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    Siemens 3RT20171BM42

    CONTACTOR S00 12A 220VDC 1NC SCR
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    71BM42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4.19MHz crystal

    Abstract: KS57C2504 B4MS
    Text: KS57C2504 4-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS57C2504 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With up to 320-dot LCD direct-drive capability, 8-bit timer/counter, serial I/O, and comparator, the KS57C2504 offers an


    OCR Scan     		PDF KS57C2504 KS57C2504 320-dot 0011B. 0000B. 1001B, 04ST7D 4.19MHz crystal B4MS

    ka7309

    Abstract: TI 81W CAMERA 803 CMOS sync timing generator T3D 77 KS7214 78235 T3D 91 oil temperature sensor generator
    Text: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - EIA/CCIR STANDARDS TIMING MODE - HI-BAND/ NORMAL TIMING MODE


    OCR Scan     		PDF KS7214 KS7214 48-QFP-0707 37T37 71b4142 48-QFP-0707 ka7309 TI 81W CAMERA 803 CMOS sync timing generator T3D 77 78235 T3D 91 oil temperature sensor generator

    KM44C4104bk

    Abstract: cd-rom circuit diagram
    Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM44C4 KM44C4104BK 7Tbm42 0034bb2 KM44C4104bk cd-rom circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: KM48C514D, KM48V514D CMOS DRAM 512Kx 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time(-5,-6,-7), power consumption(Normal or Low


    OCR Scan     		PDF KM48C514D, KM48V514D 512Kx 512Kx8

    Untitled

    Abstract: No abstract text available
    Text: KA8513B FM IF RECEIVER INTRODUCTION The KA8S13B is designed for FM IF Detection on the pager set It includes voltage regulator, low battery detection circuit. Mixer, Oscillator. FS K comparator and limiting IF Amplifier. FEATURES • Operating Voltage Range: 1.0 ~ 4.0V


    OCR Scan     		PDF KA8513B KA8S13B 50MHz 1200bps KA8513BD 20-SS0P-225 455KHZ 10MAX 30-SS0P-375

    Untitled

    Abstract: No abstract text available
    Text: KS9282B CMOS INTEGRATED CIRCUIT DSP+DAC 16BIT FOR CDP The KS9282B is a CMOS integrated circuit designed for the Digital Audio Signal processor of the CDP (Compact Disc Player) application. It is a Monolithic IC that builts-in 16-Bit Digital to Analog Converter to add to the conventional DSP function.


    OCR Scan     		PDF KS9282B 16BIT) KS9282B 16-Bit

    KMM366S403BTN-G2

    Abstract: KMM366S403BTN-G0
    Text: KMM366S403BTN NEW JEDEC SDRAM MODULE KMM366S403BTN SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403BTN is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S403BTN KMM366S403BTN 4Mx64 400mil 168-pin DD373b2 KMM366S403BTN-G2 KMM366S403BTN-G0

    Untitled

    Abstract: No abstract text available
    Text: KM4132G271 CMOS SGRAM 128K X 32Bit X 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		PDF KM4132G271 32Bit KM4132G271 D21L11

    Untitled

    Abstract: No abstract text available
    Text: KSR1204 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r Built In T O -92 S • Switching circuit. Inverter. Interlace circuit Driver circuit • Built in bias Resistor(R, = 47K!J, Rj=47K fi) • Complement to KSR2204 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSR1204 KSR2204 0GE4T31 71bm42

    RAS 1210 SUN HOLD

    Abstract: sun hold RAS 1220 sun hold ras 1210
    Text: CMOS DRAM KM416V1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION T h e S a m sun g K M 4 16V 1204A /A -L7A -F is a C M O S high • Performance range: tRA C tC A C tR C tH PC 24ns KM416V1204A-6/A-L6/A-F6 60ns 17ns


    OCR Scan     		PDF KM416V1204A/A-L/A-F KM416V1204A-6/A-L6/A-F6 110ns KM416V1204A-7/A-L7/A-F7 130ns KM416V1204A-8/A-L8/A-F8 150ns 42-LEAD 44-LEAD RAS 1210 SUN HOLD sun hold RAS 1220 sun hold ras 1210

    Untitled

    Abstract: No abstract text available
    Text: KM4 I C I 6000B S CMOS DRAM ELECTRONICS 16M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF 6000B 16Mx1 KM41C16000BS 0G34Q05 71b4142 0034QGfc>

