RM7000C
Abstract: RM7000A-300T AC13 MCM69T618 RM5200 RM5271 RM7000 RM7000A RM7000C Microprocessor with On-Chip Secondary Cache
Text: 8: 22 AM RM7000A Microprocessor with On-chip Secondary Cache Data Sheet Released Mo nd ay ,0 6J an ua ry ,2 00 3 03 :2 RM7000A™ Data Sheet Preliminary Issue No. 5: August 2002 Do wn lo ad ed by ah m ed m et wa ly of sil ico ne xp er to n Microprocessor with
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RM7000ATM
RM7000ATM
PMC-2002227,
M7000A-300T
RM7000A-350T
RM7000A-400T
RM7000A-350TI
RM7000C
RM7000A-300T
AC13
MCM69T618
RM5200
RM5271
RM7000
RM7000A
RM7000C Microprocessor with On-Chip Secondary Cache
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RM7000-263S
Abstract: via 266t R4000 R4650 R4700 R5000 RM5200 RM5271 RM7000 RM7000A
Text: 03 :2 7: 00 AM RM7000 Microprocessor with On-Chip Secondary Cache Datasheet Released to n Mo nd ay ,0 6J an ua ry ,2 00 3 RM7000 Datasheet Proprietary and Confidential Issue 1, January 2001 Do wn l oa de d by ah m ed m et wa ly of sil ico ne xp er RM7000™ Microprocessor with On-Chip
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RM7000TM
RM7000
PMC-2002175,
cRM7000-250S
RM7000-250T
RM7000-263S
RM7000-266T
RM7000-300T
RM7000-263S
via 266t
R4000
R4650
R4700
R5000
RM5200
RM5271
RM7000
RM7000A
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Untitled
Abstract: No abstract text available
Text: 11 :4 4: 22 PM DualPHY 1G ASSP Telecom Standard Product Data Sheet Released 6J an ua ry ,2 01 2 PM8374A co n Mo nd ay ,1 DualPHY 1G Data Sheet Released Issue No. 1: May 2004 Do wn lo ad ed [c on tro lle d] by Co nt en tT ea m of Pa rtm in er In 2 CHANNEL PHYSICAL LAYER TRANSCEIVER WITH
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PM8374A
PMC-2040227,
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M3-12H
Abstract: SMD FUSE 140D pmc-2001578 179d 203d 332h b4 109d PMC-2020180 312H PM4318
Text: :4 4: 11 AM Octal E1/T1/J1 Line Interface Device Telecom Standard Product Data Sheet Released ua ry ,2 00 3 05 PM4318 Mo nd ay ,0 6J an OCTLIU Data Sheet Proprietary and Confidential Released Issue No. 6: May 2002 Do wn lo ad ed by ah m ed m et wa ly of sil
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PM4318
PMC-2001578,
MO-192,
M3-12H
SMD FUSE 140D
pmc-2001578
179d
203d
332h
b4 109d
PMC-2020180
312H
PM4318
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Untitled
Abstract: No abstract text available
Text: :3 7: 32 AM COMET TETRA Register Descriptions Document Released ,0 6J ul y, 20 06 03 PM4359 Th ur sd ay COMET TETRA of Pa rtm in er In co n FOUR-CHANNEL COMBINED T1/J1/E1 TRANSCEIVER/FRAMER Released Issue No. 2: June, 2006 Do wn lo ad ed by Co nt e nt T ea
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PM4359
PMC-2051823,
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UA SH 105D
Abstract: 179d 332h b4 109d c4,c5 sbi application forms Nippon 81D sh 105d PM4319 TE-32 DP 704 C
Text: :0 7: 43 AM Octal Short-Haul E1/T1/J1 Line Interface Device Telecom Standard Product Data Sheet Released Mo nd ay ,0 6J an OCTLIU-SH ua ry ,2 00 3 06 PM4319 Data Sheet Proprietary and Confidential Released Issue No. 3: May 2002 Do wn lo ad ed by ah m ed m
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PM4319
PMC-2012568,
MO-192,
UA SH 105D
179d
332h
b4 109d
c4,c5 sbi application forms
Nippon 81D
sh 105d
PM4319
TE-32
DP 704 C
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sfh g15
Abstract: BGA256 PI5X1018 diode v6 N9
Text: PI5X1018
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PI5X1018
18-Bit,
10-Port
10-way
Ultra4321
256-Pin
50Max.
