g30n60c3
Abstract: TA49051 igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 740 MOSFET TRANSISTOR g30n60
Text: HGTG30N60C3 S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT January 1997 Features • • • • • Package 63A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating
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HGTG30N60C3
230ns
150oC
O-247
HGTG30N60C3
150oC.
g30n60c3
TA49051
igbt g30n60c3
LD26
RHRP3060
740 MOSFET TRANSISTOR
g30n60
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c60hc
Abstract: EN60898 C60HD type d 20 circuit-breaker C60H MINIATURE CIRCUIT BREAKER Breaking capacity C60H dc Circuit Breakers to BS EN 60898 C60H c60h 2p C60HD
Text: C60H Miniature circuit breakers Ratings 1 to 63A, breaking capacity 15kA Installation • ■ ■ Symmetrical DIN rail. Direct panel mounting. Isobar 4 pan assemblies. Technical data ■ ■ ■ 1, 2, 3 and 4 pole Type B Miniature circuit breakers Current ratings: 1 to 63A at 300C to BS EN60898.
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EN60898.
-300C
BS7671.
C60HC
c60hc
EN60898
C60HD type d 20
circuit-breaker C60H
MINIATURE CIRCUIT BREAKER Breaking capacity
C60H dc
Circuit Breakers to BS EN 60898
C60H
c60h 2p
C60HD
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No 42 G30N60C3D
Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C
Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss
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HGTG30N60C3D
230ns
150oC
O-247
HGTG30N60C3D
150oC.
TA49051.
1-800-4-HARRIS
No 42 G30N60C3D
g30n60c3d
LD26
RHRP3060
TA49051
TA49053
g30n60
G30N60C
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g30n60c3d
Abstract: G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 HGTG30N60C3D N-channel enhancement 200V 60A
Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features • • • • • Package o 63A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating
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HGTG30N60C3D
230ns
150oC
O-247
HGTG30N60C3D
150oC.
1-800-4-HARRIS
g30n60c3d
G30N60
transistor 40411
40411 transistor
TA49051
TA49014
No 42 G30N60C3D
TA49053
N-channel enhancement 200V 60A
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G30N60
Abstract: G30N60C3 G30N60C3S HGTG SC-15 HGT4E30N60C3S HGTG30N60C3 LD26 RHRP3060 TA49051
Text: HGTG30N60C3, HGT4E30N60C3S Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 and HGT4E30N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTG30N60C3,
HGT4E30N60C3S
HGTG30N60C3
HGT4E30N60C3S
150oC.
G30N60
G30N60C3
G30N60C3S
HGTG
SC-15
LD26
RHRP3060
TA49051
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Circuit Breakers to BS EN 60898
Abstract: 2 pole mcb C60HD vigi C60 1 pole C60H RCBO C60HC mcb C60HB 3 pole vigi vigi C60H 3p 63a
Text: C60H Miniature circuit breakers Ratings 1 to 63A C60HB type B 3 - 5In Applications Protection and control of circuits against overloads and short circuits. • In applications with general load characteristics. ■ Tripping characteristics: BS EN 60898 type B:
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C60HB
C60HC
110/240V,
50/60Hz,
240/415V,
50/60Hz.
25mm2,
35mm2.
