HD6413003F16
Abstract: hd6413002f16 HD6473042F16 TL084-LM324 piezo autotransformer HD6413004F16 HD6413005F16 laptop inverter SCHEMATIC TRANSISTOR 6N138 SPICE HD6413003F-16
Text: INDEX Order Code Description Manufacturer 549-435 549-447 642-666 ZM33064C 789-239 ZSD1000D8 789-276 663-232 663-244 707-790 TD300IN 787-346 TSH10IN TSH11IN TS271CN TS274ID TS902IN TS912IN TS3V393IN TS3702ID 789-872 — 789-859 — OPT101P BUF634P 789-744
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ZM33064C
ZSD1000D8
TD300IN
TSH10IN
TSH11IN
TS271CN
TS274ID
TS902IN
TS912IN
TS3V393IN
HD6413003F16
hd6413002f16
HD6473042F16
TL084-LM324
piezo autotransformer
HD6413004F16
HD6413005F16
laptop inverter SCHEMATIC TRANSISTOR
6N138 SPICE
HD6413003F-16
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SENSOR CON EFECTO HALL
Abstract: Receptor optico Best pioneer car dvd service manual, laser optico 13ES X 33 amplificador Toshiba hay 22 akai hitachi dolby surround malayalam
Text: 3-865-642-31 1 CD/DVD Player Operating Instructions EN Manual de instrucciones ES PT 1 2 3 4 5 6 7 8 9 DVP-S530D 1999 by Sony Corporation WARNING To prevent fire or shock hazard, do not expose the unit to rain or moisture. To avoid electrical shock, do not open the cabinet.
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DVP-S530D
SENSOR CON EFECTO HALL
Receptor optico Best
pioneer car dvd service manual,
laser optico
13ES X 33
amplificador
Toshiba hay 22
akai
hitachi dolby surround
malayalam
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D472M39Z5UN
Abstract: Y5p philips disc ceramic cap D122K 104 Ceramic Disc Capacitors
Text: Philips Components Product specification Class 1 and 2, 1/2/3/6 kV general purpose Ceramic disc capacitors FEATURES QUICK REFERENCE DATA • Low losses • High stability DESCRIPTION VALUE Capacitance range: • High capacitance in small size Class 1 10 to 270 pF
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mm/20
CCA877
CCA878
D472M39Z5UN
Y5p philips disc ceramic cap
D122K
104 Ceramic Disc Capacitors
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232264273102
Abstract: No abstract text available
Text: SERIES 642-7 NTC Therm istors for Temperature Measurement and Compensation DESCRIPTION The Series 642-7 NTC Thermistors are mounted in a metric threaded aluminum bolt and are intended for general use. Available in 10% and 5%. ELECTRICAL SPECIFICATIONS Dissipation
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232264262152
Abstract: NTC-1K510%/232264262152
Text: SERIES 6 4 2 -6 NTC Thermistors for Temperature Measurement and Compensation DESCRIPTION The Series 642-6 NTC Thermistors are radial leaded, color coded devices intended for general use. Available in 10% and 5%. ELECTRICAL SPECIFICATIONS D issip atio n . 500 mW maximum
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philips NTC 2322 640 66103
Abstract: philips NTC 2322 640 63153 ntc 2322 642 6
Text: NTC Thermistors For Temperature Sensing i 1 640 S e rie s 2 3 2 2 . R e s is t a n c e v a lu e a t 2 5 "C 0 . 6406. i 6405. 642 6. | R2, = 2.2k 12 to 470 kQ R ,c = 470 I t to 470 k l 2 R , = 2.7 kQ . 4.7 kQ . 10 kQ , 47 k it . 100 kQ
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to3975
philips NTC 2322 640 66103
philips NTC 2322 640 63153
ntc 2322 642 6
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PHILIPS ntc 2322 645
Abstract: PHILIPS ntc 2322 642 philips 2322 ntc PHILIPS ntc 2322 640 Philips 2322 691 90001 ntc 2322 642 6 PHILIPS ntc 2322 640 5 philips NTC thermistors 626 Philips 2322 640 63 philips 2322 642
Text: Philips Components Product specification Varistors, Thermistors and Sensors Selection guide NEGATIVE TEMPERATURE COEFFICIENT NTC THERMISTORS PRODUCT FUNCTION Temperature sensing and control RANGE accuracy line special accuracy high temperature sensors PAGE
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Sprague 32D
Abstract: SPRAGUE 622d 5033R C312C 708D1 704C1
Text: COMPETITOR CROSS REFERENCE I " P IN U P S P H ILIP S P H ILIP S C O M P E T IT O R C O M P E T IT O R C O M P O N EN T S PAGE C O M P E T IT O R C O M P E T IT O R C O M P O N EN T S
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-C440
-22G0
708D1
ERZ-C05DK47Q.
