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    647 TRANSISTOR Search Results

    647 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    647 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A115G

    Abstract: 94S-525-A115G DTA115GKA DTA115GUA DTC115GKA DTC115GUA c115g
    Text: Transistors DTA115GUA / DTA115GKA DTC115GUA / DTC115GKA 94S-525-A115G (94S-647-C115G) 471


    Original     		DTA115GUA DTA115GKA DTC115GUA DTC115GKA 94S-525-A115G) 94S-647-C115G) A115G 94S-525-A115G DTA115GKA DTC115GKA c115g PDF

    BO 649

    Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
    Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington


    OCR Scan     		0235bQS T-33-29 OP-66) 643/BD 645/BD BD643. 0QQ43 T-33-29 BD647 BO 649 BD 104 darlington bd 645 TOP-66 b 647 c BD 649 BD64S Q62702-D376 BD 104 NPN PDF

    G104039LF

    Abstract: Fairchild SOT-23 2N7002 N Channel Mosfet SOT-23 12W SOT-363 mosfet 120 volt dimmer circuit with triac R11 SOP4 NEC SLUU435B TPS92210EVM-647 varistor mv-12 dual channel triac optocoupler
    Text: Using the TPS92210EVM-647 User's Guide Literature Number: SLUU435B September 2010 – Revised December 2010 User's Guide SLUU435B – September 2010 – Revised December 2010 Natural PFC LED Lighting Driver Controller 1 Introduction The TPS92210EVM-647 evaluation module is a constant current TRIAC dimmable LED driver. It can drive


    Original     		TPS92210EVM-647 SLUU435B SLUU435B TPS92210EVM-647 TPS92219EVM-647 TPS92210 G104039LF Fairchild SOT-23 2N7002 N Channel Mosfet SOT-23 12W SOT-363 mosfet 120 volt dimmer circuit with triac R11 SOP4 NEC varistor mv-12 dual channel triac optocoupler PDF

    8D649

    Abstract: 8D648 BD646
    Text: K MAGNA Yffiffi 8D645; 647 BD6a9; 651 SILICONDARLINGTON POWERTRANSISTORS N-P-Nepitaxialbasetransistorsin monolithic Darlingtoncircuit for audiooutput stagesand general amplifierand switchingapplications;fO-22Oplasticenvelope. P-N-Pcomplements are BD646,8D648,


    Original     		8D645; O-22O BD646 8D648, 8D649 LE50t 8D648 PDF

    BD 649

    Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
    Text: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SHD419205 PNP SHD419305 NPN SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 647, REV. A Complementary Bi-Polar Power Transistors NPN / PNP Designed for use as high-frequency drivers in audio amplifiers. SHD419205S PNP / SHD419305S (NPN) - S-100 (JANTX) Screening


    Original     		SHD419205 SHD419305 SHD419205S SHD419305S S-100 150Vdc PDF

    BD648

    Abstract: BD650 BD646 BD652
    Text: SavantIC Semiconductor Product Specification BD646/648/650/652 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and


    Original     		BD646/648/650/652 O-220C BD645/647/649/651 BD646 BD648 BD650 BD652 BD648 BD650 BD646 BD652 PDF

    IC 651

    Abstract: BDS643 BDS645 BDS647 BDS649 BDS651
    Text: Philips Com ponents BDS643/645/647/649/651 Data sheet status Product specification date o f issue AprS 1991 NPN silicon Daiiington power transistors PINNING -SO T223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 NPN epitaxial base transistors in a


    OCR Scan     		BDS643/645/647/649/651 OT223, BDS644/646/648/650/652. -SOT223 BDS643 BDS645 BDS647 BDS649 BDS651 IC 651 PDF

    BD649

    Abstract: BD647 BD645 BD651 IC 651 PC 649
    Text: SavantIC Semiconductor Product Specification BD645/647/649/651 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD646/648/650/652 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and


    Original     		BD645/647/649/651 O-220C BD646/648/650/652 BD645 BD647 BD649 BD651 BD649 BD647 BD645 BD651 IC 651 PC 649 PDF

    BD645

    Abstract: bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646
    Text: SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.


    Original     		BD643/645/647/649/651 O-220 BD644, BD646, BD648, BD650 BD652 BD643 BD645 BD647 BD645 bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general


    OCR Scan     		BDS643/645/647/649/651 -SOT223 OT223, BDS644/646/648/650/652. bbS3T31 0034bt bbS3T31 0034bl0 DQ34bll PDF

    IC 651

    Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651
    Text: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION


    OCR Scan     		DD4314b BDS643/645/647/649/651 r-33-z OT223, BDS644/646/648/650/652. -SOT223 BDS643 BDS645 BDS647 BDS649 IC 651 BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651 PDF

    transistor bd650

    Abstract: BD648 BD646 BD652 BD644 BD650 IC 651
    Text: BD643/645/647/649/651 SILICON NPN DAELINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.


