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    C48D

    Abstract: KM93C46 411E KM93C46I SC46
    Text: SAMSUNG ELECTRONICS INC b? E D 71b414S ODlbälb OST SMGK CMOS EEPROM KM93C46 1K Bit Sería! Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating temperature range — KM93C46: Commercial — KM93C46I: Industrial • Single 5 Volt supply • High performance advanced CMOS technology


    OCR Scan     		PDF 71b414S KM93C46 KM93C46: KM93C46I: 250/xA KM93C46 C48D 411E KM93C46I SC46

    TSOP 173 g

    Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
    Text: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8


    OCR Scan     		PDF KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP 71b4142 DD23bST TSOP 173 g KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000AL KM684000ALI KM684000ALI-L

    34S71

    Abstract: 005D C1005D
    Text: K M 4 4 C 1 005 DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


    OCR Scan     		PDF KM44C KM44C1005DJ 003427b 34S71 005D C1005D

    Untitled

    Abstract: No abstract text available
    Text: KS0093 26 COM / 80 SEG DRIVER & CONTROLLER FOR STN LCD MARCH. 1999. • 7 ^ 4 1 4 2 □□SA'na T71 i 26COM/8QSEG DRIVER & CONTROLLER FOR STN LCD KS0093 KS0093 Specification Revision History Content Version Date 0.0 Original 1998. 06 0.1 Miss typed contents changed


    OCR Scan     		PDF KS0093 26COM/8QSEG KS0093 71b4142

    Untitled

    Abstract: No abstract text available
    Text: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.


    OCR Scan     		PDF KS7306 KS7306 100-QFP-1414 25ZT1 03125Z VID-97-D004

    rbbb

    Abstract: No abstract text available
    Text: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416V254DJ 256Kx16 DQ0-DQ15 rbbb

    Untitled

    Abstract: No abstract text available
    Text: KS7212 TIMING & SYNC. GENERATOR FOR B/W CCD GENERAL DESCRIPTION The KS7212 is a CMOS integrated circuit designed for making various timing pulses for B/W CCD camera. FEATURES - Compatible with both EIA and CCIR mode EIA: KC73125(U -M, CCIR : KC73129(U)-M)


    OCR Scan     		PDF KS7212 KS7212 KC73125 KC73129 06992MHz, 93750MHz 48-QFP-0707 GG37fl4M

    Untitled

    Abstract: No abstract text available
    Text: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8


    OCR Scan     		PDF KM416C1204A/A-L/A-F KM416C1204A-6/A-L6/A-F6 110ns KM416C1204A-7/A-L7/A-F7 130ns KM416C1204A-8/A-L8/A-F8 150ns cycle/16m cycle/128msCLE 71b4142

    Untitled

    Abstract: No abstract text available
    Text: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM O S Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4 ,1 94 ,3 0 4 x 4 f i t Static C olum n M ode C M O S DRAM s. Static C olum n M ode offers high sp e e d random a cce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2 K Ref. o r 4 K R ef. , acce ss


    OCR Scan     		PDF KM44C4002A, KM44C4102A

    TCC15

    Abstract: No abstract text available
    Text: K M 4 8 S 2 0 2 1B T SDRAM ELECTR ONICS 1M x 8Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF KM48S2020B/KM48S2021B KM48S2021BT) 0G3337Ö TCC15

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC D5 KS54AHCT KS74AHCT 12 de| ? ^ bm4s o o o s ,i3t, s | t -1 Triple 3-lnpul NAND Gates with Opert-Drain Outputs FEATURES DESCRIPTION • Function, pln-out, speedand drive compatibility with 54I74ALS logic family • Low power consumption characteristic of CMOS


    OCR Scan     		PDF KS54AHCT KS74AHCT 71b414S 90-XO 14-Pin

    DC-361

    Abstract: No abstract text available
    Text: KMM372V213BK ELECTRONICS DRAM Module KMM372V213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification - KMM372V213BK 2048 cycles/Q2ms, SOJ - KMM372V213BS (2048 cycles/32ms, TSOP) • Fast Page Mode Operation


    OCR Scan     		PDF KMM372V213BK KMM372V213BK/BS 2Mx72 300mil 48pin 168-pin KMM372V213BS cycles/32ms, DC-361

    KM641003J-15

    Abstract: KM641003J-20
    Text: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10 mA(max.) Operating KM641003J-15 : 170 mA(max.) KM 641003J-17: 160 mA(max.)


