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    6R29 Price and Stock

    JST Manufacturing A06XSR06XSR36R295A

    JUMPER HARNESS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A06XSR06XSR36R295A Bulk 1,150 1
    • 1 $3.45
    • 10 $3.135
    • 100 $2.7623
    • 1000 $2.00269
    • 10000 $1.86457
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    JST Manufacturing A10XSR10XSR36R295A

    JUMPER 10XSR-36S - 10XSR-36S 11.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A10XSR10XSR36R295A Bulk 897 1
    • 1 $5.48
    • 10 $4.978
    • 100 $4.3858
    • 1000 $3.17968
    • 10000 $2.96039
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    JST Manufacturing A10XSR10XSR36R295B

    JUMPER 10XSR-36S - 10XSR-36S 12"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A10XSR10XSR36R295B Bulk 427 1
    • 1 $5.48
    • 10 $4.978
    • 100 $4.3858
    • 1000 $3.83756
    • 10000 $3.83756
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    JST Manufacturing A06XSR06XSR36R295B

    JUMPER 06XSR-36S - 06XSR-36S 12"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A06XSR06XSR36R295B Bulk 263 1
    • 1 $3.45
    • 10 $3.135
    • 100 $2.7623
    • 1000 $2.00269
    • 10000 $1.86457
    		Buy Now

    JST Manufacturing A02XSR02XSR36R295B

    JUMPER 02XSR-36S - 02XSR-36S 12"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A02XSR02XSR36R295B Bulk 131 1
    • 1 $2.16
    • 10 $1.879
    • 100 $1.679
    • 1000 $1.1993
    • 10000 $1.06338
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    Find more 6R29 price and stock on Findchips.com

    6R29 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6r299p

    Abstract: 6r299
    Text: IPA60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R299CP PG-TO220-3-31 SP000096438 6R299P 6r299p 6r299

    6r299p

    Abstract: SP000103251 IPW60R299CP CoolMOS Power Transistor JESD22 DS1058
    Text: IPW60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R299CP PG-TO247-3-1 SP000103251 6R299P 6r299p SP000103251 IPW60R299CP CoolMOS Power Transistor JESD22 DS1058

    IPL60R299CP

    Abstract: 6R299P ipl60r JESD22 6R29
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R299CP 150mm² IPL60R299CP 6R299P ipl60r JESD22 6R29

    6r299p

    Abstract: IPW60R299CP SP000103251 JESD22 6R29 6r299
    Text: IPW60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R299CP PG-TO247-3 SP000103251 6R299P 6r299p IPW60R299CP SP000103251 JESD22 6R29 6r299

    6R299P

    Abstract: 6r299 PG-TO-220-3-1 PG-TO220-3-1 IPP60R299CP JESD22 SP000084280 INFINEON transistor IPP60R299
    Text: IPP60R299CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R299CP PG-TO220-3-1 SP000084280 6R299P 6R299P 6r299 PG-TO-220-3-1 PG-TO220-3-1 IPP60R299CP JESD22 SP000084280 INFINEON transistor IPP60R299

    EL series SMD transistor

    Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description


    Original     		PDF IPL60R299CP 150mm² EL series SMD transistor 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299

    6R299P

    Abstract: IPP60R299CP INFINEON transistor IPP60R299 IPP60R299 JESD22 SP000084280 6r299
    Text: IPP60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R299CP PG-TO220 SP000084280 6R299P 6R299P IPP60R299CP INFINEON transistor IPP60R299 IPP60R299 JESD22 SP000084280 6r299

    6R299A

    Abstract: 6r299 IPB60R099CPA IPC60R075 IPC60R075CPA IPB60R199CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R299CPA
    Text: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS V 0.299 Ω R DS on ,max 22 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPB60R299CPA PG-TO263-3 6R299A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 6R299A 6r299 IPB60R099CPA IPC60R075 IPC60R075CPA IPB60R199CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R299CPA

    6r299p

    Abstract: PG-TO220FP IPA60R299CP 6r299
    Text: IPA60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R299CP PG-TO220FP SP000096438 6R299P 6r299p PG-TO220FP IPA60R299CP 6r299

    6R299P

    Abstract: IPL60R299CP 6r299 g1 smd diode
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.1, 2012-01-10 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R299CP 150mm² 6R299P IPL60R299CP 6r299 g1 smd diode

