KHB4D0N80F
Abstract: khb*4D0N80F2 KHB4D0N80F2
Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB4D0N80P1/F1/F2
KHB4D0N80P1
KHB4D0N80F1
KHB4D0N80F1
KHB4D0N80F2
KHB4D0N80F
khb*4D0N80F2
KHB4D0N80F2
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micronote 103
Abstract: PLAD15KP PLAD30KP 1N6461 30KPxx 1.5ke series RTCA DO-160 microsemi TVS ARINC 582 RT130KP
Text: APPLICATION NOTE MicroNote 132 AIRCRAFT LIGHTNING PROTECTION A Shortcut to Selecting Transient Voltage Suppressors for RTCA/DO-160E Threats Using Microsemi's New DIRECTselect™ Method by Mel Clark Table of Contents Background 3 Abnormal Voltage Characteristics
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RTCA/DO-160E
micronote 103
PLAD15KP
PLAD30KP
1N6461
30KPxx
1.5ke series
RTCA DO-160
microsemi TVS
ARINC 582
RT130KP
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vhdl code for 16 BIT BINARY DIVIDER
Abstract: vhdl code for multiplexer 16 to 1 using 4 to 1 in vhdl code for multiplexer 32 BIT BINARY VHDL code for PWM vhdl code for motor speed control vhdl code for multiplexer 16 to 1 using 4 to 1 vhdl code for multiplexer 32 to 1 gray to binary code converter 32 BIT ALU design with vhdl code 4 bit binary multiplier Vhdl code
Text: Digital Design Using Digilent FPGA Boards ─ VHDL / Active-HDL Edition Table of Contents 1. Introduction 1.1 Background 1.2 Digital Logic 1.3 VHDL 1 1 5 8 2. Basic Logic Gates 2.1 Truth Tables and Logic Equations The Three Basic Gates Four New Gates 2.2 Positive and Negative Logic: De Morgan’s Theorem
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STR 6454
Abstract: str f 6454 str G 5551 47 datasheet str f 6454 str g 5551 3573 1231 str 6454 datasheet LT 7229 LA 4636 str 6353
Text: HP Components Authorized Distributor and Representative Directory Alabama Allied Electronics 1-800-433-5700 California Allied Electronics 1-800-433-5700 Arrow Electronics 1015 Henderson Rd. Huntsville 35816 205 837-6955 Arrow Electronics 26677 W. Agoura Rd.
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441-97ingdom
5965-7668E
5966-1166E
STR 6454
str f 6454
str G 5551 47
datasheet str f 6454
str g 5551
3573 1231
str 6454 datasheet
LT 7229
LA 4636
str 6353
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str 6353
Abstract: str 6454 str w 6353 str f 6454 Commander CV 150 74146 Alexander Hamilton 3573 1231 ME20 str G 5551 47
Text: HP Components Authorized Distributor and Representative Directory Alabama Allied Electronics 1-800-433-5700 California Allied Electronics 1-800-433-5700 Arrow Electronics 1015 Henderson Rd. Huntsville 35816 205 837-6955 Arrow Electronics 26677 W. Agoura Rd.
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P153 transistor
Abstract: No abstract text available
Text: FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H9500, H9500-03 52 mm Square, Bialkali Photocathode, 12-stage, 16 x 16 Multianode, Small Dead Space, Fast Time Response FEATURES ●Small Animal Imaging ●Compact Gamma Camera ●Scinti-mammography
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H9500,
H9500-03
12-stage,
H9500
SE-164
TPMH1309E02
B1201
P153 transistor
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P181 Japan
Abstract: qse-040-01-f-d-a AB p89 H9500 p181 gr transistor p88 transistor P239 transistor p89 transistor p86 P177 transistor
Text: FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H9500 52 mm Square, Bialkali Photocathode, 12-stage, 16 x 16 Multianode, Small Dead Space, Fast Time Response APPLICATIONS ● Small Animal Imaging ● Compact Gamma Camera ● Scinti-mammography ● 2D Radiation Monitor
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H9500
12-stage,
SE-171-41
TPMH1287E04
P181 Japan
qse-040-01-f-d-a
AB p89
H9500
p181 gr
transistor p88
transistor P239
transistor p89
transistor p86
P177 transistor
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465B
Abstract: 700B ARF465A ARF465B VK200-4B
Text: ARF465A ARF465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
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ARF465A
ARF465B
O-247
60MHz
ARF465A
ARF465A/B
465B
700B
ARF465B
VK200-4B
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465B
Abstract: 700B ARF465A ARF465B VK200-4B
Text: ARF465A ARF465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
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ARF465A
ARF465B
O-247
60MHz
ARF465A
ARF465A/B
465B
700B
ARF465B
VK200-4B
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Untitled
Abstract: No abstract text available
Text: ARF465A ARF465B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
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ARF465A
ARF465B
O-247
60MHz
ARF465A
ARF465A/B
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"VDSS 800V" 40A mosfet
Abstract: 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2
Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB4D0N80P1/F1/F2
KHB4D0N80P1
"VDSS 800V" 40A mosfet
800V 40A mosfet
KHB4D0N80F1
KHB4D0N80F2
KHB4D0N80P1
khb*4D0N80F2
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KHB4D0N80F2
Abstract: KHB4D0N80F1 khb*4D0N80F2 KHB4D0N80P1 800V 40A mosfet A10150 "VDSS 800V" 40A mosfet
Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB4D0N80P1/F1/F2
KHB4D0N80P1
KHB4D0N80F2
KHB4D0N80F1
khb*4D0N80F2
KHB4D0N80P1
800V 40A mosfet
A10150
"VDSS 800V" 40A mosfet
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sl-100 TRANSISTOR
Abstract: MQC207 OC205 OC206
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M O C 205 M O C 206 MOC2Q7 Sm all Outline Optoisolators Transistor Output These devices co nsist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silico n p h o to tra n s is to r d ete cto r, in a surface m o u n ta b le , sm a ll o u tlin e ,
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AT00510
Abstract: at-00510 TRANSISTOR MAC 223
Text: HEWLETT-PACKARD/ H EW LETT Whn% w 'rm Cf l PNTS PACKARD b l E I> • AT-00510 4447564 427 Up to 4 GHz General Purpose Silicon Bipolar Transistor Features • • • • • 0010473 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical GidB at 2.0 GHz
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AT-00510
AT00510
TRANSISTOR MAC 223
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Untitled
Abstract: No abstract text available
Text: AVANTEK I N C 20E 0A V A N TEK D im n tb QGQb43T 1 AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 100 mit Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • • 10.5 dB typical Gi dB at 2.0 GHz 2.5 dB typical NF0 at 2.0 GHz
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QGQb43T
AT-00510
3lO-37l-87l7or
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ • 7 1« CPIPNTS b lE HEW LETT mPPM P I> ■ MM475A4 ME? AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor a c k a rd Features • • • • • OOI OMTB 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi hb at 2.0 GHz
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MM475A4
AT-00510
AT-00510
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bc 540
Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0
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BC1611)
BCY58
BCY59
BD1361)
BD436'
BC432'
BC547
bc 540
TRANSISTOR BC 137
TRANSISTOR BC 187
transistor Bc 540
TRANSISTOR BC 136
bc 207 npn
BC 677
bsv57b
TRANSISTOR BD 187
BD 139 N
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SML45G60AN
Abstract: SULB
Text: SEMELAB PLC_ bDE D • 0133167 □DDGiGQ Mflfl ■ ■ SULB llll MOS POWER 4 IGBT 'Psvsi m SEME SML45G60AN LAB 600V 45A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.
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SML45G60AN
SML45G600AN
SULB
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2n3250A
Abstract: 2n3251a
Text: SEMICONDUCTOR! TECHNICAL DATA 2N3250A 2N3251A CR YST ALOfJCS 2805 Vet«r»>s Highway Suite 14 Ronkorkorna, N Y. 1177t PNP Silicon Small-Signal Transistors . designed for general-purpose switching and amplifier applications MAXIMUM RATINGS Rating Unit Symbol
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2N3250A
2N3251A
1177t
2N3251A
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CS2002
Abstract: No abstract text available
Text: Intended for the integration of complex circuits, the GENESIS 5000 linear array has over 300 transistors and includes 20 macrocell “tiles” organized in a 4 x 5 matrix. This approach allows circuit functions to be replicated simply by transferring the layout to another cell.
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200mA.
CS-3001
CS-1205
CS-2501
CS-2502
CS2002
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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Untitled
Abstract: No abstract text available
Text: WJ-A61-1 /SMA61-1 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 1-6 GHz TYP. HIGH POWER: +20 dBm (TYP.) LOW NOISE: 3.4 dB (TYP.) Specifications* Outline Drawings A61-1 Guaranteed Typical Characteristics 0° to 50°C
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WJ-A61-1
/SMA61-1
A61-1
00070TB
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NEC D 553 C
Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.
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2SC4957
2SC4957-T1
2SC4957-T2
Ple-107
NEC D 553 C
TRANSISTOR MAC 223
NEC IC D 553 C
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R1C11
Abstract: r6c1
Text: Configuration selection generates starting addresses at either zero or 3FFFF, to be compatible with different microprocessor addressing conventions. The Master Serial Mode generates CCLK and receives the configuration data in serial form from configuration data in serial form from a
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