Untitled
Abstract: No abstract text available
Text: V385 8-BIT LVDS TRANSMITTER FOR VIDEO General Description Features The V385 transmitter converts 28 bits of 3.3 V CMOS/TTL into 4 Low Voltage Differential Signaling LVDS data streams while the transmit clock input is transmitted in parallel with the data streams over a fifth
|
Original
|
56-pin
TxIN10
TxIN11
|
PDF
|
THC63LVDM83
Abstract: DS90C385 SN65LVDS93 V385 V385G V385GLF V385GLFTR V385GTR A951 734ns
Text: V385 8-BIT LVDS TRANSMITTER FOR VIDEO General Description Features The V385 transmitter converts 28 bits of 3.3 V CMOS/TTL into 4 Low Voltage Differential Signaling LVDS data streams while the transmit clock input is transmitted in parallel with the data streams over a fifth
|
Original
|
56-pin
TxIN10
TxIN11
TxIN12
TxIN13
TxIN14
TxIN15
TxIN16
THC63LVDM83
DS90C385
SN65LVDS93
V385
V385G
V385GLF
V385GLFTR
V385GTR
A951
734ns
|
PDF
|
DS90C385
Abstract: SN65LVDS93 THC63LVDM83 V385 V385A V385AGLF V385AGLFT
Text: V385A 8-BIT LVDS TRANSMITTER FOR VIDEO General Description Features The V385A transmitter converts 28 bits of 3.3 V CMOS/TTL into 4 Low Voltage Differential Signaling LVDS data streams while the transmit clock input is transmitted in parallel with the data streams over a fifth
|
Original
|
V385A
V385A
TxIN10
DS90C385
SN65LVDS93
THC63LVDM83
V385
V385AGLF
V385AGLFT
|
PDF
|
THC63LVDM83
Abstract: lvds 30 pin TTL parallel to vga DS90C385 SN65LVDS93 V385 V385AG V385AGLF V385AGLFT V385AGT
Text: V385 8-BIT LVDS TRANSMITTER FOR VIDEO General Description Features The V385 transmitter converts 28 bits of 3.3 V CMOS/TTL into 4 Low Voltage Differential Signaling LVDS data streams while the transmit clock input is transmitted in parallel with the data streams over a fifth
|
Original
|
TxIN10
TxIN11
TxIN12
TxIN13
TxIN14
TxIN15
TxIN16
TxIN17
TxIN18
TxIN19
THC63LVDM83
lvds 30 pin
TTL parallel to vga
DS90C385
SN65LVDS93
V385
V385AG
V385AGLF
V385AGLFT
V385AGT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: V385A 8-BIT LVDS TRANSMITTER FOR VIDEO General Description Features The V385A transmitter converts 28 bits of 3.3 V CMOS/TTL into 4 Low Voltage Differential Signaling LVDS data streams while the transmit clock input is transmitted in parallel with the data streams over a fifth
|
Original
|
V385A
V385A
DS90C385,
SN65LVDS93
THC63LVDM83,
|
PDF
|
thc63lvdm83
Abstract: DS90C385 SN65LVDS93 V385 V385A V385AGLF V385AGLFT
Text: V385A 8-BIT LVDS TRANSMITTER FOR VIDEO General Description Features The V385A transmitter converts 28 bits of 3.3 V CMOS/TTL into 4 Low Voltage Differential Signaling LVDS data streams while the transmit clock input is transmitted in parallel with the data streams over a fifth
|
Original
|
V385A
V385A
thc63lvdm83
DS90C385
SN65LVDS93
V385
V385AGLF
V385AGLFT
|
PDF
|
digital video transmitter
Abstract: LVDS Transmitter THine V385 V385AG V385AGLF V385AGLFT V385AGT V385GLF DS90C385 SN65LVDS93
Text: V385 8-BIT LVDS TRANSMITTER FOR VIDEO General Description Features The V385 transmitter converts 28 bits of 3.3 V CMOS/TTL into 4 Low Voltage Differential Signaling LVDS data streams while the transmit clock input is transmitted in parallel with the data streams over a fifth
|
Original
|
TxIN10
TxIN11
TxIN12
TxIN13
TxIN14
TxIN15
TxIN16
TxIN17
TxIN18
TxIN19
digital video transmitter
LVDS Transmitter THine
V385
V385AG
V385AGLF
V385AGLFT
V385AGT
V385GLF
DS90C385
SN65LVDS93
|
PDF
|
thc63lvdm83
Abstract: LVDS Transmitter THine digital video transmitter ttl input convert to vga output TTL parallel to vga DS90C385 SN65LVDS93 V385 V385A V385AG
Text: V385 8-BIT LVDS TRANSMITTER FOR VIDEO General Description Features The V385 transmitter converts 28 bits of 3.3 V CMOS/TTL into 4 Low Voltage Differential Signaling LVDS data streams while the transmit clock input is transmitted in parallel with the data streams over a fifth
|
Original
|
V385A
TxIN10
TxIN11
TxIN12
TxIN13
TxIN14
TxIN15
TxIN16
thc63lvdm83
LVDS Transmitter THine
digital video transmitter
ttl input convert to vga output
TTL parallel to vga
DS90C385
SN65LVDS93
V385
