P3Q22V10-7A
Abstract: P3Q22V10-7D P3Q22V10-7N Pal programming 22v10
Text: PHILIPS INT ERNATIONAL bSE J> m 711DflEb O D b i n S 3SR • P H I N Philip» Sem iconductors Low Voltage specification 3 Volt BiCMOS Versatile PAL P3Q22V10-7 DESCRIPTION FEATURES
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711DflEb
P3Q22V10â
P3Q22V10-7
100mA
24-Pin
P3Q22V10-7N
0410D
P3Q22V10-7A
0401F
P3Q22V10-7D
Pal programming 22v10
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MCD656
Abstract: LWE2025R
Text: T -3 S -0 5 LWE2025R / V PHILIPS INTERNATIONAL SbE D • 711DflEb DDMbSTb 3Sfl ■ P H I N MICROWAVE LINEAR POWER TRANSISTOR NPN silicon power transistor fo r use in a com m on-emitter, class-A am plifier up to 2.3 GHz in CW conditions in m ilitary and professional applications.
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-T-33-OS
LWE2025R
7110fl2b
FO-93)
MCD656
T-33-05
MCD656
LWE2025R
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TRANSISTOR BC 208
Abstract: transistor BC 568 AC/DC tig smps tig welding tig welding 100-P BUK442 BUK442-100A BUK442-100B
Text: PHILIPS INTERNATIONAL b5E D • 711DflEb aDb3T4b 223 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK442-100A/B
PINNING-SOT186
TRANSISTOR BC 208
transistor BC 568
AC/DC tig
smps tig welding
tig welding
100-P
BUK442
BUK442-100A
BUK442-100B
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lte4002s
Abstract: 005129 industrial linear ic
Text: D EVELO PM EN T DATA LTE4002S T h is data sheet c o n ta in s advance in fo rm a tio n and sp e cificatio n s are subject t o c hange w it h o u t notice. PHILIPS INTERNAT ION AL SbE ]> • 711DflEb 004b514 SIS PHIN M IC R O W A V E LINEAR PO W ER T R A N SIST O R
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LTE4002S
711DflSb
004bS14
lte4002s
005129
industrial linear ic
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TDA4722
Abstract: TDA4724 G1324 R2524
Text: INTEGRATED CIRCUITS TD A4722;TD A4724 SECAM-L chrominance processor for VHS recorders Preliminary specification File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS 711DflEb D D T B OB ? S37 PHILIPS Preliminary specification Philips Semiconductors
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TDA4722
A4724
711Dfl2b
DD7B037
TDA4722/TDA4724
TDA4722/24
007605D
TDA4724
G1324
R2524
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80C528
Abstract: TOP3 package 80C51 80C52 83C528 87C528 8XC528 sot307-22
Text: • 711DflEb 00bb3m TSfl ■ P H I N Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller DESCRIPTION The 8XC528 single-chip 8-bit microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51
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80C528/83C528
8XC528
80C51
80C51.
83C528
80C528
87C528
80C528
TOP3 package
80C52
83C528
87C528
sot307-22
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BYX42-300
Abstract: Byx42 600 Philips BYX42 BYX42/300 BYX42-300R the value of BYX42
Text: BYX42 SERIES PHILIPS INTERNATIONAL 5bE D • 711DflEb D O m b E b ODI ■ PHIN T-Ô t~/7 SILICON RECTIFIER DIODES Diffused silicon rectifier diodes in DO-4 metal envelopes, intended for power rectifier applications. The series consists of the following types:
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BYX42
BYX42-300
BYX42-300R
1200R.
10-32UNF
Byx42 600 Philips
BYX42/300
the value of BYX42
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TRANSISTOR K555
Abstract: BUK555-100A fet junction transistor BUK555-100B T0220AB K-5551
Text: PHILIPS INTERNATIONAL hSE ]> M 711DflEb 0Db424b fl44 • P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power
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711QflSb
K555-1OOA/B
T0220AB
BUKS55
-100A
-100B
Tj/C-150
-ID/100
TRANSISTOR K555
BUK555-100A
fet junction transistor
BUK555-100B
K-5551
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k443
Abstract: BUK443-100A BUK443-100B
Text: PHILIPS INTERNATIONAL bSE D E9 711DflEb □DbB'lSt. 172 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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K443-1OOA/B
buk443
-100a
-100b
-SOT186
k443
BUK443-100A
BUK443-100B
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BD204
Abstract: box78 BD202 BDX78 philips BDX77 BDX78 BD201 BD203 bd202 philips
Text: BD 202 BD204 BDX78 PHILIPS INTERNATIONAL 5LE D • 711DflEb 0D4EÔ1L. TIL BIPHIN T - J3 - Z - / SILICON EPITAXIAL-BASE PO W ER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Î or
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BD204
BDX78
711DflEb
BD201,
BD203,
BDX77
BD202
BD204
O-220.
box78
BDX78 philips
BDX78
BD201
BD203
bd202 philips
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BFQ24
Abstract: GHz PNP transistor BFQ22S
Text: Product specification Philips Semiconductors PNP 5 GHz wideband transistor PHILIPS INTERNATIONAL / "7 SbE D • 711DflEb 0045417 BFQ24 TTb ■ PHIN PINNING DESCRIPTION PNP transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
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BFQ24
711DflEb
DD45417
BFQ22S.