S05K30L
Sprague 32D
SPRAGUE 622d
5033R
C312C
708D1
704C1
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UHF amplifier module
Abstract: BGY916 UHF AMPLIFIER MSA447 2 TMT 15-4
Text: Philips Semiconductors Preliminary specification UH F amplifier module BG Y916 APPLICATION PINNING • Base station transmitting equipment operating in the 920 to 960 MHz frequency band. PIN DESCRIPTION The BGY916 is a three-stage UHF amplifier module in a
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BGY916
BGY916
OT365
MSA447
OT365A.
711DfiSb
7110fiHb
UHF amplifier module
UHF AMPLIFIER
MSA447
2 TMT 15-4
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Untitled
Abstract: No abstract text available
Text: i N AMER PHILIPS/DISCRETE T> i bbSBTBl DDBfiDlB 21b MPSA55 MPSA56 7 v APX SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA MPSA55 MPSA56 Collector-emitter voltage
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MPSA55
MPSA56
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b bS3 T3 i ooa^abs oaa APX Objective specification UHF power transistor BLV946 AMER PHILIPS/DISCRETE b'lE » QUICK REFERENCE DATA FEATURES • Double internal input matching for easy matching and high gain • Poly-silicon emitter ballasting
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BLV946
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PCFB
Abstract: No abstract text available
Text: Philips Sem iconductors Preliminary specification 8-bit microcontroller PCF84C12A/22A/42A FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK IC14 OR DATA SHEET FEATURES • 8-bit CPU, ROM, RAM, I/O in a single 20-lead package • 1k ROM bytes PCF84C12A
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PCF84C12A/22A/42A
20-lead
PCF84C12A)
PCF84C22A)
PCF84C42A)
MAB8048)
PCF84C12A
PCFB
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sot273
Abstract: TRANSISTOR 642 BLV946 Transistor with common base
Text: Philips Semiconductors bbüB^Bl OGETEbB DÛE HIAPX Objective specification BLV946 UHF power transistor •N AMER PHILIPS/DISCRETE b'iE D QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. FEATURES • Double internal input matching
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BLV946
OT273
OT273
sot273
TRANSISTOR 642
BLV946
Transistor with common base
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BFQ32M
Abstract: of bfq63 BFQ63 transistor 643
Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERN A T I O N A L DESCRIPTION BFQ63 SbE D • 711Gô2b G04S4Ô4 SDD ■ PHIN PINNING NPN transistor in a 10-12 metal envelope with insulated electrodes and a shield lead connected to the
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BFQ63
711002b
BFQ32M.
7110fl2b
0D454fl7
BFQ32M
of bfq63
BFQ63
transistor 643
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TEA1041T
Abstract: No abstract text available
Text: Philips Sem iconductors Preliminary specification Battery low-level indicator TEA1041T FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK IC11 OR DATA SHEET FEATURES • • Optical signal following battery low-level detection QUICK REFERENCE DATA UNIT
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TEA1041T
TEA1041T
MEA233
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Untitled
Abstract: No abstract text available
Text: H Philips S em iconductors lati53T31 00315T5 TQS H A P X ^Productspecification NPN 5 GHz wideband transistor BFQ63 N AUER PHIL IPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
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lati53T31
00315T5
BFQ63
BFQ32M.
