TDB6HK180N16RR
Abstract: 6a65
Text: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3
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TDB6HK180N16RR
CEF36"
3BC1322C14BB
32C36
36423B
4256E
D6345
6423B
36423B
6a65
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF400R12KT3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit schnellem Trench/Feldstop IGBT3 und EmCon High Efficiency Diode 62mm C-series module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
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FF400R12KT3
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diode a15a
Abstract: diode 6a6 diode A14A diode P600A 1N4004 bridge rectifier 70HF120 85hf120 25F80 6AO5 A14P
Text: Elite Semiconductor Products | Standard Recovory Diodes & Rectifiers Data Sheets and Samples Available Upon Request CLICK HERE Home | Contact Us | Bridge Rectifiers | Diodes | Fast recovery Diodes | Rectifiers Schottky Rectifiers | Standard Recovery Diodes | Thyristors | Transient Voltage | Suppressors | Triacs
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1N1183A
1N1184A
1N1185A
1N1186A
1N1187A
1N1188A
1N1189A
1N1190A
DO-203AB
1N2128A
diode a15a
diode 6a6
diode A14A
diode P600A
1N4004 bridge rectifier
70HF120
85hf120
25F80
6AO5
A14P
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6AO5
Abstract: diode A14A diode a15a DO-203AB 6F40 diode al5N 85hf120 1N4004 or 1N5404 25F80 A14F
Text: Elite Semiconductor Products | Standard Recovory Diodes & Rectifiers Data Sheets and Samples Available Upon Request CLICK HERE Home | Contact Us | Bridge Rectifiers | Diodes | Fast recovery Diodes | Rectifiers Schottky Rectifiers | Standard Recovery Diodes | Thyristors | Transient Voltage | Suppressors | Triacs
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1N1183A
1N1184A
1N1185A
1N1186A
1N1187A
1N1188A
1N1189A
1N1190A
DO-203AB
1N2128A
6AO5
diode A14A
diode a15a
DO-203AB
6F40 diode
al5N
85hf120
1N4004 or 1N5404
25F80
A14F
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diode a15a
Abstract: diode A14A 6A4 rectifier diode p600m DIODE A14F diode 6AO5 RGP15G diode 6A8 RECTIFIER DIODE diode P600A DIODE 1N5402 3a
Text: Elite Semiconductor Products | Diodes Data Sheets and Samples Available Upon Request CLICK HERE Home | Contact Us | Bridge Rectifiers | Diodes | Fast recovery Diodes | Rectifiers Schottky Rectifiers | Standard Recovery Diodes | Thyristors | Transient Voltage | Suppressors | Triacs
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
BR-25W
BR-25/
MB-25
diode a15a
diode A14A
6A4 rectifier diode
p600m DIODE
A14F diode
6AO5
RGP15G diode
6A8 RECTIFIER DIODE
diode P600A
DIODE 1N5402 3a
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SMBJ100D
Abstract: No abstract text available
Text: SMBJ5.0D thru SMBJ188D www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • ± 3.5 %, very tight VBR tolerance • Available in uni-directional
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SMBJ188D
DO-214AA
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SMBJ100D
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1741A LV5230BG Bi-CMOS IC 7chx17ch LED Driver Overview The LV5230BG is a dot-matrix LED driver IC for cell phones. Features • 7×17 dot-matrix LED driver 5×15 dot-matrix supported • Each dot can be set for display over the serial bus.
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ENA1741A
LV5230BG
LV5230BG
A1741-28/28
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10 35L DIODE 62h
Abstract: diode 10 35L B6 diode 10 35L C5 22 35L CAPacitor 44l3
Text: Ordering number : ENA1741 LV5230BG Bi-CMOS IC For cell phone Dot-matrix LED Driver Overview The LV5230BG is a dot-matrix LED driver IC for cell phones. Features • 7x17 dot-matrix LED driver 5×15 dot-matrix supported • Each dot can be set for display over the serial bus.
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ENA1741
LV5230BG
LV5230BG
A1741-28/28
10 35L DIODE 62h
diode 10 35L B6
diode 10 35L C5
22 35L CAPacitor
44l3
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LTC4098-3.6
Abstract: No abstract text available
Text: Technische Information / technical information FS75R17KE3 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values !3"B2 #CBB32 $132214DDD% 3B2 3CBB326B4%3
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FS75R17KE3
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
CBB326134
LTC4098-3.6
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diode 10 35L B7
Abstract: diode 10 35L E7 10 35L D5 DIODE
Text: Ordering number : ENA1741A LV5230BG Bi-CMOS IC 7chx17ch LED Driver http://onsemi.com Overview The LV5230BG is a dot-matrix LED driver IC for cell phones. Features • 7×17 dot-matrix LED driver 5×15 dot-matrix supported • Each dot can be set for display over the serial bus.
