ba37
Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
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K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
ba37
K8D1716U
K8D1716UBC
samsung nor flash
BA251
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M29F800D
Abstract: M29F800DB M29F800DT
Text: M29F800DT M29F800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29F800DT
M29F800DB
512Kb
TSOP48
M29F800D
M29F800DB
M29F800DT
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29F800T
Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption
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MX29F800T/B
1Mx8/512Kx16]
70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/08/2000
DEC/04/2000
FEB/12/2001
29F800T
7D000H-7DFFFH
SA13
MX29F800T
SA10
SA11
SA12
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DL161
Abstract: DL162 DL163
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xD
16-Bit)
Am29DL164D
Am29DL162D
DL161
DL162
DL163
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324T
Abstract: 2MWx16bit
Text: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C
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MX69LW322/324T/B
32M-BIT
X8/X16]
X8/X16)
70/90ns
70/85ns
AuP44
APR/17/2002
APR/18/2002
MAY/31/2002
324T
2MWx16bit
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MX29LV400
Abstract: mx29LV160cbtc-70g MX29LV800C MX29LV160C MX29LV160CBTI-70G mx29lv160d MX29LV800CBTC-90G MX29LV800CTTC-70 MX29LV160CTTC-70G
Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B MX29LV400C T/B, MX29LV800C T/B, MX29LV160C T/B DATASHEET The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the
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MX29LV400C
MX29LV800C
MX29LV160C
MX29LV160D
MX29LV400
mx29LV160cbtc-70g
MX29LV160CBTI-70G
MX29LV800CBTC-90G
MX29LV800CTTC-70
MX29LV160CTTC-70G
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C000H-DFFFH
Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation
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MX29LW128T/B/U/D
128M-BIT
JAN/27/2003
MAR/28/2003
MAY/16/2003
MAY/29/2003
C000H-DFFFH
24Blocks
FB0000h-FBFFFFh
9F0000h-9FFFFFh
C10000h-C1FFFFh
FF4000h-FF5FFFh
8a0000h8affffh
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Untitled
Abstract: No abstract text available
Text: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160ET
M29W160EB
TSOP48
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M410000002
Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Text: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am41DL16x4D
M410000002
DL161
DL162
DL163
m410000009
AM29DL164DT
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DL161
Abstract: DL162 DL163 AM29DL164DT M4200
Text: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am42DL16x2D
FLA069--69-Ball
DL161
DL162
DL163
AM29DL164DT
M4200
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29LV800
Abstract: TSOP 48 Pattern
Text: PRELIMINARY MX29LV800T/B & MX29LV800AT/AB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV800T/B
MX29LV800AT/AB
1Mx8/512K
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
MAR/01/2002
APR/18/2002
29LV800
TSOP 48 Pattern
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BA RV
Abstract: code lock circuit A1D14 RV80
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29FB/T800FP
RV-80
608-BIT
576-WORD
288-WORD
BY16-BIT)
BA RV
code lock circuit
A1D14
RV80
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Q002
Abstract: M29W800FT TFBGA48 TSOP48 outline m29w800f
Text: M29W800FT M29W800FB 8 Mbit 1 Mb x8 or 512 Kb ×16, Boot Block 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read ■ Access time: 70 ns ■ Programming time – 10 µs per Byte/Word typical
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M29W800FT
M29W800FB
64-bit
Q002
M29W800FT
TFBGA48
TSOP48 outline
m29w800f
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ST M29W800DT
Abstract: M29W800D M29W800DB M29W800DT TFBGA48
Text: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read ■ Access times: 45, 70, 90ns ■ Programming time – 10µs per Byte/Word typical ■ 19 memory blocks
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M29W800DT
M29W800DB
512Kb
64-and
ST M29W800DT
M29W800D
M29W800DB
M29W800DT
TFBGA48
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29FB/T800FP
RV-80
608-BIT
576-WORD
288-WORD
BY16-BIT)
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Untitled
Abstract: No abstract text available
Text: A82DL16x4T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit
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A82DL16x4T
Bit/1Mx16
256Kx16
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DL162
Abstract: DL163
Text: ADVANCE INFORMATION Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Back DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xC
16-Bit)
FBC048.
DL162
DL163
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A82DL1632TG-70UF
Abstract: DL1632
Text: A82DL16x2T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2M (128Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit
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A82DL16x2T
Bit/1Mx16
128Kx16
MO-219
A82DL1632TG-70UF
DL1632
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BA100 diode
Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance
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K5C6481NT
4Mx16)
512Kx16)
512Kx10
81-Ball
80x11
BA100 diode
BA102
ba107
Samsung MCP
BA125 Diode
diode ba102
BA134
BA100
BA106
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M29W160
Abstract: M29W160BB M29W160BT sequential timer using 555
Text: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical
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M29W160BT
M29W160BB
TSOP48
LFBGA48
M29W160
M29W160BB
M29W160BT
sequential timer using 555
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Untitled
Abstract: No abstract text available
Text: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from
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Am29DL800B
8-Bit/512
16-Bit)
Am29DL800
FBB048.
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Untitled
Abstract: No abstract text available
Text: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES
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Am29DL162C/Am29DL163C
16-Bit)
29DL162C/Am
29DL163C
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 MICROSYSTEMS A D V A N C ED INFO RM ATIO N D E S C R IP T IO N : PIN -O U T DIAGRAM The D P3SZ12851 2X1 6 N Y 5 m o d u le s are a re v o lu tio n a ry new m em ory subsystem using D ense-P ac M ic ro s y s te m s ’ TSO P s ta c k in g
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DP3SZ128512X16NY5
P3SZ12851
30A193-00
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Untitled
Abstract: No abstract text available
Text: w # SGS-THOMSON k7#1 IMlMIIlLIOTiMDtgS M29W800T M29W800B 8 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical
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M29W800T
M29W800B
x8/x16,
100ns
10jas
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