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    Panasonic Electronic Components ERJ-6ENF4640V

    RES SMD 464 OHM 1% 1/8W 0805
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    DigiKey ERJ-6ENF4640V Cut Tape 104,041 1
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    ERJ-6ENF4640V Digi-Reel 104,041 1
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    ERJ-6ENF4640V Reel 100,000 5,000
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    Mouser Electronics ERJ-6ENF4640V 76,792
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    Bristol Electronics ERJ-6ENF4640V 5,000
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    Component Electronics, Inc ERJ-6ENF4640V 14,975
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    Panasonic Electronic Components ERJ-3EKF4640V

    RES SMD 464 OHM 1% 1/10W 0603
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    DigiKey ERJ-3EKF4640V Cut Tape 84,603 1
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    ERJ-3EKF4640V Digi-Reel 84,603 1
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    • 1000 $0.01014
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    ERJ-3EKF4640V Reel 80,000 5,000
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    Mouser Electronics ERJ-3EKF4640V 81,347
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    Bristol Electronics ERJ-3EKF4640V 9,959
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    TTI ERJ-3EKF4640V Reel 50,000
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    Chip 1 Exchange ERJ-3EKF4640V 9,364
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    IBS Electronics ERJ-3EKF4640V 50,000
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    Panasonic Electronic Components ERA-3AEB4640V

    RES SMD 464 OHM 0.1% 1/10W 0603
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    DigiKey ERA-3AEB4640V Reel 10,000 5,000
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    Mouser Electronics ERA-3AEB4640V 7,077
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    TTI ERA-3AEB4640V Reel 10,000 5,000
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    Microchip Technology Inc TC1016-4.0VCTTR

    IC REG LINEAR 4V 80MA SOT23-5
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    DigiKey TC1016-4.0VCTTR Cut Tape 8,518 1
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    TC1016-4.0VCTTR Digi-Reel 8,518 1
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    TC1016-4.0VCTTR Reel 6,000 3,000
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    Avnet Americas TC1016-4.0VCTTR Reel 52 Weeks 3,000
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    RS TC1016-4.0VCTTR Bulk 10 Weeks 3,000
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    Microchip Technology Inc TC1016-4.0VCTTR Reel 24,000 107 Weeks
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    NAC TC1016-4.0VCTTR 3,000
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    Avnet Silica TC1016-4.0VCTTR 38 Weeks 3,000
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    EBV Elektronik TC1016-4.0VCTTR 53 Weeks 3,000
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    Panasonic Electronic Components ERA-8AEB4640V

    RES SMD 464 OHM 0.1% 1/4W 1206
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    DigiKey ERA-8AEB4640V Reel 5,000 5,000
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    Mouser Electronics ERA-8AEB4640V 3,002
    • 1 $0.25
    • 10 $0.211
    • 100 $0.175
    • 1000 $0.133
    • 10000 $0.126
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    Newark ERA-8AEB4640V Cut Tape 5,000
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    ERA-8AEB4640V Reel 5,000
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    Master Electronics ERA-8AEB4640V
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    640V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ixys dsei 2x30-04c

    Abstract: No abstract text available
    Text: DSEI 2X30-04C/06C DSEI 2X31-04C/06C DIXYS Diode 2X30-04C/06C 2X31-04C/06C FRED V RSM V rrm 440V 640V 400V 600V Symbol Type DSEI 2x 30/31 -04C DSEI 2x 30/31 -06C o -l- I f DSEI2x30 Test Conditions T VJ I "^"v j M A A TVJ = 150°C t = 10 mS (50 Hz), sine t = 8.3 ms (60 Hz), sine


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    2X30-04C/06C 2X31-04C/06C DSEI2x30 00D343R D-68623 ixys dsei 2x30-04c PDF

    Untitled

    Abstract: No abstract text available
    Text: High Current DC Single Line Feed-thru Series Features • ■ ■ ■ Single Line Filters ■ ■ ■ ■ ■ Agency Approval Voltage: 130VDC/130VAC 50/60Hz Filter Rated Voltage: 640VDC/250VAC 50/60/400Hz C Configuration with Class Y4 capacitors Current rating up to 300 Amps


