2222 kn a
Abstract: 175B BLF277 c17f
Text: Philips Semiconductors Product specification T -3 1 -tS VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES SbE D • BLF277 711002t. GÜHBÖbb 334 ■ PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability
|
OCR Scan
|
T-37-Ã
BLF277
711002b
OT119
2222 kn a
175B
BLF277
c17f
|
PDF
|
M2404
Abstract: BT138F triac 134 M3403 triac bt138f
Text: PHILIPS INTERNATIONAL bSE ]> • 711002t. 0 ü b 2 2 R 5 J bS'i « P H I N BT138F SERIES FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SO T-186 envelopes, w h ic h fe a tu re an e le c tric a lly isolated m o u n tin g base. T h e y are intended f o r use in applica tio ns req u irin g high b id ire c tio n a l tra n sie n t and b lo ckin g
|
OCR Scan
|
711002b
L22R5
BT138F
OT-186
BT138F-
M2404
triac 134
M3403
triac bt138f
|
PDF
|
PZT2907
Abstract: PZT2907A
Text: 711002t. DDbTTbS IPHIN PZT2907 PZT2907A SILICON PLANAR EPITAXIAL TRANSISTORS PNP m edium pow er transistors in a m icro m in ia tu re SMD envelope SO T-223 . Designed p rim a rily fo r high-speed sw itching and d rive r applications. ~ v CB0 m ax. 60 V 40 V
|
OCR Scan
|
711002t.
PZT2907
PZT2907A
OT-223)
PZT2907A
|
PDF
|
TIP135
Abstract: TIP136 TA76 TIP130 TIP131 TIP132 TIP137
Text: TIP135 TIP136 TIP137 PHILIPS INTERNATIONAL SbE D • 711002t. 00L<35aa Tbl T -3 3 ■ P H IN 3 I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general am plifier and switching applications. TO-220AB plastic envelope. N-P-N equivalents are TIP130
|
OCR Scan
|
TIP135
TIP136
TIP137
7110fleti
O-220AB
TIP130
TIP131
TIP132.
tip136
TA76
TIP132
TIP137
|
PDF
|
BF994S marking code
Abstract: BF994S MOSFET Tetrode
Text: J PHILIPS INTERNATIONAL SbE D BF994S 711002t. 0 0 3 4 0 7 b T1S • PHIN FOR D E T A IL E D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR D ATASHEET T -? jr-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in aplasticSOT143 m icrom iniature envelope w ith source and
|
OCR Scan
|
BF994S
711002b
00341117b
OT143
BF994S marking code
BF994S
MOSFET Tetrode
|
PDF
|
BT153
Abstract: Thyristor TAG TI-1153 TAG thyristor TI1153 thyristor TAG 13 philips thyristor 239
Text: PHILIPS INTERNATIONAL SflE ]> • 711002t. 00S3Q35 301 * P H I N Bl 1b3 y v._ FAST TURN-OFF THYRISTOR Glass-passivated fast-turn-off thyristor in a T 0-220A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable fo r use in regulator,
|
OCR Scan
|
711002t.
00S3Q35
T0-220AB.
711Dfl2ti
BT153
7Z82059
BT153
Thyristor TAG
TI-1153
TAG thyristor
TI1153
thyristor TAG 13
philips thyristor 239
|
PDF
|
TIP47
Abstract: TIP-47 TIP48 TIP49 TIP50 d0312
Text: PHILIPS INTERNATIONAL 4SE D E3 711002t. G0312M5 b E3PHIN 11 TIP47; TIP48 jI TIP49; TIP50 T-33-K ~ SILICON DIFFUSED POWER TRANSISTORS Medium-voltage, high-speed, glass-passivated NPN power transistors in T 0-22 0 envelope for amplifier and switching applications.
|
OCR Scan
|
711002t.
D0312MS
TIP47;
TIP48
TIP49;
TIP50
T0-220
TIP47
O-220AB,
riP47^
TIP-47
TIP49
TIP50
d0312
|
PDF
|
BLV36
Abstract: TRANSISTOR D 471 2222 372 2222 379 RF POWER TRANSISTOR NPN vhf RF push pull power amplifier vhf linear amplifier L15A television vhf linear pulse power amplifier blv36
Text: PHILIPS INTERNATIONAL bSE D D 711002t. DOba^OÔ SE2 • PHIN BLV36 A VHF LINEAR PUSH-PULL POWER TRANSISTOR T w o NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is prim arily intended for use in linear V H F television transmitters and transposers vision or
|
OCR Scan
|
711002t.
