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    6C-5 28 TRANSISTOR Search Results

    6C-5 28 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    6C-5 28 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N43a

    Abstract: 2N43A DATASHEET 2N44A 2N43A equivalent 2n44a jan
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 1999. INCH-POUND MIL-PRF-19500/6C 1 March 1999 SUPERSEDING MIL-S-19500/6B 28 December 1971 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP,


    Original     		PDF MIL-PRF-19500/6C MIL-S-19500/6B 2N43AZ1, 2N43AZ2, 2N44AZ1 2N44AZ2 MIL-PRF-19500. 2N43a 2N43A DATASHEET 2N44A 2N43A equivalent 2n44a jan

    transistor f613

    Abstract: transistor bc 567
    Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.


    Original     		PDF AO4604 AO4604 AO4604L -AO4604L 16789ABA2CDE9AFDC transistor f613 transistor bc 567

    ZX6T9M522

    Abstract: SOT23 MARK PD sot236 651 DUAL NPN SOT23-6
    Text: Advanced Products Generation 6 Dual Die Transistors in SOT23-6 Part Polarity VCEO IC PD hFE V A W Min VCE sat Max mV at IC at IC A RCE(sat) at IB mA Part Mark m ZX6TDNE6 2x NPN 9 4.5 1.1 500 0.2 45 1 100 22 6NN ZX6TD9E6 2x PNP -9 -4.5 1.1 500 -0.01 -45 -1


    Original     		PDF OT23-6 ZXT849 ZXT690B ZXT1053A ZXT790A ZXT951 ZXT953 ZX6T9M522 SOT23 MARK PD sot236 651 DUAL NPN SOT23-6

    Untitled

    Abstract: No abstract text available
    Text: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 DTA144E/D

    Untitled

    Abstract: No abstract text available
    Text: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 DTA144E/D

    Untitled

    Abstract: No abstract text available
    Text: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 DTA144E/D

    SOt323 marking code 6X

    Abstract: MUN5111T1 MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G
    Text: MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF MUN5111T1 SC-70/SOT-323 MUN5111T1/D SOt323 marking code 6X MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G

    marking 6C

    Abstract: SMUN
    Text: MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 DTA144E/D marking 6C SMUN

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: BC807 BC817 BC817-16 BC817-25 BC817-40
    Text: SEMICONDUCTOR BC817 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D 3 H G A 2 1 MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage


    Original     		PDF BC817 Transistor hFE CLASSIFICATION Marking CE BC807 BC817 BC817-16 BC817-25 BC817-40

    MUN5111T1

    Abstract: MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G SOt323 marking code 6X
    Text: MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias


    Original     		PDF MUN5111T1 SC-70/SOT-323 MUN5111T1/D MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G SOt323 marking code 6X

    BC817

    Abstract: BC807 BC817-16 BC817-25 BC817-40 marking 6c sot-23
    Text: Pb BC817-16 BC817-25 BC817-40 RoHS COMPLIANCE 0.3 Watts NPN Plastic-Encapsulate Transistors SOT-23 Features — — — — — Ideally suited for automatic insertion Epitaxial planar die construction For switching, AF driver and amplifier applications Complementary PNP type available BC807


    Original     		PDF BC817-16 BC817-25 BC817-40 OT-23 BC807) AEC-Q101 OT-23, J-STD-020C MIIL-STD-202, BC817-16, BC817 BC807 BC817-16 BC817-25 BC817-40 marking 6c sot-23

    BC817

    Abstract: BC807 BC817-16 BC817-25 BC817-40
    Text: Pb BC817-16 BC817-25 BC817-40 RoHS COMPLIANCE 0.3 Watts NPN Plastic-Encapsulate Transistors SOT-23 Features — — — — — Ideally suited for automatic insertion Epitaxial planar die construction For switching, AF driver and amplifier applications Complementary PNP type available BC807


    Original     		PDF BC817-16 BC817-25 BC817-40 OT-23 BC807) AEC-Q101 OT-23, J-STD-020C MIIL-STD-202, BC817-16, BC817 BC807 BC817-16 BC817-25 BC817-40

    EP5S

    Abstract: No abstract text available
    Text: User's Manual User's Manual: Hardware M16C/6C Group 16 User’s Manual: Hardware RENESAS MCU M16C Family / M16C/60 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by Renesas Electronics


