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    66263 Price and Stock

    RAF Electronic Hardware 4662-632-B

    3/8_HEX_MALE_FEMALE_STANDOFFS
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    DigiKey 4662-632-B Bulk 442 1
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    Elesa SPA 966263

    VC.192-SST-P (INCH SIZES), LOBE
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    HARTING Technology Group 09662636813

    CONN D-SUB PLUG 15POS R/A SLDR
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    TE Connectivity 2176626-3

    PWR RESISTOR 1230W 5% 10R
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    DigiKey 2176626-3 Box 10 1
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    Weidmüller Interface GmbH & Co. KG 1662630000

    CONN HOOD TOP ENTRY SZ8 PG29
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    DigiKey 1662630000 Bulk 5 1
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    66263 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    662.63 Littelfuse Fuses: 0.630A: 250V Axial Lead and Cartridge Fuses Original PDF
    662630-2 TE Connectivity AMP Connectors Uncategorized - Miscellaneous - BLADE, FRONT SLUG Original PDF

    66263 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    32107

    Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
    Text: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)


    Original     		PDF SST27SF256 SST27SF256 32107 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721

    TA 7644 BF

    Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
    Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:


    Original     		PDF SST31LH041 D16116 TA 7644 BF cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049

    SST39VF200-70-4C-EK

    Abstract: oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK
    Text: 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention


    Original     		PDF 16-Bit) SST39VF200 SST39VF200-70-4C-EK oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK

    Design Considerations for the SST FlashFlex51 Family Microcontroller

    Abstract: Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150
    Text: Design Considerations for the SST FlashFlex51 Family Microcontroller Application Note August 1999 1.0 INTRODUCTION • The following design considerations outline applications of generally accepted PCB design practices to prevent data corruption issues that could be encountered when


    Original     		PDF FlashFlex51 SST89F54/58 Design Considerations for the SST FlashFlex51 Family Microcontroller Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150

    bm1410

    Abstract: ic bm1410 lcd 2004A BV1270 BV1270SIP DISPERSION COMPENSATING FIBER BM1430 TV power transistor akira 21 EX100 CSR 8670
    Text: ANNUAL REPORT 2004 Year ended March 31, 2004 A New Stage of Growth Profile Founded in 1881 by Kibataro Oki, Oki Electric Industry Co., Ltd. was Japan’s first manufacturer of telecommunications equipment. Driven by its progressive spirit, Oki has cultivated its ability to develop new


    Original     		PDF tel-3-3581-5522 bm1410 ic bm1410 lcd 2004A BV1270 BV1270SIP DISPERSION COMPENSATING FIBER BM1430 TV power transistor akira 21 EX100 CSR 8670

    oasis

    Abstract: 29VE020 SST29EE020 SST29LE020 SST29VE020 ms-1307
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020 – 3.0-3.6V for the SST29LE020 – 2.7-3.6V for the SST29VE020 • Superior Reliability


    Original     		PDF SST29EE020 SST29LE020 SST29VE020 SST29EE020 SST29LE020 SST29EE020/29LE020/29VE020 oasis 29VE020 SST29VE020 ms-1307

    Equivalent of sw2 354

    Abstract: sw2 354 8080 microprocessor Architecture Diagram cmos power TCP 8108 oasis F-173
    Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Information FEATURES: • Organized as 512K x16 Flash + 128K x16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation – Read from or write to SRAM while


    Original     		PDF SST32LH802 Sec498404 Equivalent of sw2 354 sw2 354 8080 microprocessor Architecture Diagram cmos power TCP 8108 oasis F-173

    NEXUS FLASH ERASE

    Abstract: 353 flash oasis 32-PIN F01A SST31LH021 31LH021
    Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x8 flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector-Erase and Byte-Program:


    Original     		PDF SST31LH021 ye498404 NEXUS FLASH ERASE 353 flash oasis 32-PIN F01A SST31LH021 31LH021

    a 68063

    Abstract: 67423 68063 69171 69093 69561 67623 69653 E73571 69313
    Text: 62000-69000 SERIES POWER DISTRIBUTION BLOCKS VERSATILE POWER DISTRIBUTION BLOCKS FOR CABLE TERMINATIONS Ferraz Shawmut Power Distribution Blocks afford a safe, convenient way of splicing cables, splitting primary power into a variety of secondary circuits or providing a fixed junction tap-off point. Power


