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    ITT Interconnect Solutions INSUL ASSY CV3450-36-6 PIN

    - Bulk (Alt: INSUL ASSY CV3450-)
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    Avnet Americas INSUL ASSY CV3450-36-6 PIN Bulk 37 Weeks 50
    • 1 -
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    • 100 $536.585
    • 1000 $300.3965
    • 10000 $258.9625
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    Newark INSUL ASSY CV3450-36-6 PIN Bulk 50
    • 1 -
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    • 100 $392.48
    • 1000 $392.48
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    Hirschmann Electronics GmbH & Co Kg PINPLATE GDM NO CONTACTS

    Sensor Cables / Actuator Cables
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    Mouser Electronics PINPLATE GDM NO CONTACTS
    • 1 $0.99
    • 10 $0.827
    • 100 $0.689
    • 1000 $0.551
    • 10000 $0.458
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    Hirschmann Electronics GmbH & Co Kg PINPLATE GDM 4-CONTACT

    Sensor Cables / Actuator Cables
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    Mouser Electronics PINPLATE GDM 4-CONTACT
    • 1 $2.73
    • 10 $2.4
    • 100 $1.91
    • 1000 $1.58
    • 10000 $1.42
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    Hirschmann Electronics GmbH & Co Kg PINPLATE GDM NO CONT.

    Sensor Cables / Actuator Cables
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    Mouser Electronics PINPLATE GDM NO CONT.
    • 1 $0.79
    • 10 $0.659
    • 100 $0.549
    • 1000 $0.439
    • 10000 $0.365
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    Hirschmann Electronics GmbH & Co Kg PINPLATE GDM 3-CONTACT

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PINPLATE GDM 3-CONTACT
    • 1 $2.61
    • 10 $2.22
    • 100 $1.83
    • 1000 $1.45
    • 10000 $1.28
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    66PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    W5100

    Abstract: MAG-JACK blink led blink
    Text: W5100 LINKLED Usage This document is about W5100 LINKLED pin 66pin of W5100 operation. LED status is not related to the performance and function of W5100. 1. Description of W5100 LINK LED Operation - LINKLED of W5100 (66pin) operates active low. When network cable is connected, the signal


    Original     		PDF W5100 66pin W5100) W5100. W5100 66pin) MAG-JACK blink led blink

    HDD16M64D8W

    Abstract: No abstract text available
    Text: HANBit HDD16M64D8W DDR SDRAM Module 128Mbyte 16Mx64bit , based on16Mx8,4Banks, 4K Ref., DIMM, Part No. HDD16M64D8W GENERAL DESCRIPTION The HANBiT HDD16M64D8W is 16M bit x 64 Double Data Rate SDRAM high density memory modules. The HANBiT HDD16M64D8W consists of eight CMOS 16M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages


    Original     		PDF HDD16M64D8W 128Mbyte 16Mx64bit) on16Mx8 HDD16M64D8W 66pin 400mil) 184pin

    HDD64M72D18W

    Abstract: No abstract text available
    Text: HANBit HDD64M72D18W DDR SDRAM Module 512Mbyte 64Mx72bit , based on 32Mx8, 4Banks, 8K Ref., with 184Pin-DIMM Part No. HDD64M72D18W GENERAL DESCRIPTION The HDD64M72D18W is a 64M x 72 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of eighteen CMOS 32M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages


    Original     		PDF HDD64M72D18W 512Mbyte 64Mx72bit) 32Mx8, 184Pin-DIMM HDD64M72D18W 66pin 400mil 184-pin

    diode Dq35-12

    Abstract: HDD32M64F8
    Text: HANBit HDD32M64F8 DDR SDRAM Module 256Mbyte 32Mx64bit , based on 32Mx8, 4Banks, 8K Ref., SMM, Part No. HDD32M64F8 GENERAL DESCRIPTION The HANBiT HDD32M64F8 is 32M bit x 64 Double Data Rate SDRAM high density memory modules. The HANBiT HDD32M64F8 consists of eight CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil)


    Original     		PDF HDD32M64F8 256Mbyte 32Mx64bit) 32Mx8, HDD32M64F8 66pin 400mil) 200pin diode Dq35-12

    HDD16M64B8

    Abstract: No abstract text available
    Text: HANBit HDD16M64B8 DDR SDRAM Module 128Mbyte 16Mx64bit , based on16Mx8,4Banks, 4K Ref. SO-DIMM Part No. HDD16M64B8 GENERAL DESCRIPTION The HDD16M64B8 is a 16M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K


    Original     		PDF HDD16M64B8 128Mbyte 16Mx64bit) on16Mx8 HDD16M64B8 66pin 400mil 200-pin

    HDD16M64F8

    Abstract: No abstract text available
    Text: HANBit HDD16M64F8 DDR SDRAM Module 128Mbyte 16Mx64bit , based on16Mx8,4Banks, 4K Ref., SMM, Part No. HDD16M64F8 GENERAL DESCRIPTION The HDD16M64F8 is a 32M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K


    Original     		PDF HDD16M64F8 128Mbyte 16Mx64bit) on16Mx8 HDD16M64F8 66pin 400mil 200-pin HSD16M64F8L

    Untitled

    Abstract: No abstract text available
    Text: 66PIN PLASTIC TSOP II (400mil) detail of lead end 66 34 F G R P L S 1 E 33 A H I J S C D M N L S K M B NOTES 1. Each lead centerline is located within 0.13 mm of its true position (T.P.) at maximum material condition. 2. Dimension "A" does not include mold flash, protrusions or gate


