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    6Z TRANSISTOR Search Results

    6Z TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    6Z TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LMBF170LT1G LMBF170LT1G 3 FEATURE 1 ƽ Pb-Free Package is available. 2 SOT-23 DEVICE MARKING AND ORDERING INFORMATION Device Marking Drain 3 Shipping LMBF170LT1G 6Z 3000/Tape&Reel LMBF170LT3G 6Z 10000/Tape&Reel


    Original     		PDF LMBF170LT1G OT-23 3000/Tape LMBF170LT3G 10000/Tape

    UN1111

    Abstract: XP6111
    Text: Composite Transistors XP6111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UN1111 x 2 elements 0 to 0.1 ● 0.12 –0.02 • Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● Two elements incorporated into one package.


    Original     		PDF XP6111 UN1111 UN1111 XP6111

    transistor 6z

    Abstract: marking 6Z UN1111 XN6111
    Text: Composite Transistors XN6111 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Collector to base voltage Rating Collector to emitter voltage of element Collector current 1 : Collector Tr1 2 : Base (Tr1)


    Original     		PDF XN6111 transistor 6z marking 6Z UN1111 XN6111

    LM780L05ACM-ND

    Abstract: PTFB193408SVV1R250XTMA1
    Text: PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input


    Original     		PDF PTFB193408SV PTFB193408SV 340-watt H-34275G-6/2 LM780L05ACM-ND PTFB193408SVV1R250XTMA1

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06111 (XP6111) Silicon PNP epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XP06111 XP6111) UNR2111 UN2111)

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XP06111 XP6111 Silicon PNP epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half


    Original     		PDF XP06111 XP6111) UNR2111 UN2111)

    UN1111

    Abstract: UNR1111 XN06111 XN6111
    Text: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol


    Original     		PDF XN06111 XN6111) UN1111 UNR1111 XN06111 XN6111

    UN2111

    Abstract: UNR2111 XN06111 XN6111
    Text: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package


    Original     		PDF XN06111 XN6111) UN2111 UNR2111 XN06111 XN6111

    marking 6Z

    Abstract: UN1111 UNR1111 XN06111 XN6111
    Text: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planer transistor 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 1.50+0.25


    Original     		PDF XN06111 XN6111) UNR1111 UN1111) marking 6Z UN1111 XN06111 XN6111

    UN2111

    Abstract: UNR2111 XP06111 XP6111
    Text: Composite Transistors XP06111 XP6111 Silicon PNP epitaxial planar transistor (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half


    Original     		PDF XP06111 XP6111) UN2111 UNR2111 XP06111 XP6111

    mxt 2410 sx

    Abstract: PTC MZ 5 pot 3296 BDXXX lm 7914 pot 3296 small thermo-disc 4011 5106a therm-o-disc lm 3751
    Text: RoHS-COMPLIANT INFORMATION CHART RoHS-compliant refers to no Pb, Cd, Cr+6, Hg, PBB or PBDE unless use exempted or within allowable limits. RoHS 5/6 refers to no Cd, Cr+6, Hg, PBB or PBDE – Pb solder or Pb plating present Telecom exemption . Bourns Product Line


    Original     		PDF CD0402, OD323, CD214A-F, 14A-R, 214B-F, CD214B-R, 214C-F, 214C-R, CD214L-TxxA/CA CD214A-B, mxt 2410 sx PTC MZ 5 pot 3296 BDXXX lm 7914 pot 3296 small thermo-disc 4011 5106a therm-o-disc lm 3751

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06111 (XP6111) Silicon PNP epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XP06111 XP6111) UNR2111 UN2111)

    marking 6Z

    Abstract: UN1111 UNR1111 XP06111 XP6111
    Text: Composite Transistors XP06111 XP6111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1111(UN1111) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1


    Original     		PDF XP06111 XP6111) UNR1111 UN1111) marking 6Z UN1111 XP06111 XP6111

    marking 6Z

    Abstract: UN1111 UNR1111 XP06111 XP6111
    Text: Composite Transistors XP06111 XP6111 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP06111 XP6111) UNR1111 UN1111) marking 6Z UN1111 XP06111 XP6111

    UN2111

    Abstract: UNR2111 XN06111 XN6111
    Text: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 0.4±0.2 1 (0.65)


    Original     		PDF XN06111 XN6111) UN2111 UNR2111 XN06111 XN6111

    UNR2111

    Abstract: XP06111
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06111 Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)


