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    66A DIODES Search Results

    66A DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    66A DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SG-52 diode

    Abstract: DDR4 pcb layout guidelines diode cross reference SL 1515 Ps3 MOTHERBOARD CIRCUIT diagram RG810 IMVP7 IMVP-7 ntc 33 0530
    Text: L6718 Digitally controlled dual PWM with embedded drivers for VR12 processors Datasheet − preliminary data Features • VR12 compliant with 25 MHz SVID bus rev. 1.5 ■ Second generation LTB Technology ■ Very compact dual controller: – Up to 4 phases for core section with 2


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    L6718 SG-52 diode DDR4 pcb layout guidelines diode cross reference SL 1515 Ps3 MOTHERBOARD CIRCUIT diagram RG810 IMVP7 IMVP-7 ntc 33 0530 PDF

    L6718

    Abstract: Ps3 MOTHERBOARD CIRCUIT diagram
    Text: L6718 Digitally controlled dual PWM with embedded drivers for VR12 processors Datasheet − preliminary data Features • VR12 compliant with 25 MHz SVID bus rev. 1.5 ■ Second generation LTB Technology ■ Very compact dual controller: – Up to 4 phases for core section with 2


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    L6718 VFQFPN56 L6718 Ps3 MOTHERBOARD CIRCUIT diagram PDF

    RG810

    Abstract: DDR4 pcb layout guidelines intel VR12 PS3 motherboard Ps3 MOTHERBOARD CIRCUIT diagram DDR3 pcb layout motherboard intel IMVP7 l6718
    Text: L6718 Digitally controlled dual PWM with embedded drivers for VR12 processors Datasheet − preliminary data Features • VR12 compliant with 25 MHz SVID bus rev. 1.5 ■ Second generation LTB Technology ■ Very compact dual controller: – Up to 4 phases for core section with 2


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    L6718 RG810 DDR4 pcb layout guidelines intel VR12 PS3 motherboard Ps3 MOTHERBOARD CIRCUIT diagram DDR3 pcb layout motherboard intel IMVP7 l6718 PDF

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes PL63/65/67 Series Visible Laser Diode Modules PD-LD Inc. offers a variety of packaging options for its’ Visible Series of laser diodes. These units are available in ready-to-use, fiber-coupled packages, including FC, ST, and SC receptacles, as well as fiber- pigtailed


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    PL63/65/67 630nm, 650nm 670nm. 200um ld/pl636567 PDF

    battery 6lf22

    Abstract: LCD 1604A 6Lf22 Tenma
    Text: 72-7228 Digital Clamp Multimeter P/N: 110401100913 Model 72-7228 OPERATING MANUAL Model 72-7228: OPERATING MANUAL Table of Contents Title Page Overview Inspection Safety Information Rules For Safe Operation International Electrical Symbols The Meter Structure


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    6LF22, battery 6lf22 LCD 1604A 6Lf22 Tenma PDF

    ge 142

    Abstract: GA100TS60U
    Text: PD -50055C GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


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    -50055C GA100TS60U ge 142 GA100TS60U PDF

    GE 443

    Abstract: GA100TS60U
    Text: PD -5.055A PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


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    GA100TS60U GE 443 GA100TS60U PDF

    GE 443

    Abstract: GA100TS60U
    Text: PD -50055B GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


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    -50055B GA100TS60U GE 443 GA100TS60U PDF

    GE 443

    Abstract: GA100TS60U
    Text: PD -5.055A PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


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    GA100TS60U GE 443 GA100TS60U PDF

    100L

    Abstract: clamp meter schematic digital AC clamp meter schematic
    Text: ES51967 6,600 Counts Auto DMM Features • 6,600 counts LCD display • 100L QFP package • 3V DC power supply • Conversion rate : 3 times/s • Full automatic measurement • Sleep state indicative signal output • Re-power on • On-chip buzzer driver


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    ES51967 ES51967 600nF 00MHz 100L clamp meter schematic digital AC clamp meter schematic PDF

    5 DIGIT SINGLE CHIP DIGITAL MULTIMETER

    Abstract: digital AC clamp meter schematic 100L "Duty cycle measurement" V1815 beep 680k ohm resistor DIODE s4 66A
    Text: ES51967 6,600 Counts Auto DMM Features • 6,600 counts LCD display • 100L QFP package • 3V DC power supply • Conversion rate : 3 times/s • Full automatic measurement • Sleep state indicative signal output • Re-power on • On-chip buzzer driver