    Original     		PDF 66PIN 400mil) S66G5-65STIC S66G5-65-9LG

    HDD32M64B8

    Abstract: No abstract text available
    Text: HANBit HDD32M64B8 DDR SDRAM Module 256Mbyte 32Mx64bit , based on32Mx8,4Banks, 8K Ref., SO-DIMM Part No. HDD32M64B8 GENERAL DESCRIPTION The HDD32M64B8 is a 32M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of eight CMOS 32M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K


    Original     		PDF HDD32M64B8 256Mbyte 32Mx64bit) on32Mx8 HDD32M64B8 66pin 400mil 200-pin

    HDD32M64F8K

    Abstract: HSD32M64F8K
    Text: HANBit HDD32M64F8K DDR SDRAM Module 256Mbyte 32Mx64bit , based on16Mx8,4Banks, 4K Ref., SMM, Part No. HDD32M64F8K GENERAL DESCRIPTION The HDD32M64F8K is a 32M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of sixteen CMOS 16M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K


    Original     		PDF HDD32M64F8K 256Mbyte 32Mx64bit) on16Mx8 HDD32M64F8K 66pin 400mil 200-pin HSD32M64F8K

    OV5653

    Abstract: image sensor omnivision response ov05653 OV56 90fps omnivision 1.3 Megapixel camera module 16-zone OV565 OmniVision 5 megapixel
    Text: OV5653 5-megapixel product brief lead free available in a lead-free package Industry-Leading Still Image Capture and 1080p Full HD Digital Video The OV5653 is OmniVision's high-performance 5-megapixel imaging solution for digital still camera DSC and digital


    Original     		PDF OV5653 1080p image sensor omnivision response ov05653 OV56 90fps omnivision 1.3 Megapixel camera module 16-zone OV565 OmniVision 5 megapixel

    W9425G6JH

    Abstract: No abstract text available
    Text: W9425G6JH 4 M  4 BANKS  16 BITS DDR SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W9425G6JH

    M368L1624DTL

    Abstract: No abstract text available
    Text: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History


    Original     		PDF M368L1624DTL 184pin 128MB 16Mx64 16Mx16 64-bit M368L1624DTL

    DDR266

    Abstract: No abstract text available
    Text: DDR SDRAM stacked 1Gb B-die x4/x8 DDR SDRAM Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.1 Rev. 1.1 August. 2003 DDR SDRAM stacked 1Gb B-die (x4/x8) DDR SDRAM st. 1Gb B-die Revision History Revision 0.0 (May, 2003) - First version for internal review.


    Original     		PDF

    DDR200

    Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
    Text: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).


    Original     		PDF IBMN612404GT3B IBMN612804GT3B 128Mb DDR266A DDR266B DDR200 06K0566 F39350B DDR200 DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266

    NT5DS8M16FS-5T

    Abstract: NT5DS8M16FS-6K NT5DS8
    Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T


    Original     		PDF NT5DS8M16FT NT5DS8M16FS 128Mb NT5DS8M16FS-5T NT5DS8M16FS-6K NT5DS8

    NT5TU32M16AG-37B

    Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
    Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8


    Original     		PDF NT5TU128M4AB/NT5TU128M4AE NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE NT5TU32M16AF/NT5TU32M16AG /NT5TU32M16AS 512Mb NT5TU32M16AG-37B NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af

    Nanya nt5ds8m16fs

    Abstract: NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT
    Text: NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8


    Original     		PDF NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb Nanya nt5ds8m16fs NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT

    NT5DS8M16FS-5T

    Abstract: NT5DS8M16FS-6K NT5DS8M16 NT5DS8M16FS
    Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T


    Original     		PDF NT5DS8M16FT NT5DS8M16FS 128Mb NT5DS8M16FS-5T NT5DS8M16FS-6K NT5DS8M16 NT5DS8M16FS

    XM28C010P

    Abstract: No abstract text available
    Text: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times


    Original     		PDF XM28C010P --150ns, 120ns, Size--64 XM28C010P

    NT5DS16M16BF-6K

    Abstract: NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M
    Text: NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS32M8BG NT5DS16M16BG 256Mb DDR SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions


    Original     		PDF NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS16M16BF-6K NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M

    Untitled

    Abstract: No abstract text available
    Text: M381L6423DTL 184pin Unbuffered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Unbuffered 184pin DIMM 72-bit ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M381L6423DTL 184pin Unbuffered DDR SDRAM MODULE Revision History


    Original     		PDF M381L6423DTL 184pin 512MB 64Mx72 32Mx72 32Mx8 72-bit

    M368L6523DUS

    Abstract: L2923D
    Text: 256MB, 512MB, 1GB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		PDF 256MB, 512MB, 184pin 512Mb 64/72-bit 64Mx8 K4H510838D-U* M368L6523DUS L2923D

    E3235

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		PDF TC59WM815/07/03BFT-70 304-WORDSX4BANKSX16-BITS 608-WORDSX4BANKSX8-BITS 216-WORDSX4BANKSX4-BITS TC59WM815BFT TC59WM807BFT TC59WM803BFT E3235

    lm814

    Abstract: ID32-001
    Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR


    OCR Scan     		PDF TC59LM814/06BFT-22 TC59LM814/06BFT TC59LM814BFT 304-words TC59LM806BFT LM814/06B FT-22 lm814 ID32-001