711002b
MEA371
BFQ24
GHz PNP transistor
BFQ22S
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RXB06150W
Abstract: FO-91 TRANSISTOR package erie capacitor ERIE ceramic capacitor variable capacitor
Text: Philips Sem iconductors Prelim inarjrspecification - i ^ NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 3 3 - / 5 ' 1 RXB06150W _ SbE D • 711DflEb D O H b S 45 ^2T FEATURES DESCRIPTION APPLICATIONS
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RXB06150W
FO-91B
FO-91
RXB06150W
FO-91 TRANSISTOR package
erie capacitor
ERIE ceramic capacitor
variable capacitor
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P80CLXXX
Abstract: PCF8570 PCF8570P PCF8570T pcfb570 pcf85701
Text: INTEGRATED CIRCUITS PCF8570 256 x 8-bit static low-voltage RAM with l2C-bus interface Preliminary specification File under Integrated Circuits, IC12 August 1994 Philips Semiconductors PHILIPS PHILIPS 711DflEb 007^703 Printed From CAPS XPert Version 1.2P ma
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PCF8570
711Dfi2b
110aBfc,
P80CLXXX
PCF8570P
PCF8570T
pcfb570
pcf85701
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transistor BC 568
Abstract: dgb3t 100-P BUK442 BUK442-100A BUK442-100B smps tig welding transistor BC 209
Text: PHILIPS INTERNATIONAL b5E D • 711DflEb a D b 3 T 4 b Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK442-100A/B
PINNING-SOT186
-ID/100
transistor BC 568
dgb3t
100-P
BUK442
BUK442-100A
BUK442-100B
smps tig welding
transistor BC 209
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application notes saa7165
Abstract: SAA7151B SAA7165 SAA7191 SAA7191B SAA9051 SAA9065
Text: Preliminary specification Philips Sem iconductors Video Products Video enhancement and D/A processor VEDA2 F EA TU R E S • C M O S circuit to e n h a n ce video d ata and to convert lum in ance and colour-difference sig n a ls from digital-to-analog • Digital colour transient improvement
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SAA7165
SAA7165
SAA9065.
16-bit
12C-bus
711002t.
application notes saa7165
SAA7151B
SAA7191
SAA7191B
SAA9051
SAA9065
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amplifier blw96
Abstract: BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414
Text: PHILIPS INTERNATIONAL LSE D C3 711DÛ5L QDbBMlE 33b BLW96 PHIN H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated high power industrial and m ilitary transmitting equipm ent in the h.f. and v.h.f. band. The transistor presents
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BLW96
7110fl2b
DDb3453
amplifier blw96
BLW96 HF power amplifier
PR37 RESISTOR
BLW96
philips blw96
PHILIPS 4312 amplifier
PR37
RESISTOR pr37
PHILIPS capacitors 0.1 mf
A03414
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SAB 8048 P 220 SM 590
Abstract: MAA 723 MADE S18B micro controller based cfl Inverter soc 512a d74c 4X16 lcd 1514c 8 lcd digit counter s1bc
Text: PCF84C633A J V_ SINGLE-CHIP 8-BIT MICROCONTROLLER WITH LCD DRIVERS, DERIVATIVE PORT, TIMER/CAPTURE AND TIMER/COUNTER DESCRIPTION IMPORTANT The PCF84C633A is a microcontroller with 20 on-chip liquid crystal display LCD outputs. These can be configured for
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PCF84C633A
PCF84C633A
PCF84CXX
16-bit
7Z24606
711002b
007412b
SAB 8048 P 220 SM 590
MAA 723
MADE S18B
micro controller based cfl Inverter
soc 512a
d74c
4X16 lcd
1514c
8 lcd digit counter
s1bc
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87CS2
Abstract: 8052 microcontroller philips kje t2 80C32 Philips P80C32 P80C52EBA P87C52GFFFA KJe ro 80C51 80C52
Text: SbE ]> PHILIPS INTERNATIONAL m 711QöSb 003Ö7ÖÖ 775 » P H I N Product specincation Philips Semiconductors Microcontroller Products 80C32/80C52/87C52 CMOS single-chip 8-bit microcontroller T FEATURES • 80C51 based architecture In addition, the 8XC52 has two software
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80C32/80C52/87C52
80C32/80C52/87C52
8XC52
80C52)
87C52)
16-bit
48tcuCL
48tCLCL
87CS2
8052 microcontroller philips
kje t2