    Original     		PDF 2002/95/EC) XP06111 UNR2111 UNR2111 XP06111

    702 sot23

    Abstract: No abstract text available
    Text: SOT-23 TRANSISTORS continued TMOS FETs The following is a listing of small-signal surface mount TMOS FETs which exhibit low Ros(on) characteristics. Pinout: 1-Gate, 2-Source, 3-Drain Device Switching Time V GS(th) R DS(on) @ I d Marking Ohm mA BVqss Volts


    OCR Scan     		PDF OT-23 MMBF170LT1 BSS123LT1 2N7002LT1 702 sot23

    "Philips Semiconductors" BAX DO-35

    Abstract: B2V86-2V0 b2v86 BZV87-3V24 ba315 BA220
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes LOW-VOLTAGE STABISTORS OVERVIEW VF typ. V 1 mA 5 mA at lF: Vr V RRM ' frm 10 mA max. max. max. sF typ. rdiH max. (V) (V) (mA) (mV/K)


    OCR Scan     		PDF DO-35 OD80C BAX14 BA220 BA315 BA314 BZV86-1V4 BZV86-2V0 BZV86-2V6 BZV86-3V2 "Philips Semiconductors" BAX DO-35 B2V86-2V0 b2v86 BZV87-3V24

    Untitled

    Abstract: No abstract text available
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA T M O S FET Transistor N-Channel ir M M BF170LT1 GATE V •—1 TMOS MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage Vd GS 60 Vdc G ate-Source Voltage — Continuous — Non-repetitive tp < 50 fis


    OCR Scan     		PDF BF170LT1 O-236AB)

    2SA1015

    Abstract: 2SC1815
    Text: TOSHIBA 2SA1015 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 015© AUDIO FREQUENCY AM PLIFIER APPLICATIONS Unit in mm LO W NOISE AM PLIFIER APPLICATIONS • . 5.1 M AX. High Voltage and High Current : v CEO “ - 50V (Min.), Iq = - 150mA (Max.)


    OCR Scan     		PDF 2SA1015© 2SA1015 150mA 2SC1815© 961001EAA2' 2SA1015 2SC1815

    transistor 6z

    Abstract: No abstract text available
    Text: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 TO-236AB M AXIM UM RATINGS Rating Symbol Value Drain-Source Voltage vdss 60 Vdc Drain-Gate Voltage V d GS 60 Vdc Gate-Source Voltage Vg s ±20 Vdc Drain Current — Continuous Pulsed 'd 'd m 0.5 0.8 Ade Unit D rain


    OCR Scan     		PDF MMBF170LT1 OT-23 O-236AB) 2N7000 transistor 6z

    BF546

    Abstract: marking 6k sot-23 package BF5459L F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot
    Text: MOTOROLA SC 4bE T> • XSTRS/R F b 3 b 7 2 S 4 D O' îb S Ot 2 « f l O T t — 3 SO T-23 T R A N S IS T O R S (continued) Unipolar (Field Effect) Transistors (JFETs) RF JFETs Pinout: 1-Drain, 2-Source, 3-Gate NF Device Marking Typ (dB) f (MHz) Min (mmhos)


    OCR Scan     		PDF BFJ309L BFJ310L BF5486L BF5457L BF5459L OT-23 OT-143 MLL-34 OT-223 SO-16 BF546 marking 6k sot-23 package F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot

    TH3L10

    Abstract: TK3L10 TH3L10 ic 2SA1679 T7K40 TH3L10 Z 2SD1788 2SC4148 TP10S4 TP10T4
    Text: POWER TRANSISTORS SHINDENGEN ELECTRIC MFG • 021= 1307 0 0 0 0 0 2 1 ISHE J G to r Induction C o o k e t^ a aa * é ä Absolute Maximum Ratings E IA J Type No. No. — — 1 i M a £ V o bo *-T30G 40 VCEO V eb o Ic Ib PT [V ] [V ] [V ] [A ] [A ] [W ] 800


    OCR Scan     		PDF GQ00G21 T30Q40 TP10T4 TP12T4 TP15T4 2SC4148, TP10S4 TP12S4 TP15S4 TH3L10 TH3L10 TK3L10 TH3L10 ic 2SA1679 T7K40 TH3L10 Z 2SD1788 2SC4148 TP10T4

    Untitled

    Abstract: No abstract text available
    Text: IHfOll Devices, \nt i l . '‘•rH.O S P E C I F I C A T I O N S , SO L IT R O N 8368602 D EV X Q E S E b P C ù ù Z : NO.: — I NC — TYPE: $ L A ò tO B tìPJòStt-ieMJO PfitOS/L TO~5 u— - -^ _ -C A S E : M A X IM U M R A T IN G S


    OCR Scan     		PDF