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    130VDC/130VAC 50/60Hz 640VDC/250VAC 50/60/400Hz PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS MEA/ MEE / MEK 250-12DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module TYPE: MEA250-12DA 1 640V 600V Symbol FRMS I <x> Ji2dt 2 MEE250-12DA 3 2 3 1 2 4—4 - 4 , 4 -4 -4 , I 1 l< I »I I i I I M 1 >1 I I I 1 H 1 l< I I 367 260 1480 A


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    250-12DA MEA250-12DA MEE250-12DA 250-012DA D-68623 PDF

    2SK1602

    Abstract: No abstract text available
    Text: 2SK1602 2SK1602 o X -í 7 Í > 'T'ffl M 'Æ , ^ > Ì£ ÌJ t^ fiv > 0 : R d S(O N )=4.3 îî F5 : iYfsl = 1 . 7 S ( í ^ ) . M fifö fö iS r . ü tiÄ ^ 'fiU 'o : ID s s = 1 0 0 M ( S ^ ) (Vd S = 640V) • X . 'y > W 7 , > I > V ? 4 - ? - Ç - ï 0 : Vth = 1.5~3.5v(VDS = 10V, lD = lm A )


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    SC-67 10//s VDD-400V, 00A/JKS 2SK1602 PDF

    ss100 transistor

    Abstract: 2SK2605
    Text: T O S H IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Soree ON Resistance : Typ. High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : I d SS“ 100/^A (Max.) (Vj)g = 640V)


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    2SK2605 SS-100/ ss100 transistor 2SK2605 PDF

    JIS for humidity test for touch screen

    Abstract: sharp lcd panel pin LCP-06008A-1 BUSBAR size
    Text: Technical Document LCD Specification LCD Group LS037V7DW01 LCD Module Product Specification March 2008 Transflective LCD module with touch panel. Resolution is selectable between VGA 480H x 640V or QVGA (240H × 320V). Color mode is selectable between 262,144


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    LS037V7DW01 18-bit LCP-06008A-1 LCP-06008A JIS for humidity test for touch screen sharp lcd panel pin LCP-06008A-1 BUSBAR size PDF

    Untitled

    Abstract: No abstract text available
    Text: High Current DC Single Line Pi Series Features • ■ ■ Single Line Filters ■ ■ ■ ■ Agency Approval Voltage: 130VDC/130VAC 50/60Hz Filter Rated Voltage: 640VDC/250VAC 50/60/400Hz Pi Configuration with Class Y4 capacitors Current rating up to 200 Amps


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    130VDC/130VAC 50/60Hz 640VDC/250VAC 50/60/400Hz PDF

    2SK2607

    Abstract: SC-65
    Text: *>'J * * . / U M O S f i2 7 r - M O S I I I 2SK2607 <KKW07) m O DC-OCH > / < - ? . i - 5 > K 9«f 7 # is X « Iftfï : mm li tMAX 01 J t 0.2 • JR o t a v i « » ! * * . i > Kd s (O n ) = i o n ( « i » |Yfc| = 7.0S(*#t*) I d SS = 100//A <*^> (VDS=640V)


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    2SK2607 SC-65 2-16C1B 2SK2607 SC-65 PDF

    2SK2038

    Abstract: Transistor TOSHIBA 2SK
    Text: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)


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    2SK2038 DRAI11 2SK2038 Transistor TOSHIBA 2SK PDF

    fqt1n80

    Abstract: No abstract text available
    Text: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    FQT1N80TF fqt1n80 PDF

    Untitled

    Abstract: No abstract text available
    Text: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


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    R8005ANX O-220FM R1102A PDF

    THHN WIRE 12 AWG

    Abstract: 820V 65kA TB1-65220-1G-40 AWG THHN TB1 225 sanden automatic voltage regulators Lg "Noise Filter"
    Text: TB1 Series-Transient Voltage Surge Suppressors Series-connected Design Terminal Board/Series-connected Suppression Filter System The TB1 Series STABILINE Transient Voltage Surge Suppressor is engineered for hard-wired installation within or adjacent to electrical loads such as programmable logic controllers,


