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    64K BIT STATIC RAM Search Results

    64K BIT STATIC RAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    6167LA100DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167LA70DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation

    64K BIT STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ph44

    Abstract: 71V016 IDT71V016
    Text: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT  COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM


    Original     		PDF IDT71V016 16-BIT) 15/20/25ns 44-pin IDT71V016 576-bit ph44 71V016

    IDT71016

    Abstract: No abstract text available
    Text: IDT71016 CMOS STATIC RAM 1 MEG 64K x 16-BIT  COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71016 CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times


    Original     		PDF IDT71016 16-BIT) 15/20/25ns 44-pin IDT71016 576-bit

    71V016

    Abstract: datasheet for 64K RAM ph44 IDT71V016
    Text: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times


    Original     		PDF IDT71V016 16-BIT) 15/20/25ns 44-pin IDT71V016 576-bit 200mV 71V016 datasheet for 64K RAM ph44

    125OC

    Abstract: IDT7187 IDT7187L IDT7187S
    Text: IDT7187S IDT7187L CMOS Static RAM 64K 64K x 1-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available.


    Original     		PDF IDT7187S IDT7187L IDT7187 536-bit IDT7187 IDT7187S/L 11/xx/99 x4033 125OC IDT7187L IDT7187S

    Untitled

    Abstract: No abstract text available
    Text: IDT7187S IDT7187L CMOS Static RAM 64K 64K x 1-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available.


    Original     		PDF IDT7187S IDT7187L 25/35/45/55/70/85ns 22-pin MIL-STD-883, IDT7187 536-bit D22-1) IDT7187S/L

    7187L55

    Abstract: 7187L45
    Text: IDT7187S IDT7187L CMOS Static RAM 64K 64K x 1-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available.


    Original     		PDF IDT7187S IDT7187L IDT7187 536-bit IDT7187 D22-1) IDT7187S/L 11/xx/99 x4033 7187L55 7187L45

    TIM CS

    Abstract: 125OC IDT7187 IDT7187L IDT7187S a7122 7187L45
    Text: IDT7187S IDT7187L CMOS Static RAM 64K 64K x 1-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available.


    Original     		PDF IDT7187S IDT7187L IDT7187 536-bit IDT7187 D22-1) IDT7187S/L 11/xx/99 TIM CS 125OC IDT7187L IDT7187S a7122 7187L45

    101490

    Abstract: datasheet for 64K RAM ECL-10K SO24-4 1 bit sram DSC8001
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM Integrated Device Technology, Inc. IDT10490 IDT100490 IDT101490 FEATURES: DESCRIPTION: • • • • • • • • The IDT10490, IDT100490 and IDT101490 are 65,536-bit high-speed BiCMOS ECL static random access memories


    Original     		PDF IDT10490 IDT100490 IDT101490 IDT10490, IDT100490 IDT101490 536-bit ECL-10K ECL-100K ECL-101K 101490 datasheet for 64K RAM ECL-10K SO24-4 1 bit sram DSC8001

    101490

    Abstract: DSC8001 SRAM 64Kx1
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM  Integrated Device Technology, Inc. IDT10490 IDT100490 IDT101490 FEATURES: DESCRIPTION: • • • • • • • • The IDT10490, IDT100490 and IDT101490 are 65,536-bit high-speed BiCMOS ECL static random access memories


    Original     		PDF IDT10490 IDT100490 IDT101490 IDT10490, IDT100490 IDT101490 536-bit ECL-10K ECL-100K ECL-101K 101490 DSC8001 SRAM 64Kx1

    A1320

    Abstract: 6116 CMOS RAM IDT71V016 SO44-2
    Text: IDT71V016 3.3V CMOS Static RAM 1 Meg 64K x 16-Bit Features Description ◆ The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology,


    Original     		PDF IDT71V016 16-Bit) IDT71V016 576-bit 71V016SA. S-0003 x4033 A1320 6116 CMOS RAM SO44-2

    Untitled

    Abstract: No abstract text available
    Text: CMOS Static RAM 1 Meg 64K x 16-Bit IDT71016S/NS Features Description ◆ The IDT71016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with


    Original     		PDF 16-Bit) IDT71016S/NS IDT71016 576-bit

    datasheet for 64K RAM

    Abstract: IDT71016 SO44-2 71016s 71016
    Text: CMOS Static RAM 1 Meg 64K x 16-Bit IDT71016 Features Description ◆ The IDT71016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with


    Original     		PDF 16-Bit) IDT71016 IDT71016 576-bit datasheet for 64K RAM SO44-2 71016s 71016

    Untitled

    Abstract: No abstract text available
    Text: IDT 7MP456 256K 64K x 4-BIT C M O S STATIC RAM PLASTIC SIP M ODULE FEATURES: DESCRIPTION: • High-density 256K (64K x 4) CMOS static RAM module The IDT7MP456 is a 256K (64K x 4-bit) high-speed static RAM m odule constructed on an epoxy laminate surface using four


