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    6A. SOT 23 Search Results

    6A. SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
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    6A. SOT 23 Price and Stock

    Linear Integrated Systems SST4416A-SOT-23

    Wideband, High Gain, Single, N- Channel JFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC SST4416A-SOT-23 Reel 1
    • 1 $1.94
    • 10 $1.94
    • 100 $1.85
    • 1000 $1.76
    • 10000 $1.76
    		Buy Now

    6A. SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: R6006AND Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R6006AND SC-63) OT-428) R6006A R1102A

    BC817 cdil

    Abstract: BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC817 cdil BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16

    BC817

    Abstract: BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC817 BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817

    BC817

    Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E


    Original     		PDF ISO/TS16949 OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC817 BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40

    Untitled

    Abstract: No abstract text available
    Text: AP2324GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Capable of 2.5V gate drive BVDSS D 20V RDS ON Lower Gate Charge 25m ID Surface mount package 6A S RoHS Compliant & Halogen-Free SOT-23 G D Description


    Original     		PDF AP2324GN-HF OT-23 OT-23 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25

    MMBF4416

    Abstract: No abstract text available
    Text: MMBF4416 MMBF4416 N-Channel RF Amplifiers G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS


    Original     		PDF MMBF4416 OT-23 MMBF4416

    MMBT4416

    Abstract: RF Amplifiers
    Text: MMBT4416 MMBT4416 N-Channel RF Amplifiers G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS


    Original     		PDF MMBT4416 OT-23 MMBT4416 RF Amplifiers

    MMBF4416

    Abstract: No abstract text available
    Text: MMBF4416 MMBF4416 N-Channel RF Amplifiers G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS


    Original     		PDF MMBF4416 OT-23 MMBF4416

    Untitled

    Abstract: No abstract text available
    Text: AP2324GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Lower Gate Charge BVDSS 20V RDS ON 25mΩ ID ▼ Surface mount package 6A S ▼ RoHS Compliant & Halogen-Free SOT-23


    Original     		PDF AP2324GN-HF OT-23 100us 100ms

    MMBF4416

    Abstract: No abstract text available
    Text: MMBF4416 MMBF4416 N-Channel RF Amplifiers G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS


    Original     		PDF MMBF4416 OT-23 MMBF4416

    MMBF4416

    Abstract: FAIRCHILD SOT-23 MARK 30 RF Amplifiers rf fairchild transistor 100mhz rf fairchild transistor 100mhz amplifier
    Text: MMBF4416 N-Channel RF Amplifiers • This device is designed for RF amplifiers. • Sourced from process 50. G S SOT-23 D Mark: 6A Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage


    Original     		PDF MMBF4416 OT-23 150lete MMBF4416 FAIRCHILD SOT-23 MARK 30 RF Amplifiers rf fairchild transistor 100mhz rf fairchild transistor 100mhz amplifier

    M00X

    Abstract: APM2600C APM2600 STD-020C
    Text: APM2600C N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/6A, RDS ON =22mΩ(typ.) @ VGS=10V RDS(ON)=26mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6 Lead Free Available (RoHS Compliant)


    Original     		PDF APM2600C OT-23-6 APM2600 APM2600 ANPEC-219° MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 M00X APM2600C STD-020C

    6A marking sot23

    Abstract: BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING
    Text: SEMICONDUCTOR BC817 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 6A 1 2 Item Marking Description Device Mark 6 BC817 hFE Grade A 16 A , 25(B) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method


    Original     		PDF BC817 OT-23 6A marking sot23 BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LN2502LT1G S-LN2502LT1G 20V N-Channel Enhancement-Mode MOSFET VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2502LT1G S-LN2502LT1G 236AB) AEC-Q101 LN2502LT3G S-LN2502LT3G 3000/Tape& 10000/Tape&

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2502LT1G VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 40mΩ RDS(ON), Vgs@4.5V, Ids@6A = 30mΩ 1 2 SOT– 23 (TO–236AB) Features 3 D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2502LT1G 236AB) 3000/Tape 10000/Tape 300us, OT-23

