Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?
|
Original
|
PDF
|
MAX1640
MAX1641
|
Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?
|
Original
|
PDF
|
MAX1640
MAX1641
|
IR7309
Abstract: EY 85 rectifier IR-730 IN5822 IN5817 IN5822 diode MAX1640 MAX1640EEE MAX1641 MAX1641EEE
Text: 19-1245; Rev 2; 5/09 ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?
|
Original
|
PDF
|
MAX1640
MAX1641
MAX1640EEE+
MAX1641C/D
MAX1641EEE+
MAX1640C/D
MAX1641)
MAX1640)
16-Pin
IR7309
EY 85 rectifier
IR-730
IN5822
IN5817
IN5822 diode
MAX1640
MAX1640EEE
MAX1641
MAX1641EEE
|
IRFP260 equivalent
Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent
Text: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200
|
Original
|
PDF
|
IXTD67N10-7X
IXTD75N10-7X
IXTD42N20-7X
IXTD50N20-7X
IFRC250-5X
IFRC260-6X
IFRC254-5X
IFRC264-6X
IXTD40N30-7X
IRFC450-5X
IRFP260 equivalent
IXTD1N80-1T
irfp450 equivalent
Irfp250 irfp460
IRFP460 equivalent
IXTD05N100-1T
x315
IRFP254 equivalent
|
Untitled
Abstract: No abstract text available
Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details PRMAC-6X Product Details Quick Links Military/Aerospace High Performance Relays
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION DATE 09/01/2006 SOLID STATE RELAY - MOSFET OUTPUT NO.62M20009 REV. cosmo KAQW216S ELECTRONICS CORPORATION 1 SHEET 1 OF 7 OUTSIDE DIMENSION e d o C e t a D SX 6X 1X 2 W 8 . 9 4 . 4 5 . 00 3 . 2 Unit mm Tolerance 4 5 . 2 . x a M 5 3 . 2
|
Original
|
PDF
|
62M20009
KAQW216S
62M20009
|
Untitled
Abstract: No abstract text available
Text: PRMAC-6X Product Details Military/Ae rospace High Pe rform an ce Re lays Not reviewed for RoHS Compliance Previous 1 . 11 12 13 14 [15] . 20 Next Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product
|
Original
|
PDF
|
|
KAQW216S
Abstract: w216s kaqw216
Text: PRODUCT SPECIFICATION DATE：09/01/2006 cosmo SOLID STATE RELAY - MOSFET OUTPUT NO.62M20009 REV. KAQW216S ELECTRONICS CORPORATION SHEET 1 OF 7 1 OUTSIDE DIMENSION︰ e d o C e t a D SX 6X 1X 2 W 8 . 9 4 . 4 5 0. +- 3 . 2 4 . 3 . 5 . . x a M 5 3 . 2 Unit︰mm
|
Original
|
PDF
|
DATE09/01/2006
62M20009
KAQW216S
50mAat
62M20009
KAQW216S
w216s
kaqw216
|
F7101
Abstract: EIA-541 IRF7101
Text: IRF7470PbF SO-8 Package Outline Dimensions are shown in millimeters inches D 5 A 8 7 6 6X 2 3 MIN .0532 .0688 1.35 1.75 A1 .0040 0.25 .0098 0.10 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC
|
Original
|
PDF
|
IRF7470PbF
EIA-481
EIA-541.
F7101
EIA-541
IRF7101
|
F7101
Abstract: IRF7101 EIA-541
Text: IRF7469PbF SO-8 Package Outline Dimensions are shown in millimeters inches D 5 A 8 7 6 6X 2 3 MIN .0532 .0688 1.35 1.75 A1 .0040 0.25 .0098 0.10 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC
|
Original
|
PDF
|
IRF7469PbF
EIA-481
EIA-541.
F7101
IRF7101
EIA-541
|
F7101
Abstract: EIA-541 IRF7101
Text: IRF7471PbF SO-8 Package Outline Dimensions are shown in millimeters inches D 5 A 8 7 6 6X 2 3 MIN .0532 .0688 1.35 1.75 A1 .0040 0.25 .0098 0.10 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC
|
Original
|
PDF
|
IRF7471PbF
EIA-481
EIA-541.
F7101
EIA-541
IRF7101
|
EIA-541
Abstract: F7101 IRF7101
Text: PD- 95731 IRF7452PbF Lead-Free 1 IRF7452PbF 2 IRF7452PbF SO-8 Package Outline Dimensions are shown in millimeters inches D 5 A 8 7 6 5 6 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 6X e1 .0098 0.10 0.25 .013 .020 0.33 0.51 c .0075 .0098
|
Original
|
PDF
|
IRF7452PbF
EIA-481
EIA-541.
EIA-541
F7101
IRF7101
|
F7101
Abstract: jedec package standards so8 EIA-541 IRF7101
Text: IRF7488PbF SO-8 Package Outline Dimensions are shown in millimeters inches D 5 A 8 7 6 5 6 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 6X e1 .0098 0.10 0.25 .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574
|
Original
|
PDF
|
IRF7488PbF
EIA-481
EIA-541.
