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    7002 2N7002 Search Results

    7002 2N7002 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70023SEHMX Renesas Electronics Corporation 100V, 60A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL70024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL70023SEHML Renesas Electronics Corporation 100V, 60A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL70020SEHX/SAMPLE Renesas Electronics Corporation 40V, 65A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    87002AG-02LF Renesas Electronics Corporation 1:2, Differential-to-LVCMOS/LVTTL Zero Delay Clock Generator Visit Renesas Electronics Corporation
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    7002 2N7002 Price and Stock

    onsemi 2N7002L

    MOSFETs Small Signal MOSFET 60V 115mA 75 Ohm Single N-Channel SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N7002L 2,995,959
    • 1 $0.18
    • 10 $0.099
    • 100 $0.054
    • 1000 $0.049
    • 10000 $0.03
    		Buy Now

    Nexperia 2N7002NXAKR

    MOSFETs 2N7002NXAK/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N7002NXAKR 1,457,065
    • 1 $0.12
    • 10 $0.074
    • 100 $0.033
    • 1000 $0.028
    • 10000 $0.018
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    Nexperia 2N7002BK,215

    MOSFETs 2N7002BK/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N7002BK,215 1,351,453
    • 1 $0.11
    • 10 $0.083
    • 100 $0.049
    • 1000 $0.045
    • 10000 $0.026
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    Nexperia 2N7002,215

    MOSFETs 2N7002/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N7002,215 837,787
    • 1 $0.19
    • 10 $0.126
    • 100 $0.057
    • 1000 $0.055
    • 10000 $0.029
    		Buy Now

    Vishay Intertechnologies 2N7002K-T1-GE3

    MOSFETs 60V Vds 20V Vgs SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N7002K-T1-GE3 779,451
    • 1 $0.19
    • 10 $0.135
    • 100 $0.121
    • 1000 $0.062
    • 10000 $0.045
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    Find more 7002 2N7002 price and stock on Findchips.com

    7002 2N7002 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking 7002

    Abstract: No abstract text available
    Text: 2N7002 Mosfet N-Channel SOT-23 1. GATE 2. SOURCE 3. DRAIN Features — High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability — — — Marking: 7002 Dimensions in inches and (millimeters)


    Original     		2N7002 OT-23 500mA 200mA 115mA, marking 7002 PDF

    2n7000 equivalent

    Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, 2n7000 equivalent VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P PDF

    BS170

    Abstract: VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix
    Text: 2N7000/7002, VQ1000J/P, BS170 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V


    Original     		2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J P-37993--Rev. BS170 VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix PDF

    VQ1000J

    Abstract: 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, VQ1000J 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429 PDF

    equivalent of BS170

    Abstract: 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P


    Original     		2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capacitan02, equivalent of BS170 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING PDF

    702E

    Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
    Text: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT


    Original     		2N7002E OT-323 SRT84W 2N7002S OT-363 SRT84S 2N7002 OT-23 702E MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT PDF

    SMD MARKING CODE 7002

    Abstract: QW-BTR12 POWER MOSFET P1 smd marking code smd diode 2n7002 marking code 2N7002-G MOSFET SMD MARKING CODE 2n7002 0-35-W Diode smd code 202 120dg
    Text: MOSFET SMD Diodes Specialist 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) S 0.103(2.60) 0.086(2.20) Maximum Ratings (at TA=25°C)


    Original     		2N7002-G OT-23 Characterist05 QW-BTR12 SMD MARKING CODE 7002 QW-BTR12 POWER MOSFET P1 smd marking code smd diode 2n7002 marking code 2N7002-G MOSFET SMD MARKING CODE 2n7002 0-35-W Diode smd code 202 120dg PDF

    2N7002-G

    Abstract: MOSFET
    Text: MOSFET 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) S Maximum Ratings (at T =25°C) A Parameter Drain-Source voltage


    Original     		2N7002-G OT-23 QW-BTR12 2N7002-G MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G Maximum Ratings (at T =25°C) A Value Unit VDS 60 V Drain current ID


    Original     		2N7002-G OT-23 QW-BTR12 PDF

    2N7002H

    Abstract: SMD MARKING CODE 7002 POWER MOSFET P1 smd marking code smd 7002 smd transistor 7002 MOSFET SMD MARKING CODE smd diode 2n7002 marking code equivalent smd mosfet 2n7002 HF smd marking NC package sot23
    Text: MOSFET SMD Diodes Specialist 2N7002-HF N-Channel RoHS Device Features SOT-23 Halogen free. Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G S 0.083(2.10) 0.066(1.70) 0.006(0.15)


    Original     		2N7002-HF OT-23 QW-JTR03 2N7002H SMD MARKING CODE 7002 POWER MOSFET P1 smd marking code smd 7002 smd transistor 7002 MOSFET SMD MARKING CODE smd diode 2n7002 marking code equivalent smd mosfet 2n7002 HF smd marking NC package sot23 PDF

    2N7002-HF

    Abstract: MOSFET
    Text: MOSFET 2N7002-HF N-Channel RoHS Device Halogen Free SOT-23 Features -Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G S 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.044(1.10)


    Original     		2N7002-HF OT-23 QW-JTR03 2N7002-HF MOSFET PDF

    resistor 2010

    Abstract: 47 Ohm to 100 Ohm resistor VP2-0083 Transformer 9v 2a EC21 51 ohm 5w 12k resistor MAX1856EUB resistor 100k ohm 25MV390AX
    Text: D1 EC21 QS03L VIN 9V to 14V C3 390uF 25V MV-AX 2x 10 SHDN 9 VCC 4 R9 4,9 15 0.5W 1 C9 100pF 3,5 2 D2 EC21 QS03L N1 IRLL 2705 CS+ 6 PGND 2 7 6 12 EXT 8 U1 MAX1856 C1 1uF R10 47 8,10 C8 680pF 1 LDO R1 100k (500kHz) 11 T1 16.4uH VP2 -0083 7 R3 100 C7 1nF R2


    Original     		QS03L 390uF 100pF MAX1856 680pF 500kHz) resistor 2010 47 Ohm to 100 Ohm resistor VP2-0083 Transformer 9v 2a EC21 51 ohm 5w 12k resistor MAX1856EUB resistor 100k ohm 25MV390AX PDF

    702 sot 23

    Abstract: transistor marking 7002
    Text: Central 2N 7002 semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.


