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    655B Search Results

    655B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD9655BCPZRL7-125 Analog Devices 16Bit 125Msps ADC w/serial LVD Visit Analog Devices Buy
    LTC2655BIGN-H16#PBF Analog Devices 4x I2C 16-/12-B R2R DACs w/ 10 Visit Analog Devices Buy
    LTC6655BHMS8-1.25#PBF Analog Devices 0.25ppm N, L Drift Prec Refs Visit Analog Devices Buy
    LTC6655BHMS8-4.096#PBF Analog Devices 0.25ppm N, L Drift Prec Refs Visit Analog Devices Buy
    ADN4655BRSZ Analog Devices 3.75kVRMS Dual ISO 1Tx1Rx Gbi Visit Analog Devices Buy
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    655B Price and Stock

    Rochester Electronics LLC BUK9606-55B,118

    NEXPERIA BUK9606-55B - POWER FIE
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    DigiKey BUK9606-55B,118 Bulk 9,556 444
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    CUI Devices TS02-66-55-BK-100-LCR-D

    SWITCH TACTILE SPST-NO 0.05A 12V
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    DigiKey TS02-66-55-BK-100-LCR-D Bag 3,975 1
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    CUI Devices TS02-66-55-BK-160-LCR-D

    SWITCH TACTILE SPST-NO 0.05A 12V
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    DigiKey TS02-66-55-BK-160-LCR-D Bag 3,895 1
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    Flip Electronics FDC655BN-G

    MOSFET N-CH 30V 6.3A SUPERSOT6
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    DigiKey FDC655BN-G Reel 3,000 3,000
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    Essentra Components SR-2655B

    RIVET SNAP 0.220" NYLON BLACK
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    DigiKey SR-2655B Bulk 2,667 1
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    Bisco Industries SR-2655B 28
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    DB Roberts SR-2655B
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    Find more 655B price and stock on Findchips.com

    655B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ530

    Abstract: Hitachi DSA00336
    Text: 2SJ530 L ,2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. Outline DPAK–2 4 4 D 1 2 G 1 2 S 3


    Original     		PDF 2SJ530 ADE-208-655B Hitachi DSA00336

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ530 L , 2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. Outline 2SJ530(L),2SJ530(S) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ530 ADE-208-655B Hitachi 2SJ Hitachi DSA002757

    DDR2-667

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ACFT Specifications Features • Density: 4GB • Organization ⎯ 512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package ⎯ 240-pin fully buffered, socket type dual in line


    Original     		PDF EBE41FE4ACFT 240-pin 655-ball 75V/-0 667Mbps M01E0107 E1091E20 DDR2-667

    DDR2-667

    Abstract: EDE5108AJSE-6E-E E1088E20
    Text: PRELIMINARY DATA SHEET 1GB Fully Buffered DIMM EBE11FD8AJFT Specifications Features • Density: 1GB • Organization  128M words x 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line


    Original     		PDF EBE11FD8AJFT 240-pin 655-ball 75V/-0 667Mbps M01E0107 E1088E20 DDR2-667 EDE5108AJSE-6E-E E1088E20

    e1007

    Abstract: EBE11FD8AHFD-6E-E DDR2-533 DDR2-667
    Text: PRELIMINARY DATA SHEET 1GB Fully Buffered DIMM EBE11FD8AHFD Specifications Features • Density: 1GB • Organization  128M words x 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line


    Original     		PDF EBE11FD8AHFD 240-pin 655-ball 75V/-0 667Mbps/533Mbps M01E0107 E1007E30 e1007 EBE11FD8AHFD-6E-E DDR2-533 DDR2-667

    DDR2-667

    Abstract: EDE5108AJSE-6E-E EBE51FD8AJFT
    Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AJFT Specifications Features • Density: 512MB • Organization  64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line


    Original     		PDF 512MB EBE51FD8AJFT 512MB 240-pin 655-ball 75V/-0 667Mbps M01E0107 E1087E20 DDR2-667 EDE5108AJSE-6E-E EBE51FD8AJFT