F7101
jedec package standards so8
EIA-541
IRF7101
|
resistor 2012
Abstract: IRF7821 lmk107bj105ma GMK316BJ105ML IRF7832 JMK212BJ475MG JMK432BJ107MU MAX8538 2.2nF X5R 1206 6dl2
Text: 10.8V to 13.2V VIN VL D1 C2 10uF 25V X5R 2x 1.25V @8A VOUT2 N2 IRF7821 R1 0.02 0.5W L2 0.6uH N4 IRF7832 R21 1.5 0.5W C11 100uF 6V X5R (6x) R2 1.21k C5 0.1uF C8 10pF C39 2.2nF D2 1 BST2 BST1 28 2 DH2 DH1 27 3 LX2 U1 MAX8538 LX1 26 4 ILIM2 ILIM1 25 6 DL2 DL1 23
|
Original
|
PDF
|
IRF7821
IRF7832
100uF
MAX8538
700kHz)
20MHz
10mVpp
R23105MA
220pF
100mA
resistor 2012
IRF7821
lmk107bj105ma
GMK316BJ105ML
IRF7832
JMK212BJ475MG
JMK432BJ107MU
MAX8538
2.2nF X5R 1206
6dl2
|
|
|
6X MOSFET
Abstract: NCP304 NUS1204MN
Text: NUS1204MN Product Preview Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to
|
Original
|
PDF
|
NUS1204MN
NCP304
NUS1204MN/D
6X MOSFET
|
6x fet
Abstract: NUS1204MN NCP304 battery charger NCP304 NUS1204MNT1G 100 6x DIODE 47-25 l
Text: NUS1204MN Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and
|
Original
|
PDF
|
NUS1204MN
NCP304
NUS1204MN/D
6x fet
NUS1204MN
NCP304 battery charger
NUS1204MNT1G
100 6x
DIODE 47-25 l
|
ovp ic
Abstract: NUS1204MN
Text: NUS1204MN Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and
|
Original
|
PDF
|
NUS1204MN
NCP304
NUS1204MN/D
ovp ic
|
MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11
Text: PMPB20UN 20 V, single N-channel Trench MOSFET 12 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
|
Original
|
PDF
|
PMPB20UN
DFN2020MD-6
OT1220)
MOSFET TRANSISTOR SMD MARKING CODE A1
MOSFET TRANSISTOR SMD MARKING CODE 11
|
Untitled
Abstract: No abstract text available
Text: NTLJF1103P Product Preview Power MOSFET and Schottky Diode −8 V, −4.3 A, mCool] P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, WDFN Package http://onsemi.com MOSFET Features V BR DSS RDS(on) Max −8 V 120 mW @ −2.5 V • WDFN 2x2 mm Package with Exposed Drain Pad for
|
Original
|
PDF
|
NTLJF1103P
NTLJF1103P/D
|
5M MARKING CODE SCHOTTKY DIODE
Abstract: NTLJF3118N
Text: NTLJF3118N Product Preview Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET • WDFN 2x2 mm Package Provides Exposed Drain Pad for • • • • • 70 mW @ 4.5 V
|
Original
|
PDF
|
NTLJF3118N
SC-88
NTLJF3118N/D
5M MARKING CODE SCHOTTKY DIODE
NTLJF3118N
|
Untitled
Abstract: No abstract text available
Text: NTLUD3191PZ Product Preview Power MOSFET −20 V, −1.8 A, mCoolt Dual P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features http://onsemi.com • UDFN Package with Exposed Drain Pads for Excellent Thermal • • • • Conduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
|
Original
|
PDF
|
NTLUD3191PZ
NTLUD3191PZ/D
|
Untitled
Abstract: No abstract text available
Text: Reduce GSM B attery Peak C urrent by 6x The MAX1687/MAX1688^ step -u p DC-DC converters deliver 2W from a single Li+ cell or three NiCd cells. Their control scheme is optimized for applications requiring short, high-current b u rs ts such a s GSM h an d sets and wireless
|
OCR Scan
|
PDF
|
MAX1687/MAX1688^
1687/M
MAX1674
MAX1675
500mA
MAX1676
500mA)
|
MIP30N03A
Abstract: No abstract text available
Text: w w w .fairchildsem i.com S E M I C O N D U C T O R tm RC5041 Pr ogr ammabl e DC-DC Conver t er for Penti um P55C, K6 , and 6x 86MX™ M2 Processors Features Applications • Programmable power supply for P54C, P55C, K6, and M2 based CPU motherboards
|
OCR Scan
|
PDF
|
RC5041
RC5041
DS30005041
MIP30N03A
|
Untitled
Abstract: No abstract text available
Text: w w w .fairchildsem i.com S E M I C O N D U C T O R tm RC5041 Pr ogr ammabl e DC-DC Conver t er for Penti um P55C, K6 , and 6x 86MX™ M2 Processors Features Applications • Programmable power supply for P54C, P55C, K6, and M2 based CPU motherboards
|
OCR Scan
|
PDF
|
RC5041
RC5041
DS30005041
|
