Untitled
Abstract: No abstract text available
Text: T T WS512K32BV-XCJCE M/HITE /M ICROELECTRONICS 512Kx32 3.3V SRAM MODULE ADVANCED* FEATURES • Access Times of 15,17, 20ns Commercial Temperature Range ■ Low Voltage Operation: TTL Compatible Inputs and Outputs •3.3V ±10% Power Supply Fully Static Operation:
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WS512K32BV-XCJCE
512Kx32
68-lead,
512Kx32;
1Mx16
WS512K32BV-XCJCE
68LEADJLCC
WS512K32BV-XC
512K32
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Untitled
Abstract: No abstract text available
Text: SEX EDI7C32128C ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM Features The EDI7C32128C is a high performance, four megabit 128Kx32 bit C M O S Flash density Flash EEPROM organized as 128Kx32 bits. The • Five-volt-only reprogramming
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EDI7C32128C
128Kx32
EDI7C32128C
128Kx8
200ns
I7C32128C120JM
I7C32128C150JM
I7C32128C200JM
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512Kx8 bit Low Power CMOS Static RAM
Abstract: No abstract text available
Text: ^EDI EDI8C32512CA M ELECTRONIC DESIGNS. INC 512Kx32 Static Ram 512Kx32 Highspeed Static RAM Features The EDI8C32512CA, a high speed, high performance, four megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs mounted in a package.
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18C32512CA
512Kx32
EDI8C32512LP
68leadJLCC,
EDI8C32512CA20JM
EDI8C32512CA20JI
01581USA
EDI8C32512CA
512Kx8 bit Low Power CMOS Static RAM
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