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    ES51967 ES51967 600nF 00MHz 5 DIGIT SINGLE CHIP DIGITAL MULTIMETER digital AC clamp meter schematic 100L "Duty cycle measurement" V1815 beep 680k ohm resistor DIODE s4 66A PDF

    clamp meter schematic

    Abstract: ES51969 100L 660V power meters with displays tl0611 45-3-44 0.1m 250 MKT adp 200 Cyrustek
    Text: ES51969 6,600 Counts Auto DMM • Auto power off 30min/15min Features • Sleep state indicative signal output • 6,600 counts LCD display • Re-power on • 100L QFP package • On-chip buzzer driver • 3V DC power supply • Low battery detection for 3V or 9V battery


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    ES51969 30min/15min) ES51969 600nF 00MHz clamp meter schematic 100L 660V power meters with displays tl0611 45-3-44 0.1m 250 MKT adp 200 Cyrustek PDF

    TBR0618HA1

    Abstract: No abstract text available
    Text: 6 TO 18 GHz TRIPLE-BALANCED MIXER MODELS: TBR0618HA1, TBR0618HA1-S FEATURES TBR0618HA1 • RF/LO coverage . 6 to 18 GHz • IF operation . 0.05 to 5 GHz • LO power range . +17 to +21 dBm • Input 1 dB comp. +13 dBm typical


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    TBR0618HA1, TBR0618HA1-S TBR0618HA1-S TBR0618HA1 TBR0618HA1 PDF

    dc-dc 48 to 5

    Abstract: Cyrustek 100L Cyrustek es519 single chip digital multimeter ES51969 12V DC to 1000V dC converter schematic diagram TL0616 digital AC clamp meter schematic
    Text: ES51969 6,600 Counts Auto DMM • Auto power off 30min/15min Features • Sleep state indicative signal output • 6,600 counts LCD display • Re-power on • 100L QFP package • On-chip buzzer driver • 3V DC power supply • Low battery detection for 3V or 9V battery


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    ES51969 30min/15min) ES51969 600nF 00MHz dc-dc 48 to 5 Cyrustek 100L Cyrustek es519 single chip digital multimeter 12V DC to 1000V dC converter schematic diagram TL0616 digital AC clamp meter schematic PDF

    C60P03Q

    Abstract: C60P04Q
    Text: SCHOTTKY BARRIER DIODE C60P03Q C60P04Q 66A/30~40V FEA TUR ES ° Similar to TO-247AC TO-3P Case ° Dual Diodes - Cathode Common Low forward Voltage Drop • Low Power L o s s , High Efficiency • High Surge Capability • 30 Volts through. 60 Volts Types Available


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    6A/30 C60P03Q C60P04Q O-247AC bbl5123 0Q02102 C60P04Q PDF

    c60p06q

    Abstract: diode 66a C60P05Q
    Text: SCHOTTKY BARRIER DIODE 66A / 50~ 60v cboposq csopobq FEATURES “ Similar to TO-247AC TO-3P Case 5.3(.2Q9) 4.7U 85) o Dual Diodes - Cathode Common ° Low Forward Voltage Drop Low Power Loss, High Efficiency 2.24.087) 3.2U 26). 0.8(.031) M AX • High Surge Capability


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    6A/50 O-247AC I7CTS55 1341UIA C60P05Q C60P06Q a-60V bblS123 c60p06q diode 66a PDF

    C60P03Q

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE C60P03Q C60P04Q 66A/30— 40V 530091 FEATURES •1.7 1851 • Similar to TO-247AC (TO-3P Case L5.9(.ti26l . 3.61.142.1 r-.,A 5.?(.224) 5 3(.208) • Dual Diodes - Cathode Common N N 4.31.169» 3./(. 145Ì » Low forward Voltage Drop


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    O-247AC 6A/30-- C60P03Q C60P04Q ti26l 47U15} 47l215) C60P03Q C60P04Q PDF

    C60P06Q

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE C60P05Q C60P06Q 66A/50— 60V FEATURES °Similar to TO-247AC TO-3P Case 5.31.209) 4.71.1851 . 15.91.626) I* 1 5 .3 Ï6 0 2 ) 5.7( 2241 5.3I.208I ° Dual Diodes - Cathode Common 3 6< 1 4 2 1 . ' 5 4( 1^4) ) O C ° Low Forward Voltage Drop


