Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    700V 4A MOSFET Search Results

    700V 4A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    700V 4A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4N70F

    Abstract: No abstract text available
    Text: HY4N70T / HY4N70FT 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS ON =2.8W@VGS=10V, ID=2A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current


    Original     		PDF HY4N70T HY4N70FT O-220AB ITO-220AB 2002/95/EC O-220AB ITO-220AB MIL-STD-750 HY4N70T 4N70T 4N70F

    Untitled

    Abstract: No abstract text available
    Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A


    Original     		PDF HY4N70D HY4N70M O-252 O-251 2002/95/EC O-252 O-251 250mA 125oC -55oC

    Untitled

    Abstract: No abstract text available
    Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A


    Original     		PDF HY4N70D HY4N70M O-252 O-251 2002/95/EC O-252 O-251 250mA 125oC -55oC

    Untitled

    Abstract: No abstract text available
    Text: AP04N60H-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V ▼ Fast Switching Characteristic RDS ON 2.8Ω ▼ Simple Drive Requirement ID D 4A G ▼ RoHS Compliant & Halogen-Free


    Original     		PDF AP04N60H-H-HF AP04N60 265VAC O-252 100us 100ms

    GE04N70B

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/01/04 REVISED DATE : GE04N70B BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 650/700V 2.4 4A Description The GE04N70B series are specially designed as main switching devices for universal 90~265VAC off-line


    Original     		PDF GE04N70B 650/700V GE04N70B 265VAC O-220

    Untitled

    Abstract: No abstract text available
    Text: AP04N60S-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.8Ω ID 4A G ▼ RoHS Compliant & Halogen-Free


    Original     		PDF AP04N60S-H-HF AP04N60 265VAC O-263 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: AP04N60S-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V ▼ Fast Switching Characteristic RDS ON 2.8Ω ▼ Simple Drive Requirement ID D 4A G ▼ RoHS Compliant & Halogen-Free


    Original     		PDF AP04N60S-H-HF AP04N60 265VAC O-263 100us 100ms

    AP04N60

    Abstract: No abstract text available
    Text: AP04N60H-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.8Ω ID 4A G ▼ RoHS Compliant & Halogen-Free


    Original     		PDF AP04N60H-H-HF AP04N60 265VAC O-252 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: AP04N70BI-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS 700V Fast Switching Characteristic RDS ON 2.4 Simple Drive Requirement ID 4A RoHS Compliant & Halogen-Free Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP04N70BI-H-HF O-220CFM

    04n70bf

    Abstract: 04N70BF-H SSM04N70BGF-H 04N70 Transistor 04N70BF 04n70b marking code C2 diode marking codes transistors SSs SSM04 ssm04n70bgfh
    Text: SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 700V R DS ON 2.4Ω ID 4A DESCRIPTION The SSM04N70BGF-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC


    Original     		PDF SSM04N70BGF-H SSM04N70BGF-H O-220FM O-220FM 04n70bf 04N70BF-H 04N70 Transistor 04N70BF 04n70b marking code C2 diode marking codes transistors SSs SSM04 ssm04n70bgfh

    Untitled

    Abstract: No abstract text available
    Text: AP04N70BS-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS 700V Fast Switching Characteristic RDS ON 2.4 Simple Drive Requirement ID 4A RoHS Compliant & Halogen-Free Description AP04N70 series are specially designed as main switching devices for


    Original     		PDF AP04N70BS-H-HF AP04N70 265VAC O-263 100us 100ms

    AP04N70BI-H

    Abstract: No abstract text available
    Text: AP04N70BI-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.4Ω ID G 4A S Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP04N70BI-H O-220CFM AP04N70BI-H

    04n70bi

    Abstract: 04N70B 04N70 TO220CFM AP04N70BI-H TO-220CFM
    Text: AP04N70BI-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.4Ω ID G 4A S Description AP04N70 series are specially designed as main switching devices for


    Original     		PDF AP04N70BI-H AP04N70 265VAC O-220CFM O-220CFM 04N70BI 04n70bi 04N70B 04N70 TO220CFM AP04N70BI-H TO-220CFM

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF 4N70-R 4N70-R O-220F1 QW-R502-A66

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K-MK Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70K-MK is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF 4N70K-MK 4N70K-MK 4N70KL-TF3-T 4N70KG-TF3-T QW-r205-015

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-S Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF 4N70-S 4N70-S O-252 QW-R205-023

    AP04N70BF

    Abstract: AP04N70BF-H
    Text: AP04N70BF-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BV DSS 700V RDS ON 2.4Ω ID G 4A S Description AP04N70 series are specially designed as main switching devices for


    Original     		PDF AP04N70BF-H AP04N70 265VAC O-220FM O-220FM AP04N70BF AP04N70BF-H

    AP04N70BP

    Abstract: No abstract text available
    Text: AP04N70BP Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Dynamic dv/dt Rating BVDSS D ▼ Repetitive Avalanche Rated RDS ON ▼ Fast Switching ID G ▼ Simple Drive Requirement 600/650/700V 2.4Ω 4A S Description AP04N70 series are specially designed as main switching devices for


    Original     		PDF AP04N70BP 600/650/700V AP04N70 265VAC O-220 O-220 AP04N70BP

    04N70BP

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP04N70BP-H-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 700V R DS ON 2.4Ω ID 4A S Description Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		PDF AP04N70BP-H-HF-3 AP04N70BP-H-HF-3 O-220 O-220 AP04N70B 04N70BP 04N70BP

    04n70bi

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP04N70BI-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D 100% Avalanche Tested Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 700V R DS ON 2.4Ω ID 4A S Description Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		PDF AP04N70BI-H-HF-3 AP04N70BI-H-HF-3 O-220CFM AP04N70B 04N70BI O-220CFM 04n70bi

    Untitled

    Abstract: No abstract text available
    Text: ICE4N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 700V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE4N70 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP04N70BS-H-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 700V R DS ON 2.4Ω ID 4A S Description Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		PDF AP04N70BS-H-HF-3 AP04N70BS-H-HF-3 O-263 O-263 AP04N70B 04N70BS

    Untitled

    Abstract: No abstract text available
    Text: ICE4N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 700V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE4N70FP 250uA O-220 100us 0E-06 0E-04 0E-02 0E-00

    Untitled

    Abstract: No abstract text available
    Text: SSM04N70BP,R N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 600/650/700V R DS ON 2.4Ω 4A ID G S Description The SSM04N70BR is in a TO-262 package, which is widely used for G D commercial and industrial applications, and is well suited for universal


    Original     		PDF SSM04N70BP 600/650/700V SSM04N70BR O-262 265VAC SSM04N70BP O-220