V385AG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC5758 Silicon NPN Epitaxial VHF / UHF Wide band amplifier REJ03G0754-0500 Previous ADE-208-1397D Rev.5.00 Aug.10.2005 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter
|
Original
|
2SC5758
REJ03G0754-0500
ADE-208-1397D)
PUSF0003ZA-A
|
PDF
|
70.2 L marking
Abstract: 2SC5758 2SC5758WF-TR-E PUSF0003ZA-A SC-89
Text: 2SC5758 Silicon NPN Epitaxial VHF / UHF Wide band amplifier REJ03G0754-0500 Previous ADE-208-1397D Rev.5.00 Aug.10.2005 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter
|
Original
|
2SC5758
REJ03G0754-0500
ADE-208-1397D)
PUSF0003ZA-A
70.2 L marking
2SC5758
2SC5758WF-TR-E
PUSF0003ZA-A
SC-89
|
PDF
|
SC-89
Abstract: 2SC5758 2SC5758WF-TR-E PUSF0003ZA-A 822 ic MAKING
Text: 2SC5758 Silicon NPN Epitaxial VHF / UHF Wide band amplifier REJ03G0754-0500 Previous ADE-208-1397D Rev.5.00 Aug.10.2005 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter
|
Original
|
2SC5758
REJ03G0754-0500
ADE-208-1397D)
PUSF0003ZA-A
SC-89
2SC5758
2SC5758WF-TR-E
PUSF0003ZA-A
822 ic MAKING
|
PDF
|
LC-R067R2P
Abstract: Lead-Acid 6V 11M25 EUROBAT tag 306 400
Text: Individual Data Sheets For main and standby power supplies. Expected trickle design life: 6 – 9 years at 20°C according to Eurobat. LC-R067R2P*1 Dimensions mm 6.35 Battery case resin: standard (UL94HB) Contents indicated (including the recycle marking, etc.)
|
Original
|
LC-R067R2P
UL94HB)
151mm
100mm
Lead-Acid 6V
11M25
EUROBAT
tag 306 400
|
PDF
|
63 1826 0306
Abstract: Ka 2535 data sheet zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
Text: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0752-0200 Previous ADE-208-1414 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz
|
Original
|
2SC5702
REJ03G0752-0200
ADE-208-1414)
PUSF0003ZA-A
63 1826 0306
Ka 2535 data sheet
zo 103 ma
2SC5702
2SC5702ZS-TL-E
PUSF0003ZA-A
SC-89
|
PDF
|
1128 marking
Abstract: 63 1826 0306 zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
Text: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0752-0200 Previous ADE-208-1414 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz
|
Original
|
2SC5702
REJ03G0752-0200
ADE-208-1414)
PUSF0003ZA-A
1128 marking
63 1826 0306
zo 103 ma
2SC5702
2SC5702ZS-TL-E
PUSF0003ZA-A
SC-89
|
PDF
|
|
|
A1441 nec
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
2SC5758
Abstract: 2SC5758WF-TR-E PUSF0003ZA-A SC-89
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
nec 1251
Abstract: 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
BFR92R
Abstract: sot 23 transistor 70.2 MAR 641 TRANSISTOR
Text: Temic BFR92/BFR92R Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR92 Marking: PI Plastic case SOT 23
|
OCR Scan
|
BFR92/BFR92R
BFR92
BFR92R
26-Mar-97
sot 23 transistor 70.2
MAR 641 TRANSISTOR
|
PDF
|
TX 78726-9000
Abstract: No abstract text available
Text: .100 x .100 Latch/Ejector Header 3 Wall • Military with 3M’s 3518 polarizing key and center bump polarization • Low profile • Optional ejector latches • Mounting holes for securing header to board • Three wall shroud provides design flexibility
|
OCR Scan
|
TS-0158-14
QQ-N-290,
TS-0162-07
TX 78726-9000
|
PDF
|
fr 0204
Abstract: 2SC5347 ZS21 ZS22 TA-0689
Text: O rdering num ber: EN 5512A 2SC5347 N0.5512A NPN Epitaxial Planar Silicon Transistor SAMYO i High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications F eatu res • High frequency medium output amplification: fr=4.7GHz typ f= 1GHz .
|
OCR Scan
|
2SC5347
250mm2
IS11I
IS22I
fr 0204
2SC5347
ZS21
ZS22
TA-0689
|
PDF
|
transistor MAR 543
Abstract: transistor BFR91 IPS240 BFR91 transistor transistor mar 839 Telefunken u 439 transistor MAR 439
Text: Temic BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency BFR91 Marking: BFR91
|
OCR Scan
|
BFR91
BFR91
24-Mar-97
transistor MAR 543
transistor BFR91
IPS240
BFR91 transistor
transistor mar 839
Telefunken u 439
transistor MAR 439
|
PDF
|
transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
|
OCR Scan
|
BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
|
PDF
|
up 2581 v
Abstract: No abstract text available
Text: BFR92/BFR92R V IS HAY Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •
|
OCR Scan
|
BFR92/BFR92R
BFR92
BFR92R
20-Jan-99
up 2581 v
|
PDF
|