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ENA1741A
LV5230BG
LV5230BG
A1741-28/28
diode 10 35L B7
diode 10 35L E7
10 35L D5 DIODE
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diode 10 35L B6
Abstract: 10 35L DIODE 62h diode IO 35L diode 10 35L C5 10 35L DIODE matrix led drive diagram of LED matrix display LV5230BG SCROLLING LED DISPLAY CIRCUIT diagram 22 35L CAPacitor
Text: Ordering number : ENA1741A LV5230BG Bi-CMOS IC 7chx17ch LED Driver Overview The LV5230BG is a dot-matrix LED driver IC for cell phones. Features • 7×17 dot-matrix LED driver 5×15 dot-matrix supported • Each dot can be set for display over the serial bus.
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ENA1741A
LV5230BG
LV5230BG
A1741-28/28
diode 10 35L B6
10 35L DIODE 62h
diode IO 35L
diode 10 35L C5
10 35L DIODE
matrix led drive
diagram of LED matrix display
SCROLLING LED DISPLAY CIRCUIT diagram
22 35L CAPacitor
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diode 10 35L
Abstract: diode 10 35L E7 diode 10 35L B6
Text: Ordering number : ENA1741A LV5230BG Bi-CMOS IC 7chx17ch LED Driver Overview The LV5230BG is a dot-matrix LED driver IC for cell phones. Features • 7×17 dot-matrix LED driver 5×15 dot-matrix supported • Each dot can be set for display over the serial bus.
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ENA1741A
LV5230BG
LV5230BG
A1741-28/28
diode 10 35L
diode 10 35L E7
diode 10 35L B6
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ST1514
Abstract: 4070-SH-2 KC4-75k-3 HDR2X16 74hc14m Model-DS335 ECHU1H103JB5 CLC5602 74HC14 so14 DPS9245
Text: DPS9245EB Evaluation Board User’s Guide Contents 1 2 3 4 5 6 7 8 9 10 11 DB15-000193-00 Introduction Product and Applications Overview Driving the Analog Inputs 3.1 Differential Drive from a Differential Source 3.2 Single-Ended to Differential Configuration Using
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DPS9245EB
DB15-000193-00
DPS9245
16-Bit
DPS9245EB
ST1514
4070-SH-2
KC4-75k-3
HDR2X16
74hc14m
Model-DS335
ECHU1H103JB5
CLC5602
74HC14 so14
DPS9245
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Ge-RF
Abstract: R01US0015E R5F10AA
Text: 16 RL78/F13, F14 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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RL78/F13,
16-Bit
R01UH0368EJ0200
Ge-RF
R01US0015E
R5F10AA
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2-10R1C
Abstract: GT15J301 V200
Text: TOSHIBA GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 10 ±0.3 r The 3rd Generation ^3.2 ± 0.2 2.7±Q 2 < v> cn CO O Enhancement-Mode High Speed
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GT15J301
100a/jus
2-10R1C
GT15J301
V200
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67pA
Abstract: 6030B Thermalloy OPA548 spice model
Text: BURR - BROW N [ OPA548 1 www.burr-brown.com/databook/OPA548.html High-Voltage, High-Current OPERATIONAL AMPLIFIER DESCRIPTION FEATURES • WIDE SUPPLY RANGE Single Supply: +8V to +60V Dual Supply: ±4V to ±30V • HIGH OUTPUT CURRENT: 3A Continuous 5A Peak
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OPA548
com/databook/OPA548
T0-220
OPA548
67pA
6030B
Thermalloy
OPA548 spice model
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LT055
Abstract: potentiometer 10k surface KH U10 LT05 LF155A
Text: / T L i nTECHNOLOGY t A B _ LT1055/LT1056 Precision, High Speed, / JFET Input Operational Amplifiers F€flTUR€S DCSCRIPTIOn • Guaranteed Offset Voltage -5 5 ° C to 125°C ■ Guaranteed Drift 150|iV M ax The LT1055/LT1056 JFET input operational am plifiers
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LT1055/LT1056
150pA
500pA
150nV
LT105V56
254mm)
LT055
potentiometer 10k surface
KH U10
LT05
LF155A
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LM1808
Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.
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LM741
MIL-M-38510,
M-38510/
10101BCC.
MIL-M-38510
L-M-38510
LM1808
LM1800
TRANSISTOR LM371
ks2 6k
MC7812CP
LM3026
SN52101AJ
transistor bf 175
LM170
Germanium drift transistor
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