PI5X1018NA
NA256)
PS8365E
sfh g15
BGA256
PI5X1018
diode v6 N9
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F4-75R12MS4
Abstract: No abstract text available
Text: Technische Information / technical information F4-75R12MS4 IGBT-Module IGBT-modules EconoDUAL Modul mit schnellem IGBT2 für hochfrequentes Schalten EconoDUAL™ module with fast IGBT2 for high switching frequency IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data
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F4-75R12MS4
F4-75R12MS4
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Untitled
Abstract: No abstract text available
Text: Technical Information ModSTACK HD 6MS20017E43W37032 Preliminary data General information IGBT Stack for typical voltages of up to 690 VRMS Rated output current 1200 ARMS 6 !61C"326CD32F32 6#561C"32 6$CFC2652D3 6 6%2&3%A' $6&C536"F!6F3 24F356*)'6
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6MS20017E43W37032
D32F32
CFC2652
24F356*
5356C1324F
1324F
-C456F813
FC2630
D32F32623
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ana 618 equivalent
Abstract: B4326 OEA101
Text: Technical Information ModSTACK HD 6MS20017E43W38170 Preliminary data General information IGBT Stack for typical voltages of up to 690 VRMS Rated output current 1200 ARMS 6 !"61C#326CD3232 6B561C#32 6$CC2652D3 6 6%2&3%E' $*6&C536#"63!24356+)'6
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6MS20017E43W38170
C2652
5356C1324
1231423567896AB
4112CD3567896EF
ana 618 equivalent
B4326
OEA101
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LTC4098-3.6
Abstract: A20-LCD15.6 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS75B12N3E4
428654F4
D3265
ECFC24
B32DC
CD3289
ECFC26
B32DC6
C36B3
1231423567896AB
LTC4098-3.6
A20-LCD15.6
SXA-01GW-P0.6
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diode F4 6A
Abstract: 4F36F123
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS100B12N3E4
428654F4
D3264
ECFC24
B32DC
D3692C
CD3288
ECFC26
B32DC6
6934F
diode F4 6A
4F36F123
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Untitled
Abstract: No abstract text available
Text: ÂV A N T E K Q INC a v a 44E D n t e El 1141%!= 0DQÔ07S T BIAVA U T O /U T C 1511 S eries T h in -F ilm C a s c a d a b ie A m p lifie r 5 to 1500 M H z k FEATURES APPLICATIONS • Frequency Range: 5 to 1500 MHz • Noise Figure: 3 .5 d B T y p • Low Power Consumption
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Untitled
Abstract: No abstract text available
Text: STANDISH/STANBISH L C D SOE D 6564748 0000D7D 4T1 HAfl PIN-OUT A SSIG NM ENT Pin-out sequences begin with the first pin located in the lower left corner of the LCD and continue to the right, with the last pin number in the top left corner. Digits are numbered from right to left. BP COM = Backplane (common) Electrode
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0000D7D
MODEL3933
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Standish LCD
Abstract: C107J 6BP33 C535B 7 segment 14-pin c272g C145A AC121G BAR19 lcd messi
Text: STANDISH/STANDISH 5 0 E ] • ÔS6M7MÛ 0000070 ' T W - 3 & MT1 P IN -O U T A S S IG N M E N T Pin-out sequences begin with the first pin located in the lower left corner of the LCD and continue to the right, with the last pin num ber in the top left corner. Digits are
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0000D70
Bar35
Bar85
Bar97
Standish LCD
C107J
6BP33
C535B
7 segment 14-pin
c272g
C145A
AC121G
BAR19
lcd messi
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d331
Abstract: 2Sd331 sanyo b514 B514 d331 tr sanyo D330 D331 PNP 2SB515D D331 NPN gat6
Text: SANYO SEMICONDUCTOR CORP 2SB514, 515 15E ]> I 2SD330, . 331 0003^00 1 j PNP/npn Triple D iffu sed P lan a r S ilic o n T ra n sisto rs ' 2oioa 7 ci ci ? D 7 b 2012 Low Frequency Power Amp Applications 3970 Especially suited for use in output stage of 10W AF Power amp.
