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    711DF Search Results

    711DF Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    ISOM8711DFFR Texas Instruments DC input, open-collector output, single-channel high-speed opto-emulator 5-SOIC -40 to 125 Visit Texas Instruments
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    711DF Price and Stock

    Texas Instruments ISOM8711DFFR

    DC INPUT, OPEN-COLLECTOR OUTPUT,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ISOM8711DFFR Digi-Reel 1,738 1
    • 1 $0.97
    • 10 $0.671
    • 100 $0.5146
    • 1000 $0.43227
    • 10000 $0.43227
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    ISOM8711DFFR Cut Tape 1,738 1
    • 1 $0.97
    • 10 $0.671
    • 100 $0.5146
    • 1000 $0.43227
    • 10000 $0.43227
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    ISOM8711DFFR Reel 2,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.3891
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    Mouser Electronics ISOM8711DFFR 1,548
    • 1 $0.95
    • 10 $0.597
    • 100 $0.476
    • 1000 $0.425
    • 10000 $0.369
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    Norgren VS26S711DF213A

    Valve, softseal 5/3 Sol/Sol Coe Ctr, Push/Turn Over |Norgren VS26S711DF213A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark VS26S711DF213A Bulk 1
    • 1 $217.46
    • 10 $201.93
    • 100 $179.22
    • 1000 $179.22
    • 10000 $179.22
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    Norgren VS18G711DF318A

    Valve, 5/3 sol/sol COE, int pilot, 29-145PSI, 115VAC, push only override | Norgren VS18G711DF318A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS VS18G711DF318A Bulk 5 1
    • 1 $249.47
    • 10 $249.47
    • 100 $249.47
    • 1000 $249.47
    • 10000 $249.47
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    Norgren VS26S711DF313A

    Double Solenoid Valve, 24VDC, 5/3, Center Open Exhaust, VS26 Series | Norgren VS26S711DF313A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS VS26S711DF313A Bulk 1 3 Weeks 1
    • 1 $192.23
    • 10 $192.23
    • 100 $192.23
    • 1000 $192.23
    • 10000 $192.23
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    Norgren VS18S711DF313A

    VALVE, DBL SOL, 24VDC, 5/3, COE, NON-LOCK, 145PSI, VS18 SERIES | Norgren VS18S711DF313A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS VS18S711DF313A Bulk 1 2 Weeks 1
    • 1 $167.16
    • 10 $167.16
    • 100 $167.16
    • 1000 $167.16
    • 10000 $167.16
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    Find more 711DF price and stock on Findchips.com

    711DF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bgjg

    Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
    Text: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control


    OCR Scan     		PDF -0ciBLF542 0D43TS4 OT171 PINNING-SOT171 MBA931 MRA971 bgjg transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909

    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B

    X3A-BFT93

    Abstract: BFQ23 philips bfq23 BFQ24 BFT93
    Text: "P3M ÌO PNP 5 GHz wideband transistor crystal P h ilip s S e m icon d u ctors PHILIPS INTERNATIONAL X3A-BFT93 711DfiSb OOMblCH T7M SbE ]> DESCRIPTION P rod u ct sp ecification M E C H A N IC A L DATA PN P crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole


    OCR Scan     		PDF X3A-BFT93 BFQ23 BFQ24 BFT93 X3A-BFT93 URV-3-5-52/733 BFQ23 philips bfq23 BFQ24 BFT93

    BUK543

    Abstract: BUK543-60A BUK543-60B TTA10
    Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack


    OCR Scan     		PDF BUK543-60A/B -SOT186 BUK543 DS10NÃ BUK543-60A BUK543-60B TTA10

    D441

    Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437
    Text: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector


    OCR Scan     		PDF BD433/435/437/439/441 O-126 BD434, BD436, BD438, BD440 BD442 711DflSb BD433 D441 BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437

    MCL T1-1

    Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
    Text: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM


    OCR Scan     		PDF 711002b G0114SS PCF84C121 PCF84C121. PCF84C121 PCF84C12. 7110fl2b MCL T1-1 MAB8048 PCF84C12 PCF84C121P PCF84C121T S020

    m3303

    Abstract: 10a ultra fast diode M3306 BYR34 BYR34-500 M3299
    Text: SbE D • 711DflSb DDmSSfl IPHIN T'lfl DEVELOPMENT DATA T h is d a ta she e t c o n ta in s BYR34 SERIES advance in fo r m a t io n and s p e c ific a tio n s are s u b je c t to ch a n g e w it h o u t n o tic e . PHILIPS INTER N A T I O N A L ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES


    OCR Scan     		PDF 711DflSb BYR34 T-03-/7 711002b T-03-17 m3303 10a ultra fast diode M3306 BYR34-500 M3299

    IL 741

    Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
    Text: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In


    OCR Scan     		PDF 711Dfl5t, BUK441-100A/B BUK441 -100A -100B -SOT186 IL 741 philips lps 100 BUK441-100A BUK441-100B P101

    P3Q22V10-7A

    Abstract: P3Q22V10-7D P3Q22V10-7N Pal programming 22v10
    Text: PHILIPS INT ERNATIONAL bSE J> m 711DflEb O D b i n S 3SR • P H I N Philip» Sem iconductors Low Voltage specification 3 Volt BiCMOS Versatile PAL P3Q22V10-7 DESCRIPTION FEATURES


    OCR Scan     		PDF 711DflEb P3Q22V10â P3Q22V10-7 100mA 24-Pin P3Q22V10-7N 0410D P3Q22V10-7A 0401F P3Q22V10-7D Pal programming 22v10

    J108

    Abstract: J109 J110 PZFJ108 PZFJ109 PZFJ110
    Text: • 711Dfl2b OObflOMa 414 IPHIN Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections • Low R d s o ii at zero gate voltage (< 8 £i for PZFJ 108)


    OCR Scan     		PDF 711Dfl2b PZFJ108/PZFJ109/PZFJ110 PZFJ108) -SOT223 OT223 MBB114 PZFJ109) PZFJ110) 711082b J108 J109 J110 PZFJ108 PZFJ109 PZFJ110

    THYRISTOR ts 602

    Abstract: BYX30-200R BYX31 BYX30 BYX30-600R BYX30-200 INVERTER 50 kW BYX30-600 IEC134 DM51
    Text: BYX30 SERIES T - 0 3 - 1 7 PHILIPS INTERNATIONAL SbE D • 711DfiEh 0041b04 440 « P H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 D iffu sed s ilic o n d io d e s in D O -4 m e ta l e n v e lo p e s , c a p a b le o f a b s o r b in g tr a n s i e n t s .


    OCR Scan     		PDF BYX30 T-03-Ã 711DfiSh 0041b04 BS9333-F002 BYX30-200 BYX30-600 BYX30-200R BYX30-600R. Non-repetiti10^ THYRISTOR ts 602 BYX31 BYX30-600R INVERTER 50 kW BYX30-600 IEC134 DM51

    BU603

    Abstract: USA060-1
    Text: 11 PHILIPS INTERNATIONAL 4SE D B 711Dfi2ti ODBOflfl'i 1 Œ P H I N BU603 T'33-/3 — SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope intended fo r use in power supplies and deflection circuits fo r colour receivers and monitors.


    OCR Scan     		PDF 711002t BU603 T-33-/3 O-220 F33M3 T-33-13 BU603 USA060-1

    RZB12250Y

    Abstract: No abstract text available
    Text: / " 3 3 - ! j £ RZB12250Y M AIN TEN AN C E TYPE PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMbblb 7 n ■PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications.


    OCR Scan     		PDF RZB12250Y FO-57C. RZB12250Y

    BTW42-600R

    Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
    Text: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase


    OCR Scan     		PDF DDbS43i BTW42 BTW42â 1000R. 1000r BTW38 BTW42-600R TSM 1250 1000R mml 600 600R BTW42-600RC

    International Power Sources

    Abstract: LWE2025R
    Text: T -3 3 -0 5 LWE2025R / \ PHILIPS INTERNATIONAL 5bE D • 711Dfl5b DDMbSTfc. 35fl BiPHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon p ow er tra n sisto r fo r use in a co m m o n -e m itte r,cla ss-A a m p lifie r up to 2.3 G H z in CW c o n d itio n s in m ilita ry and professional applications.


