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    6R520P

    Abstract: IPA60R520CP JESD22 mosfet d38
    Text: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R520CP PG-TO220 6R520P 6R520P IPA60R520CP JESD22 mosfet d38

    6r520

    Abstract: No abstract text available
    Text: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R520CP PG-TO220 6R520P 6r520

    Untitled

    Abstract: No abstract text available
    Text: IPB60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R520CP PG-TO263 6R520P

    6R520P

    Abstract: IPP60R520CP JESD22 PG-TO220-3
    Text: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R520CP PG-TO220 6R520P 6R520P IPP60R520CP JESD22 PG-TO220-3

    Untitled

    Abstract: No abstract text available
    Text: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R520CP PG-TO220 6R520P

    IPA60R520CP

    Abstract: No abstract text available
    Text: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R520CP PG-TO220 6R520P IPA60R520CP

    Untitled

    Abstract: No abstract text available
    Text: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R520CP PG-TO220 6R520P

    6R520P

    Abstract: IPD60R520CP JESD22 smd transistor ISS d38 marking transistor SMD TRANSISTOR MARKING Dd
    Text: IPD60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPD60R520CP PG-TO252 6R520P 6R520P IPD60R520CP JESD22 smd transistor ISS d38 marking transistor SMD TRANSISTOR MARKING Dd

    IPI60R520CP

    Abstract: JESD22 6R520P
    Text: IPI60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R520CP PG-TO262 6R520P IPI60R520CP JESD22 6R520P

    IPB60R520CP

    Abstract: JESD22 SMD TRANSISTOR MARKING Dd 6R520P
    Text: IPB60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R520CP PG-TO263 6R520P IPB60R520CP JESD22 SMD TRANSISTOR MARKING Dd 6R520P