    H4N7

    Abstract: 655B bd 689
    Text: 53*~35 8696.>?<2 5645 ;:A2< <27.B 3GDRSPGQ X 65B nrdo^cdib ^\k\]dgdot X Ljib `i_pm\i^` .Mdi3 6551555 `g`^omd^\g jk`m\odjin/ X Ji_pnomt no\i_\m_ = jm 66 mjpi_ o`mhdi\gn X Sj^f`on \q\dg\]g` X Wdoc kpnc ]pooji X Shjf` ^jq`m otk` \q\dg\]g` X Fiqdmjih`io\g amd`i_gt kmj_p^o .RjIS ^jhkgd\io/


    Original     		PDF 79VED/ 5VBD485VED NO/65B H4N7 655B bd 689

    Untitled

    Abstract: No abstract text available
    Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb E-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that


    Original     		PDF 240pin 1240pin 512Mx72, HMP151F7EFR4C

    E1242E20

    Abstract: 1024M DDR2-667 D40CS
    Text: PRELIMINARY DATA SHEET 8GB Fully Buffered DIMM EBE82FF4A1RQ Specifications Features • Density: 8GB • Organization  1024M words x 72 bits, 4 ranks • Mounting 36 pieces of 2G bits DDR2 SDRAM with DDP FBGA  DDP: 2 pieces of 1Gb chips sealed in one package


    Original     		PDF EBE82FF4A1RQ 1024M 240-pin 655-ball 667Mbps M01E0706 E1242E20 E1242E20 DDR2-667 D40CS

    EDE1108ACSE-6E-E

    Abstract: DDR2-667 ebe21fe8acfr-6e-e
    Text: DATA SHEET 2GB Fully Buffered DIMM EBE21FE8ACFR Specifications Features • Density: 2GB • Organization  256M words x 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line


    Original     		PDF EBE21FE8ACFR 240-pin 655-ball 667Mbps M01E0706 E1345E20 EDE1108ACSE-6E-E DDR2-667 ebe21fe8acfr-6e-e

    DDR2-667

    Abstract: e1010e
    Text: PRELIMINARY DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ABHT EBE41FE4ABHL Specifications Features • Density: 4GB • Organization  512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM with sFBGA • Package  240-pin fully buffered, socket type dual in line


    Original     		PDF EBE41FE4ABHT EBE41FE4ABHL 240-pin 655-ball 75V/-0 667Mbps M01E0107 E1010E20 DDR2-667 e1010e

    e1240

    Abstract: EBE81FF4ABHT 1024M DDR2-667
    Text: PRELIMINARY DATA SHEET 8GB Fully Buffered DIMM EBE81FF4ABHT Specifications Features • Density: 8GB • Organization  1024M words x 72 bits, 2 ranks • Mounting 36 pieces of 2G bits DDR2 SDRAM with sFBGA • Package  240-pin fully buffered, socket type dual in line


    Original     		PDF EBE81FF4ABHT 1024M 240-pin 655-ball 667Mbps M01E0706 E1240E20 e1240 EBE81FF4ABHT DDR2-667

    E1001E

    Abstract: DDR2-533 DDR2-667 ELPIDA ddr2 elpida DDR2 routing
    Text: PRELIMINARY DATA SHEET 2GB Fully Buffered DIMM EBE21FD4AHFT EBE21FD4AHFE EBE21FD4AHFL Specifications Features • Density: 2GB • Organization  256M words x 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line


    Original     		PDF EBE21FD4AHFT EBE21FD4AHFE EBE21FD4AHFL 240-pin 655-ball 75V/-0 667Mbps/533Mbps M01E0107 E1001E30 E1001E DDR2-533 DDR2-667 ELPIDA ddr2 elpida DDR2 routing

    HYMP151F72CP8

    Abstract: HYMP151F72CP4
    Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb C-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that


    Original     		PDF 240pin 1240pin 1Gx72, HYMP31GF72CMP4D5 HYMP151F72CP8 HYMP151F72CP4

