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    7110F Search Results

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    7110F Price and Stock

    Siemens 3RV27110FD10

    TMCB UL489 S00 0.5A SCREW
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    DigiKey 3RV27110FD10 Box 1
    • 1 $406.07
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    Mouser Electronics 3RV27110FD10
    • 1 $399.55
    • 10 $369.66
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    RS 3RV27110FD10 Bulk 3 1
    • 1 $422.31
    • 10 $401.2
    • 100 $380.08
    • 1000 $380.08
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    Infineon Technologies AG TDA7110FHTMA1

    RF TX IC ASK 433-435MHZ 10TFSOP
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    DigiKey TDA7110FHTMA1 Digi-Reel 1
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    Avnet Americas TDA7110FHTMA1 Reel 4 Weeks 364
    • 1 $1
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    TDA7110FHTMA1 Reel 5,000
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    Newark TDA7110FHTMA1 Cut Tape 1
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    Rochester Electronics TDA7110FHTMA1 124,728 1
    • 1 $1
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    • 100 $0.9418
    • 1000 $0.8516
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    Win Source Electronics TDA7110FHTMA1 21,000
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    • 100 $1.508
    • 1000 $1.225
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    Toshiba America Electronic Components TB7110F(TE12L,Q)

    IC REG BUCK ADJ DL 8SOP-ADV
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    DigiKey TB7110F(TE12L,Q) Reel
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    Infineon Technologies AG TDA7110F

    ASK/FSK Transmitter 10-Pin TSSOP T/R - Tape and Reel (Alt: TDA7110F)
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    Rochester Electronics TDA7110F 18 1
    • 1 $0.525
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    • 100 $0.4935
    • 1000 $0.4463
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    Win Source Electronics TDA7110F 31,200
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    • 100 $1.508
    • 1000 $1.225
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    Samtec Inc HW-22-10-S-D-497-110-.FX

    Conn Board Stacker HDR 44 POS 12.62mm Stack Height 2.54mm Solder ST Through Hole - Bulk (Alt: HW-22-10-S-D-497-1)
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    Master Electronics HW-22-10-S-D-497-110-.FX
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    Sager HW-22-10-S-D-497-110-.FX
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    7110F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


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    PDF BDT65F; BDT65AF BDT65BF; BDT65CF 7110flSb BDT65F

    TDA8709

    Abstract: IEC134 S028 TDA8709T fdk id
    Text: Philips Semiconductors Product specification T -1 7 -0 7 -1 3 Video analog input interface TDA8709 PHILIPS INTERNATIONAL SbE D 7110fi2b 0 0 3 7 C H 3 FEATURES APPLICATIONS • 8-bit resolution • Video signal processing • Sampling rate up to 30 MHz • Digital picture processing


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    PDF T-77-07-IZ TDA8709 7110fl2b 0037DT3 TDA8709 711Qfl5b D03710b IEC134 S028 TDA8709T fdk id

    AB marking code diode

    Abstract: BFR101B BFR101A
    Text: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated


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    PDF BFR101A BFR101B BFRT01B AB marking code diode BFR101B

    BT153

    Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
    Text: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,


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    PDF 7110fl2t, T0-220AB T0-220AB. BT153 TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062

    MCD288

    Abstract: The Diode with Package Outlines 1993 SOT96A 1545A pulse to sinewave convertor DDSS431 TDA1545A TDA1545AT
    Text: PHILIPS INTERNATIONAL bOE D • 7110fl2b D O S S ^ S 51b « P H I N 'T ' Philips Preliminary specification Stereo continuous calibration DAC TDA1545A FEATURES GENERAL DESCRIPTION • Space saving package S08 or DIL8


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    PDF 711Dfl2b 16-bit MCD288 The Diode with Package Outlines 1993 SOT96A 1545A pulse to sinewave convertor DDSS431 TDA1545A TDA1545AT

    BUK10B-50US

    Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
    Text: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic


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    PDF 7110fl2b BUK106-50L7S BUK106-50LP/SP BUK106-50L/S BUK106-50I7S BUK10B-50US philips ldh d6506 BUK106-50L BUK106-50S buk106

    ltd133

    Abstract: 7 segments display philips LTD133F-21 12 pin 7 segment clock Liquid Crystal 12 pin 4 digit 7 segment display
    Text: PHILIPS INTERNATIONAL Data sheet status Product specification date of issue July 1990 . bOE 7110flSb 0 D 5 7 0 2 5 7' 4 LTD133 Ü51 IPHIN /S t Liquid crystal display DEVICE DESCRIPTION The LTD133 is a 3 1/2-digit 7 segment clock display with AM and PM functions. It is designed for use with the


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    PDF LTD133 7110flSb 0D57025 LTD133 PCF1175 7Z22271 LTD133F-21 LTD133F-21 7 segments display philips 12 pin 7 segment clock Liquid Crystal 12 pin 4 digit 7 segment display

    BUK426-100B

    Abstract: transistor BU 110 BUK426-100A
    Text: Philips Components Data sheet status Product specification date of issue March 1991 PHILIPS 7 - 3 ^ -/ / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode


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    PDF BUK426-1OOA/B 7110fl2t D0441EG OT199 -100A -100B BUK426-100B transistor BU 110 BUK426-100A

    NDS 40-20

    Abstract: BUK437-500B DIODE BB2
    Text: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF 711002b BUK437-500B NDS 40-20 BUK437-500B DIODE BB2

    25CC

    Abstract: AM2952 MB2052 MB2052B
    Text: T -5 2 ~ 3 -£ S Philips Semiconductors Advanced BiCMOS Products Objective specification Dual octal registered transceiver 3-State PHILIPS INTERNATIONAL FEATURES • StE D • 7110fl2fc. □03clclll 7S3 H P H I N QUICK REFERENCE DATA CONDITIONS T«ni> = 25CC; GND = 0V