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2SB514,
2SD330,
2SB514
IS-20MA
IS-313
IS-313A
d331
2Sd331
sanyo b514
B514
d331 tr
sanyo D330
D331 PNP
2SB515D
D331 NPN
gat6
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Pin diagram of CD4021
Abstract: CD4021
Text: SflE D m 4 3 D 2 2 7 1 □ □ 4 4 5 2 b 4fl0 45 ill HARRIS S E M I C O N D U C T O R H A RR IS SEI1IC0ND S E CT OR CD4014BMS CD4021BMS -F4k-CR-Ö5 CMOS 8-Stage Static Shift Registers December 1992 Features Description • High Voltage Types 20V Rating CD4014BMS -Synchronous Parallel or Serial Input/Serial Output
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CD4014BMS
CD4021BMS
CD4021BMS
stages723
CD4014BMS,
D4014QH
Pin diagram of CD4021
CD4021
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Untitled
Abstract: No abstract text available
Text: a HM-6518/883 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 1 C M O S R A M Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. he HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated
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HM-6518/883
MIL-STD883
HM-6518/883
20mW/MHz
180ns
100kHz
H3DB271
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HD-6409
Abstract: No abstract text available
Text: HD-6409/883 HARRIS S E M I C O N D U C T O R CMOS Manchester Encoder-Decoder August 1996 Features • Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HD-6409/883 Manchester Encoder-Decoder MED is a
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HD-6409/883
MIL-STD883
HD-6409/883
47ki2
100kHz
F0/16
43G2271
HD-6409
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sxxxx
Abstract: No abstract text available
Text: æ H A « « H M - 6 5 2 2 /8 8 3 16K x 1 Asynchronous CMOS Static RAM January 1992 Features • 6 Pinouts This Circuit Is Processed In Accordance to Mtl-Std-883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. HM1-65262/883 CERAMIC DIP
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HM1-65262/883
Mtl-Std-883
7CV85nsMax
HM-65262/883
MIL-M38510
MIL-STD-1835,
GDIP1-T20
L-M38510
sxxxx
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44c256
Abstract: TM256KBK36B J 262
Text: TM256KBK36B 262 144 BY 36-BIT DYNAMIC RAM MODULE TM512LBK36B 524 288 BY 36-BIT DYNAMIC RAM MODULE S M M S 236 — JANUARY 1991 TM256KBK36B . . . 262 144 Organization x Enhanced Page Mode Operation With CAS-Before-RAS, RAS-Only, and Hidden Refresh 36 TM512LBK36B . . . 524 288 x 36
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TM256KBK36B
36-BIT
TM512LBK36B
TM256KBK36B
TM512LBK36B
72-pin
44c256
J 262
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SMD Code 12W SOT-23
Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
Text: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED
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OT-23
350mW
CMPT2222A
CMPT2369
CMPT24
CMPT2907A
CMPT3640
CMPT3646
CMFT3904
CMPT3906
SMD Code 12W SOT-23
CXT5401 BK
SMD MARKING CODE 4E
C2TA44
SMD MARKING CODE FE sot89
marking code C3E SOT-89
npn smd bc550 smd
SMD Code 12W SOT23
marking BH SOT-223
marking da sot89
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TIL 220
Abstract: 4737B f4737
Text: HEF4737B HEF4737V LSI QUADRUPLE STATIC DECADE COUNTERS The H E F 4737B and H E F 4 7 3 7 V are sta tic q u a dru p le decade counters fo r frequencies fro m 0 to 10 MHz. The counters are supplied w ith an extra overload flip - flo p giving a to ta l c o u n t c a p a b ility o f 19 999.
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HEF4737B
HEF4737V
4737B
TIL 220
f4737
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Untitled
Abstract: No abstract text available
Text: HM-65262/883 S 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Ran
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HM-65262/883
MIL-STD883
HM-65262/883
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