Circuit Breakers to BS EN 60898
2 pole mcb
C60HD
vigi C60
1 pole C60H RCBO
mcb C60HB
3 pole vigi
vigi
C60H 3p 63a
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HGTG30N60C3D
Abstract: IGBTs g30n60c3d No 42 G30N60C3D TA49051 TA49053 LD26 RHRP3060
Text: HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
IGBTs
g30n60c3d
No 42 G30N60C3D
TA49051
TA49053
LD26
RHRP3060
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Transient Voltage Suppressors 340 V
Abstract: 170VDC
Text: MFV- - - MUTIL-FUNCTION VARISTORS C SERIES RATINGS z Maximum allowable Voltage : 130Vac to 420Vac or 170Vdc to 560 Vdc z Rating current: 63A z Imax.: 50kA 8/20µs Peak Surge Current z Clamping Voltage : max. 1120V z Operating Temperature: -45°C to 85°C
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130Vac
420Vac
170Vdc
MFVC201
MFVC221
MFVC391
MFVC431
MFVC471
MFVC511
MFVC621
Transient Voltage Suppressors 340 V
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Merlin Gerin c60hd
Abstract: Circuit Breakers to BS EN 60898 Merlin Gerin c60hb Merlin Gerin CIRCUIT BREAKER merlin gerin C60H merlin gerin C60H characteristics c60hc C60H dc 4P 63A MERLIN C60H 3p 63a
Text: C60H Isobar 4 outgoers miniature circuit breakers 1 - 63A Installation • ■ ■ ■ In Merlin Gerin Isobar 4 distribution boards Symmetrical DIN rail Direct panel mounting Isobar 4 pan assemblies Technical data ■ 1, 2, 3 and 4 pole Type B Miniature circuit breakers
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440Vac
-300C
Dime24880
C60HD
C60HD
Merlin Gerin c60hd
Circuit Breakers to BS EN 60898
Merlin Gerin c60hb
Merlin Gerin CIRCUIT BREAKER
merlin gerin C60H
merlin gerin C60H characteristics
c60hc
C60H dc
4P 63A MERLIN
C60H 3p 63a
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g30n60c3d
Abstract: TA49051 G30N60 HGTG30N60C3D 63a 216 LD26 RHRP3060 TA49053
Text: HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
g30n60c3d
TA49051
G30N60
63a 216
LD26
RHRP3060
TA49053
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g30n60c3d
Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
g30n60c3d
G30N60
TA49053
TA49051
LD26
RHRP3060
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g30n60
Abstract: g30n60c3d RHRP3060 TA49051 TA49053 HGTG30N60C3D
Text: HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
g30n60
g30n60c3d
RHRP3060
TA49051
TA49053
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TA49053
Abstract: g30n60c3d
Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
TA49053
g30n60c3d
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2xM20
Abstract: 2CMA178728R1000
Text: Surface socket-outlet IP67 Enclosure : Thermoplastic Cable entry for 16A knock-outs on top 2xM25,from bottom 2xM20 Cable entry for 32A knock-outs on top 2xM20,from bottom 2xM25 Cable area for 16A : 1.5 - 4.0 mm2 Cable area for 32A : 2.5 - 10 mm2 Cable area for 63A : 6.0 - 25 mm2
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2xM25
2xM20
2xM20
2xM25
2CMA178728R1000
2CMA178727R1000
2CMA178731R1000
2CMA178740R1000
2CMA178728R1000
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G30N60C3
Abstract: igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 TA49051
Text: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60C3
HGTG30N60C3
150oC.
230ns
150oC
G30N60C3
igbt g30n60c3
LD26
RHRP3060
TA49051
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g30n60c3
Abstract: TA49051 HGTG30N60C3 LD26 RHRP3060 g30n60
Text: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60C3
HGTG30N60C3
150oC.
230ns
150oC
g30n60c3
TA49051
LD26
RHRP3060
g30n60
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ST3PA
Abstract: st3pa-d HH52P LW5-16 K15555 AC33A IEC60947-6-1 LA38-11 ST3P three phase automatic changeover switch
Text: Load-isolation Switch 1- Switch Disconnectors GL series load-isolation switch http://www.greegoo.com 1 GL-63A GL-100A GL-160A/3 GL-160A/4 GL-250A/3 GL-250A/4 GL-400A/3 GL-400A/4 GL-630A/3 GL-630A/4 GL-1000A/3 GL-1250A/3 GL-1250A/4 GL-1600A/3 GL-2500A/3 Greegoo Electric 7.2007
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GL-100A
GL-160A/3
GL-160A/4
GL-250A/3
GL-250A/4
GL-400A/3
GL-400A/4
GL-630A/3
GL-630A/4
GL-1000A/3
ST3PA
st3pa-d
HH52P
LW5-16
K15555
AC33A
IEC60947-6-1
LA38-11
ST3P
three phase automatic changeover switch
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RCCB 300MA
Abstract: 480B rccb SS97 216B ELCB 263-B 240b Ce 263b
Text: 2 and 4 pole residual current devices RCCBs/ELCBs Description to open a circuit automatically in the case of an earth leakage fault between phase and earth and / or neutral greater or equal to 10, 30, 100, 300 or 500mA; use in domestic, commercial and industrial installations.
