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    LED37FC-SMD5

    Abstract: No abstract text available
    Text: LED37FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 3.75 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions


    Original     		PDF LED37FC-SMD5 LED37FC-SMD5 670x770 150-200mA

    LED23FC-TEC-PR

    Abstract: No abstract text available
    Text: LED23FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED23FC-TEC-PR LED23FC-TEC-PR 670x770 150-200mA

    LED23FC

    Abstract: No abstract text available
    Text: LED23FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED23FC LED23FC 670x770 150-200mA

    LED19FC-TEC

    Abstract: No abstract text available
    Text: LED19FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED19FC-TEC LED19FC-TEC 670x770 150-200mA

    LED18FC-TEC

    Abstract: No abstract text available
    Text: LED18FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED18FC-TEC LED18FC-TEC 670x770 150-200mA

    LED20FC-TEC

    Abstract: No abstract text available
    Text: LED20FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED20FC-TEC LED20FC-TEC 670x770 150-200mA

    LED20FC-SMD5

    Abstract: No abstract text available
    Text: LED20FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid


    Original     		PDF LED20FC-SMD5 LED20FC-SMD5 670x770 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED16FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED16FC-PR LED16FC-PR 670x770 150-200mA

    LED19FC-PR

    Abstract: No abstract text available
    Text: LED19FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED19FC-PR LED19FC-PR 670x770 150-200mA

    LED18FC-TEC-PR

    Abstract: No abstract text available
    Text: LED18FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED18FC-TEC-PR LED18FC-TEC-PR 670x770 150-200mA

    LED19FC-PR-WIN

    Abstract: No abstract text available
    Text: LED19FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED19FC-PR-WIN LED19FC-PR-WIN 670x770 150-200mA

    LED22FC-PR-WIN

    Abstract: No abstract text available
    Text: LED22FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED22FC-PR-WIN LED22FC-PR-WIN 670x770 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED17FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.75 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED17FC-TEC LED17FC-TEC 670x770 150-200mA

    LED21FC-TEC-PR

    Abstract: No abstract text available
    Text: LED21FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED21FC-TEC-PR LED21FC-TEC-PR 670x770 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED17FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.75 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED17FC LED17FC 670x770 150-200mA

    LED19FC-TEC-PR

    Abstract: No abstract text available
    Text: LED19FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED19FC-TEC-PR LED19FC-TEC-PR 670x770 150-200mA

    LED21FC-SMD5

    Abstract: No abstract text available
    Text: LED21FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid


    Original     		PDF LED21FC-SMD5 LED21FC-SMD5 670x770 150-200mA

    LED22FC

    Abstract: No abstract text available
    Text: LED22FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED22FC LED22FC 670x770 150-200mA

    LED22FC-SMD5

    Abstract: No abstract text available
    Text: LED22FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid


    Original     		PDF LED22FC-SMD5 LED22FC-SMD5 670x770 150-200mA

    LED23FC-TEC

    Abstract: No abstract text available
    Text: LED23FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED23FC-TEC LED23FC-TEC 670x770 150-200mA

    LED22FC-TEC-PR

    Abstract: No abstract text available
    Text: LED22FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED22FC-TEC-PR LED22FC-TEC-PR 670x770 150-200mA

    LED18FC-PR

    Abstract: No abstract text available
    Text: LED18FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED18FC-PR LED18FC-PR 670x770 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED17FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.75 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED17FC-PR-WIN LED17FC-PR-WIN 670x770 150-200mA

    LED19FC-SMD5

    Abstract: No abstract text available
    Text: LED19FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid


    Original     		PDF LED19FC-SMD5 LED19FC-SMD5 670x770 150-200mA