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    6A SOT-23 MARKING Search Results

    6A SOT-23 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    6A SOT-23 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC817 cdil

    Abstract: BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC817 cdil BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16

    BC817

    Abstract: BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC817 BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817

    BC817

    Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E


    Original     		PDF ISO/TS16949 OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC817 BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25

    6A marking sot23

    Abstract: BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING
    Text: SEMICONDUCTOR BC817 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 6A 1 2 Item Marking Description Device Mark 6 BC817 hFE Grade A 16 A , 25(B) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method


    Original     		PDF BC817 OT-23 6A marking sot23 BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING

    M00X

    Abstract: APM2600C APM2600 STD-020C
    Text: APM2600C N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/6A, RDS ON =22mΩ(typ.) @ VGS=10V RDS(ON)=26mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6 Lead Free Available (RoHS Compliant)


    Original     		PDF APM2600C OT-23-6 APM2600 APM2600 ANPEC-219° MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 M00X APM2600C STD-020C

    MOSFET N-Channel 1a vgs 1.2v sot-23

    Abstract: LN2502LT1G sot-23 Marking N25 6A MARKING marking diode 6a ln2502
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2502LT1G VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features 3 D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2502LT1G 236AB) 3000/Tape& LN2502LT3G 10000/Tape& 300us, OT-23 MOSFET N-Channel 1a vgs 1.2v sot-23 LN2502LT1G sot-23 Marking N25 6A MARKING marking diode 6a ln2502

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LN2502LT1G S-LN2502LT1G 20V N-Channel Enhancement-Mode MOSFET VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2502LT1G S-LN2502LT1G 236AB) AEC-Q101 LN2502LT3G S-LN2502LT3G 3000/Tape& 10000/Tape&

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2502LT1G VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 40mΩ RDS(ON), Vgs@4.5V, Ids@6A = 30mΩ 1 2 SOT– 23 (TO–236AB) Features 3 D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2502LT1G 236AB) 3000/Tape 10000/Tape 300us, OT-23

    APM2300C

    Abstract: apm2300ca
    Text: APM2300CA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =25mΩ (typ.) @ VGS=10V RDS(ON)=32mΩ (typ.) @ VGS=4.5V RDS(ON)=40mΩ (typ.) @ VGS=2.5V RDS(ON)=65mΩ (typ.) @ VGS=1.8V • • • Top View of SOT-23 Super High Dense Cell Design


    Original     		PDF APM2300CA OT-23 APM2300C OT-23 MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 apm2300ca

    APM2300C

    Abstract: APM2300CA STD-020C MARKING TR SOT23-3 P MOSFET
    Text: APM2300CA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =25mΩ (typ.) @ VGS=10V RDS(ON)=32mΩ (typ.) @ VGS=4.5V RDS(ON)=40mΩ (typ.) @ VGS=2.5V RDS(ON)=65mΩ (typ.) @ VGS=1.8V • • • Top View of SOT-23 Super High Dense Cell Design


    Original     		PDF APM2300CA OT-23 APM2300C APM2300C MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 APM2300CA STD-020C MARKING TR SOT23-3 P MOSFET

    M00X

    Abstract: APM2600 AAAX APM2600C A102 sot-23-6 n-channel mosfet apm26
    Text: APM2600C N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/6A, D D S RDS ON =22mΩ(typ.) @ VGS=10V RDS(ON)=26mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design D Reliable and Rugged D G Top View of SOT-23-6 Lead Free and Green Devices Available


    Original     		PDF APM2600C OT-23-6 APM2600 M00X APM2600 AAAX APM2600C A102 sot-23-6 n-channel mosfet apm26

    APM2300CA

    Abstract: apm2300c A102 sot-23 MOSFET Marking code 6A C00X
    Text: APM2300CA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =25mΩ (typ.) @ VGS=10V D S RDS(ON)=32mΩ (typ.) @ VGS=4.5V G RDS(ON)=40mΩ (typ.) @ VGS=2.5V RDS(ON)=65mΩ (typ.) @ VGS=1.8V • • • Top View of SOT-23 Super High Dense Cell Design


    Original     		PDF APM2300CA OT-23 APM2300C APM2300CA apm2300c A102 sot-23 MOSFET Marking code 6A C00X

    marking 6c sot23

    Abstract: BC817 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 SOT-23 6C On semiconductor date Code sot-23 marking code 6c marking 6A SOT 23
    Text: BC817-16LT1, BC817-25LT1, BC817-40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage


    Original     		PDF BC817-16LT1, BC817-25LT1, BC817-40LT1 marking 6c sot23 BC817 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 SOT-23 6C On semiconductor date Code sot-23 marking code 6c marking 6A SOT 23

    transistor 6A mun2111

    Abstract: No abstract text available
    Text: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 DTA114E/D transistor 6A mun2111

    Untitled

    Abstract: No abstract text available
    Text: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 DTA114E/D

    Untitled

    Abstract: No abstract text available
    Text: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 DTA114E/D

    Untitled

    Abstract: No abstract text available
    Text: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 DTA114E/D

    Untitled

    Abstract: No abstract text available
    Text: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 DTA114E/D

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTA114EET1 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with


    Original     		PDF LDTA114EET1 SC-89 LDTA114EET1

    bc816

    Abstract: BC817 SOT-23 6C
    Text: BC817−16LT1 BC817−25LT1 BC817−40LT1 General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage VCBO 50 V Emitter −Base Voltage VEBO


    Original     		PDF BC817-16LT1 BC817-25LT1 BC817-40LT1 BC817-16LT1/D bc816 BC817 SOT-23 6C

    SBC817-40LT1G

    Abstract: BC817 SBC817-40LT3G sot-23 body marking 02
    Text: BC817−16LT1, BC817−25LT1, BC817−40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 V Collector − Base Voltage


    Original     		PDF BC817-16LT1, BC817-25LT1, BC817-40LT1 BC807-16LT1/D SBC817-40LT1G BC817 SBC817-40LT3G sot-23 body marking 02

    SBC817-40LT1G

    Abstract: SOT-23 6C 6a sot-23 marking sot-23 body marking 02 sot-23 marking 6C
    Text: BC817-16LT1, BC817-25LT1, BC817-40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 V Collector − Base Voltage


    Original     		PDF BC817-16LT1, BC817-25LT1, BC817-40LT1 BC817-16LT/D SBC817-40LT1G SOT-23 6C 6a sot-23 marking sot-23 body marking 02 sot-23 marking 6C

    transistor 1f sot-23

    Abstract: sot23 AJ motorola sot 23 marking transistor marking code SOT-23 BC817B marking 1F transistor sot-23 transistor marking code SOT-23 2F marking 1P sot-23 sot 23 transistor 2f sot transistor pinout
    Text: oatrif ©® SOT 23 Microminiature Space Saving Alternatives for Discrete Devices • Packaging — M otorola standard shipping A wide variety of discrete components from method for SOT’s is in vials; additionally, in M otorola's repertoire of reliability-proven sem icon­


    OCR Scan     		PDF BCX70J BC81740 BC850B BC817B BCW72 BCX704 BC817-25 BCX70G BC847A BC817-16 transistor 1f sot-23 sot23 AJ motorola sot 23 marking transistor marking code SOT-23 marking 1F transistor sot-23 transistor marking code SOT-23 2F marking 1P sot-23 sot 23 transistor 2f sot transistor pinout