    Untitled

    Abstract: No abstract text available
    Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb B-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that


    Original     		PDF 240pin 1240pin 256Mx72, HYMP525F72BP4

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ACFR Specifications Features • Density: 4GB • Organization  512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line


    Original     		PDF EBE41FE4ACFR 240-pin 655-ball 667Mbps M01E0706 E1344E10

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 4GB Fully Buffered DIMM EBE42FE8ACFR Specifications Features • Density: 4GB • Organization  512M words x 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line


    Original     		PDF EBE42FE8ACFR 240-pin 655-ball 667Mbps M01E0706 E1328E20

    BGA676

    Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
    Text: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18


    Original     		PDF BGA16A1ATTERNS BGA676 BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X

    hynix DDR2 800 1GB SO DIMM

    Abstract: HMP564F7FFP8C
    Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that


    Original     		PDF 240pin 1240pin 256Mx72, HMP525F7FFP4C hynix DDR2 800 1GB SO DIMM HMP564F7FFP8C

    G1966M SAW FILTER

    Abstract: 8 PIN SMD IC 314-150 k3264 K2977M L9453M ofw g 3254 b684 saw filter k6272k K9260M SIEMENS saw filter 44 MHz M3951M
    Text: Siemens Matsushita Components One Port Resonators Center Frequency MHz 239,75 297,80 303,83 304,25 304,30 308,50 314,50 315,00 315,00 315,00 345,00 390,00 392,85 403,05 403,55 407,25 417,50 418,00 423,17 Type Frequency Frequency Insertion Tolerance Tolerance Attenuation


    Original     		PDF

    omron 8567

    Abstract: crouzet 88 810.1 AQH2223 equivalent OMRON 1230 opto 12VDC sf 249 crouzet 88 810.0 Automation Controls panasonic - elevator door controller manual seiko lcd m3214 crouzet 88 810.0 coto reed relay 2063
    Text: ELECTROMECHANICAL Switches Basic / Snap Switches Cherry Electrical Products . . . . . . . . . . 1819, 1820, 1821 Mountain Switch . . . . . . . . . . Available at mouser.com Honeywell . . . . . . . . . . . . . . . . . . 1822, 1823, 1824 Omron . . . . . . . . . . . . . 1825, 1826, 1827, 1829, 1830


    Original     		PDF

    DDR2-533

    Abstract: DDR2-667
    Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AHFD Specifications Features • Density: 512MB • Organization  64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line


    Original     		PDF 512MB EBE51FD8AHFD 512MB 240-pin 655-ball 75V/-0 667Mbps/533Mbps M01E0107 E1009E30 DDR2-533 DDR2-667

    MPC5555

    Abstract: MPC555LFCVR40 8011 dfn MPC555LFMVR40 3 pin 433 mhz rf module MPC555LFAZP40 SC51165 603 6xe
    Text: 03&  03& 86 5 6 0$18$/ 5HYLVHG  2FWREHU   &RS\ULJKW  027252/$ $OO 5LJKWV 5HVHUYHG 03&  03& 86(5©6 0$18$/ 5HYLVHG  2FWREHU   &RS\ULJKW  027252/$ $OO 5LJKWV 5HVHUYHG 3DUDJUDSK 1XPEHU 7$%/( 2 &217(176 35()$&( 3DJH


    Original     		PDF 352verter MPC555LFAVR40 MPC555LFAZP40 MPC555LFCVR40 MPC555LFCZP40 MPC555LFMVR40 MPC555LFMZP40 MPC555LFMZP40R2 SC511653MZP40R2 SC511658MZP40 MPC5555 8011 dfn 3 pin 433 mhz rf module SC51165 603 6xe

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 2GB Fully Buffered DIMM EBE21FD4AGFD EBE21FD4AGFN Specifications Features • Density: 2GB • Organization  256M words x 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line


    Original     		PDF EBE21FD4AGFD EBE21FD4AGFN 240-pin 655-ball 75V/-0 667Mbps/533Mbps M01E0107 E0868E20