80C32 Philips
P80C32
P80C52EBA
P87C52GFFFA
KJe ro
80C51
80C52
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J027
Abstract: 16.8Mhz oscillator 4N24 80C51 83C751 87C751 8XC751 S87C751-1F24 S87C751-2F24 S87C751-4F24
Text: • 7 1 1 0 8 2 b QObbflSl 4fil ■ PHIN philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller PIN CONFIGURATIONS DESCRIPTION FEATURES The Philips 83C751/87C751 offers the advantages of the 80C51 architecture in a
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711082b
83C751/87C751
83C751/87C751
80C51
8XC751
83C751)
87C751)
16-bit
J027
16.8Mhz oscillator
4N24
83C751
87C751
S87C751-1F24
S87C751-2F24
S87C751-4F24
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LED Drive smps circuit diagram
Abstract: TEA1101 NTC resistor T24 120 VAC to DC smps circuit diagram 7 pin dil smps power control ic APPLICATION NOTES OF SMPS CHARGERS 15A POWER TRANSISTOR FOR SMPS 7 pin SMPS LED monitor circuit diagram SMPS CIRCUIT DIAGRAM
Text: Preliminary specification Philips Semiconductors Integrated Circuits Battery monitor for NiCd and NiMH chargers FEATU RES • Accurate detection of fully charged batteries by currentless - d V sensing • Digital filtering of the battery voltage to avoid false - d V
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711032b
TEA1101
TEA1101T
711005b
LED Drive smps circuit diagram
TEA1101
NTC resistor T24
120 VAC to DC smps circuit diagram
7 pin dil smps power control ic
APPLICATION NOTES OF SMPS CHARGERS
15A POWER TRANSISTOR FOR SMPS
7 pin SMPS
LED monitor circuit diagram
SMPS CIRCUIT DIAGRAM
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transistor fp 1016
Abstract: BFQ34T ON4497 transistor 1548 b FP 801 QS 100 NPN Transistor npn transistor dc 558 transistor 828 "NPN Transistor" d 772 transistor
Text: Product specification P hilips Sem iconductors -T-33-QS NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL BFQ34T SbE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The device features high output voltage
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-T-33-QS
BFQ34T
ON4497)
4545fl
gain500
transistor fp 1016
BFQ34T
ON4497
transistor 1548 b
FP 801
QS 100 NPN Transistor
npn transistor dc 558
transistor 828
"NPN Transistor"
d 772 transistor
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LTN221R-10
Abstract: LTN221 GQS7134 LCD LM 234 bf 233 DDS713S LTN221F-10 LXL221 GS713
Text: bOE D PHILIPS INTERNATIONAL PhilipsComponents • 711QÖ2b QG57132 142 'n ^ /-3 cr LTN221 Data sheet status Product specification date o f issue July 1990 Liquid crystal display MODULE DESCRIPTION QUICK REFERENCE DATA The LTN221 is a 5 x 7 dot, 20-character, 2-line dot matrix
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QG57132
LTN221
LTN221
20-character,
711Dflab
LTN221R-10
GQS7134
LCD LM 234
bf 233
DDS713S
LTN221F-10
LXL221
GS713
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DL 711 PHILIPS
Abstract: philips dl 711 LTN211R-10 DISPLAY LTN211R philips ltn211r philips dl 711 delay LTN211R-50 LTN211F-10 LTN211 LXL211-G
Text: PHILIPS INTERNATIONAL bDE D • 7110fi5b 0D5715E 5T3 ■ PHIN Philips C o m p o nents LTN211 Data sheet status Product specification date of issue July 1990 Liquid crystal display QUICK REFERENCE DATA MODULE DESCRIPTION The LTN211 is a 5 x 7 dot, 16-character, 2-line dot matrix
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7110fi5b
0D5715E
LTN211
LTN211
16-character,
711DA2b
110A2b
QQS7131
DL 711 PHILIPS
philips dl 711
LTN211R-10
DISPLAY LTN211R
philips ltn211r
philips dl 711 delay
LTN211R-50
LTN211F-10
LXL211-G
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LP2S
Abstract: BUK545-50A 40608G
Text: - r - 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-50A/B BUK575-60A/B PowerMOS transistor Logic level FET SbE » PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode
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BUK575-60A/B
BUK545-50A/B
711Dfl2b
DG44724
BUK575
LP2S
BUK545-50A
40608G
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