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    O-247AC 6A/50-- C60P05Q C60P06Q C60P06Q PDF

    Untitled

    Abstract: No abstract text available
    Text: H B 6 6 A 2 5 6 1 6 C A - 2 5 524,288Word X 8bit /262,144Word X 16bit High Density CMOS Static RAM Card ^ H IT A C H I Rev.O sep.10,1992 T he H B 66A 25616C A -25 is a high density 5 1 2 k W o rd X 8bit o r 256kW ord X 16bit static R A M Card, m ounted o f 4pieces 1M static R A M sealed in T S O P package.


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    288Word 144Word 16bit 25616C 256kW 68-pin PDF

    CI 3060 elsys

    Abstract: mav55 ECG592 1N416C microwave diode ecg 588 ci 3060 DIODE Z54 Z11A 1N415C diode Z6 DIODE
    Text: M icrowave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IM PED. Q 30 MHz (Ohms) VSW R Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060


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    1N415C 1N415E 1N416C 1N416E ECG553 ECGG66A ECG580 ECG615A Z13-2 ECG615A CI 3060 elsys mav55 ECG592 1N416C microwave diode ecg 588 ci 3060 DIODE Z54 Z11A 1N415C diode Z6 DIODE PDF

    transistor bsw 67

    Abstract: transistor BD139 PH 71 BC547 BSR512 BCY883 BSW 68 transistor BC548 Transistor 2N2219A Transistor BSX45 PHILIPS PN2222A
    Text: Concise Catalogue 1996 P hilip s Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors GENERAL-PURPOSE LOW-FREQUENCY BIPOLAR TRANSISTORS ratings type num ber P,o. max. mW hpE @ min./max. (V) 'c max. (mA) BC107


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    BC107 BC10B BC140 BC141 BC337 BC337A BC338 BC368 BC517 BC546 transistor bsw 67 transistor BD139 PH 71 BC547 BSR512 BCY883 BSW 68 transistor BC548 Transistor 2N2219A Transistor BSX45 PHILIPS PN2222A PDF

    BA662

    Abstract: sp501 SP501A
    Text: SP501 SIGNAL PROCESSING EXCELLENCE flexiPORT Multi-Mode Serial Transceiver • Supports Industry Standard SoftwareSelectable Protocols: • RS232 V.28 • RS422A (V.11, X.27) • RS423A (V.10, X.26) • RS449 RS485 • V.35 •MIL-STD-188C MIL-STD-188-114A, Unbalanced


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    SP501 RS232 RS422A RS423A RS449 RS485 MIL-STD-188C MIL-STD-188-114A, EIA-562 BA662 sp501 SP501A PDF

    BA662

    Abstract: vn 530 sp 31 x 132 ba 662 rs-449 db37 to db25 SP501A mil188c trw diodes DSR MIL-STD-188-114 SPS01-D
    Text: C ln o v _ ‘ "K W ' SP501 SK'.NA I 1‘FtOU HSINi • IX f.H U N C i flexiPORT Multi-Mode Serial Transceiver • Supports Industry Standard SoftwareSelectable Protocols: • RS232 V.28 • RS422A (V.11, X.27) • RS423A (V.10, X.26) • RS449 RS485


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    SP501 RS232 RS422A RS423A RS449 RS485 MIL-STD-188C MIL-STD-188-114A, EIA-530 BA662 vn 530 sp 31 x 132 ba 662 rs-449 db37 to db25 SP501A mil188c trw diodes DSR MIL-STD-188-114 SPS01-D PDF

    VN66AK

    Abstract: VMOS Transistor VN88AF Siliconix VMOS VN66AF equivalent VN46AF equivalent VN46AF VN98AK VMOS VN88AF SILICONIX
    Text: AN77-2 s Silico n ix APPLICATION NOTE Don’t Trade Off Analog Switch Specs. V M O S -A Solution to High Speed, High Current, Low Resistance Analog Switches Walt Heinzer INTRODUCTION F or analog switches, Vertical MOS VMOS transistors give you a nearly ideal com bination o f characteristics—w ithout


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    VN66AK VN66AK. VMOS Transistor VN88AF Siliconix VMOS VN66AF equivalent VN46AF equivalent VN46AF VN98AK VMOS VN88AF SILICONIX PDF