Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    69-206 TRANSISTOR DATA Search Results

    69-206 TRANSISTOR DATA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    69-206 TRANSISTOR DATA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KHB4D0N80F

    Abstract: khb*4D0N80F2 KHB4D0N80F2
    Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB4D0N80P1/F1/F2 KHB4D0N80P1 KHB4D0N80F1 KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80F khb*4D0N80F2 KHB4D0N80F2

    micronote 103

    Abstract: PLAD15KP PLAD30KP 1N6461 30KPxx 1.5ke series RTCA DO-160 microsemi TVS ARINC 582 RT130KP
    Text: APPLICATION NOTE MicroNote 132 AIRCRAFT LIGHTNING PROTECTION A Shortcut to Selecting Transient Voltage Suppressors for RTCA/DO-160E Threats Using Microsemi's New DIRECTselect™ Method by Mel Clark Table of Contents Background 3 Abnormal Voltage Characteristics


    Original     		PDF RTCA/DO-160E micronote 103 PLAD15KP PLAD30KP 1N6461 30KPxx 1.5ke series RTCA DO-160 microsemi TVS ARINC 582 RT130KP

    Untitled

    Abstract: No abstract text available
    Text: electronics marketing 800.332.8638 Avnet Microwave Technical Solutions Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTM-1053 Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The UTM-1053 contains three silicon monolithic microwave


    Original     		PDF UTM-1053 UTM-1053

    transistor a920

    Abstract: transistor A915 transistor a1266 transistor a640 A1279 0/transistor a920
    Text: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTM-1053 Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The UTM-1053 contains three silicon monolithic microwave integrated circuit RF amplifiers mounted on a thin-film substrate


    Original     		PDF UTM-1053 1000MHz UTM-1053 5963-2510E transistor a920 transistor A915 transistor a1266 transistor a640 A1279 0/transistor a920

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    P153 transistor

    Abstract: No abstract text available
    Text: FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H9500, H9500-03 52 mm Square, Bialkali Photocathode, 12-stage, 16 x 16 Multianode, Small Dead Space, Fast Time Response FEATURES ●Small Animal Imaging ●Compact Gamma Camera ●Scinti-mammography


    Original     		PDF H9500, H9500-03 12-stage, H9500 SE-164 TPMH1309E02 B1201 P153 transistor

    P181 Japan

    Abstract: qse-040-01-f-d-a AB p89 H9500 p181 gr transistor p88 transistor P239 transistor p89 transistor p86 P177 transistor
    Text: FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H9500 52 mm Square, Bialkali Photocathode, 12-stage, 16 x 16 Multianode, Small Dead Space, Fast Time Response APPLICATIONS ● Small Animal Imaging ● Compact Gamma Camera ● Scinti-mammography ● 2D Radiation Monitor


    Original     		PDF H9500 12-stage, SE-171-41 TPMH1287E04 P181 Japan qse-040-01-f-d-a AB p89 H9500 p181 gr transistor p88 transistor P239 transistor p89 transistor p86 P177 transistor

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro

    "VDSS 800V" 40A mosfet

    Abstract: 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2
    Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB4D0N80P1/F1/F2 KHB4D0N80P1 "VDSS 800V" 40A mosfet 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2

    KHB4D0N80F2

    Abstract: KHB4D0N80F1 khb*4D0N80F2 KHB4D0N80P1 800V 40A mosfet A10150 "VDSS 800V" 40A mosfet
    Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB4D0N80P1/F1/F2 KHB4D0N80P1 KHB4D0N80F2 KHB4D0N80F1 khb*4D0N80F2 KHB4D0N80P1 800V 40A mosfet A10150 "VDSS 800V" 40A mosfet

    Untitled

    Abstract: No abstract text available
    Text: NON-ISOLATED DC/DC CONVERTERS 3 Vdc – 14.4 Vdc Input, 0.6 Vdc - 5.5 Vdc /20 A Outputs Bel Power Inc., a subsidiary of Bel Fuse Inc. Feb. 16, 2012 SLAN-20D1Ax RoHS Compliant Rev.A Features • Non-Isolated  Cost efficient open frame design  Power Good signal