BLV36
BLV36
TRANSISTOR D 471
2222 372
2222 379
RF POWER TRANSISTOR NPN vhf
RF push pull power amplifier
vhf linear amplifier
L15A
television
vhf linear pulse power amplifier blv36
|
PDF
|
BFQ42
Abstract: SI 3105 A choke 663 transistor t07 BLW29 ferroxcube wideband hf choke
Text: 711002t. Q0b31ôl G7Q BIPHIN bSE D BLW29 J PHILIPS V. INTERNATIONAL V.H.F. POW ER TRAN SISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power
|
OCR Scan
|
711002t.
BLW29
BFQ42
7Z77686
7Z77587
SI 3105 A
choke 663
transistor t07
BLW29
ferroxcube wideband hf choke
|
PDF
|
BDT95
Abstract: bdt93
Text: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL SbE D I J _ v _ 711002t, 0043322 5 Tfl » P H I N T - 3 ? ' I 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio output stages and general am plifier and switching applications.
|
OCR Scan
|
BDT91
BDT93
BDT95
711002t,
711005b
0QM33E7
BDT95
|
PDF
|
BFR93
Abstract: BFR91 BFT93 choke 3122 108 20150 ScansUX40 transistor bfr93 TRANSISTOR B47
Text: Philips Semiconductors 711002t D D b 'iim T3Û PH I N Product specification NPN 5 G Hz w ideband transistor DESCRIPTION £ BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The transistor features very low
|
OCR Scan
|
711005t
BFR93
ON4186)
BFT93.
711002b
BFR91
BFT93
choke 3122 108 20150
ScansUX40
transistor bfr93
TRANSISTOR B47
|
PDF
|
transistor cq 529
Abstract: BLV94 sot-171 transistor zx series
Text: PHILIPS IN T E RN AT ION AL bSE D m 711GÛ5b 0Db3052 Jl 3T1 • PHIN BLV94 UHF P O W ER T R A N SIST O R NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz comm unication band.
|
OCR Scan
|
BLV94
711DfiEb
00b3DbÃ
transistor cq 529
BLV94
sot-171
transistor zx series
|
PDF
|
Biphase mark code
Abstract: PC74HC126 biphase SAA7274 D73D DDA0725 SAA7274P SAA7274T
Text: INTERIC SAA7274 SOUND AUDIO DIGITAL INPUT CIRCUIT ADIC G E N E R A L DESCRIPTIO N T he S A A 7 2 7 4 is an A u d io Digital In p u t C ircu it (A D IC ) w hich converts digital audio signals in accordance w ith th e IEC /E BU standards, IEC tech. com. No. 84, seer. 50, Jan. 1987 in to an equivalent
|
OCR Scan
|
SAA7274
SAA7274
Biphase mark code
PC74HC126
biphase
D73D
DDA0725
SAA7274P
SAA7274T
|
PDF
|
TDA8709
Abstract: IEC134 S028 TDA8709T fdk id
Text: Philips Semiconductors Product specification T -1 7 -0 7 -1 3 Video analog input interface TDA8709 PHILIPS INTERNATIONAL SbE D 7110fi2b 0 0 3 7 C H 3 FEATURES APPLICATIONS • 8-bit resolution • Video signal processing • Sampling rate up to 30 MHz • Digital picture processing
|
OCR Scan
|
T-77-07-IZ
TDA8709
7110fl2b
0037DT3
TDA8709
711Qfl5b
D03710b
IEC134
S028
TDA8709T
fdk id
|
PDF
|
|
|
P435M
Abstract: BGY47A
Text: BGY47A _ UHF POWER AMPLIFIER MODULE A broadband UHF am plifier module prim arily designed fo r mobile communications equipment, operating directly from 7.5 V o r 9.6 V electrical systems. The module w ill produce a m inim um ou tput of 2.0 W or 3.2 W in to a 50 £2 load over the frequency range 400 to 470 MHz.
