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    Untitled

    Abstract: No abstract text available
    Text: product brief Intel IXF30001 FEC Transponder Product Description Features • ■ ■ ■ Two 16 x 666Mbps differential LVDScompatible line data I/O Two 16 x 622Mbps differential LVDScompatible payload data I/O 16-channel RS 255,239 error protection scheme, including scrambling per G.975


    Original     		PDF IXF30001 666Mbps 622Mbps 16-channel IXF30001 USA/0101/IK/ASI/DC

    regenerator in optical

    Abstract: IXF30001 STM-64 10Gbps Regenerator
    Text: product brief Intel IXF30001 FEC Transponder Product Description Features • ■ ■ ■ Two 16 x 666Mbps differential LVDScompatible line data I/O Two 16 x 622Mbps differential LVDScompatible payload data I/O 16-channel RS 255,239 error protection scheme, including scrambling per G.975


    Original     		PDF IXF30001 666Mbps 622Mbps 16-channel IXF30001 USA/0101/IK/ASI/DC regenerator in optical STM-64 10Gbps Regenerator

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original     		PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    TC59LM836DKB

    Abstract: TC59LM836DKB-33
    Text: TC59LM836DKB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network


    Original     		PDF TC59LM836DKB-33 288Mbits 152-WORDS 36-BITS TC59LM836DKB

    STM-16

    Abstract: XRT91L81 XRT91L81IB STM-16 LIU B30 ferrite
    Text: PRELIMINARY XRT91L81 2.488/2.666GBPS OC-48/STM-16 SONET/SDH TRANSCEIVER JANUARY 2004 REV. P1.0.3 GENERAL DESCRIPTION an overflow condition. The operation of the device can be monitored by checking the status of the LOCKDET and LOSDET output signals. An on-chip


    Original     		PDF XRT91L81 666GBPS OC-48/STM-16 XRT91L81 OC-48 STM-16 XRT91L81IB STM-16 LIU B30 ferrite

    qfn-44 PACKAGE footprint

    Abstract: No abstract text available
    Text: KIT ATION EVALU E L B AVAILA 19-2215; Rev 6; 10/07 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO


    Original     		PDF MAX3892 622Mbps 622MHz, MAX3892EVKIT MAX3892 mvp/id/3215/t/al 15-Nov-2010 qfn-44 PACKAGE footprint

    HY5DU281622ET

    Abstract: HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4 HY5DU281622ET-5
    Text: HY5DU281622ET 128M 8Mx16 GDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Jan. 2005


    Original     		PDF HY5DU281622ET 8Mx16) 166Mhz 200Mhz) 400mil 66pin HY5DU281622ET HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4 HY5DU281622ET-5

    666Hz

    Abstract: No abstract text available
    Text: 19-2215; Rev 0; 11/01 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis Operating from a single 3.3V supply, this device accepts low-voltage differential-signal LVDS clock and data inputs for interfacing with high-speed digital circuitry, and delivers current-mode logic (CML) serial


    Original     		PDF MAX3892 622Mbps 622MHz, MAX3892 666Hz

    HY5DU281622ET

    Abstract: HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4 HY5DU281622ET-5
    Text: HY5DU281622ET 128M 8Mx16 gDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Jan. 2005


    Original     		PDF HY5DU281622ET 8Mx16) 166Mhz 200Mhz) 400mil 66pin HY5DU281622ET HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4 HY5DU281622ET-5

    TC59LM818DMB-33

    Abstract: TC59LM818DMB
    Text: TC59LM818DMB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB is Network


    Original     		PDF TC59LM818DMB-33 288Mbits 304-WORDS 18-BITS TC59LM818DMB

    K7D803671B

    Abstract: K7D801871B-HC25 K7D801871B-HC30 K7D801871B-HC33 K7D803671B-HC25 K7D803671B-HC30 K7D803671B-HC33
    Text: K7D803671B K7D801871B Preliminary 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. Rev. 0.0 History -Initial document. Draft Data July. 2000 Remark Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance


    Original     		PDF K7D803671B K7D801871B 256Kx36 512Kx18 -HC16 012MAX K7D803671B K7D801871B-HC25 K7D801871B-HC30 K7D801871B-HC33 K7D803671B-HC25 K7D803671B-HC30 K7D803671B-HC33

    Untitled

    Abstract: No abstract text available
    Text: 19-2215; Rev 2; 3/06 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO allows for any static delay between the parallel output


