6427 TRANSISTOR Search Results

6427 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

6427 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
6427 darlington transistor Abstract: Q68000-A8320 Text: NPN Silicon Darlington Transistor SMBT 6427 For general amplifier applications ● High collector current ● High current gain ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E C Maximum Ratings	Original	Q68000-A8320 OT-23 6427 darlington transistor Q68000-A8320	PDF
Untitled Abstract: No abstract text available Text: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCContigui ation 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E	OCR Scan	Q68000-A8320 OT-23 aE35bD5 D1EE571 235bD5	PDF
6427 darlington transistor Abstract: No abstract text available Text: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCtanfigu ration 1 2 3 Package1) S M B T 6427 s1V Q68000-A8320 B SOT-23	OCR Scan	Q68000-A8320 OT-23 6427 darlington transistor	PDF
Untitled Abstract: No abstract text available Text: BEE D • ö53b32Q QQ175SS b WÊSIP NPN Silicon Darlington Transistor SMBT 6427 _ SIEMENS/ SPCLi SEMICONDS T-Z'l -X*? _ • For general amplifier applications • High collector current • High current gain Type Marking Ordering code for versions in bulk	OCR Scan	53b32Q QQ175SS 23b320	PDF
2SK784 Abstract: No abstract text available Text: 6427 52 5 N E C ELECTRON ICS INC 98D 18928 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Tfl • t427S2S 3 I _ _ _ 2SK784 DESCRIPTION The 2SK784 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters. FEA TU R ES	OCR Scan	t427sas 2SK784 2SK784	PDF
Untitled Abstract: No abstract text available Text: Central' C M P T 6427 Sem iconductor Corp. NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT6427 type is a NPN Silicon Darlington Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications	OCR Scan	CMPT6427 OT-23 500mA, 500mA 100MHz 100kQ,	PDF
2SJ122 Abstract: 2SJ128-Z 3919 Text: 642 75 25 N E C N EC ELE CT RONIC S INC 98D 19027 ELECTRONICS INC ~ iß D T'-Jr-/? DE \| b427555 001^057 3 y / lELETRGN DEVICE MOS FIELD EFFECT POWER TRANSISTOR . / Ä ^ ^ ^ Ä _ 2 S J 1 2 S - Z FAST SWITCHING P-CHANNE1 SILICON POW ER MOS FzT INDUSTRIAL USE	OCR Scan	b4B755S 0DnG27 2SJ128-Z T-39-19 12SJ128-2 2SJ122 2SJ128-Z 3919	PDF
a42e Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn Text: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless	Original	OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 a42e IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn	PDF
transistor 2222a Abstract: No abstract text available Text: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most	OCR Scan	14-pin TPQA06 TPQA55 TPQA56 PSA55 PSA56 2N2907 2N3904 2N3906 transistor 2222a	PDF
MPS3708 Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830 Text: Small Signal Transistors TO-92 Case Continued TO-92 TY P E NO. FAM ILY LEAD v CBO v CEO h FE v EBO >CBO 48 v CBO « v CE @ lc TO-92-18R V CE(S; VT) 'C C „b T NF ‘ off CO D E (V ) (V ) •TO-92-18R MIN V C ES MIN (V ) (nA) MIN *'C E V (V ) (V )	OCR Scan	O-92-18R O-92-18R 2N5812 2N5813 2N5816 2N5817 2N5818 MPS3415 MPS3702 MPS3704 MPS3708 2N5819 2N5822 2N5823 2N5830	PDF
2SK736 Abstract: No abstract text available Text: R á 7 7 525 N E C E C ELECTRONICS INC ELE CT RO NI CS INC _ ~Tfl D T-3^ - 98D 18908 »F§m57S2S □□IflTOfl ñ N-CHANNEL M O S FIELD EFFECT POWER TRANSISTOR 2SK736 D ESCRIPTIO N The 2SK736 is N-Channel MOS Field Effect Power Transistor PA C KAG E D IM EN SIO N S	OCR Scan	2SK736 Li427SE5 tdiof11â	PDF
U15 transformer Abstract: horizontal deflection circuit Horizontal-Deflection Output transformer CD 7640 1200 w 45 khz transformer IC 3263 datasheet 6 pins IC cbe CU15/35 philips 1n4148 1N4148 Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET 078 Horizontal deflection transistors for 17", 70 kHz monitors Using Philips’ CU15/35 drive transformer and BU4525AF/AX transistor Most 17" monitor designs for PCs are required to operate up	Original	CU15/35 BU4525AF/AX U15 transformer horizontal deflection circuit Horizontal-Deflection Output transformer CD 7640 1200 w 45 khz transformer IC 3263 datasheet 6 pins IC cbe philips 1n4148 1N4148	PDF
CD 7640 Abstract: U15 transformer horizontal deflection circuit nf 817 1N4148 BC337A BY359X-1500S BYV28-50 BZX79C6V8 philips BC Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET 078 Horizontal deflection transistors for 17", 70 kHz monitors Using Philips’ CU15/35 drive transformer and BU4525AF/AX transistor Most 17" monitor designs for PCs are required to operate up	Original	CU15/35 BU4525AF/AX CD 7640 U15 transformer horizontal deflection circuit nf 817 1N4148 BC337A BY359X-1500S BYV28-50 BZX79C6V8 philips BC	PDF
DM74LS365A Abstract: DM74LS365AN 54LS365A 54LS365ADMQB 54LS365AFMQB 54LS365ALMQB DM54LS365A DM54LS365AJ DM54LS365AW DM74LS265AM Text: 54LS365A DM54LS365A DM74LS365A Hex TRI-STATE Buffers General Description This device contains six independent gates each of which performs a non-inverting buffer function The outputs have the TRI-STATE feature When enabled the outputs exhibit the low impedance characteristics of a standard LS output	Original	54LS365A DM54LS365A DM74LS365A DM74LS365A DM74LS365AN 54LS365ADMQB 54LS365AFMQB 54LS365ALMQB DM54LS365AJ DM54LS365AW DM74LS265AM	PDF

