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    SRAM timing

    Abstract: No abstract text available
    Text: SAMSUNG E L E C TRONICS INC b7E J> • 7TbmN2 0Ü177M2 KM79C86 ISfi M S I I S K CMOS SRAM 3 2 K x9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • Synchronous Operation The KM79C86 is a 294,912 bit S ynchronou s S tatic Ran­


    OCR Scan     		PDF KM79C86 32Kx9 44-Pin 912xx/ KM79C86 7Tb4142 DD177S1 SRAM timing

    Untitled

    Abstract: No abstract text available
    Text: KM48C8004AS CMOS DRAM ELECTR O NICS 8 M x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package


    OCR Scan     		PDF KM48C8004AS KM48C8004A 16Mx4, 512Kx8) 48C8004AS G03S50b 71L4142

    Untitled

    Abstract: No abstract text available
    Text: KS0093 26 COM / 80 SEG DRIVER & CONTROLLER FOR STN LCD MARCH. 1999. • 7 ^ 4 1 4 2 □□SA'na T71 i 26COM/8QSEG DRIVER & CONTROLLER FOR STN LCD KS0093 KS0093 Specification Revision History Content Version Date 0.0 Original 1998. 06 0.1 Miss typed contents changed


    OCR Scan     		PDF KS0093 26COM/8QSEG KS0093 71b4142

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual


    OCR Scan     		PDF KM424C257 125ns 28-PIN 0D13625

    Untitled

    Abstract: No abstract text available
    Text: KM75C01A CMOS FIFO First-in First-out FIFO 5 1 2 x 9 C M O S M em ory FEATURES DESCRIPTION • First-in, First-out dual po rt m em o ry - 5 1 2 x 9 organization • Very high speed independent o f de p th /w id th The KM75C01A is dual port m em ory that im plem ents


    OCR Scan     		PDF KM75C01A KM75C01A 71b414B

    Untitled

    Abstract: No abstract text available
    Text: K M 2 9 N 16 0 0 0 R Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000T/R is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass


    OCR Scan     		PDF KM29N16000T/R 264-byte 300/js KM29N16000R)

    sc 4145

    Abstract: KS0083 KS0084 1414a 142 142 1414a KS0103 KS0104 74148 PIN DIAGRAM pin diagram of 74148 SC-77
    Text: KS0083/84 CMOS DIGITAL INTEGRATED CIRCUIT 80-CHANNEL SEGMENT/COMMON DRIVER FOR DOT MATRIX LCD KS0083/&4 is a graphic type LCD driver LSI w frch is fabricated by CMOS process for high vo«age. In cas« of segment driver, can be setected 4 bit. 1 bit data transfer or chip select mode.


    OCR Scan     		PDF KS0083/84 80-CHANNEL KS0084 KS0083 KS0C83/ KS0103 KS0Q83/84; 60-QFP-U14A 64-QFP-1420D sc 4145 KS0083 1414a 142 142 1414a KS0104 74148 PIN DIAGRAM pin diagram of 74148 SC-77

    wram samsung

    Abstract: 2W-25 OQ29
    Text: KM4232W259A Graphic Memo ry ELECTRONICS FEATURES DESCRIPTION • 1 M Byte Frame-Buffer on a single chip • 2.1 G Byte/Second Internal Bus: - Fast Window Drawing Operations - Fill at up to 2.1 G Byte/Second -Aligned BitBLT at up to 0.64 G Byte/Second • 8-Column Block W rite with Bit and Byte Masking


    OCR Scan     		PDF KM423 2W259A -15ns -83MHz 120-Pin KM4232W259A KM4232W259A 0Q312CH wram samsung 2W-25 OQ29

    Untitled

    Abstract: No abstract text available
    Text: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - E IA /C C IR S T A N D A R D S T IM IN G M O D E


    OCR Scan     		PDF KS7214 KS7214 71b4142 G03713Ã 48-QFP-0707

    Untitled

    Abstract: No abstract text available
    Text: KM29N16000ER Flash ELECTRONICS 2Mx8Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register


    OCR Scan     		PDF KM29N16000ER KM29N16000ET/R 264-byte 500ps

    200A1

    Abstract: No abstract text available
    Text: IRLR/U014A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |iA Max. @ VDS = 60V Lower R DS(0N) : 0.122 Q (Typ.)


    OCR Scan     		PDF IRLR/U014A 71bmM2 7Tb414B 200A1

    Untitled

    Abstract: No abstract text available
    Text: KS57C2408 M icrocontroller ELECTRONICS DESCRIPTION The KS57C2408/2416 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With an up-to-12-digit LCD direct-drive capability, 8-bit x 6-channel A/D converter, and versatile 8-bit and 16-bit


    OCR Scan     		PDF KS57C2408 KS57C2408/2416 up-to-12-digit 16-bit 16-Bit KS57C2408) KS57C2416) 0011B;

    DRAM 18DIP

    Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
    Text: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its


    OCR Scan     		PDF KM41C1000CSL KM41C1000CSL-6 110ns KM41C1000CSL-7 130ns KM41C1000CSL-8 150ns 100fiA 100/A cycle/128ms DRAM 18DIP DRAM 256kx4

    Untitled

    Abstract: No abstract text available
    Text: KM48C2000A/AL/ALL/ASL CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: ' The Samsung KM48C200QA/AL/ALLVASL is a high speed CMOS 2,097,152 b it x 8 Dynamic Random Access Memory. Its design is optim ized for high


    OCR Scan     		PDF KM48C2000A/AL/ALL/ASL KM48C200QA/AL/ALLVASL KM48C2000A/AL/ALL/ASL-5 KM48C2000A/AIVALL/ASL-6 110ns KM48C2000A/AL/ALL/ASL-7 130ns KM48C2000A/AL/ALL/ASL-8 150ns

    KM48S2020bt

    Abstract: 48S2020 44-TS0P2 KM48S2020 48S20 km48s2020btg
    Text: KM48S2020BT SDRAM ELECTRONICS 1M x 8Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF KM48S2020BT KM48S2020B/KM48S2021B GG33353 44-TS0P2-400F 44-TSOP2-400R 0Q3b25& KM48S2020bt 48S2020 44-TS0P2 KM48S2020 48S20 km48s2020btg