    Original     		PDF U09311 a 68063 67423 68063 69171 69093 69561 67623 69653 E73571 69313

    tekelec TA 355

    Abstract: NEXUS FLASH ERASE oasis SST31LH103
    Text: 1 Megabit Flash + 256 Kilobit SRAM ComboMemory SST31LH103 Advance Information FEATURES: • Organized as 64K x16 Flash + 16K x16 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations 2.7-3.6V without concurrent operation


    Original     		PDF SST31LH103 Cyc316116 tekelec TA 355 NEXUS FLASH ERASE oasis SST31LH103

    oasis

    Abstract: No abstract text available
    Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 • Single 3.0-3.6V Read and Write Operations • Superior Reliability


    Original     		PDF SST39LH512 SST39LH010 SST39LH020 SST39LH040 SST39LH010 oasis

    29VE010A

    Abstract: SW2-303 metatech 300 microtek ups circuit diagram oasis TA 7644 BF SST29EE010A SST29LE010A SST29VE010A
    Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE010A – 3.0-3.6V for the SST29LE010A – 2.7-3.6V for the SST29VE010A • Superior Reliability


    Original     		PDF SST29EE010A SST29LE010A SST29VE010A SST29EE010A SST29LE010A SST29EE010A/29LE010A/29VE010A 29VE010A SW2-303 metatech 300 microtek ups circuit diagram oasis TA 7644 BF SST29VE010A

    27721

    Abstract: Actron diagram ta 306 oasis 29ee020
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020A – 3.0-3.6V for the SST29LE020A – 2.7-3.6V for the SST29VE020A • Superior Reliability


    Original     		PDF SST29EE020A SST29LE020A SST29VE020A SST29EE020A SST29LE020A SST29EE020A/29LE020A/29VE020A 27721 Actron diagram ta 306 oasis 29ee020

    oasis

    Abstract: 32-PIN F01A SST31LH041 Actron
    Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:


    Original     		PDF SST31LH041 D16116 oasis 32-PIN F01A SST31LH041 Actron

    actron ab

    Abstract: 11a18 CHN 949 VF800
    Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention


    OCR Scan     		PDF 16-Bit) SST39VF800Q SST39VF800 SST39VF800Q actron ab 11a18 CHN 949 VF800

    CHN 602

    Abstract: CHN 847
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020 3.0-3.6V for the SST29LE020 2.7-3.6V for the SST29VE020


    OCR Scan     		PDF SST29EE020 SST29LE020 SST29VE020 CHN 602 CHN 847

    CHN 847

    Abstract: chn 734
    Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption


    OCR Scan     		PDF SST29EE010 SST29LE010 SST29VE010 and-1102 CHN 847 chn 734

    CHN 512

    Abstract: CHN 314 1/CHN 852
    Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


    OCR Scan     		PDF SST39SF512 CHN 512 CHN 314 1/CHN 852

    Untitled

    Abstract: No abstract text available
    Text: 512 Kbit /1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • • • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 Superior Reliability Uniform 4 KByte sectors Fast Read Access Time:


    OCR Scan     		PDF SST39LH512 SST39LH010 SST39LH020 SST39LH040 SST39LH010

    Ff-352

    Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
    Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •


    OCR Scan     		PDF 16-Bit) SST39LH160Q SST39LH160 SST39LH160Q Ff-352 Ff352 HE 301 chn 511 CHN 549 chn 440

    TEKELEC te 306

    Abstract: 30601
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A


    OCR Scan     		PDF SST29EE020A SST29LE020A SST29VE020A Reliability526-1102 TEKELEC te 306 30601

    CHN 949

    Abstract: tr/pcb-2-1/TRANSISTOR chn 602
    Text: 21Ü 4 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH041_ Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:


    OCR Scan     		PDF SST31LH041_ CHN 949 tr/pcb-2-1/TRANSISTOR chn 602

    chn 348

    Abstract: CHN 314 chn 317 CHN 852 chn 440
    Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


    OCR Scan     		PDF SST37VF020 32-Pin SST37VF020 chn 348 CHN 314 chn 317 CHN 852 chn 440

    F0513 t

    Abstract: No abstract text available
    Text: FlashFlex51 MCU SST89F54 / SST89F58 Prelim inary Specifications FEATURES: • 8051 Compatible Multi-Purpose 8-bit Microcontroller Unit MCU with Embedded SuperFlash Memory for Design Flexibility Support External Address Range up to 64 KByte of Program and Data Memory


    OCR Scan     		PDF FlashFlex51 SST89F54 SST89F58 16-bitTimer/Counters 128-Byte F0513 t