    C1204B

    Abstract: tsop 3021 DIN 3021 STANDARD AA3021
    Text: KM416C1004BT ELECTRONICS CMOS D R A M 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1004BT 16Bit 1Mx16 71bm42 302tib C1204B tsop 3021 DIN 3021 STANDARD AA3021

    C1204B

    Abstract: No abstract text available
    Text: KM416V1004BT CMOS D R A M 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416V1004BT 16Bit 1Mx16 C1204B

    Untitled

    Abstract: No abstract text available
    Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0108B 64 CHANNEL SEGMENT DRIVER FOR DOT MATRIX LCD 100 QFP FUNCTION The KS0108B is a LCD driver LSI with 64 channel output for dot matrix liquid crystal graphic display system. This device consists o f the dispay RAM, 64 bit data latch 64 bit


    OCR Scan     		PDF KS0108B KS0108B DQ22GS1

    Untitled

    Abstract: No abstract text available
    Text: K S 5 7C 2016 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit CPU core. With an up-to-20-digit LCD direct drive capability and up to 40 pins for LCD segment data


    OCR Scan     		PDF KS57C2016 up-to-20-digit 16-bit 100-pin 002b3b4

    Untitled

    Abstract: No abstract text available
    Text: KM4 1 V 1 6 0 0 0 B S CMOS DRAM ELECTRONICS 16M x 1 Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF 16Mx1 KM41V16000BS GQ340flb

    Untitled

    Abstract: No abstract text available
    Text: K M 4 4 C 1 6 1 04 AS CMOS DRAM ELECTR O NICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 ,


    OCR Scan     		PDF 16Mx4 KM44C16104AS bM14E

    Untitled

    Abstract: No abstract text available
    Text: KMM366F203BK KMM366F213BK DRAM MODULE KMM366F203BK & KMM366F213BK EDO Mode without buffer 2Mx64 DRAM DIMM based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F20 1 3B is a 2M bit x 64 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM366F203BK KMM366F213BK KMM366F213BK 2Mx64 KMM366F20 cycles/64ms 366F20

    KA8601C

    Abstract: No abstract text available
    Text: KA8601C ELECTRONICS Telephone INTRODUCTION The KA8601C is a monolithic integrated circuit for use in high perfor­ mance speaker phone system. The KA860IC consists of speaker phone and speech network. Speaker phone includes attenuators, amplifiers, level detectors, attenuator


    OCR Scan     		PDF KA8601C KA8601C KA860IC 003D777 8601C 0-DIP-600B 48-SDf-600 KA8601C)

    Untitled

    Abstract: No abstract text available
    Text: KM48C514DT CMOS DRAM ELECTRONICS 512 K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF KM48C514DT 512Kx 512Kx8 BH0B90BRBRBHHH KM48C514DT)

    ks57c5016

    Abstract: 3.58MHZ crystal oscillator 0011B sequential timer working ks57c50
    Text: KS57C5016 ELECTRONICS Microcontroller »DESCRIPTION The KS57C5016 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With a DTMF generator, 8-bit serial I/O interface, and two 8-bit timer/counters, the KS57C5016 offers an excellent design


    OCR Scan     		PDF KS57C5016 KS57C5016 TCL01 KS57C5016) 71bm42 0D321Ã 3.58MHZ crystal oscillator 0011B sequential timer working ks57c50

    3UA52

    Abstract: No abstract text available
    Text: K M 4 4 C 1005 D T CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Extended Data Out Quad CAS CM OS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


    OCR Scan     		PDF KM44C1005DT 71b4m 3UA52

    BV06S

    Abstract: SFS9620 bta 600 RG18U
    Text: SFS9620 Advanced Power MOSFET FEATURES B V dss = -2 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 1 -5 ß ■ Lower Input Capacitance In = -3 .0 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -200V


    OCR Scan     		PDF SFS9620 -200V ib4142 GG400G3 BV06S SFS9620 bta 600 RG18U

    DRAM 18DIP

    Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
    Text: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its


    OCR Scan     		PDF KM41C1000CSL KM41C1000CSL-6 110ns KM41C1000CSL-7 130ns KM41C1000CSL-8 150ns 100fiA 100/A cycle/128ms DRAM 18DIP DRAM 256kx4