    OCR Scan     		PDF KM641003 KM641003J-15 KM641003J-17 KM641003J-20: KM641003J 32-SOJ-4CK) KM641003 576-bit KM641003J-15 KM641003J-20

    Untitled

    Abstract: No abstract text available
    Text: KM44V1004DJ ELECTRO NICS CMOS D R A M 1 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44V1004DJ 16Mx4, 512Kx8) 7Th4142 D347c

    Untitled

    Abstract: No abstract text available
    Text: KMM372F803AK/AS KMM372F883AK/AS DRAM MODULE KMM372F803AK/AS & KMM372F883AK/AS Fast Page with EDO Mode 8Mx72 DRAM DIMM with ECC based on 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F80 8 3A is a 8M bit x 72 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM372F803AK/AS KMM372F883AK/AS KMM372F883AK/AS 8Mx72 KMM372F80 400mil KMM372F803AK KMM372F803AS

    wram samsung

    Abstract: 2W-25 OQ29
    Text: KM4232W259A Graphic Memo ry ELECTRONICS FEATURES DESCRIPTION • 1 M Byte Frame-Buffer on a single chip • 2.1 G Byte/Second Internal Bus: - Fast Window Drawing Operations - Fill at up to 2.1 G Byte/Second -Aligned BitBLT at up to 0.64 G Byte/Second • 8-Column Block W rite with Bit and Byte Masking


    OCR Scan     		PDF KM423 2W259A -15ns -83MHz 120-Pin KM4232W259A KM4232W259A 0Q312CH wram samsung 2W-25 OQ29

    30Q04

    Abstract: 37-c4 48 pin video ic chroma 175 ic mmi av converter rgb KS0119 KS0122 DD3002 AC290
    Text: PR E LIM IN A R Y INFORM ATIO N KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video form at to digitized component video. Output data can be selected for CCIR 601 or square pixel


    OCR Scan     		PDF KS0122 KS0122 100-QFP-1420C 71b4142 30Q04 37-c4 48 pin video ic chroma 175 ic mmi av converter rgb KS0119 DD3002 AC290

    Untitled

    Abstract: No abstract text available
    Text: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - E IA /C C IR S T A N D A R D S T IM IN G M O D E


    OCR Scan     		PDF KS7214 KS7214 71b4142 G03713Ã 48-QFP-0707

    Untitled

    Abstract: No abstract text available
    Text: SSP2N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology = 5.0 £2 ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 600V


    OCR Scan     		PDF SSP2N60A 00403M5 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: KMM332V203AJ/AT DRAM MODULE KMM332V203AJ/AT Fast Page Mode 2Mx32 DRAM DIMM Low Power, 4K Refresh , 3.3V GENERAL DESCRIPTION The Samsung KMM332V203A is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V203A consists of four CMOS 2Mx8bit DRAMs in 28-pin SOJ or TSOPII


    OCR Scan     		PDF KMM332V203AJ/AT KMM332V203AJ/AT 2Mx32 KMM332V203A 28-pin 72-pin

    KS88C8016

    Abstract: No abstract text available
    Text: KS88C8016 Microcontroller ELECTRONICS DESCRIPTION The KS88C8016 single-chip 8-bit microcontroller is fabricated using an advanced CMOS process. Important features include two 8-bit timer/counters, 16-bit and 20-bit timer/counter arrays with powerful data capture and


    OCR Scan     		PDF KS88C8016 KS88C8016 16-bit 20-bit 336-byte 16-Kbyte 7Tb4142 32bClfl

    Untitled

    Abstract: No abstract text available
    Text: KM29N32000RS Fl ash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512+16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte


    OCR Scan     		PDF KM29N32000RS 250us

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFZ24/20 FEATURES • • • • • • • TO-220 Lower R d s io n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF IRFZ24/20 O-220 IRFZ24 IRFZ20 71b414S

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTR ONI CS INC MMBT2484 42E D GH 7 ^ b 4 1 4 S 000=1035 T m SM GK NPN EPITAXIAL SILICON TRANSISTOR •> " T ' Z l - O C i LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF MMBT2484 71b414S D0lH03fe