KHB4D0N80F
Abstract: khb*4D0N80F2 KHB4D0N80F2
Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB4D0N80P1/F1/F2
KHB4D0N80P1
KHB4D0N80F1
KHB4D0N80F1
KHB4D0N80F2
KHB4D0N80F
khb*4D0N80F2
KHB4D0N80F2
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micronote 103
Abstract: PLAD15KP PLAD30KP 1N6461 30KPxx 1.5ke series RTCA DO-160 microsemi TVS ARINC 582 RT130KP
Text: APPLICATION NOTE MicroNote 132 AIRCRAFT LIGHTNING PROTECTION A Shortcut to Selecting Transient Voltage Suppressors for RTCA/DO-160E Threats Using Microsemi's New DIRECTselect™ Method by Mel Clark Table of Contents Background 3 Abnormal Voltage Characteristics
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RTCA/DO-160E
micronote 103
PLAD15KP
PLAD30KP
1N6461
30KPxx
1.5ke series
RTCA DO-160
microsemi TVS
ARINC 582
RT130KP
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Untitled
Abstract: No abstract text available
Text: electronics marketing 800.332.8638 Avnet Microwave Technical Solutions Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTM-1053 Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The UTM-1053 contains three silicon monolithic microwave
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UTM-1053
UTM-1053
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transistor a920
Abstract: transistor A915 transistor a1266 transistor a640 A1279 0/transistor a920
Text: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTM-1053 Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The UTM-1053 contains three silicon monolithic microwave integrated circuit RF amplifiers mounted on a thin-film substrate
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UTM-1053
1000MHz
UTM-1053
5963-2510E
transistor a920
transistor A915
transistor a1266
transistor a640
A1279
0/transistor a920
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micro servo 9g
Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call
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V20HL,
V25HS,
V30HL,
V30MX,
V35HS,
V40HL,
V50HL,
V55PI,
X10679EJDV0SG00
micro servo 9g
uPa2003
micro servo 9g tower pro
2SK1060
uPD3599
201 Zener diode
2SK2396
upc1237
infrared sensor TSOP - 1836
2SK518
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P153 transistor
Abstract: No abstract text available
Text: FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H9500, H9500-03 52 mm Square, Bialkali Photocathode, 12-stage, 16 x 16 Multianode, Small Dead Space, Fast Time Response FEATURES ●Small Animal Imaging ●Compact Gamma Camera ●Scinti-mammography
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H9500,
H9500-03
12-stage,
H9500
SE-164
TPMH1309E02
B1201
P153 transistor
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P181 Japan
Abstract: qse-040-01-f-d-a AB p89 H9500 p181 gr transistor p88 transistor P239 transistor p89 transistor p86 P177 transistor
Text: FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H9500 52 mm Square, Bialkali Photocathode, 12-stage, 16 x 16 Multianode, Small Dead Space, Fast Time Response APPLICATIONS ● Small Animal Imaging ● Compact Gamma Camera ● Scinti-mammography ● 2D Radiation Monitor
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H9500
12-stage,
SE-171-41
TPMH1287E04
P181 Japan
qse-040-01-f-d-a
AB p89
H9500
p181 gr
transistor p88
transistor P239
transistor p89
transistor p86
P177 transistor
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MICROPROCESSOR Z80
Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call
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Z80TM
V20TM,
V20HLTM,
V25TM,
V25HSTM,
V30TM,
V30HLTM,
V33TM,
V33ATM,
V35TM,
MICROPROCESSOR Z80
uPD72020
uPC5102
transistor 2p4m
UPD6487
2SD1557
2SJ 3305
UPD77529
TRANSISTOR SOD MARKING CODE 352A
micro servo 9g tower pro
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"VDSS 800V" 40A mosfet
Abstract: 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2
Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB4D0N80P1/F1/F2
KHB4D0N80P1
"VDSS 800V" 40A mosfet
800V 40A mosfet
KHB4D0N80F1
KHB4D0N80F2
KHB4D0N80P1
khb*4D0N80F2
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KHB4D0N80F2
Abstract: KHB4D0N80F1 khb*4D0N80F2 KHB4D0N80P1 800V 40A mosfet A10150 "VDSS 800V" 40A mosfet
Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB4D0N80P1/F1/F2
KHB4D0N80P1
KHB4D0N80F2
KHB4D0N80F1
khb*4D0N80F2
KHB4D0N80P1
800V 40A mosfet
A10150
"VDSS 800V" 40A mosfet
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Untitled
Abstract: No abstract text available
Text: NON-ISOLATED DC/DC CONVERTERS 3 Vdc – 14.4 Vdc Input, 0.6 Vdc - 5.5 Vdc /20 A Outputs Bel Power Inc., a subsidiary of Bel Fuse Inc. Feb. 16, 2012 SLAN-20D1Ax RoHS Compliant Rev.A Features • Non-Isolated Cost efficient open frame design Power Good signal
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SLAN-20D1Ax
IPC-9592
2002/95/EC