MEA302
MBB773
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BFQ63
Abstract: BFQ32M of bfq63
Text: Philips Semiconductors bibi.53,:] 3 1 G G B IS T S TGS HAPX Product specification NPN 5 GHz wideband transistor BFQ63 N AMER PHILIPS/DISCRETE DESCRIPTION b'IE D PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the
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bbS3T31
BFQ63
BFQ32M.
D0315T8
BFQ63
ls12l2
BFQ32M
of bfq63
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"Programmable Unijunction Transistor"
Abstract: Programmable Unijunction Transistor BRY56 unijunction transistor 642 philips MBB696
Text: Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION BRY56 PINNING Planar PNPN trigger device in a TO-92; SOT54 plastic package. APPLICATIONS PIN DESCRIPTION 1 gate 2 anode 3 cathode • Switching applications such as:
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BRY56
MBB697
MBB696
MB8698
"Programmable Unijunction Transistor"
Programmable Unijunction Transistor
BRY56
unijunction transistor
642 philips
MBB696
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AN11
Abstract: No abstract text available
Text: Philips Components-Signetics Application Note Data of Issue November 1986 Rev. Date AN11 PLD programmable retriggerable one-shot Programmable Logic Devices Author: David Wong FEATURES • Programmable pulse-width/delay • Maximum 256 dock cycles • Asynchronous TRIGGER input
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PLS159A
AN11
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Untitled
Abstract: No abstract text available
Text: BYX56 SERIES M A INTENANCE TYPE - PHILIPS INTERNATIONAL SbE D • 711Dû2t. □ □41t.4b STT ■ PHIN T z p r-n CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO—5 metal envelope, capable of absorbing transients and intended fo r power rectifier applications.
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BYX56
BYX56â
1400R.
711002b
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ403AX
100-PD/PD
200nH
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Byx56 1500
Abstract: BYX56-1400R BYX56-600 BYX56 BYX56/600 BYX56-1400 BYX56-600R IEC134 T0119
Text: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE BSE D ^53=131 Q0S5Ô41 5 B BYX56 SERIES 7 ^ 0 1 -1 9 CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO— 5 metal envelope, capable of absorbing transients and intended fo r power rectifier applications.
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BYX56
BYX56-600
BYX56-1400.
BYX56-600R
BYX56-1400R.
BYX56-
Byx56 1500
BYX56-1400R
BYX56/600
BYX56-1400
IEC134
T0119
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BYX56-600
Abstract: Byx56 1500 t0711 BYX56-600R BYX56 BYX56-1400 BYX56-1400R IEC134 BYX56/BYX56-600R
Text: BYX56 SERIES M AIN TEN AN C E TYPE SbE D - PHILIPS INTERNATIONAL • 7110A2b 0041b4b STT ■ PHIN T -0 7 -1 CONTROLLED AVALANCHE RECTIFIER DIODES Silicon diodes in a DO— 5 metal envelope, capable of absorbing transients and intended for power rectifier applications.
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BYX56
711002b
0041b4b
T-07-
BYX56-600
BYX56-1400.
BYX56-600R
BYX56-1400R.
BYX56-
-600IR)
Byx56 1500
t0711
BYX56-1400
BYX56-1400R
IEC134
BYX56/BYX56-600R
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18VTHD
Abstract: ECG1278
Text: PHILIPS E C G INC ECG 17E Q ECG1278 5.8 W Audio Power Amplifier ECG1278 Is a silicon monolithic Integrated cir cuit designed as an audio power amplifier. It is Ideally suited for applications in automotive radio or stereo designs. It has 5.8 W output power when operating at a supply voltage of
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ECG1278
ECG1278
T-74-05-01
80cm2
18VTHD
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