LED23FC-TEC-PR
Abstract: No abstract text available
Text: LED23FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap
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LED23FC-TEC-PR
LED23FC-TEC-PR
670x770
150-200mA
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LED23FC
Abstract: No abstract text available
Text: LED23FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap
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LED23FC
LED23FC
670x770
150-200mA
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LED23FC-TEC
Abstract: No abstract text available
Text: LED23FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap
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LED23FC-TEC
LED23FC-TEC
670x770
150-200mA
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LED23FC-SMD5
Abstract: No abstract text available
Text: LED23FC-SMD5 v 1.1 6.11.2013 Description LED23FC-SMD5 is fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This surface mount Mid-IR LED provides a typical peak wavelength of 2.35 µm and optical power of typ. 1 mW qCW. It comes in low temperature co-fired ceramic SMD
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LED23FC-SMD5
LED23FC-SMD5
150mA
200mA
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LED23FC-PR-WIN
Abstract: No abstract text available
Text: LED23FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap
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Original
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LED23FC-PR-WIN
LED23FC-PR-WIN
670x770
150-200mA
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LED23FC-PR
Abstract: No abstract text available
Text: LED23FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap
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LED23FC-PR
LED23FC-PR
670x770
150-200mA
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Product line
Abstract: No abstract text available
Text: Mid-IR Products Product Line Overview Mid-Infrared Light Emitting Diodes and Photodiodes We offer: • • • • • Standard LEDs Flip-Chip bounded LEDs Multi Chip LEDs PDs LED drivers and PD amplifiers Standard LEDs LED chips with circular or ring top contact
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LED18
LED19
LED20
LED21
LED22
LED23
LED29
LED34
LED35
LED36
Product line
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smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
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RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
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