2002/95/EC,
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sl-100 TRANSISTOR
Abstract: MQC207 OC205 OC206
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M O C 205 M O C 206 MOC2Q7 Sm all Outline Optoisolators Transistor Output These devices co nsist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silico n p h o to tra n s is to r d ete cto r, in a surface m o u n ta b le , sm a ll o u tlin e ,
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Untitled
Abstract: No abstract text available
Text: T w \ HEWLETT 1 "H Æ P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data 1 UTM-1053 Features Description • Frequency Range: 5 to 1000 MHz • MODAMP Silicon Monolithic Gain Stages The UTM-1053 contains three silicon monolithic microwave
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UTM-1053
UTM-1053
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UTM 222
Abstract: s 1231 166 115
Text: What HEWLETT m!nM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTM-1053 Features Description Applications • IF/RF Amplification The UTM-1053 contains three silicon monolithic microwave integrated circuit RF amplifiers
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UTM-1053
Conti55
UTM 222
s 1231 166 115
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NEC D 553 C
Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.
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2SC4957
2SC4957-T1
2SC4957-T2
Ple-107
NEC D 553 C
TRANSISTOR MAC 223
NEC IC D 553 C
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Untitled
Abstract: No abstract text available
Text: WJ-A61-1 /SMA61-1 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 1-6 GHz TYP. HIGH POWER: +20 dBm (TYP.) LOW NOISE: 3.4 dB (TYP.) Specifications* Outline Drawings A61-1 Guaranteed Typical Characteristics 0° to 50°C
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WJ-A61-1
/SMA61-1
A61-1
00070TB
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TRANSISTOR 58050
Abstract: 58050 transistor
Text: Philips Components Datasheet status Product specification date of issue April 1991 BF747 N P N 1 GHz wideband transistor FEATURES QUICK REFERENCE DATA • Stable oscillator operation • High current gain • Good thermal stability. SYMBOL DESCRIPTION The BF747 is a low cost NPN
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BF747
BF747
TRANSISTOR 58050
58050 transistor
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A86 046
Abstract: SMA86
Text: WJ-A86 / SMA86 10 to 200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 28 dB TYP. HIGH EFFICIENCY: 21 mA @ 5 VDC (TYP.) LOW NOISE: 3.8 dB (TYP.) MEDIUM OUTPUT LEVEL: +9.0 dBm (TYP.) Outline Drawings A86
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WJ-A86
SMA86
A86 046
SMA86
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bc 540
Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0
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BC1611)
BCY58
BCY59
BD1361)
BD436'
BC432'
BC547
bc 540
TRANSISTOR BC 137
TRANSISTOR BC 187
transistor Bc 540
TRANSISTOR BC 136
bc 207 npn
BC 677
bsv57b
TRANSISTOR BD 187
BD 139 N
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TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
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2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
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928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5008
2SC5008
928 606 402 00
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WJ-CA29-1
Abstract: WJ-A29-1
Text: WJ-A29-1 / SMA29-1 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +22 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Outline Drawings A29-1 0.450 n (11.41) ü Specifications * 0.185 ± 0.015 ‘ (4 70 ± 0 38)
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WJ-A29-1
SMA29-1
A29-1
0007051a
WJ-CA29-1
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transistor 13000
Abstract: No abstract text available
Text: u u U A29-1 / SMA29-1 w 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +22 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Outline Drawings A29-1 Specifications 0.200 (5.08) I I I Characteristics Frequency (Min.)
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A29-1
SMA29-1
A29-1
50-ohm
1-800-WJ1-4401
transistor 13000
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smd ya transistor
Abstract: smd AYA
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH206 P-channel enhancement mode MOS transistor Preliminary specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13 Philips Semiconductors 1998 Apr 01 PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s
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BSH206
OT363
135108/00/02/pp8
smd ya transistor
smd AYA
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