    OCR Scan     		PDF 28-pin IDT7187 7MP456 200mV IDT7MP456 8MP456 S13-182

    Untitled

    Abstract: No abstract text available
    Text: i Integrated DeviceTechnolc>3y Inc 256K 64K x 4-BIT CM O S STATIC RAM PLASTIC SIP M O DULE IDT7MP456 FEATURES: DESCRIPTION: • High-density 256K (64K x 4) CMOS static RAM module The IDT7MP456 is a 256K (64K x 4-bit) high-speed static RAM module constructed on an epoxy laminate surface using four


    OCR Scan     		PDF IDT7MP456 IDT7MP456 IDT7187 28-pln 8MP456

    DSC-703

    Abstract: No abstract text available
    Text: IDT 7MC4018 64K x 6 CMOS STATIC RAM CERAMIC SIP MODULE WITH SEPARATE DATA I/O FEATURES: DESCRIPTION: • High-density 64K x 6 CMOS static RAM module The IDT7MC4018 isa 64K x 6-bit high-speed static RAM module constructed on a co-fired ceram ic substrate using six IDT7187


    OCR Scan     		PDF 40-pin IDT7187S, MIL-STD-883, 7MC4018 DSC-703

    M67A

    Abstract: MCM67A618AFN15 xsxx
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 64K x 18 Bit Asynchronous/ Latched Address Fast Static RAM MCM67A618A The MCM67A618A is a 1,179,648 bit latched address static random access memory organized as 65,536 words of 18 bits. The device integrates a 64K x 18


    OCR Scan     		PDF MCM67A618A MCM67A618A 67A618A MCM67A618AFN10 MCM67A618AFN12 MCM67A618AFN15 M67A MCM67A618AFN15 xsxx

    EDI8808CB

    Abstract: No abstract text available
    Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, MIL-STD-883, D02VSS A0-A12

    101490

    Abstract: No abstract text available
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM IDT10490 IDT100490 IDT101490 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT10490, IDT100490 and IDT101490 are 65,536-bit high-speed BiCEMOS ECL static random access memo­


    OCR Scan     		PDF IDT10490 IDT100490 IDT101490 536-words IDT10490, IDT101490 536-bit IDT100490, 101490

    MCM67A618B

    Abstract: MCM67A618BFN10
    Text: MOTOROLA Order this document by MCM67A618B/D SEMICONDUCTOR TECHNICAL DATA MCM67A618B Advance Information 64K x 18 Bit Asynchronous/ Latched Address Fast Static RAM The MCM67A618B is a 1,179,648 bit latched address static random access memory organized as 65,536 words of 18 bits. The device integrates a 64K x 18


    OCR Scan     		PDF MCM67A618B/D MCM67A618B MCM67A618B MCM67A618BFN10

    Untitled

    Abstract: No abstract text available
    Text: L7C187 64K x 1 Static RAM Features_ Description_ □ 64K by 1 Static RAM with separate I/O , Chip Select power down The L7C187 is a high-performance, low-power CMOS static Random Access Memory. The storage circuitry is organized as 65,536 words by 1 bit


    OCR Scan     		PDF L7C187 L7C187

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS62253A PRELIMINARY 64K x 4 CMOS Static RAM FEATURES DESCRIPTION Fast Access Times: 20/25 ns The MS62253A is a very high speed 256K-bit static RAM organized as 64K x 4. Fully static in operation. Chip Enable E reduces power to the chip when inactive


    OCR Scan     		PDF MS62253A MS62253A 256K-bit 28-Pin, 300-MIL MS62253A-20NC P28-7 MS62253A-20RC

    7m812

    Abstract: IDT7M S1319 Idt7m812
    Text: 512K 6 4 K x 8-BIT or 64K x 9-BIT C M O S STATIC RAM M ODULE IDT 7M812 IDT 7M912 FEATURES: DESCRIPTION: • High-density 512K-bi1 C M O S static RAM module • 64K x 8 (IDT7M 812) or 64K x 9 (IDT7M 912) configuration • Fast access times The ID T7M 812/ID T7M 912 are 512K-bit high-speed CM OS


    OCR Scan     		PDF 512K-bi1 240yW IDT7187 7M812 7M912 812/ID MIL-STD-883, 7M912 IDT7M S1319 Idt7m812

    A3738

    Abstract: CA1023 8kx8 sram
    Text: ^EDI _ EDI8808CB Electronic Designs Inc High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory • Access Times 20,25,35, and 45ns


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, D02VSS 0-A12 A3738 CA1023 8kx8 sram

    Untitled

    Abstract: No abstract text available
    Text: MOSEL / — MS62253A 64K x 4 CMOS Static RAM ^ FEATURES DESCRIPTION • Fast Access Times: 20/25 ns The MS62253A is a very high speed 256K-bit static RAM organized as 64K x 4. Fully static in operation. Chip Enable E reduces power to the chip when inactive


    OCR Scan     		PDF MS62253A MS62253A 256K-bit 200mV MS62253A-20NC MS62253A-20RC MS62253A-25NC NIS62253A-25RC P28-7 R28-1