    OCR Scan     		2N7002 OT-23 200mA 702 sot 23 transistor marking 7002 PDF

    2106a

    Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
    Text: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108


    OCR Scan     		2N6661 2N7001 2N7002 2N7007 BS107 BS107A BS108 BS170 BS250 BSR64 2106a BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019 PDF

    m2n7000

    Abstract: 1000J sot23 BS170
    Text: Tem ic 2N7000/7002, VQIOOOJ/P, BS170_ slUconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V B R D S S Min (V) * * D S (o n ) Max (Q) I d (A) Vr.s(ih) (V) 2N7000 5 @ V gs = 10V 0.8 to 3 0.2 2N7002 7.5 @ V gs = 10 V 1 to 2.5


    OCR Scan     		2N7000/7002, BS170_ 2N7000 2N7002 VQ1000J VQ1000P BS170 P-37993-- VQ1000J/P, m2n7000 1000J sot23 BS170 PDF

    MOSFET S170

    Abstract: s170 mosfet s170 S-52429 1000J s170 to92
    Text: 2N7000/7002, VQIOOOJ/P, BS170 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number *t>S on M a x (Q ) V G S (th )(V ) 2N7000 5 @ V q s = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VG S = 10 V 1 to 2.5 0.115 V(BR)DSS M i n (V )


    OCR Scan     		2N7000/7002, BS170 2N7000 2N7002 BS170 S-52429-- 28-Apr-97 VQ1000J/P, MOSFET S170 s170 mosfet s170 S-52429 1000J s170 to92 PDF

    SOT23 FET

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N 7002 Advance Information S m a ll-S ig n a l Field E ffe ct T ra n sisto r N -Channel Enhancem ent-M ode S ilico n G ate TM O S N-CHANNEL SMALL-SIGNAL TM O S FET rDS on = 7.5 O HM 60 VOLTS This TM O S FET is designed fo r high-speed sw itch in g


    OCR Scan     		OT-23 O-236AA) SOT23 FET PDF

    Untitled

    Abstract: No abstract text available
    Text: '.PLESSEY SEf ll CO'ND/DISCRETE 03 / N-channel enhancement mode vertical D M O S FET DF|?aaDS33 <=2 " 2N7002 ADVANCE PRODUCT INFORMATION A B S O L U T E M A X I M U M R A T IN G S Param eter 2N 7002 Sy m b o l U nit D rain-so urce voltage V DS 60 V C o n tin u o u s drain current at T A = 2 5 ° C


    OCR Scan     		aaDS33 2N7002 300jiS, PDF

    2N7002

    Abstract: 2N7000 FAIRCHILD 2N7002 2N700 2n7002 12 2N7002 FAIRCHILD 2N7002A 2N7000 MOSFET 100C NDS7002A
    Text: Novem ber 1995 FAIRCHILD M IC D N D U C T O R 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		2N7000 2N7002 NDS7002A 400mA OT-23, NDS7002A 2N7002A FAIRCHILD 2N7002 2N700 2n7002 12 2N7002 FAIRCHILD 2N7000 MOSFET 100C PDF

    Untitled

    Abstract: No abstract text available
    Text: N o vem b er 1995 FAIRCHILD M ICONDUCTQR i 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,


    OCR Scan     		2N7000 2N7002 NDS7002A 400mA /NDS7002A PDF

    2N7002 MARKING

    Abstract: 2N7002 SOT-23 2N70 2N7002 SOT-23 PEL
    Text: 2N7002 S m all Signal M O S F E T N -C hannel Features: •Low On-Resistance : 3Q *Low Input Capacitance: 25PF *Low Out put Capacitance : 6PF •Low Threshole :1 .5V TYE *Fast Switching Speed : 7.5ns M a x im u m R atings (TA=25°C Unless Otherwise Specified)


    OCR Scan     		2N7002 2N7002 OT-23 OT-23 2N7002 MARKING 2N7002 SOT-23 2N70 SOT-23 PEL PDF

    N7000

    Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
    Text: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been


    OCR Scan     		2N7000/2N7002/NDF7000A/NDS7002A 81-043-299-240B bSD1130 N7000 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm PDF

    sot 23 70.2

    Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
    Text: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code


    OCR Scan     		2N7002 OT-23 OT-23: sot 23 70.2 sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W PDF

    IMIT TC2

    Abstract: Mosfet 2n7000 2N7002-702 2N7002 MARKING 712 mosfet motor dc 48v NDS7002A-712 702 TRANSISTOR sot-23 "ON Semiconductor" 2N7002 NDS7002A 2N7000
    Text: Semiconductor March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third


    OCR Scan     		2N7000/2N7002/NDF7000A/NDS7002A IMIT TC2 Mosfet 2n7000 2N7002-702 2N7002 MARKING 712 mosfet motor dc 48v NDS7002A-712 702 TRANSISTOR sot-23 "ON Semiconductor" 2N7002 NDS7002A 2N7000 PDF