    Original     		PDF M16C/6C M16C/60 R01UH0138EJ0210 EP5S

    "application notes" ULN2803a

    Abstract: No abstract text available
    Text: ULN2803A DARLINGTON TRANSISTOR ARRAY SLRS049B − FEBRUARY1997 − REVISED OCTOBER 2003 D 500-mA Rated Collector Current Single D D D D D DW PACKAGE (TOP VIEW Output) High-Voltage Outputs . . . 50 V Output Clamp Diodes Inputs Compatible With Various Types of


    Original     		PDF ULN2803A SLRS049B FEBRUARY1997 500-mA ULN2800A "application notes" ULN2803a

    2N6439

    Abstract: UT25 coaxial VK200 ferrite choke
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


    OCR Scan     		PDF 2N6439 Collector-B400 2N6439 UT25 coaxial VK200 ferrite choke

    BC807

    Abstract: BC817 BC817-16 BC817-25 BC817-40
    Text: SEMICONDUCTOR TECHNICAL DATA BC817 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BC807. DIM A B C D E G H J K L M N P MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


    OCR Scan     		PDF BC817 BC807. BC807 BC817 BC817-16 BC817-25 BC817-40

    transistor z5

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF653 Designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics


    OCR Scan     		PDF MRF653 MRF653 transistor z5

    BUT23

    Abstract: No abstract text available
    Text: { Z I SG STUO M SO N S^5 i IL [ieîi® iD © i BUT232V NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUT232V GC31990 GC14M BUT23

    KTC4021

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTC4021 EPITAXIAL PLANAR NPN TRANSISTOR TV TUNER, UHF OSCILLATOR APPLICATION. COMMON BASE TV TUNER, UHF CONVERTER APPLICATION.(COMMON BASE) FEATURES • High Transition Frequency : fT=1500MHz (Typ.). • Excellent I lfe Linearity.


    OCR Scan     		PDF KTC4021 1500MHz 100MHz KTC4021

    BUZ73

    Abstract: K 3911 transistor "" transistor T0220AB
    Text: N AMER PHILIPS/DISCRETE OL.E D • L,Li53cì31 0 0 1 4 4 5 0 FowerMUS transistor " 7 ■ BUZ73 T~ 37- j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ73 T0220AB; D0144b3 BUZ73 T-39-11 K 3911 transistor "" transistor T0220AB

    transistor d2624

    Abstract: transistor D 2624 mos transistor d2624 s036a DDT relay LN2004A IC ULN2003A application
    Text: ULN2001ATHRU ULN2004A DARLINGTON TRANSISTOR ARRAYS S L D S 0 3 6 A - D2624, DECEMBER 1976 - REVISED APR IL 1993 H IG H -V O LT A G E H IG H -C U R R E N T D A R L IN G T O N T R A N S IS T O R A R R A Y S 500-mA Rated Collector Current Single Output d o r n package


    OCR Scan     		PDF ULN2001ATHRU ULN2004A D2624, 500-mA ULN2001A ULN2001 ULN2002A, ULN2003A, transistor d2624 transistor D 2624 mos transistor d2624 s036a DDT relay LN2004A IC ULN2003A application

    78M0

    Abstract: stmicroelectronics diode sj transistor 6619 A982 l74m05 l78m
    Text: L78M00 SERIES POSITIVE VOLTAGE REGULATORS . OUTPUT CURRENT TO 0.5A . OUTPUT VOLTAGES OF 5; 6; 8; 9; 10; 12; 15; 18; 20; 24V . THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION The L78M00 series of three-terminal positive


    OCR Scan     		PDF L78M00 ISOWATT220, OT-82, OT-194 78M0 stmicroelectronics diode sj transistor 6619 A982 l74m05 l78m

    2SA1898

    Abstract: MARKING AN
    Text: Ordering number:EN 5049 _ 2SA1898 No.5049 PNP Epitaxial Planar Silicon Transistor DC/DC Converter A p p licatio n s • High-speed switching. F e a tu re s • Adoption of FBET and MBIT processes. • Large current capacity. •Low collector-to-emitter saturation voltage.


    OCR Scan     		PDF 2SA1898 250mm2 2SA1898 MARKING AN

    Untitled

    Abstract: No abstract text available
    Text: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 001420b BLY93A r3774