    Original     		BD643/645/647/649/651 O-220 BD644, BD646, BD648, BD650 BD652 BD644 BD646 BD648 transistor bd650 BD648 BD646 BD652 BD644 IC 651 PDF

    ic timer relay

    Abstract: 12V Timer RELAY WT2223
    Text: R&E International, Inc. 647 Clark Avenue, King of Prussia, PA 19406 WORLDTRONICS INTERNATIONAL CLOCK TIMER Specification number: RE222 I.C. Identification number: WT2223 Designed for use in oven ranges the RE222 can be used in a variety of AC power supply clock timer applications.


    Original     		RE222 WT2223 RE222 RE222r050928 ic timer relay 12V Timer RELAY WT2223 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 H A R R IS fCL644/645/646/647 ICL7644/7645/7646/7647 The ICL644, ICL645 and ICL646 are low power fixed +5V output step-up DC-DC converters designed for operation from very low input voltages. All control functions and a power FET are contained in the ICL644, ICL645 and


    OCR Scan     		fCL644/645/646/647 ICL7644/7645/7646/7647 MAX65X ICL644 ICL7644 IRF541 PDF

    Untitled

    Abstract: No abstract text available
    Text: b?E ]> bb53T31 0 Q 2 3 C12C1 647 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue July 1993 _ FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.


    OCR Scan     		bb53T31 BSS192 A/-10 bb53t MC073B PDF

    BD 649

    Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
    Text: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington


    OCR Scan     		fl23SLQS T-33-29 OP-66) 643/BD 645/BD BD647. BD843, BD645. BD647, BD 649 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65 PDF

    MAX2XX

    Abstract: BD645 BD646 BD648 BD649 BD650 BD651 BD652 sb 649 a 2 sb 647
    Text: BD645; 647 BD649; 651 SILICON DARLINGTON POWER TRANSISTORS N-P-N e p ita x ia l base tran sistors in m o n o lith ic D a rlin g to n c irc u it fo r audio o u tp u t stages and general a m p lifie r and sw itch in g a p p lica tio n s; T 0 -2 2 0 plastic envelope. P-N-P co m p le m en ts are B D 646, B D 648,


    OCR Scan     		BD645; BD649; O-220 BD646, BD648, BD650 BD652. BD645 MAX2XX BD646 BD648 BD649 BD651 BD652 sb 649 a 2 sb 647 PDF

    hp ms 7647

    Abstract: harris 7644 la 7646 764X ICL764X 187Ly 7646 7647
    Text: S i. It 2 >991 IC L 6 4 4 /6 4 5 /646/647 IC L 7 6 4 4 /7 645/7646/7647 2 HARRIS July 1991 Low V o lta g e S te p -U p C o n verters F e a tu re s D e s c rip tio n • +5V @ 40mA From a Single Cell Battery The ICL644, IC L645 and IC L646 are low pow er fixed +5V


    OCR Scan     		ICL644/645/646/647 CL7644/7645/7646/7647 MAX65X 4-20mA ICL644, hp ms 7647 harris 7644 la 7646 764X ICL764X 187Ly 7646 7647 PDF

    2n2222 -331 transistors

    Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
    Text: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111


    OCR Scan     		BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C 2n2222 -331 transistors 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132 PDF

    BD651

    Abstract: No abstract text available
    Text: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 envelope. They are intended fo r output stages in audio equipment, general amplifiers, and analogue switching


    OCR Scan     		BD643; BD645; BD647; BD649; BD651_ O-220 BD644, BD646, BD648, BD650 BD651 PDF

    B0645

    Abstract: BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851
    Text: BD643; BD645; BD647; BD649; Ì B D 6 5 1 _ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T0-220 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


    OCR Scan     		BD643; BD645; BD647; BD649; BD651 T0-220 BD644, BD646, BD648, BD650 B0645 BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851 PDF

    TYP 513 309

    Abstract: philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144
    Text: Philips Semiconductors Surface mounted transistors Selection guide GENERAL PURPOSE APPLICATIONS hFE TYPE NUMBER V CEO •c V (mA) fr Plot (mw) min. max. typ (MHz) PAGE NPN BC817 45 500 250 100 600 200 159 BC818 25 500 250 100 600 200 159 BC846 65 100 250


    OCR Scan     		BC817 BC818 BC846 BC847 BC848 BC868 BCP54 BCP55 BCP56 BCP68 TYP 513 309 philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144 PDF

    transistor BD6

    Abstract: bd645 transistor BD643 H 649 A transistor
    Text: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


    OCR Scan     		BD643; BD645; BD647; BD649; BD651 7110fi2b BD644, BD646, BD648, BD650 transistor BD6 bd645 transistor BD643 H 649 A transistor PDF