28C256 32Kx8 KM28C256I: 64-byte 150ns 100/iAâ 5555H samsung km28C256 KM28C256-15 KM28C256 KM28C256-20 KM28C256I-15 KM28C256I-20

    DRAM 18DIP

    Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
    Text: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its


    OCR Scan     		PDF KM41C1000CSL KM41C1000CSL-6 110ns KM41C1000CSL-7 130ns KM41C1000CSL-8 150ns 100fiA 100/A cycle/128ms DRAM 18DIP DRAM 256kx4

    ic ka3842b

    Abstract: PWM IC 8 PIN DIP KA3842 KA3842B ic ka3842b with pin KA3842 ka3842 application notes Diode RL 4B KA3843B KA3844 KA3844B
    Text: SAMSUNG ELECTRONICS INC b7E » KA3842B/3B/4B/5B • 7ti b M m 2 0017400 247 ■ SIIGK LINEAR INTEGRATED CIRCUIT CURRENT-MODE PWM CONTROLLERS The KA3842B/3B/4B/5B are fixe frequency current-mode PWM controller. They are specially designed for Off-Line and DC-to-DC converter applications with minimal.external


    OCR Scan     		PDF G0174D6 KA3842B/3B/4B/5B KA3842B KA3844B KA3843B KA384itor, KA3842B ic ka3842b PWM IC 8 PIN DIP KA3842 ic ka3842b with pin KA3842 ka3842 application notes Diode RL 4B KA3844

    Untitled

    Abstract: No abstract text available
    Text: Rr€íir'in<!‘Y CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI 64K X 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION The KM616V1002B/BL is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits.


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI KM616V1002B/BL 576-bit 400mil March-1997