    APM2300C

    Abstract: apm2300ca
    Text: APM2300CA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =25mΩ (typ.) @ VGS=10V RDS(ON)=32mΩ (typ.) @ VGS=4.5V RDS(ON)=40mΩ (typ.) @ VGS=2.5V RDS(ON)=65mΩ (typ.) @ VGS=1.8V • • • Top View of SOT-23 Super High Dense Cell Design


    Original     		PDF APM2300CA OT-23 APM2300C OT-23 MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 apm2300ca

    APM2300C

    Abstract: APM2300CA STD-020C MARKING TR SOT23-3 P MOSFET
    Text: APM2300CA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =25mΩ (typ.) @ VGS=10V RDS(ON)=32mΩ (typ.) @ VGS=4.5V RDS(ON)=40mΩ (typ.) @ VGS=2.5V RDS(ON)=65mΩ (typ.) @ VGS=1.8V • • • Top View of SOT-23 Super High Dense Cell Design


    Original     		PDF APM2300CA OT-23 APM2300C APM2300C MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 APM2300CA STD-020C MARKING TR SOT23-3 P MOSFET

    Untitled

    Abstract: No abstract text available
    Text: VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type RDS on VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1 Ilim Vclamp 2 1 60 mΩ 6A 40 V 2 3 SO-8 SOT-223 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection


    Original     		PDF VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 VNN7NV04 VND7NV04 OT-223 2002/95/EC

    VND7NV04-E

    Abstract: VND7NV04 VND7NV04-1 VND7NV0413TR VND7NV04-1-E VNN7NV04 VNN7NV0413TR VNS7NV04 VNS7NV0413TR TO-251 footprint
    Text: VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type RDS on VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1 Ilim Vclamp 2 1 60 mΩ 6A 2 3 SO-8 SOT-223 40 V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection


    Original     		PDF VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 VNN7NV04 VND7NV04 OT-223 2002/95/EC VND7NV04-E VND7NV04 VND7NV04-1 VND7NV0413TR VND7NV04-1-E VNN7NV04 VNN7NV0413TR VNS7NV04 VNS7NV0413TR TO-251 footprint

    M00X

    Abstract: APM2600 AAAX APM2600C A102 sot-23-6 n-channel mosfet apm26
    Text: APM2600C N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/6A, D D S RDS ON =22mΩ(typ.) @ VGS=10V RDS(ON)=26mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design D Reliable and Rugged D G Top View of SOT-23-6 Lead Free and Green Devices Available


    Original     		PDF APM2600C OT-23-6 APM2600 M00X APM2600 AAAX APM2600C A102 sot-23-6 n-channel mosfet apm26

    Untitled

    Abstract: No abstract text available
    Text: VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type RDS on VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1 Ilim Vclamp 2 1 60 mΩ 6A 40 V 2 3 SO-8 SOT-223 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection


    Original     		PDF VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 VNN7NV04 VND7NV04 OT-223 2002/95/EC

    VND7NV04-E

    Abstract: Power logic MOSFET SOT-223 pulse load calculation formula for single pulse TO252 VND7NV04 VND7NV04-1 VND7NV0413TR VND7NV04-1-E VNN7NV04 VNN7NV0413TR
    Text: VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type RDS on VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1 Ilim Vclamp 2 1 60 mΩ 6A 2 3 SO-8 SOT-223 40 V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection


    Original     		PDF VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1 VNN7NV04 VND7NV04 OT-223 2002/95/EC VND7NV04-E Power logic MOSFET SOT-223 pulse load calculation formula for single pulse TO252 VND7NV04 VND7NV04-1 VND7NV0413TR VND7NV04-1-E VNN7NV04 VNN7NV0413TR

    APM2300CA

    Abstract: apm2300c A102 sot-23 MOSFET Marking code 6A C00X
    Text: APM2300CA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =25mΩ (typ.) @ VGS=10V D S RDS(ON)=32mΩ (typ.) @ VGS=4.5V G RDS(ON)=40mΩ (typ.) @ VGS=2.5V RDS(ON)=65mΩ (typ.) @ VGS=1.8V • • • Top View of SOT-23 Super High Dense Cell Design


    Original     		PDF APM2300CA OT-23 APM2300C APM2300CA apm2300c A102 sot-23 MOSFET Marking code 6A C00X