    Original     		PDF SLAN-20D1Ax IPC-9592 2002/95/EC 2002/95/EC,

    sl-100 TRANSISTOR

    Abstract: MQC207 OC205 OC206
    Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M O C 205 M O C 206 MOC2Q7 Sm all Outline Optoisolators Transistor Output These devices co nsist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silico n p h o to tra n s is to r d ete cto r, in a surface m o u n ta b le , sm a ll o u tlin e ,


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: T w \ HEWLETT 1 "H Æ P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data 1 UTM-1053 Features Description • Frequency Range: 5 to 1000 MHz • MODAMP Silicon Monolithic Gain Stages The UTM-1053 contains three silicon monolithic microwave


    OCR Scan     		PDF UTM-1053 UTM-1053

    UTM 222

    Abstract: s 1231 166 115
    Text: What HEWLETT m!nM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTM-1053 Features Description Applications • IF/RF Amplification The UTM-1053 contains three silicon monolithic microwave integrated circuit RF amplifiers


    OCR Scan     		PDF UTM-1053 Conti55 UTM 222 s 1231 166 115

    NEC D 553 C

    Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
    Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.


    OCR Scan     		PDF 2SC4957 2SC4957-T1 2SC4957-T2 Ple-107 NEC D 553 C TRANSISTOR MAC 223 NEC IC D 553 C

    Untitled

    Abstract: No abstract text available
    Text: WJ-A61-1 /SMA61-1 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 1-6 GHz TYP. HIGH POWER: +20 dBm (TYP.) LOW NOISE: 3.4 dB (TYP.) Specifications* Outline Drawings A61-1 Guaranteed Typical Characteristics 0° to 50°C


    OCR Scan     		PDF WJ-A61-1 /SMA61-1 A61-1 00070TB

    TRANSISTOR 58050

    Abstract: 58050 transistor
    Text: Philips Components Datasheet status Product specification date of issue April 1991 BF747 N P N 1 GHz wideband transistor FEATURES QUICK REFERENCE DATA • Stable oscillator operation • High current gain • Good thermal stability. SYMBOL DESCRIPTION The BF747 is a low cost NPN


    OCR Scan     		PDF BF747 BF747 TRANSISTOR 58050 58050 transistor

    A86 046

    Abstract: SMA86
    Text: WJ-A86 / SMA86 10 to 200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 28 dB TYP. HIGH EFFICIENCY: 21 mA @ 5 VDC (TYP.) LOW NOISE: 3.8 dB (TYP.) MEDIUM OUTPUT LEVEL: +9.0 dBm (TYP.) Outline Drawings A86


    OCR Scan     		PDF WJ-A86 SMA86 A86 046 SMA86

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


    OCR Scan     		PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    TRANSISTOR 2SC 2581

    Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SC5009 2SC5009 TRANSISTOR 2SC 2581 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733

    928 606 402 00

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low


    OCR Scan     		PDF 2SC5008 2SC5008 928 606 402 00

    WJ-CA29-1

    Abstract: WJ-A29-1
    Text: WJ-A29-1 / SMA29-1 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +22 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Outline Drawings A29-1 0.450 n (11.41) ü Specifications * 0.185 ± 0.015 ‘ (4 70 ± 0 38)


    OCR Scan     		PDF WJ-A29-1 SMA29-1 A29-1 0007051a WJ-CA29-1

    transistor 13000

    Abstract: No abstract text available
    Text: u u U A29-1 / SMA29-1 w 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +22 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Outline Drawings A29-1 Specifications 0.200 (5.08) I I I Characteristics Frequency (Min.)


    OCR Scan     		PDF A29-1 SMA29-1 A29-1 50-ohm 1-800-WJ1-4401 transistor 13000

    smd ya transistor

    Abstract: smd AYA
    Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH206 P-channel enhancement mode MOS transistor Preliminary specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13 Philips Semiconductors 1998 Apr 01 PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s


    OCR Scan     		PDF BSH206 OT363 135108/00/02/pp8 smd ya transistor smd AYA