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    PDF 16-bit AM2952 500mA MB2052 25CC MB2052B

    transistor 603 47e

    Abstract: BTB 600 BR BLV103 71009 SB
    Text: Philips Semiconductors 7110f l 5b D Q b B ll^ T 4fl ^ B P H IN Product specification UHF power transistor BLV103 bS E T> PHILIPS INTERNATIONAL FEATU RES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for


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    PDF 71IDA5b 00b31I^ BLV103 OT171 MSA45Ã MRA360 transistor 603 47e BTB 600 BR BLV103 71009 SB

    tam s8

    Abstract: C101 LTA343F-11 LTA343R-11
    Text: PHILIPS INTERNATIONAL Data sheet status Pro du ct specification date of issue J u ly 1990 bOE D I 7110flSb 0 0 5 7 G 1 3 30T LTA343 Liquid Crystal Display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTA343 is a 40-character, 2-line dot matrix display. Typical applications include hand held equipment and


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    PDF LTA343 7110flSb 0057G13 LTA343 40-character, 160x27 7110a2b tam s8 C101 LTA343F-11 LTA343R-11

    transistor tt 2222

    Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
    Text: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and


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    PDF 711002b BLY87C transistor tt 2222 Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060

    SL 100 NPN Transistor

    Abstract: blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor
    Text: PHILIPS INTERNATIONAL bSE D B 7110fl5Li DOLEb71 0 4^1 • PHIN BLT91/SL _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band.


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    PDF 00L2b71 BLT91/SL OT-172D) 7110fl2b D0bSb77 SL 100 NPN Transistor blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor

    b57 diode

    Abstract: M3245 M3244 diode 1123 07s BR211 BR211-100 M3243 BI 1123 M324
    Text: 5bE D • 7110flSb 0G410 bD ÛÔ4 D E V E LO P M E N T DATA IPHIN T -M -2 L 3 - BR211 SERIES T h is data sheet contains advance Inform ation and specifications are subject to change w ith o u t notice. PHILIPS 5bE D ^ INTERN A T I O N A L UN BREAKOVER DIODES


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    PDF 7110flSb 0G410bD BR211 BR211-100 b57 diode M3245 M3244 diode 1123 07s M3243 BI 1123 M324

    MRB11040W

    Abstract: QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity
    Text: 33'/3 Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor P H IL IP S MRB11040W 7110fi2Li 004b32M 0M2 M P H I N SbE D INTERNATIONAL FEATURES DESCRIPTION APPLICATIONS • Input prematching cell allows an


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    PDF FO-67 MRB11040W 0G4b32M T-33-13 711002b 0D4b32fl MRB11040W QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity

    vexta

    Abstract: TI TV multi band tuner IC Divider QFP44 SDIP42 TDA8742 TDA8742H 0.1 mKF capacitor
    Text: INTEGRATED CIRCUITS & S M U T TDA8742; TDA8742H Satellite sound circuit with noise reduction Product specification Supersedes data of November 1992 File under Integrated Circuits, IC02 October 1994 Philips Semiconductors PHILIPS PHILIPS 7110fl2fc. 0 0 7 6 1 3 4


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    PDF TDA8742; TDA8742H 7110fl2fci Q07fll34 7110fl2b vexta TI TV multi band tuner IC Divider QFP44 SDIP42 TDA8742 TDA8742H 0.1 mKF capacitor

    BUK452-100B

    Abstract: BUK452-100A T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF 7110fl2b BUK452-100A/B T0220AB BUK452-100B BUK452-100A T0220AB

    LHi 874

    Abstract: LHi 888 sp1191 HP611 SAA7194 APER XD7 video scaler SAA7186 SAA7191B VR06
    Text: INTEGRATED CIRCUITS DATA SHEET S A A 7 1 9 4 Digital video decoder and scaler circuit DESC Product specification Philips Semiconductors April 1994 I ««y « f f PHILIPS This_Material Copyriqhted By Its Respective Manuf actjixer • 7110fldb aG7*H04 lib ■


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    PDF SAA7194 007clcà LHi 874 LHi 888 sp1191 HP611 SAA7194 APER XD7 video scaler SAA7186 SAA7191B VR06

    RZ2731B60W

    Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw
    Text: • 3 3 - 1 3 RZ2731B60W PHILIPS INTERNATIONAL SbE D 7110fl2ti 004Li57ö OflS M P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.


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    PDF RZ2731B60W 711002b 004b5Ã RZ2731B60W tRANSISTOR 2.7 3.1 3.5 GHZ cw

    MX0912B250Y

    Abstract: 33-AS IEC134 015 capacitor philips
    Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high


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    PDF 33-AS" MX0912B250Y G04b34b T-33-Ã 711Dfl2b 004b352 0QMb43? MX0912B250Y 33-AS IEC134 015 capacitor philips

    TRANSISTOR BO 344

    Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF 7110flSb BUK455-100A/B T0220AB BUK455 -100A -100B TRANSISTOR BO 344 TRANSISTOR BO 341 tny 175 BUK455-100A BUK455-100B data transistor 1650

    BLX13

    Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
    Text: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested


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    PDF 711005t. BLX13 r-33-// BLX13 BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971

    SOT227B package

    Abstract: mb 428 mb 428 ic data ESM4045A ESM4045D SOT227A 4045D
    Text: PHILIPS INTERNATIONAL 45E ]> 7110fl2ti 0031233 T M P HIN ESM4045A V ESM4045D(V) T '- 3 3 - d Q SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).


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    PDF 711082b ESM4045A lESM4045D 4045D ICsat/50 Bon11 Csat/50; 711002b SOT227B package mb 428 mb 428 ic data ESM4045D SOT227A