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    1449-Recognized F7019 THHN WIRE 12 AWG 820V 65kA TB1-65220-1G-40 AWG THHN TB1 225 sanden automatic voltage regulators Lg "Noise Filter" PDF

    20015WR-05A00

    Abstract: LX1691B LXMG1617A-12-61 LXMG1617A-12-62 SM02
    Text: PanelMatch TM LXMG1617A-12-6x 12V 6W CCFL Programmable Inverter Module P RODUCTION D ATASHEET KEY FEATURES DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ƒ Externally Programmable Maximum Output Current


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    LXMG1617A-12-6x UL60950 E175910 20015WR-05A00 LX1691B LXMG1617A-12-61 LXMG1617A-12-62 SM02 PDF

    "Direct Replacement" microsemi

    Abstract: LX1691B LXMG1618A-05-61 LXMG1618A-05-62 SM02 10K POTENTIOMETER 100mm
    Text: PanelMatch "A Series" TM LXMG1618A-05-6x 5V 6W CCFL Programmable Inverter Module P RODUCTION D ATASHEET DESCRIPTION from the system battery, or AC adapter directly to high frequency, high-voltage waveform required to ignite and operate CCFL lamps. A 12V input inverter is also


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    LXMG1618A-05-6x LXMG1618A-12-6x) LXMG1618A LX1691B "Direct Replacement" microsemi LX1691B LXMG1618A-05-61 LXMG1618A-05-62 SM02 10K POTENTIOMETER 100mm PDF

    APT8014L2FLL

    Abstract: MAX7238
    Text: APT8014L2FLL 800V 52A 0.140Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    APT8014L2FLL O-264 O-264 APT8014L2FLL MAX7238 PDF

    8114

    Abstract: APT12M80B APT12M80S MIC4452
    Text: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


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    APT12M80B APT12M80S 8114 APT12M80B APT12M80S MIC4452 PDF

    APT15F50K

    Abstract: MIC4452 half bridge converter
    Text: APT15F50K 500V, 15A, 0.39Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


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    APT15F50K 190ns O-220 APT15F50K MIC4452 half bridge converter PDF

    APT8024B2VFR

    Abstract: APT8024B2VR APT8024LVR
    Text: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 APT8024B2VR APT8024LVR PDF

    APT22F80B

    Abstract: APT22F80S MIC4452 two switch forward converter
    Text: APT22F80B APT22F80S 800V, 23A, 0.43Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


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    APT22F80B APT22F80S 260ns APT22F80B APT22F80S MIC4452 two switch forward converter PDF

    itw cs4

    Abstract: 2SC947F 47-400-0 itw 405 k ITW Switches 204D itw paktron
    Text: Capacitor Types • Surface mount capability • Ideal for high frequency switching power supplies and DC to DC converters • Low ESR/ESL • High ripple current/ High capacitance • Operating temperature range: –55°C to 125°C • Volumetrically efficient


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    100KHz 10MHz 10KHz 100Hz itw cs4 2SC947F 47-400-0 itw 405 k ITW Switches 204D itw paktron PDF

    APT8043BLL

    Abstract: APT8043SLL
    Text: APT8043BLL APT8043SLL 800V POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    APT8043BLL APT8043SLL O-247 O-247 unles84 APT8043BLL APT8043SLL PDF

    7106

    Abstract: data sheet IC 7106 IL 7106 APT8014JFLL
    Text: APT8014JFLL 800V 42A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    APT8014JFLL OT-227 7106 data sheet IC 7106 IL 7106 APT8014JFLL PDF

    APT8024JFLL

    Abstract: No abstract text available
    Text: APT8024JFLL 800V 29A 0.240Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    APT8024JFLL OT-227 APT8024JFLL PDF

    CoolMOS Power Transistor

    Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
    Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    ISOPLUS220TM 25N80C E153432 065B1 728B1 123B1 CoolMOS Power Transistor POWER MOSFET 4600 UPS SIEMENS 25N80C PDF