    Original     		PDF MAX3892 622Mbps 622MHz,

    SMPTE-424M

    Abstract: virtex 5 vs spartan 3e adc virtex 4 vs spartan 3e SMPTE424M SIGNAL PATH designer XAPP514 Spartan 3E xilinx adc LMH0040 LMH0051
    Text: SIGNAL PATH designer Tips, tricks, and techniques from the analog signal-path experts No. 113 特集記事. 1-5 シンク ･ セパレータ .4 クロスポイント･スイッチ . 7 非圧縮の1080p60ビデオをサポートする


    Original     		PDF 1080p60 SMPTE-259M] 270Mbps 480i60 SMPTE-292M] 485Gbps 720p60 1080i60 1080p603Gbps SMPTE-424M] SMPTE-424M virtex 5 vs spartan 3e adc virtex 4 vs spartan 3e SMPTE424M SIGNAL PATH designer XAPP514 Spartan 3E xilinx adc LMH0040 LMH0051

    Untitled

    Abstract: No abstract text available
    Text: xr XRT91L80 PRELIMINARY 2.488/2.666GBPS OC-48/STM-16 SONET/SDH TRANSCEIVER JANUARY 2005 REV. P1.0.3 GENERAL DESCRIPTION AUTORST pin can automatically recover from an overflow condition. The operation of the device can be monitored by checking the status of the LOCKDET


    Original     		PDF XRT91L80 666GBPS OC-48/STM-16 XRT91L80 OC-48

    Untitled

    Abstract: No abstract text available
    Text: HY5DU281622ETP 128M 8Mx16 DDR SDRAM HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DU281622ETP 8Mx16) HY5DU281622ETP 728-bit 400mil 66pin

    APD 10gbps

    Abstract: 10Gbps Regenerator GR-253 GR-253-CORE GT10-1550FEC STM-64 APD for 10Gbps gt10 optical transponder gt10-1550 transceiver 10gb 300-pin
    Text: GT10-1550FEC 10Gb/s Transceiver The GT10-1550FEC is a fully integrated, self-contained 10Gbit/s electro-optical data transceiver. Building on the performance and functionality of standard 10Gbit/s transponders, the 1550FEC’s additional features include forward error


    Original     		PDF GT10-1550FEC 10Gb/s GT10-1550FEC 10Gbit/s 1550FEC APD 10gbps 10Gbps Regenerator GR-253 GR-253-CORE STM-64 APD for 10Gbps gt10 optical transponder gt10-1550 transceiver 10gb 300-pin

    Untitled

    Abstract: No abstract text available
    Text: KIT ATION EVALU E L B AVAILA 19-2215; Rev 6; 10/07 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO


    Original     		PDF MAX3892 622Mbps 622MHz, MAX3892EHT+ MAX3892

    MAX3273

    Abstract: MAX3882 MAX3892 MAX3892EGH 1024EP
    Text: KIT ATION EVALU E L B AVAILA 19-2215; Rev 6; 10/07 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO


    Original     		PDF MAX3892 622Mbps 622MHz, MAX3892EHT+ MAX3892 MAX3273 MAX3882 MAX3892EGH 1024EP

    TC59LM818DMG-33

    Abstract: No abstract text available
    Text: TC59LM818DMG-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMG is Network


    Original     		PDF TC59LM818DMG-33 288Mbits 304-WORDS 18-BITS TC59LM818DMG

    Untitled

    Abstract: No abstract text available
    Text: HY5DU281622ETP 128M 8Mx16 GDDR SDRAM HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DU281622ETP 8Mx16) 166Mhz 200Mhz) HY5DU281622ETP 728-bit

    HY5DU281622ETP-5

    Abstract: No abstract text available
    Text: HY5DU281622ETP 128M 8Mx16 GDDR SDRAM HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DU281622ETP 8Mx16) HY5DU281622ETP 728-bit 400mil 66pin HY5DU281622ETP-5

    HY5DU281622ET-4

    Abstract: HY5DU281622ET-36 HY5DU281622ET HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33
    Text: HY5DU281622ET 128M 8Mx16 gDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DU281622ET 8Mx16) 1HY5DU281622ET 166Mhz 200Mhz) 400mil 66pin HY5DU281622ET-4 HY5DU281622ET-36 HY5DU281622ET HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33

    HY5DU281622ET-6

    Abstract: No abstract text available
    Text: HY5DU281622ET 128M 8Mx16 DDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / Oct. 2003


    Original     		PDF HY5DU281622ET 8Mx16) HY5DU281622ET 728-bit 400mil 66pin HY5DU281622ET-6

    zy 406 transistor

    Abstract: zy 406 HY5DU281622ET HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4
    Text: HY5DU281622ET 128M 8Mx16 GDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Jan. 2005


    Original     		PDF HY5DU281622ET 8Mx16) 166Mhz 200Mhz) 400mil 66pin zy 406 transistor zy 406 HY5DU281622ET HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4