Untitled Abstract: No abstract text available Text: Philips Semiconductors’ new SiliconMAXTM power MOSFET range - a next generation development of the company’s advanced TrenchMOS technology - brings the benefits of ultra-low RDS on and high-speed switching to applications requiring transistors with voltage	Original	SCS63	PDF
AN 6752 Abstract: msc925 AN 6752 japan Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET NIJ004 Double Polysilicon – the technology behind silicon MMICs, RF transistors & PA modules Higher frequencies and greater levels of integration for mobile communications emitter base	Original	NIJ004 SCS60 AN 6752 msc925 AN 6752 japan	PDF
STR 6707 Abstract: bf872 Text: DISCRETE SEMICONDUCTORS BF872 PNP high-voltage transistor 1999 Apr 21 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF872 FEATURES • Low feedback capacitance.	OCR Scan	BF872 aTO-202 BF871. BF872 O-202) SCA63 5002/00/04/pp8 STR 6707	PDF
philips e3 Abstract: BP317 BU506 BU506D BU508D Text: DISCRETE SEMICONDUCTORS Philips Semiconductors Product specification Silicon diffused power transistors BU506; BU506D DESCRIPTION High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode.	OCR Scan	BU506; BU506D SCA55 philips e3 BP317 BU506 BU506D BU508D	PDF
2108 npn transistor Abstract: TRANSISTOR D 471 2PC945P Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 2PC945 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 26 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC945 FEATURES PINNING	Original	M3D186 2PC945 2PA733. MAM259 115002/03/pp8 2108 npn transistor TRANSISTOR D 471 2PC945P	PDF
bc516 Abstract: bc517 BC517 data sheet Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 16 1999 Apr 23 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA	Original	M3D186 BC516 BC517. MAM303 SCA63 115002/00/03/pp8 bc516 bc517 BC517 data sheet	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 2PD1820A NPN general purpose transistor Product specification Supersedes data of 1997 May 22 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistor 2PD1820A FEATURES	Original	M3D187 2PD1820A SC-70; OT323 2PB1219A. SCA63 115002/00/02/pp8	PDF
2108 npn transistor Abstract: 2PC1815 TRANSISTOR D 471 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 28 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 PINNING FEATURES	Original	M3D186 2PC1815 2PA1015. MAM259 115002/03/pp8 2108 npn transistor 2PC1815 TRANSISTOR D 471	PDF
bc517 Abstract: StR 40000 or transistor transistor BC517 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA	Original	M3D186 BC517 BC516. MAM302 SCA63 115002/00/04/pp8 bc517 StR 40000 or transistor transistor BC517	PDF
marking code IC .ztz Abstract: ZtZ MARKING PUMX1 marking ztz sot363 Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 PUMX1 NPN general purpose double transistor Preliminary specification Supersedes data of 1997 Jul 09 1999 Apr 14 Philips Semiconductors Preliminary specification NPN general purpose double transistor	Original	MBD128 SC-88 SCA63 115002/00/03/pp8 marking code IC .ztz ZtZ MARKING PUMX1 marking ztz sot363	PDF

6427 TRANSISTOR Search Results

6427 TRANSISTOR Result Highlights (5)

6427 TRANSISTOR Datasheets Context Search

6427 darlington transistor

Untitled

6427 darlington transistor

Untitled

2SK784

Untitled

2SJ122

a42e

transistor 2222a

MPS3708

2SK736

U15 transformer

CD 7640

DM74LS365A

Untitled

AN 6752

STR 6707

philips e3

2108 npn transistor

bc516

Untitled

2108 npn transistor

bc517

marking code IC .ztz