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    GaN amplifier

    Abstract: GaN Bias 25 watt Gan on silicon transistor rf microwave amplifier with S Parameters rf power amplifier transistor with s-parameters rf power amplifier with s parameters S-10 S-14 high power fet amplifier schematic power amplifier mmic design high efficiency
    Text: 11/02/01 LB Generic 2.5-W 60% Bandwidth C-Band MMIC Amplifier Inder J. Bahl Abstract This paper reports the design and test data of a generic 2.5-W two-stage C-band MMIC power amplifier developed using the MSAG MESFET process. We measured typically a minimum PAE of 45% and 2.5W CW output power over


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    ITT6401FM

    Abstract: No abstract text available
    Text: 2W GaAs Power Amplifier 4.5 - 7.1 GHz 6401FM FEATURES • • • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 Ω Input/Output Impedance


    Original     		PDF ITT6401FM 6401FM ITT6401FM 360mA