    6R299P

    Abstract: 6R250P 6r299 6R250 IPA60R250CP 2500VA JESD22 PG-TO220-3-31 CoolMOS Power Transistor
    Text: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R250CP PG-TO220 PG-TO220FP 6R250P 6R299P 6R299P 6R250P 6r299 6R250 IPA60R250CP 2500VA JESD22 PG-TO220-3-31 CoolMOS Power Transistor

    6r299p

    Abstract: PG-TO247-3-1 TRANSISTOR marking ar code 6R229PIPW60R299CP IPW60R299CP 6r299 JESD22 SP000103251
    Text: IPW60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R299CP PG-TO247-3-1 SP000103251 6R299P 6r299p PG-TO247-3-1 TRANSISTOR marking ar code 6R229PIPW60R299CP IPW60R299CP 6r299 JESD22 SP000103251

    6R299P

    Abstract: 6r299 6R229PIPW60R299CP 6R299P tO247 IPW60R299CP PG-TO-247-3 JESD22 SP000103251 R/6R299P tO247
    Text: IPW60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R299CP PG-TO247-3 SP000103251 6R299P 009-134-A O-247 6R299P 6r299 6R229PIPW60R299CP 6R299P tO247 IPW60R299CP PG-TO-247-3 JESD22 SP000103251 R/6R299P tO247

    6r299p

    Abstract: SP000103251 IPW60R299CP
    Text: IPW60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R299CP PG-TO247 SP000103251 6R299P 6r299p SP000103251 IPW60R299CP

    ipl60r

    Abstract: 6R299P 600V/6R299P
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.1, 2010-06-28 Preliminary Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description Pr The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R299CP 150mm² ipl60r 6R299P 600V/6R299P

    Diode SMD ED 98

    Abstract: diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED me smd transistor
    Text: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS 0.299 Ω R DS on ,max 22 Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features V nC • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPB60R299CPA 6R299A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 Diode SMD ED 98 diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED me smd transistor

    6R299P

    Abstract: IPP60R299CP JESD22 SP000084280 DS1058 CoolMOS Power Transistor
    Text: IPP60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R299CP PG-TO220 SP000084280 6R299P 6R299P IPP60R299CP JESD22 SP000084280 DS1058 CoolMOS Power Transistor

    6R299P

    Abstract: 6r299 CoolMOS Power Transistor IPP60R299CP JESD22 SP000084280 IPP60R299 6R29
    Text: IPP60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R299CP PG-TO220 SP000084280 6R299P 6R299P 6r299 CoolMOS Power Transistor IPP60R299CP JESD22 SP000084280 IPP60R299 6R29

    6r299

    Abstract: 6R250P 6R299P
    Text: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R250CP PG-TO220 PG-TO220FP 6R250P 6R299P 6r299 6R250P 6R299P

    6R299P

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.1, 2012-01-10 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R299CP 150mm 6R299P

    6R299P

    Abstract: 6r299 IPP60R299CP IPP60R299 JESD22 SP000084280 INFINEON transistor IPP60R299 D44 MARKING CODE
    Text: IPP60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R299CP PG-TO220 SP000084280 6R299P 6R299P 6r299 IPP60R299CP IPP60R299 JESD22 SP000084280 INFINEON transistor IPP60R299 D44 MARKING CODE

    6R299P

    Abstract: 6r299 PG-TO220FP IPA60R299CP JESD22 SP000096438 PG-TO220-FP CoolMOS Power Transistor 6R29
    Text: IPA60R299CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R299CP PG-TO220FP SP000096438 6R299P 6R299P 6r299 PG-TO220FP IPA60R299CP JESD22 SP000096438 PG-TO220-FP CoolMOS Power Transistor 6R29

    6R299P

    Abstract: No abstract text available
    Text: IPA60R250CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.250 Ω R DS on ,max@T j= 25°C • Ultra low gate charge Q g,typ V 6.6 26 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R250CP PG-TO220 PG-TO220FP 6R250P 6R299P 6R299P

    6r299p

    Abstract: 6r299 IPA60R299CP PG-TO220-3-31 JESD22 SP000096438 6R29
    Text: IPA60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R299CP PG-TO220-3-31 SP000096438 6R299P 6r299p 6r299 IPA60R299CP PG-TO220-3-31 JESD22 SP000096438 6R29