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    onsemi BC817-16LT1G

    TRANS NPN 45V 0.5A SOT23-3
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    DigiKey BC817-16LT1G Cut Tape 57,915 1
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    onsemi SZBZX84B16LT1G

    DIODE ZENER 16V 250MW SOT23-3
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    Rochester Electronics SZBZX84B16LT1G 24,000 1
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    onsemi BZX84C16LT1G

    DIODE ZENER 16V 250MW SOT23-3
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    DigiKey BZX84C16LT1G Reel 21,000 3,000
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    Rochester Electronics BZX84C16LT1G 527,580 1
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    onsemi BZX84B16LT1G

    DIODE ZENER 16V 250MW SOT23-3
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    DigiKey BZX84B16LT1G Cut Tape 19,117 1
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    BZX84B16LT1G Reel 15,000 3,000
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    onsemi BC807-16LT1G

    TRANS PNP 45V 0.5A SOT23-3
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    DigiKey BC807-16LT1G Reel 18,000 3,000
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    Rochester Electronics BC807-16LT1G 78,006 1
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    16LT1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BC817-16LT1G

    Abstract: BC817-40LT1G BC817 BC817-25LT1G
    Text: BC817-16LT1G, BC817-25LT1G, BC817-40LT1G General Purpose Transistors http://onsemi.com NPN Silicon COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit


    Original
    BC817-16LT1G, BC817-25LT1G, BC817-40LT1G OT-23 BC817-16LT1/D BC817-16LT1G BC817-40LT1G BC817 BC817-25LT1G PDF

    BC807

    Abstract: BC807-16LT1 BC807-25LT1 BC807-40LT1
    Text: MOTOROLA Order this document by BC80716LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector – Emitter Voltage VCEO


    Original
    BC807 16LT1/D BC807-16LT1 BC807-25LT1 BC807-40LT1 236AB) BC807-16LT1/D* BC807-16LT1 BC807-25LT1 BC807-40LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G S-LBC817-16LT1G S-LBC817-25LT1G S-LBC817-40LT1G General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site


    Original
    LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G S-LBC817-16LT1G S-LBC817-25LT1G S-LBC817-40LT1G AEC-Q101 T7-16LT1G S-LBC817-25LT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.


    Original
    LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101 PDF

    BC817

    Abstract: BC817-16LT1G BC817-25LT1G BC817-40LT1G
    Text: BC817-16LT1G, BC817-25LT1G, BC817-40LT1G General Purpose Transistors http://onsemi.com NPN Silicon COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit


    Original
    BC817-16LT1G, BC817-25LT1G, BC817-40LT1G OT-23 BC817-16LT/D BC817 BC817-16LT1G BC817-25LT1G BC817-40LT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original
    LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1 3 COLLECTOR LBC807-25LT1 LBC807-40LT1 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –45 V Collector–Base Voltage V CBO –50


    Original
    LBC807-16LT1 LBC807-25LT1 LBC807-40LT1 236AB) AmbientLBC807-16LT1 LBC807-25LT1 OT-23 PDF

    LBC80725LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.


    Original
    LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101 3000/Tape LBC80725LT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original
    LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 AEC-Q101 S-LBC807-16LT1G LBC807-16LT3G S-LBC807-16LT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC817-16LT1 TRANSISTOR( NPN ) SOT—23 1. BASE BC817-25LT1 2. EMITTER 3. COLLECTOR 1.0 BC817-40LT1 ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter 0.95


    Original
    OT-23 BC817-16LT1 BC817-25LT1 BC817-40LT1 100MHz 037TPY 950TPY 550REF 022REF PDF

    bc817

    Abstract: No abstract text available
    Text: ON Semiconductort BC817-16LT1 BC817-25LT1 BC817-40LT1 General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 45 V Collector–Base Voltage VCBO 50 V Emitter–Base Voltage VEBO 5.0 V IC 500 mAdc Collector Current — Continuous


    Original
    BC817-16LT1 BC817-25LT1 BC817-40LT1 BC817 16LT1 25LT1 40LT1 PDF

    marking 6c sot23

    Abstract: BC817 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 SOT-23 6C On semiconductor date Code sot-23 marking code 6c marking 6A SOT 23
    Text: BC817-16LT1, BC817-25LT1, BC817-40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage


    Original
    BC817-16LT1, BC817-25LT1, BC817-40LT1 marking 6c sot23 BC817 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 SOT-23 6C On semiconductor date Code sot-23 marking code 6c marking 6A SOT 23 PDF

    LBC817-16LT1

    Abstract: LBC817-16LT1G LBC817-25LT1 LBC817-25LT1G LBC817-40LT1 LBC817-40LT1G LBC* MARKING 40LT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC817-16LT1 LBC817-25LT1 LBC817-40LT1 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO


    Original
    LBC817-16LT1 LBC817-25LT1 LBC817-40LT1 LBC817-16LT1 LBC817-25LT1 OT-23 LBC817-3/3 LBC817-16LT1G LBC817-25LT1G LBC817-40LT1 LBC817-40LT1G LBC* MARKING 40LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 BC817-16LT1 BC817-25LT1 BC817-40LT1 1 BASE 2 EMITTER 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 45 V Collector – Base Voltage


    Original
    BC817-16LT1 BC817-25LT1 BC817-40LT1 236AB) PDF

    BC807-40LT1G equivalent

    Abstract: bc807 BC807-16LT1G BC807-25LT1G BC807-40LT1G BC80740LT1G 5B1 SOT-23
    Text: BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit


    Original
    BC807-16LT1G, BC807-25LT1G, BC807-40LT1G BC807-16LT1/D BC807-40LT1G equivalent bc807 BC807-16LT1G BC807-25LT1G BC807-40LT1G BC80740LT1G 5B1 SOT-23 PDF

    BC817

    Abstract: BC817-16LT1 BC817-25LT1 BC817-40LT1
    Text: MOTOROLA Order this document by BC81716LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 BC817-16LT1 BC817-25LT1 BC817-40LT1 1 BASE 2 EMITTER 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


    Original
    BC817 16LT1/D BC817-16LT1 BC817-25LT1 BC817-40LT1 236AB) BC817-16LT1 BC817-25LT1 BC817-40LT1 PDF

    marking 5C

    Abstract: marking 5c diode
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1 LBC807-25LT1 LBC807-40LT1 FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification. 3 ƽNPN complement: LBC817 Series.


    Original
    LBC807-16LT1 LBC807-25LT1 LBC807-40LT1 LBC817 3000/Tape marking 5C marking 5c diode PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC817-16LT1 LBC817-25LT1 LBC817-40LT1 FEATURE ƽCollector current capability IC = 500 mA. ƽCollector-emitter voltage VCEO max = 45 V. ƽGeneral purpose switching and amplification. 3 ƽPNP complement: LBC807 Series.


    Original
    LBC817-16LT1 LBC817-25LT1 LBC817-40LT1 LBC807 3000/Tape PDF

    5C1 SOT-23

    Abstract: sot23 marking 5c1 LBC80725LT3G marking 5b1 5B1 sot23 marking 5a1 sot23 LBC807-40LT3G LBC807-25 LBC807-16LT1G LBC807-16LT3G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


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    LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape 5C1 SOT-23 sot23 marking 5c1 LBC80725LT3G marking 5b1 5B1 sot23 marking 5a1 sot23 LBC807-40LT3G LBC807-25 LBC807-16LT1G LBC807-16LT3G PDF

    transistor 6c x

    Abstract: LBC817-25LT1G LBC817-16LT1G LBC817-16LT3G LBC817-25LT3G LBC817-40LT1G LBC817-40LT3G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G • We declare that the material of product compliance with RoHS requirements. 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage


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    LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G LBC817-16LT1G LBC817-25LT1G OT-23 transistor 6c x LBC817-16LT3G LBC817-25LT3G LBC817-40LT1G LBC817-40LT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BC807-16LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 1 base " 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage


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    BC807-16LT1/D BC807-16LT1 BC807-25LT1 BC807-40LT1 -236A PDF

    Untitled

    Abstract: No abstract text available
    Text: M A X IM U M R A T IN G S Rating Symbol Value Unit C o llector-E m itter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V Em itter-Base Voltage Ve b o 5.0 V 'c 500 m Adc BC817-16LT1 BC817-25LT1 BC817-40LT1 Symbol M ax Unit CASE 318-07, STYLE 6 SOT-23 TO-236AB


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    BC817-16 BC817-25 BC817-40 OT-23 PDF

    BC807-40LT1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 1 % EMITTER 1 jW 2 MAXIMUM RATINGS Rating Symbol Value C o llecto r- Emitter Voltage VCEO -4 5 V C ollector-B ase Voltage VCBO -5 0


    OCR Scan
    BC807-16LT1 BC807-25LT1 BC807-40LT1 O-236AB) BC807-40LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 BC817-16LT1 BC817-25LT1 BC817-40LT1 1 BASE" 2 EMITTER 2 M AXIM UM R ATIN G S Rating Sym bol Value C o llector-Em itter Voltage VCEO 45 V C o lle c to r-B a s e Voltage


    OCR Scan
    BC817-16LT1 BC817-25LT1 BC817-40LT1 PDF