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500mA;
110/230V
50/60Hz
230/400V
0-100A
500mA
100mA
RCCB 300MA
480B
rccb
SS97
216B
ELCB
263-B
240b
Ce 263b
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IC60N
Abstract: IC60N C CURVE A9A26948 A9C30811 NG125L vigi C60 C60H VIGI IC60N c 6a TM 18311 DB4050
Text: Applications Guide 1 Acti 9 Protection for specialised applications Acti 9 is Schneider Electric’s new core modular system In addition, we offer back-up tables providing quick, that makes your power distribution installation safer, at-a-glance overview of everything you need to know
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202L5020
A9S60120
202L5532
A9S60432
202L5563
A9S60463
SE1042DK
IC60N
IC60N C CURVE
A9A26948
A9C30811
NG125L
vigi C60
C60H VIGI
IC60N c 6a
TM 18311
DB4050
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ELCB wiring diagram
Abstract: IEC-947-2 IEC-898 EARTH LEAKAGE RELAY elcb 100mA 63A tripping curve of elcb bs 1361 ELCB CONNECTION DIAGRAM My 350 BS6651
Text: Circuit protection devices MCBs, RCCBs, RCBO, ELR, surge arresters, fuse carriers, complete range of auxiliaries, busbars and connectors EA 2002/1 Welcome to the new edition of our general catalogue For easy reference purposes, Hager general catalogue is divided into three separate catalogues each representing
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U8/84
ELCB wiring diagram
IEC-947-2
IEC-898
EARTH LEAKAGE RELAY
elcb 100mA 63A
tripping curve of elcb
bs 1361
ELCB CONNECTION DIAGRAM
My 350
BS6651
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100-A38
Abstract: 100ADT6 100ADT6S 160ADT6 160ADT6S 200ADT6 200ADT6S 63ADT6 63ADT6S 63A45
Text: ADT Series High Performance Filters for High Current Three Phase Applications ADT6 / ADT6S UL Recognized† ADT Series Specifications Designed with very high insertion loss for Delta applications, these three phase filters work well in industrial applications to bring high current motor drives
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63ADT6S
100ADT6
100ADT6S
160/200ADT6
160/200ADT6S
63ADT6
160ADT6
200ADT6
100-A38
100ADT6
100ADT6S
160ADT6
160ADT6S
200ADT6
200ADT6S
63ADT6
63ADT6S
63A45
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merlin gerin multi 9 ihp 1c manual
Abstract: NS800N telemecanique contactor catalogue schneider NS1250N merlin gerin multi 9 ihp 1c Merlin Gerin NS1250N merlin gerin multi 9 ihp 1c program timer NS1250n 29450 SCHNEIDER schneider pm710
Text: Ready to install Distribution boards, DIN rail mounted equipment, enclosures and connection systems Contents Isobar 4 distribution boards and protective devices Section one 7 Modular control products Section two 31 Unit mounted residual current devices Section three
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16kA11000
MGLV5750
merlin gerin multi 9 ihp 1c manual
NS800N
telemecanique contactor catalogue
schneider NS1250N
merlin gerin multi 9 ihp 1c
Merlin Gerin NS1250N
merlin gerin multi 9 ihp 1c program timer
NS1250n
29450 SCHNEIDER
schneider pm710
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G30N60
Abstract: g30n60c3 TA49051 igbt g30n60c3 C110 HGTG30N60C3 LD26 U5025 40422
Text: HGTG30N60C3 in t e r r ii J a n u a ry . D ata S h eet m i 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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HGTG30N60C3
HGTG30N60C3
TA49051.
O-247
G30N60
g30n60c3
TA49051
igbt g30n60c3
C110
LD26
U5025
40422
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g30n60c3d
Abstract: G30N60 TA49014 TA49051 G30N60C TA49053 ic lg 631 LG 631 C110 HGTG30N60C3D
Text: in t e HGTG30N60C3D r r ii J a n u a ry . m D ata S h eet 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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OCR Scan
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PDF
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HGTG30N60C3D
HGTG30N60C3D
TA49051.
TA49053.
TA49014.
g30n60c3d
G30N60
TA49014
TA49051
G30N60C
TA49053
ic lg 631
LG 631
C110
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