|
OCR Scan
|
BGY47A
OT181
711Dfl2b
DD7417Ã
P435M
BGY47A
|
PDF
|
Diagram IC Lm 2476
Abstract: 4 digit 7 segment lcd display pin configuration 3.5 digits lcd display 4.5 digit lcd 4-digit counter philips e3 DDS7315 PCF1179C PCF1179CT PCF1179CU
Text: PHILIPS INTERNATIONAL b4E » • 711032^ 0057300 7^5 « P H I N P hilip s Sem P roduct specification 4-digit duplex LCD car clock PCF1179C FEATURES GENERAL DESCRIPTION • Internal voltage regulator is electrically programmable
|
OCR Scan
|
711032b
05730A
PCF1179C
12-hour
24-hour
28-lead
PCF1179C
711002t)
Diagram IC Lm 2476
4 digit 7 segment lcd display pin configuration
3.5 digits lcd display
4.5 digit lcd
4-digit counter
philips e3
DDS7315
PCF1179CT
PCF1179CU
|
PDF
|
TDA1011
Abstract: audio preamplifier circuit diagram TDA audio power amplifier tda POWER AMPLIFIER tda power amplifier circuit diagram r2km
Text: TDA1011 JV _ 2 TO 6 W AUDIO POWER AMPLIFIER The TD A 1011 is a monolithic integrated audio amplifier circuit in a 9-lead single in-line SIL plastic package. The device is especially designed for portable radio and recorder applications and delivers up
|
OCR Scan
|
TDA1011
TDA1011
711DAEL
60T37
audio preamplifier circuit diagram
TDA audio power amplifier
tda POWER AMPLIFIER
tda power amplifier circuit diagram
r2km
|
PDF
|
black 6 pin chip
Abstract: SDIP32 TDA9170 CJAu
Text: INTEGRATED CIRCUITS TDA9170 YU V picture improvement processor based on histogram modification Preliminary specification File under Integrated Circuits, IC02 October 1994 Philips Semiconductors PHILIPS PHILIPS V jP 711032b I D07fl220 OTS • Philips Semiconductors
|
OCR Scan
|
TDA9170
711002b
D07fl220
TDA9170
black 6 pin chip
SDIP32
CJAu
|
PDF
|
BFQ10
Abstract: 718s
Text: 41 PH IL IP S I N T E R N A T I O N A L E D El 711005 b DD2 b 2 1 S S Ö P H I N '' BFQ10 to 16 T-27-27 DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, w ith electrically insulated gates and a common substrate connected to the envelope; intended
|
OCR Scan
|
711005b
DD2b21S
BFQ10
T-27-27
BFQ10
718s
|
PDF
|
DT139
Abstract: DT139F M1632 BT139F M1628 gate control circuits for bt139 for heating applications
Text: PHILIPS INTERN A T I O N A L bSE T> m 7110âE?b OObSBlfi Tôt. B I PHI N BT139F SERIES FULL-PACK TRIACS Glass-passivated 16 ampere triacs in SOT-186 envelopes, which feature an electrically isolated m ounting base, They are intended fo r use in applications requiring high bidirectional transient and blocking
|
OCR Scan
|
BT139F
OT-186
BT139F-
OT-186
DT139
DT139F
M1632
M1628
gate control circuits for bt139 for heating applications
|
PDF
|
P3Q22V10-7A
Abstract: P3Q22V10-7D P3Q22V10-7N Pal programming 22v10
Text: PHILIPS INT ERNATIONAL bSE J> m 711DflEb O D b i n S 3SR • P H I N Philip» Sem iconductors Low Voltage specification 3 Volt BiCMOS Versatile PAL P3Q22V10-7 DESCRIPTION FEATURES
|
OCR Scan
|
711DflEb
P3Q22V10â
P3Q22V10-7
100mA
24-Pin
P3Q22V10-7N
0410D
P3Q22V10-7A
0401F
P3Q22V10-7D
Pal programming 22v10
|
PDF
|
M1434
Abstract: Gate Turn-Off Thyristors LS025 BTV58 BTV58-600R 600R CG10A 1000R
Text: PHILIPS 5ÔE D INTERNATIONAL • 7110ÖEb 0053003 OtM Bi PHIN BTV58 SERIES J \ _ FAST GATE TURN-OFF THYRISTORS T h y risto rs in T 0 - 2 2 0 A B envelopes capable o f being turned both on and o f f via the gate. T h e y are suitable fo r use in high-frequency inverters, pow er supplies, m otor c o n tro l etc. T h e devices have no
|
OCR Scan
|
BTV58
T0-220AB
BTV58â
1000R
711005b
00S30TM
M1434
Gate Turn-Off Thyristors
LS025
BTV58-600R
600R
CG10A
1000R
|
PDF
|
OM976
Abstract: 0071547 philips hybrid OM976
Text: 7110fl2b 0 0 7 1 S 4 3 Philips Semiconductors TDM M P H I N Preliminary specification Video output amplifier FEATURES OM976/1 PINNING • DC coupled video amplifier for cathode drive, with a positive-going video input. 1 input • Low internal thermal resistance
|
OCR Scan
|
7110a2fc.
OM976/1
OM976/1
OM976
0071547
philips hybrid OM976
|
PDF
|
P83C524
Abstract: 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP
Text: P H IL IP S I N T E R N A T I O N A L bSE J> □ 7 1 1 D Ö 2 b D D b l 3 4 3 544 H P H I N Philips Preliminary specification 8-bit microcontroller P83C524 CONTENTS 15 INSTRUCTION SET 1 FEATURES
|
OCR Scan
|
L1343
P83C524
P83C524
80C51
P83C524FBA
P83C524FBP
P83C524FFA
P83C524FFP
P83C524FHP
|
PDF
|