    OCR Scan     		PDF 33-OS LWE2025R 7110fl5b FO-93) MCD656 T-33-05 International Power Sources LWE2025R

    k 246 transistor fet

    Abstract: 100-P BUK571 BUK571-60A BUK571-60B K571 1e43
    Text: PHILIPS INTERNATIONAL 5fc,E D Philips Components • 711Dfi2b 324 ■ PHIN Data sheet B status Preliminary specification date of issue March 1991 Replaces BUK541-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		PDF BUK541-60A/B BUK571-60A/B BUK571 k 246 transistor fet 100-P BUK571-60A BUK571-60B K571 1e43

    74ABT2952

    Abstract: 74ABT2952D 74ABT2952DB 74ABT2952N 74ABT2952PW
    Text: INTEGRATED CIRCUITS 74ABT2952 Octal registered transceiver 3-State Product specification 1995 Feb 16 IC23 Data Handbook Philips Semiconductors PHILIPS • 711DflSb □□flbcIS7 b û 7 ■ This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors


    OCR Scan     		PDF 74ABT2952 711DflSb 64mA/-32mA 500mA 74ABT TSSOP24: OT355-1 MSA401 74ABT2952 74ABT2952D 74ABT2952DB 74ABT2952N 74ABT2952PW

    SCN26562

    Abstract: SCN26562C4A52 SCN26562C4N48
    Text: INTEGRATED CIRCUITS SCN26562 Dual universal serial communications controller DUSCC Product specification 1995 May 1 IC19 Philips Semiconductors PHILIPS PHILIPS 711DflSb ôbT Philips Semiconductors Product specification Dual universal serial communications controller (DUSCC)


    OCR Scan     		PDF SCN26562 711Gfl2b SCN26562 sot238-3 mo-047ad 711005b SCN26562C4A52 SCN26562C4N48

    Untitled

    Abstract: No abstract text available
    Text: “~T:L3 3 r~ l 5 RX3034B70W D E V EL O P M EN T DATA T h is data sheet c o n ta in s .advance in fo rm a tio n and sp e cific a tio n s are su b ject to cha nge w it h o u t notice. PHILIPS i n t e r n a t i o n a l S b E ]> • 711Dfl2b O O t4fciS3ti b2fc, « P H I N


    OCR Scan     		PDF RX3034B70W 711Dfl2b 711Dfl2b

    T0220AB

    Abstract: ScansUX66
    Text: PHILIPS INTERNATIONAL 41E ]> P 711Dfl2ti G'QEmfl? £ ggPHIN r - 2 3 '0 7 _ Philips Com ponents BWS2E-100/150/200 Data sheet status Preliminary specification date o f issue January 1991 GENERAL DESCRIPTION Glass passivated, high efficiency, rugged dual epitaxial rectifier


    OCR Scan     		PDF -f-23-07_ 0024nS BYV32E-100/150/200 T0220AB; T0220 T0220AB ScansUX66

    BUK102-50GL

    Abstract: IEC134 T0220AB AAB3 buk102-500l
    Text: PHILIPS I N T E R N A T I O NA L tSE D • 711Dfl2b D0b3fl25 blfi « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK102-50GL Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and


    OCR Scan     		PDF 7110A2b D0b3fl25 BUK102-50GL ll3/lls25t IEC134 T0220AB AAB3 buk102-500l

    BYW96D

    Abstract: diodes byw96d BYW96E ScansUX69
    Text: 711DfiSb 0 0 4 0 7 1 7 0=12 H P H I N 5bE D PHILIPS INT E RN A TI ONA L SbE D _ BYW96D BYW96E _ T - 0 3 - ÍS AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan rectifiers,


    OCR Scan     		PDF DD4D717 BYW96D BYW96E diodes byw96d ScansUX69

    Untitled

    Abstract: No abstract text available
    Text: 711DfiEb D D b T ì S ? SS2 « P H I N PXTA77 A_ _ _ _ _ SMALL-SIGNAL DARLINGTON TRANSISTOR PNP small-signal d a rlin g to n transistors, housed in a m icro m in ia tu re envelope SO T89 . T he com p le m e n tary ty p e is the P X T A 2 7 . QUICK REFERENCE DATA


    OCR Scan     		PDF 711DfiEb PXTA77

    Untitled

    Abstract: No abstract text available
    Text: 711Dfi2b D D b ' m i 710 • PHIN PZTA92 PZTA93 SILICON EPITAXIAL TRANSISTORS PNP transistors in a microminiature SMD envelope SOT-223 . They are primarily intended for use in telephony and professional communication equipment. QUICK REFERENCE DATA Collector-base voltage (open emitter)


    OCR Scan     		PDF 711Dfi2b PZTA92 PZTA93 OT-223)